JP7479850B2 - イメージセンサー - Google Patents

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JP7479850B2
JP7479850B2 JP2020001233A JP2020001233A JP7479850B2 JP 7479850 B2 JP7479850 B2 JP 7479850B2 JP 2020001233 A JP2020001233 A JP 2020001233A JP 2020001233 A JP2020001233 A JP 2020001233A JP 7479850 B2 JP7479850 B2 JP 7479850B2
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JP2020113762A5 (enExample
JP2020113762A (ja
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允 基 李
正 生 金
鉉 根 兪
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2020001233A 2019-01-11 2020-01-08 イメージセンサー Active JP7479850B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0003842 2019-01-11
KR1020190003842A KR102651605B1 (ko) 2019-01-11 2019-01-11 이미지 센서

Publications (3)

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JP2020113762A JP2020113762A (ja) 2020-07-27
JP2020113762A5 JP2020113762A5 (enExample) 2023-01-04
JP7479850B2 true JP7479850B2 (ja) 2024-05-09

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JP2020001233A Active JP7479850B2 (ja) 2019-01-11 2020-01-08 イメージセンサー

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US (3) US11355541B2 (enExample)
JP (1) JP7479850B2 (enExample)
KR (1) KR102651605B1 (enExample)
CN (1) CN111435667B (enExample)

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JP7645477B2 (ja) * 2019-10-28 2025-03-14 パナソニックＩｐマネジメント株式会社 撮像装置
US11450700B2 (en) 2020-07-29 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor image sensor pixel isolation structure for reducing crosstalk
KR102868200B1 (ko) * 2020-10-06 2025-10-02 삼성전자주식회사 이미지 센서
KR102853750B1 (ko) * 2021-01-04 2025-09-01 삼성전자주식회사 이미지 센서
US12278250B2 (en) 2021-01-08 2025-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including image sensor and method of forming the same
US12183749B2 (en) * 2021-03-09 2024-12-31 Sharp Kabushiki Kaisha Photoelectric conversion device and X-ray imaging device
KR20220149127A (ko) * 2021-04-30 2022-11-08 삼성전자주식회사 이미지 센서
KR20220152484A (ko) * 2021-05-07 2022-11-16 삼성전자주식회사 이미지 센서
KR20230000681A (ko) 2021-06-25 2023-01-03 삼성전자주식회사 적층 구조의 이미지 센서
CN115735277A (zh) * 2021-06-25 2023-03-03 京东方科技集团股份有限公司 光电传感器、图像传感器和电子装置
KR20230021428A (ko) * 2021-08-05 2023-02-14 삼성전자주식회사 이미지 센서
US20230082000A1 (en) * 2021-09-16 2023-03-16 Au Optronics Corporation Display apparatus
KR20230136299A (ko) 2022-03-18 2023-09-26 삼성전자주식회사 이미지 센서
KR20230138186A (ko) * 2022-03-23 2023-10-05 삼성전자주식회사 Cmos 이미지 센서
US20240038818A1 (en) * 2022-07-29 2024-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of manufacturing
US20240194716A1 (en) * 2022-12-08 2024-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Tapered backside ground structure for pixel array
KR20240109003A (ko) * 2023-01-03 2024-07-10 에스케이하이닉스 주식회사 이미지 센싱 장치 및 그 제조 방법

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JP2010109295A (ja) 2008-10-31 2010-05-13 Sony Corp 固体撮像装置及びその製造方法、並びに電子機器
JP2012084693A (ja) 2010-10-12 2012-04-26 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び電子機器
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Also Published As

Publication number Publication date
KR102651605B1 (ko) 2024-03-27
US20240014235A1 (en) 2024-01-11
US20200227455A1 (en) 2020-07-16
US20220262840A1 (en) 2022-08-18
US12349489B2 (en) 2025-07-01
CN111435667A (zh) 2020-07-21
CN111435667B (zh) 2025-01-07
US11355541B2 (en) 2022-06-07
JP2020113762A (ja) 2020-07-27
US11784202B2 (en) 2023-10-10
KR20200087909A (ko) 2020-07-22

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