JP7489125B2 - 高性能太陽電池、アレイ、およびその製造方法 - Google Patents
高性能太陽電池、アレイ、およびその製造方法 Download PDFInfo
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- JP7489125B2 JP7489125B2 JP2022168206A JP2022168206A JP7489125B2 JP 7489125 B2 JP7489125 B2 JP 7489125B2 JP 2022168206 A JP2022168206 A JP 2022168206A JP 2022168206 A JP2022168206 A JP 2022168206A JP 7489125 B2 JP7489125 B2 JP 7489125B2
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Description
本出願は、2016年12月9日に出願された「高性能太陽電池、アレイ、およびその製造方法」と題された米国仮特許出願第62/432,289号の出願の優先権およびその利益を主張するものであり、その明細書および特許請求の範囲は参照により本明細書に組み込まれる。
本発明は、高性能太陽電池構造、そのようなセルから作られたアレイ、およびそのようなデバイスおよびシステムを生成するための高スループットで低コストの製造方法に関する。
Claims (23)
- インターコネクトされた光電池セルのアレイであって、
電気的に直列に接続された複数の第1の光電池セルの第1のストリングと、
電気的に直列に接続された複数の第2の光電池セルの第2のストリングであって、前記第1のストリングと電気的に並列に接続された、第2のストリングと、
を含み、
前記アレイは、可撓性絶縁層および/または可撓性絶縁・導電性複合層上に設けられており、
前記複数の第1の光電池セルの各々は第1の形状を有し、前記複数の第2の光電池セルの各々は前記第1の形状とは異なる第2の形状を有し、
その異なる形状により、前記アレイを柔軟にすることができる、
インターコネクトされた光電池セルのアレイ。 - 前記複数の第1の光電池セルの各々は、ほぼ第1の表面積を有し、前記複数の第2の光電池セルの各々は、前記第1の表面積とは異なるほぼ第2の表面積を有する、請求項1に記載のアレイ。
- 2つより多い方向に可撓である、請求項1に記載のアレイ。
- 前記第1のストリングによって発生された電圧は、前記第2のストリングによって発生された電圧とほぼ同じである、請求項1に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々の表面積は、約100μm2~約3000mm2である、請求項1に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々の表面積は、約0.1mm2~約100mm2である、請求項5に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々によって生成される電流は、約1.1A未満である、請求項1に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々によって生成される電流は、約50mA未満である、請求項7に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々は、集電金属を通る電力損失を前記第1の光電池セルおよび前記第2の光電池セルの各々から利用可能な全電力の約10%未満に制限するのに必要な集電金属の量のみをほぼ含む、請求項1に記載のインターコネクトされた光電池セルのアレイ。
- インターコネクトされた光電池セルのアレイであって、
電気的に直列に接続された複数の第1の光電池セルの第1のストリングと、
電気的に直列に接続された複数の第2の光電池セルの第2のストリングであって、前記第1のストリングと電気的に並列に接続された、第2のストリングと、
を含み、
前記アレイは、可撓性絶縁層および/または可撓性絶縁・導電性複合層上に設けられており、
前記複数の第1の光電池セルのうちの少なくとも1つは、前記複数の第1の光電池セルのうちの別のものとは異なる形状を有し、前記複数の第2の光電池セルのうちの少なくとも1つは、前記複数の第2の光電池セルのうちの別のものとは異なる形状を有し、
その異なる形状により、前記アレイを柔軟にすることができる、
インターコネクトされた光電池セルのアレイ。 - 前記複数の第1の光電池セルの各々は、ほぼ第1の表面積を有し、前記複数の第2の光電池セルの各々は、前記第1の表面積とは異なるほぼ第2の表面積を有する、請求項10に記載のアレイ。
- 2つより多い方向に可撓である、請求項10に記載のアレイ。
- 前記第1のストリングによって発生された電圧は、前記第2のストリングによって発生された電圧とほぼ同じである、請求項10に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々の表面積は、約100μm2~約3000mm2である、請求項10に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々の表面積は、約0.1mm2~約100mm2である、請求項14に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々によって生成される電流は、約1.1A未満である、請求項10に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々によって生成される電流は、約50mA未満である、請求項16に記載のインターコネクトされた光電池セルのアレイ。
- 前記第1の光電池セルおよび前記第2の光電池セルの各々は、集電金属を通る電力損失を前記第1の光電池セルおよび前記第2の光電池セルの各々から利用可能な全電力の約10%未満に制限するのに必要な集電金属の量のみをほぼ含む、請求項10に記載のインターコネクトされた光電池セルのアレイ。
- インターコネクトされた光電池セルのアレイを製造する方法であって、
光電池力ウェハをメタライゼーション処理するステップと、
前記ウェハを伸縮性キャリアに接着するステップと、
レーザを使用して前記ウェハから個々の光電池セルを個別化するステップであって、前記個々のセルが複数の形状および/または向きを有するステップと、
前記個々のセルの互いに対する相対的な向きを維持しながら前記個々のセルを分離するステップと、
可撓性絶縁層および/または可撓性絶縁・導電性複合層を前記ウェハに追加するステップと、
前記個々のセルを電気的にインターコネクトするステップと、
前記アレイを前記キャリアから取り外すステップと、を含み、
前記アレイの個々のセルは、前記相対的な向きのままである、
製造方法。 - レーザを使用する前記ステップは、前記セルをメタライゼーションする前に実行される、請求項19に記載のインターコネクトされた光電池セルのアレイを製造する方法。
- 前記レーザは、垂直共振器面発光レーザ(VCSEL)または垂直外部共振器面発光レーザ(VECSEL)を含む、請求項19に記載のインターコネクトされた光電池セルのアレイを製造する方法。
- 前記分離するステップが、前記伸縮性キャリアを延伸するステップを含む、請求項19に記載のインターコネクトされた光電池セルのアレイを製造する方法。
- 前記分離するステップの後のセル間の距離は、約5μm~250μmである、請求項19に記載のインターコネクトされた光電池セルのアレイを製造する方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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US10804201B2 (en) * | 2017-12-28 | 2020-10-13 | Texas Instruments Incorporated | Dissimilar material interface having lattices |
US10914848B1 (en) | 2018-07-13 | 2021-02-09 | mPower Technology, Inc. | Fabrication, integration and operation of multi-function radiation detection systems |
WO2020254865A1 (fr) * | 2019-06-21 | 2020-12-24 | Garmin Switzerland | Dispositif photovoltaïque multi-cellule semi-transparent |
CN110429154A (zh) * | 2019-08-14 | 2019-11-08 | 宁波尤利卡太阳能科技发展有限公司 | 一种拼片电池及其制备方法 |
WO2021155266A1 (en) * | 2020-01-29 | 2021-08-05 | mPower Technology, Inc. | Structured assembly and interconnect for photovoltaic systems |
KR102474546B1 (ko) | 2020-04-20 | 2022-12-08 | 영남대학교 산학협력단 | 반사판 최적 설계를 이용한 발전량 패턴 조절이 가능한 수직설치형 양면수광형 태양광 모듈 시스템 |
CN112599637B (zh) * | 2020-12-09 | 2022-05-31 | 成都晔凡科技有限公司 | 制造太阳能电池片的方法和太阳能电池小片 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002343995A (ja) | 2001-05-11 | 2002-11-29 | Sony Corp | 集積型薄膜素子およびその製造方法 |
JP2009043872A (ja) | 2007-08-08 | 2009-02-26 | Sharp Corp | 太陽電池モジュールおよびその製造方法 |
JP2009283940A (ja) | 2008-05-22 | 2009-12-03 | Samsung Electronics Co Ltd | 太陽電池セル及びこれを利用する太陽電池モジュール |
JP2011238717A (ja) | 2010-05-10 | 2011-11-24 | Aritomi Okuno | 全波整流型太陽電池 |
JP2012019094A (ja) | 2010-07-08 | 2012-01-26 | Hitachi High-Technologies Corp | 太陽電池モジュール |
JP2015196163A (ja) | 2014-03-31 | 2015-11-09 | 三菱重工業株式会社 | 加工装置及び加工方法 |
JP2015211154A (ja) | 2014-04-28 | 2015-11-24 | パナソニックIpマネジメント株式会社 | 光起電力装置、それを用いた太陽電池構造体および太陽電池構造体の製造方法 |
US20160043254A1 (en) | 2013-03-29 | 2016-02-11 | Soitec | Multiple transfer assembly process |
Family Cites Families (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4089705A (en) * | 1976-07-28 | 1978-05-16 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Hexagon solar power panel |
US4633031A (en) | 1982-09-24 | 1986-12-30 | Todorof William J | Multi-layer thin film, flexible silicon alloy photovoltaic cell |
US4492743A (en) | 1982-10-15 | 1985-01-08 | Standard Oil Company (Indiana) | Multilayer photoelectrodes and photovoltaic cells |
US4805006A (en) * | 1987-03-25 | 1989-02-14 | Matsushita Electric Works, Ltd. | Light receiving element |
JPH053337A (ja) | 1990-11-28 | 1993-01-08 | Hitachi Ltd | 半導体放射線検出装置及び半導体放射線検出器並びにその製造方法 |
US5374935A (en) | 1993-02-23 | 1994-12-20 | University Of Southern California | Coherent optically controlled phased array antenna system |
US5407491A (en) | 1993-04-08 | 1995-04-18 | University Of Houston | Tandem solar cell with improved tunnel junction |
US5444249A (en) | 1994-02-14 | 1995-08-22 | Telaire Systems, Inc. | NDIR gas sensor |
JP3349318B2 (ja) * | 1995-11-27 | 2002-11-25 | 三洋電機株式会社 | 太陽電池モジュール |
US5733382A (en) * | 1995-12-18 | 1998-03-31 | Hanoka; Jack I. | Solar cell modules and method of making same |
US5730808A (en) | 1996-06-27 | 1998-03-24 | Amoco/Enron Solar | Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates |
DE19819928A1 (de) | 1998-05-05 | 1999-11-11 | Philips Patentverwaltung | Verfahren für ein Schichtbilder erzeugendes Abbildungssystem |
US7189971B2 (en) | 2002-02-15 | 2007-03-13 | Oy Ajat Ltd | Radiation imaging device and system |
US6933505B2 (en) | 2002-03-13 | 2005-08-23 | Oy Ajat Ltd | Low temperature, bump-bonded radiation imaging device |
US6909098B2 (en) | 2002-12-03 | 2005-06-21 | Universities Research Association Inc. | Systems and methods for detecting nuclear radiation in the presence of backgrounds |
JP5171001B2 (ja) * | 2005-09-30 | 2013-03-27 | 三洋電機株式会社 | 太陽電池モジュールの製造方法、太陽電池セルおよび太陽電池モジュール |
WO2009033215A1 (en) | 2007-09-10 | 2009-03-19 | Dyesol Industries Pty Ltd | An array of solar cells |
AT505688A1 (de) | 2007-09-13 | 2009-03-15 | Nanoident Technologies Ag | Sensormatrix aus halbleiterbauteilen |
CN101388417B (zh) | 2007-09-14 | 2011-06-08 | 鸿富锦精密工业(深圳)有限公司 | 太阳能电池组件 |
US9093586B2 (en) | 2007-11-01 | 2015-07-28 | Sandia Corporation | Photovoltaic power generation system free of bypass diodes |
US9141413B1 (en) | 2007-11-01 | 2015-09-22 | Sandia Corporation | Optimized microsystems-enabled photovoltaics |
US7567649B1 (en) | 2008-06-25 | 2009-07-28 | The Boeing Company | Flexible detector for x-ray applications |
KR101003693B1 (ko) | 2008-10-20 | 2010-12-23 | 부산대학교 산학협력단 | 유연한 엑스선 영상센서 |
US8563847B2 (en) | 2009-01-21 | 2013-10-22 | Tenksolar, Inc | Illumination agnostic solar panel |
US8138914B2 (en) | 2009-05-08 | 2012-03-20 | Man Kit Wong | Method and apparatus for implementing enhanced signature checking security measures for solar energy systems |
US8674314B2 (en) | 2009-06-30 | 2014-03-18 | The Penn State Research Foundation | Solid-state nuclear detector |
US10505062B2 (en) | 2009-07-09 | 2019-12-10 | Faquir Chand Jain | High efficiency tandem solar cells and a method for fabricating same |
US8759664B2 (en) | 2009-12-28 | 2014-06-24 | Hanergy Hi-Tech Power (Hk) Limited | Thin film solar cell strings |
US9559229B2 (en) | 2009-12-31 | 2017-01-31 | Epistar Corporation | Multi-junction solar cell |
US20110290296A1 (en) * | 2010-05-27 | 2011-12-01 | Palo Alto Research Center Incorporated | Flexible tiled photovoltaic module |
CN103026502A (zh) * | 2010-07-23 | 2013-04-03 | 瑟雷姆技术公司 | 具有分割式栅线图案的太阳能电池 |
US20130206219A1 (en) | 2010-08-06 | 2013-08-15 | Juanita N. Kurtin | Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein |
CN102097541B (zh) | 2010-11-02 | 2012-12-12 | 南开大学 | 一种提高产业化单室沉积非晶硅基薄膜电池效率的方法 |
CN102044580A (zh) * | 2010-11-09 | 2011-05-04 | 无锡迈福光学科技有限公司 | 柔性太阳能电池板及制备方法 |
US8426725B2 (en) * | 2010-12-13 | 2013-04-23 | Ascent Solar Technologies, Inc. | Apparatus and method for hybrid photovoltaic device having multiple, stacked, heterogeneous, semiconductor junctions |
CN102157622B (zh) | 2011-03-08 | 2013-05-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种串联式单片集成多结薄膜太阳能电池的制造方法 |
US8843769B2 (en) | 2011-04-18 | 2014-09-23 | Texas Instruments Incorporated | Microcontroller with embedded secure feature |
JP2013044723A (ja) | 2011-08-26 | 2013-03-04 | Fujifilm Corp | 放射線検出器、放射線検出器の製造方法、及び放射線画像撮影装置 |
TWI452688B (zh) | 2011-12-27 | 2014-09-11 | Ind Tech Res Inst | 可撓式輻射感測器 |
WO2013126432A1 (en) | 2012-02-21 | 2013-08-29 | California Institute Of Technology | Axially-integrated epitaxially-grown tandem wire arrays |
US8742522B2 (en) | 2012-04-10 | 2014-06-03 | Ev Products, Inc. | Method of making a semiconductor radiation detector |
US20130314236A1 (en) | 2012-05-11 | 2013-11-28 | Area Energy Limited | Photovoltaic arrays |
US8879688B2 (en) | 2012-05-22 | 2014-11-04 | The Boeing Company | Reconfigurable detector system |
SG11201408432YA (en) | 2012-06-22 | 2015-01-29 | Epiworks Inc | Manufacturing semiconductor-based multi-junction photovoltaic devices |
US9116249B1 (en) | 2012-07-26 | 2015-08-25 | Sandia Corporation | Multiple-mode radiation detector |
US10861112B2 (en) | 2012-07-31 | 2020-12-08 | Causam Energy, Inc. | Systems and methods for advanced energy settlements, network-based messaging, and applications supporting the same on a blockchain platform |
US9511393B2 (en) | 2012-08-17 | 2016-12-06 | The Boeing Company | Flexible ultrasound inspection system |
US9356173B2 (en) | 2012-08-31 | 2016-05-31 | Sandia Corporation | Dynamically reconfigurable photovoltaic system |
CN104813480B (zh) | 2012-10-16 | 2017-03-01 | 索莱克赛尔公司 | 用于光伏太阳能电池和模块中的单片集成旁路开关的系统和方法 |
US9780253B2 (en) * | 2014-05-27 | 2017-10-03 | Sunpower Corporation | Shingled solar cell module |
US10833629B2 (en) | 2013-03-15 | 2020-11-10 | Technology Research, Llc | Interface for renewable energy system |
JP5424371B1 (ja) | 2013-05-08 | 2014-02-26 | 誠 雫石 | 固体撮像素子及び撮像装置 |
US9831369B2 (en) | 2013-10-24 | 2017-11-28 | National Technology & Engineering Solutions Of Sandia, Llc | Photovoltaic power generation system with photovoltaic cells as bypass diodes |
US9978895B2 (en) | 2013-10-31 | 2018-05-22 | National Technology & Engineering Solutions Of Sandia, Llc | Flexible packaging for microelectronic devices |
US11811360B2 (en) * | 2014-03-28 | 2023-11-07 | Maxeon Solar Pte. Ltd. | High voltage solar modules |
US20150280025A1 (en) | 2014-04-01 | 2015-10-01 | Sharp Kabushiki Kaisha | Highly efficient photovoltaic energy harvesting device |
US9865757B2 (en) * | 2014-04-23 | 2018-01-09 | Helion Concepts, Inc. | Method for quick self interconnection of photovoltaic cell arrays and panels |
US20150349176A1 (en) * | 2014-05-27 | 2015-12-03 | Cogenra Solar, Inc. | High voltage solar panel |
KR20160010221A (ko) | 2014-07-18 | 2016-01-27 | 삼성전자주식회사 | 의료 영상 촬영 장치 및 그에 따른 영상 처리 방법 |
JP2016122755A (ja) * | 2014-12-25 | 2016-07-07 | シャープ株式会社 | 太陽電池モジュール |
CN107430981A (zh) | 2015-03-13 | 2017-12-01 | 奈特考尔技术公司 | 激光加工的背触异质结太阳能电池 |
US9634048B2 (en) | 2015-03-24 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
US20160359637A1 (en) | 2015-06-07 | 2016-12-08 | mPower Technology, Inc. | Distributed Function Hybrid Integrated Array |
CN105023921B (zh) | 2015-06-17 | 2017-11-28 | 华北电力大学 | 一种钙钛矿‑硅整体级联叠层太阳电池及其制备方法 |
US9680045B2 (en) | 2015-06-25 | 2017-06-13 | International Business Machines Corporation | III-V solar cell structure with multi-layer back surface field |
US10483316B2 (en) | 2016-01-13 | 2019-11-19 | mPower Technology, Inc. | Fabrication and operation of multi-function flexible radiation detection systems |
-
2017
- 2017-12-11 EP EP17878544.0A patent/EP3552242B1/en active Active
- 2017-12-11 US US15/837,842 patent/US10892372B2/en active Active
- 2017-12-11 JP JP2019551910A patent/JP2020501382A/ja active Pending
- 2017-12-11 KR KR1020197019805A patent/KR102550104B1/ko active IP Right Grant
- 2017-12-11 WO PCT/US2017/065614 patent/WO2018107164A1/en unknown
-
2019
- 2019-06-06 IL IL267151A patent/IL267151B2/en unknown
-
2022
- 2022-10-20 JP JP2022168206A patent/JP7489125B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002343995A (ja) | 2001-05-11 | 2002-11-29 | Sony Corp | 集積型薄膜素子およびその製造方法 |
JP2009043872A (ja) | 2007-08-08 | 2009-02-26 | Sharp Corp | 太陽電池モジュールおよびその製造方法 |
JP2009283940A (ja) | 2008-05-22 | 2009-12-03 | Samsung Electronics Co Ltd | 太陽電池セル及びこれを利用する太陽電池モジュール |
JP2011238717A (ja) | 2010-05-10 | 2011-11-24 | Aritomi Okuno | 全波整流型太陽電池 |
JP2012019094A (ja) | 2010-07-08 | 2012-01-26 | Hitachi High-Technologies Corp | 太陽電池モジュール |
US20160043254A1 (en) | 2013-03-29 | 2016-02-11 | Soitec | Multiple transfer assembly process |
JP2015196163A (ja) | 2014-03-31 | 2015-11-09 | 三菱重工業株式会社 | 加工装置及び加工方法 |
JP2015211154A (ja) | 2014-04-28 | 2015-11-24 | パナソニックIpマネジメント株式会社 | 光起電力装置、それを用いた太陽電池構造体および太陽電池構造体の製造方法 |
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EP3552242A1 (en) | 2019-10-16 |
KR20190102204A (ko) | 2019-09-03 |
JP2020501382A (ja) | 2020-01-16 |
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US10892372B2 (en) | 2021-01-12 |
IL267151B1 (en) | 2023-04-01 |
US20180166598A1 (en) | 2018-06-14 |
KR102550104B1 (ko) | 2023-06-30 |
EP3552242B1 (en) | 2021-07-07 |
IL267151A (en) | 2019-08-29 |
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EP3552242A4 (en) | 2020-11-04 |
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