KR102868381B1 - 기판 패터닝 - Google Patents

기판 패터닝

Info

Publication number
KR102868381B1
KR102868381B1 KR1020227009827A KR20227009827A KR102868381B1 KR 102868381 B1 KR102868381 B1 KR 102868381B1 KR 1020227009827 A KR1020227009827 A KR 1020227009827A KR 20227009827 A KR20227009827 A KR 20227009827A KR 102868381 B1 KR102868381 B1 KR 102868381B1
Authority
KR
South Korea
Prior art keywords
substrate
photoresist
layer
sidewall
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227009827A
Other languages
English (en)
Korean (ko)
Other versions
KR20220066898A (ko
Inventor
조디 그르제스코위악
앤서니 쉐피스
안톤 제이 데빌리어스
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20220066898A publication Critical patent/KR20220066898A/ko
Application granted granted Critical
Publication of KR102868381B1 publication Critical patent/KR102868381B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H01L21/0337—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H01L21/0276—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/696—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
KR1020227009827A 2019-09-25 2020-09-25 기판 패터닝 Active KR102868381B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962905604P 2019-09-25 2019-09-25
US62/905,604 2019-09-25
PCT/US2020/052771 WO2021062188A1 (en) 2019-09-25 2020-09-25 Patterning a substrate

Publications (2)

Publication Number Publication Date
KR20220066898A KR20220066898A (ko) 2022-05-24
KR102868381B1 true KR102868381B1 (ko) 2025-10-02

Family

ID=74881943

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227009827A Active KR102868381B1 (ko) 2019-09-25 2020-09-25 기판 패터닝

Country Status (6)

Country Link
US (2) US11782346B2 (https=)
JP (1) JP7508071B2 (https=)
KR (1) KR102868381B1 (https=)
CN (1) CN114424321B (https=)
TW (1) TWI837423B (https=)
WO (1) WO2021062188A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7516200B2 (ja) * 2020-10-09 2024-07-16 株式会社東芝 エッチング方法、半導体チップの製造方法及び物品の製造方法
WO2023028243A1 (en) * 2021-08-25 2023-03-02 Geminatio, Inc. Narrow line cut masking process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140352A (ja) * 2001-11-05 2003-05-14 Toshiba Corp 反射防止膜、これを用いたレジストパターン形成方法および半導体装置の製造方法
US20130288487A1 (en) 2011-11-04 2013-10-31 Tokyo Electron Limited Method and system for controlling a spike anneal process
US20190237330A1 (en) * 2018-01-26 2019-08-01 Lam Research Corporation Spacer profile control using atomic layer deposition in a multiple patterning process

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04338959A (ja) * 1991-05-01 1992-11-26 Dainippon Printing Co Ltd パターンの形成方法
JPH0982596A (ja) * 1995-09-12 1997-03-28 Toshiba Corp パターン形成方法
JPH09258451A (ja) * 1996-03-18 1997-10-03 Toshiba Corp 感光性樹脂膜パターンの形成方法及び半導体装置の製造方法
JP2004093652A (ja) * 2002-08-29 2004-03-25 Seiko Epson Corp レジストパターンの形成方法および半導体装置の製造方法
JP4246578B2 (ja) * 2003-09-05 2009-04-02 ヤマハ株式会社 微小構造体の製法
JP3857692B2 (ja) * 2004-01-15 2006-12-13 株式会社東芝 パターン形成方法
KR101310911B1 (ko) * 2006-06-08 2013-09-25 엘지디스플레이 주식회사 평판 표시장치용 폴리실리콘 박막 트랜지스터 기판의제조방법
US8852851B2 (en) * 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
KR100983724B1 (ko) * 2007-12-20 2010-09-24 주식회사 하이닉스반도체 반도체 소자의 형성 방법
JP2010283095A (ja) * 2009-06-04 2010-12-16 Hitachi Ltd 半導体装置の製造方法
NL2004545A (en) * 2009-06-09 2010-12-13 Asml Netherlands Bv Lithographic method and arrangement
US20110294075A1 (en) * 2010-05-25 2011-12-01 United Microelectronics Corp. Patterning method
KR20120063390A (ko) * 2010-12-07 2012-06-15 에스케이하이닉스 주식회사 반도체 소자의 제조 방법
US8901016B2 (en) * 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
KR101434660B1 (ko) * 2012-12-18 2014-08-28 금호석유화학 주식회사 신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물
JP6126961B2 (ja) * 2013-09-30 2017-05-10 富士フイルム株式会社 パターン形成方法、パターンマスクの形成方法及び電子デバイスの製造方法
US10020195B2 (en) * 2014-02-25 2018-07-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
KR20160144146A (ko) * 2015-06-08 2016-12-16 삼성전자주식회사 반도체 장치의 패턴 형성 방법
US10354873B2 (en) * 2016-06-08 2019-07-16 Tokyo Electron Limited Organic mandrel protection process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140352A (ja) * 2001-11-05 2003-05-14 Toshiba Corp 反射防止膜、これを用いたレジストパターン形成方法および半導体装置の製造方法
US20130288487A1 (en) 2011-11-04 2013-10-31 Tokyo Electron Limited Method and system for controlling a spike anneal process
US20190237330A1 (en) * 2018-01-26 2019-08-01 Lam Research Corporation Spacer profile control using atomic layer deposition in a multiple patterning process

Also Published As

Publication number Publication date
US20210088907A1 (en) 2021-03-25
TWI837423B (zh) 2024-04-01
CN114424321B (zh) 2026-03-20
KR20220066898A (ko) 2022-05-24
WO2021062188A1 (en) 2021-04-01
JP2022549067A (ja) 2022-11-24
US20230367217A1 (en) 2023-11-16
TW202127515A (zh) 2021-07-16
JP7508071B2 (ja) 2024-07-01
CN114424321A (zh) 2022-04-29
US11782346B2 (en) 2023-10-10
US12099299B2 (en) 2024-09-24

Similar Documents

Publication Publication Date Title
CN1210618C (zh) 双层制模白板及其制造工艺
TWI625602B (zh) 使用極紫外光微影技術之基板圖案化方法
US10061199B2 (en) Methods of forming a mask for substrate patterning
KR102780324B1 (ko) 유기 필름의 평탄화 방법
US12099299B2 (en) Method of patterning a substrate using a sidewall spacer etch mask
US6887627B2 (en) Method of fabricating phase shift mask
US20240176245A1 (en) Photolithography patterning method
JP2764542B2 (ja) 微細レジストパターン形成方法
KR20250068652A (ko) 반도체 공작물의 패터닝
US7968270B2 (en) Process of making a semiconductor device using multiple antireflective materials
US7316872B2 (en) Etching bias reduction
JPH05234965A (ja) コンタクトホールの形成方法
US8138059B2 (en) Semiconductor device manufacturing method
US6815367B2 (en) Elimination of resist footing on tera hardmask
KR101023077B1 (ko) 마스크 패턴 형성 방법
KR20030049897A (ko) 불화아르곤 노광원을 이용한 패턴 형성 방법
KR20030049900A (ko) 불화아르곤 노광원을 이용한 패턴 형성 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)

P14 Amendment of ip right document requested

Free format text: ST27 STATUS EVENT CODE: A-5-5-P10-P14-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P14-X000 Amendment of ip right document requested

St.27 status event code: A-5-5-P10-P14-nap-X000

P16 Ip right document amended

Free format text: ST27 STATUS EVENT CODE: A-5-5-P10-P16-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P16-X000 Ip right document amended

St.27 status event code: A-5-5-P10-P16-nap-X000

Q16 A copy of ip right certificate issued

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q16-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

Q16-X000 A copy of ip right certificate issued

St.27 status event code: A-4-4-Q10-Q16-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000