JP7508071B2 - 基板のパターン化処理 - Google Patents

基板のパターン化処理 Download PDF

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Publication number
JP7508071B2
JP7508071B2 JP2022513260A JP2022513260A JP7508071B2 JP 7508071 B2 JP7508071 B2 JP 7508071B2 JP 2022513260 A JP2022513260 A JP 2022513260A JP 2022513260 A JP2022513260 A JP 2022513260A JP 7508071 B2 JP7508071 B2 JP 7508071B2
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Prior art keywords
photoresist
layer
substrate
sidewall
forming
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Japanese (ja)
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JP2022549067A5 (https=
JP2022549067A (ja
Inventor
グルゼスコウィアク，ジョディ
シェピス，アンソニー
ジェイ． デヴィリアーズ，アントン
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/696—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP2022513260A 2019-09-25 2020-09-25 基板のパターン化処理 Active JP7508071B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962905604P 2019-09-25 2019-09-25
US62/905,604 2019-09-25
PCT/US2020/052771 WO2021062188A1 (en) 2019-09-25 2020-09-25 Patterning a substrate

Publications (3)

Publication Number Publication Date
JP2022549067A JP2022549067A (ja) 2022-11-24
JP2022549067A5 JP2022549067A5 (https=) 2023-09-14
JP7508071B2 true JP7508071B2 (ja) 2024-07-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022513260A Active JP7508071B2 (ja) 2019-09-25 2020-09-25 基板のパターン化処理

Country Status (6)

Country Link
US (2) US11782346B2 (https=)
JP (1) JP7508071B2 (https=)
KR (1) KR102868381B1 (https=)
CN (1) CN114424321B (https=)
TW (1) TWI837423B (https=)
WO (1) WO2021062188A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7516200B2 (ja) * 2020-10-09 2024-07-16 株式会社東芝 エッチング方法、半導体チップの製造方法及び物品の製造方法
WO2023028243A1 (en) * 2021-08-25 2023-03-02 Geminatio, Inc. Narrow line cut masking process

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140352A (ja) 2001-11-05 2003-05-14 Toshiba Corp 反射防止膜、これを用いたレジストパターン形成方法および半導体装置の製造方法
JP2010287890A (ja) 2009-06-09 2010-12-24 Asml Netherlands Bv リソグラフィ方法及びリソグラフィ装置
JP2014534641A (ja) 2011-11-04 2014-12-18 東京エレクトロン株式会社 スパイクアニールプロセスを制御する方法及びシステム
JP2015069173A (ja) 2013-09-30 2015-04-13 富士フイルム株式会社 パターン形成方法、パターンマスクの形成方法、電子デバイスの製造方法及び電子デバイス
JP2017507372A (ja) 2014-02-25 2017-03-16 東京エレクトロン株式会社 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術
US20170358450A1 (en) 2016-06-08 2017-12-14 Tokyo Electron Limited Organic Mandrel Protection Process
US20190237330A1 (en) 2018-01-26 2019-08-01 Lam Research Corporation Spacer profile control using atomic layer deposition in a multiple patterning process

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JPH04338959A (ja) * 1991-05-01 1992-11-26 Dainippon Printing Co Ltd パターンの形成方法
JPH0982596A (ja) * 1995-09-12 1997-03-28 Toshiba Corp パターン形成方法
JPH09258451A (ja) * 1996-03-18 1997-10-03 Toshiba Corp 感光性樹脂膜パターンの形成方法及び半導体装置の製造方法
JP2004093652A (ja) * 2002-08-29 2004-03-25 Seiko Epson Corp レジストパターンの形成方法および半導体装置の製造方法
JP4246578B2 (ja) * 2003-09-05 2009-04-02 ヤマハ株式会社 微小構造体の製法
JP3857692B2 (ja) * 2004-01-15 2006-12-13 株式会社東芝 パターン形成方法
KR101310911B1 (ko) * 2006-06-08 2013-09-25 엘지디스플레이 주식회사 평판 표시장치용 폴리실리콘 박막 트랜지스터 기판의제조방법
US8852851B2 (en) * 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
KR100983724B1 (ko) * 2007-12-20 2010-09-24 주식회사 하이닉스반도체 반도체 소자의 형성 방법
JP2010283095A (ja) * 2009-06-04 2010-12-16 Hitachi Ltd 半導体装置の製造方法
US20110294075A1 (en) * 2010-05-25 2011-12-01 United Microelectronics Corp. Patterning method
KR20120063390A (ko) * 2010-12-07 2012-06-15 에스케이하이닉스 주식회사 반도체 소자의 제조 방법
US8901016B2 (en) * 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
KR101434660B1 (ko) * 2012-12-18 2014-08-28 금호석유화학 주식회사 신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물
KR20160144146A (ko) * 2015-06-08 2016-12-16 삼성전자주식회사 반도체 장치의 패턴 형성 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140352A (ja) 2001-11-05 2003-05-14 Toshiba Corp 反射防止膜、これを用いたレジストパターン形成方法および半導体装置の製造方法
JP2010287890A (ja) 2009-06-09 2010-12-24 Asml Netherlands Bv リソグラフィ方法及びリソグラフィ装置
JP2014534641A (ja) 2011-11-04 2014-12-18 東京エレクトロン株式会社 スパイクアニールプロセスを制御する方法及びシステム
JP2015069173A (ja) 2013-09-30 2015-04-13 富士フイルム株式会社 パターン形成方法、パターンマスクの形成方法、電子デバイスの製造方法及び電子デバイス
JP2017507372A (ja) 2014-02-25 2017-03-16 東京エレクトロン株式会社 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術
US20170358450A1 (en) 2016-06-08 2017-12-14 Tokyo Electron Limited Organic Mandrel Protection Process
US20190237330A1 (en) 2018-01-26 2019-08-01 Lam Research Corporation Spacer profile control using atomic layer deposition in a multiple patterning process

Also Published As

Publication number Publication date
US20210088907A1 (en) 2021-03-25
TWI837423B (zh) 2024-04-01
CN114424321B (zh) 2026-03-20
KR102868381B1 (ko) 2025-10-02
KR20220066898A (ko) 2022-05-24
WO2021062188A1 (en) 2021-04-01
JP2022549067A (ja) 2022-11-24
US20230367217A1 (en) 2023-11-16
TW202127515A (zh) 2021-07-16
CN114424321A (zh) 2022-04-29
US11782346B2 (en) 2023-10-10
US12099299B2 (en) 2024-09-24

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