JP7490094B2 - 機械学習を用いた半導体オーバーレイ測定 - Google Patents

機械学習を用いた半導体オーバーレイ測定 Download PDF

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JP7490094B2
JP7490094B2 JP2022579815A JP2022579815A JP7490094B2 JP 7490094 B2 JP7490094 B2 JP 7490094B2 JP 2022579815 A JP2022579815 A JP 2022579815A JP 2022579815 A JP2022579815 A JP 2022579815A JP 7490094 B2 JP7490094 B2 JP 7490094B2
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JP2023531530A (ja
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アルピット ヤティ
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KLA Corp
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00—Pattern recognition
    • G06F18/20—Analysing
    • G06F18/24—Classification techniques
    • G06F18/241—Classification techniques relating to the classification model, e.g. parametric or non-parametric approaches
    • G06F18/2413—Classification techniques relating to the classification model, e.g. parametric or non-parametric approaches based on distances to training or reference patterns
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/12—Edge-based segmentation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20081—Training; Learning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20084—Artificial neural networks [ANN]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Data Mining & Analysis (AREA)
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  • General Engineering & Computer Science (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Artificial Intelligence (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Image Analysis (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
JP2022579815A 2020-06-24 2021-06-23 機械学習を用いた半導体オーバーレイ測定 Active JP7490094B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
IN202041026631 2020-06-24
IN202041026631 2020-06-24
US202063063973P 2020-08-11 2020-08-11
US63/063,973 2020-08-11
US17/135,998 2020-12-29
US17/135,998 US11967058B2 (en) 2020-06-24 2020-12-29 Semiconductor overlay measurements using machine learning
PCT/US2021/038563 WO2021262778A1 (en) 2020-06-24 2021-06-23 Semiconductor overlay measurements using machine learning

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JP2023531530A JP2023531530A (ja) 2023-07-24
JP2023531530A5 JP2023531530A5 (https=) 2024-04-04
JP7490094B2 true JP7490094B2 (ja) 2024-05-24

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US (1) US11967058B2 (https=)
EP (1) EP4150662A4 (https=)
JP (1) JP7490094B2 (https=)
KR (1) KR102797875B1 (https=)
CN (1) CN115699282A (https=)
IL (1) IL298625B2 (https=)
TW (1) TWI864292B (https=)
WO (1) WO2021262778A1 (https=)

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US12014961B2 (en) * 2021-04-19 2024-06-18 Nanya Technology Corporation Method of semiconductor overlay measuring and method of semiconductor structure manufacturing
US12535744B2 (en) * 2022-10-31 2026-01-27 Kla Corporation Overlay estimation based on optical inspection and machine learning

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WO2017130304A1 (ja) 2016-01-27 2017-08-03 株式会社日立ハイテクノロジーズ 計測装置、方法および表示装置
JP2018522238A (ja) 2015-07-13 2018-08-09 アプライド マテリアルズ イスラエル リミテッド 多層構造体の層間のオーバレイを測定する技法
WO2020109074A1 (en) 2018-11-30 2020-06-04 Asml Netherlands B.V. Method for decreasing uncertainty in machine learning model predictions
WO2021038815A1 (ja) 2019-08-30 2021-03-04 株式会社日立ハイテク 計測システム、所定の構造を含む半導体の画像計測を行う際に用いる学習モデルを生成する方法、およびコンピュータに、所定の構造を含む半導体の画像計測を行う際に用いる学習モデルを生成する処理を実行させるためのプログラムを格納する記憶媒体

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KR100834832B1 (ko) 2006-11-29 2008-06-03 삼성전자주식회사 오버레이 계측설비를 이용한 패턴의 임계치수 측정방법
US8148682B2 (en) * 2009-12-29 2012-04-03 Hitachi, Ltd. Method and apparatus for pattern position and overlay measurement
JP5081276B2 (ja) 2010-06-02 2012-11-28 株式会社日立ハイテクノロジーズ パターン計測装置、パターン計測方法、およびプログラム
JP6029293B2 (ja) * 2012-03-07 2016-11-24 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡の画像処理装置、および、走査方法
KR102521159B1 (ko) * 2014-11-25 2023-04-13 피디에프 솔루션즈, 인코포레이티드 반도체 제조 공정을 위한 개선된 공정 제어 기술
US10545490B2 (en) * 2015-06-01 2020-01-28 Applied Materials Israel Ltd. Method of inspecting a specimen and system thereof
US10615084B2 (en) 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
US11580398B2 (en) 2016-10-14 2023-02-14 KLA-Tenor Corp. Diagnostic systems and methods for deep learning models configured for semiconductor applications
US10817999B2 (en) 2017-07-18 2020-10-27 Kla Corporation Image-based overlay metrology and monitoring using through-focus imaging
US10915017B2 (en) * 2017-08-31 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-function overlay marks for reducing noise and extracting focus and critical dimension information
US10795268B2 (en) * 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
US10837919B2 (en) * 2017-11-06 2020-11-17 Kla Corporation Single cell scatterometry overlay targets
CN116758012A (zh) 2018-06-08 2023-09-15 Asml荷兰有限公司 确定与在衬底上的结构相关的感兴趣的特性的方法、掩模版、衬底
US11094053B2 (en) 2018-10-08 2021-08-17 Kla Corporation Deep learning based adaptive regions of interest for critical dimension measurements of semiconductor substrates
US12197138B2 (en) * 2021-02-25 2025-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Machine learning on overlay management

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Publication number Priority date Publication date Assignee Title
JP2018522238A (ja) 2015-07-13 2018-08-09 アプライド マテリアルズ イスラエル リミテッド 多層構造体の層間のオーバレイを測定する技法
WO2017130304A1 (ja) 2016-01-27 2017-08-03 株式会社日立ハイテクノロジーズ 計測装置、方法および表示装置
WO2020109074A1 (en) 2018-11-30 2020-06-04 Asml Netherlands B.V. Method for decreasing uncertainty in machine learning model predictions
WO2021038815A1 (ja) 2019-08-30 2021-03-04 株式会社日立ハイテク 計測システム、所定の構造を含む半導体の画像計測を行う際に用いる学習モデルを生成する方法、およびコンピュータに、所定の構造を含む半導体の画像計測を行う際に用いる学習モデルを生成する処理を実行させるためのプログラムを格納する記憶媒体

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WO2021262778A1 (en) 2021-12-30
JP2023531530A (ja) 2023-07-24
TW202205160A (zh) 2022-02-01
IL298625B1 (en) 2025-06-01
KR20230027074A (ko) 2023-02-27
IL298625B2 (en) 2025-10-01
IL298625A (en) 2023-01-01
CN115699282A (zh) 2023-02-03
US20210407073A1 (en) 2021-12-30
EP4150662A4 (en) 2024-06-12
US11967058B2 (en) 2024-04-23
KR102797875B1 (ko) 2025-04-17
EP4150662A1 (en) 2023-03-22
TWI864292B (zh) 2024-12-01

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