JP7505145B2 - 事前に濡れさせたコンタクト側壁表面を備える集積回路パッケージ - Google Patents
事前に濡れさせたコンタクト側壁表面を備える集積回路パッケージ Download PDFInfo
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- JP7505145B2 JP7505145B2 JP2019570362A JP2019570362A JP7505145B2 JP 7505145 B2 JP7505145 B2 JP 7505145B2 JP 2019570362 A JP2019570362 A JP 2019570362A JP 2019570362 A JP2019570362 A JP 2019570362A JP 7505145 B2 JP7505145 B2 JP 7505145B2
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- 238000000034 method Methods 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 49
- 229910000679 solder Inorganic materials 0.000 claims description 44
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 35
- 150000001875 compounds Chemical class 0.000 claims description 15
- 239000004593 Epoxy Substances 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 5
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 12
- 239000000976 ink Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000011179 visual inspection Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
本明細書においてナノAgインクが事前錫めっき材料として記載されているが、錫ナノ粒子、金ナノ粒子などの他のタイプの導電性インクを用いてもよい。
Claims (17)
- 方法であって、
個々のリードフレームを有するリードフレームストリップを封止することであって、前記リードフレームストリップが前記個々のリードフレームに取り付けられるICダイを含み、少なくとも2つの隣接する個々のリードフレームがコンタクト要素を共有する、前記封止することと、
コンタクト側壁表面を形成するために、前記コンタクト要素に隣接する前記封止されたリードフレームストリップにトレンチを部分的にソーイングすることと、
前記トレンチの一部に事前錫めっき材料を堆積することと、
前記コンタクト側壁表面を前記事前錫めっき材料で覆うために、前記事前錫めっき材料をリフローすることと、
前記封止されたリードフレームストリップを個々のICパッケージに分離することであって、前記個々のICパッケージの各々が前記コンタクト側壁表面を有し、前記事前錫めっき材料が前記コンタクト側壁表面上に保護層を形成する、前記分離することと、
を含む、方法。 - 請求項1に記載の方法であって、
前記事前錫めっき材料が銀ナノ粒子を含む、方法。 - 請求項1に記載の方法であって、
前記事前錫めっき材料がはんだである、方法。 - 請求項1に記載の方法であって、
前記事前錫めっき材料がインクジェットプリンタを用いて堆積される、方法。 - 請求項1に記載の方法であって、
前記封止されたフレームストリップを個々のICパッケージに分離することが、前記トレンチより薄い切り口を生成する、方法。 - 請求項1に記載の方法であって、
前記封止されたリードフレームストリップを個々のICパッケージに分離する前に、前記トレンチの全ての残りの非充填部分を背面充填することを更に含む、方法。 - 方法であって、
個々のリードフレームを有するリードフレームストリップを封止することであって、前記リードフレームストリップが前記個々のリードフレームに取り付けられる集積回路(IC)ダイを含み、少なくとも2つの隣接する個々のリードフレームがコンタクト要素を共有する、前記封止することと、
コンタクト側壁表面を形成するために前記コンタクト要素に隣接して前記封止されたリードフレームストリップにトレンチを部分的にソーイングすることと、
前記トレンチの一部に事前錫めっき材料を堆積することと、
前記コンタクト側壁表面を前記事前錫めっき材料で覆うために前記事前錫めっき材料をリフローすることであって、前記事前錫めっき材料が前記コンタクト側壁表面上に保護層を形成する、前記リフローすることと、
前記トレンチの全ての残りの部分を充填材料で充填することと、
前記封止されたリードフレームストリップを個々のICパッケージに分離することであって、前記個々のICパッケージの各々が前記コンタクト側壁表面を有する、前記分離することと、
を含む、方法。 - 請求項7に記載の方法であって、
前記充填材料がエポキシ化合物である、方法。 - 請求項8に記載の方法であって、
前記エポキシ化合物がモールド化合物である、方法。 - 方法であって、
個々のリードフレームを有するリードフレームストリップを封止することであって、前記リードフレームストリップが前記個々のリードフレームに取り付けられる集積回路(IC)ダイを含み、少なくとも2つの隣接する個々のリードフレームがコンタクト要素を共有する、前記封止することと、
コンタクト側壁表面を形成するために前記コンタクト要素に隣接する前記封止されたリードフレームストリップ内にトレンチを部分的にソーイングすることと、
前記トレンチ内に事前錫めっき材料を堆積することと、
前記コンタクト側壁表面を前記事前錫めっき材料で覆うために前記事前錫めっき材料をリフローすることであって、前記事前錫めっき材料が前記コンタクト側壁表面上に保護層を形成し、前記リフローすることの後に前記トレンチの少なくとも一部に空いた部分を残す、前記リフローすることと、
前記封止されたリードフレームストリップを個々のICパッケージに分離することであって、前記ICパッケージの各々が前記コンタクト側壁表面を有する、前記分離することと、
を含む、方法。 - 請求項10に記載の方法であって、
前記事前錫めっき材料が銀ナノ粒子を含む、方法。 - 請求項10に記載の方法であって、前記事前錫めっき材料がはんだである、方法。
- 請求項10に記載の方法であって、
前記事前錫めっき材料がインクジェットプリンタを用いて堆積される、方法。 - 請求項10に記載の方法であって、
前記封止されたリードフレームストリップを個々のICパッケージに分離することが、前記トレンチよりも薄い切り口を生成する、方法。 - 請求項10に記載の方法であって、
前記封止されたリードフレームストリップを個々のICパッケージに分離することの前に前記トレンチを充填材料で裏面充填することを更に含む、方法。 - 請求項15に記載の方法であって、
前記充填材料がエポキシ化合物である、方法。 - 請求項16に記載の方法であって、
前記エポキシ化合物がモールド化合物である、方法。
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