KR102651605B1 - 이미지 센서 - Google Patents

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KR102651605B1
KR102651605B1 KR1020190003842A KR20190003842A KR102651605B1 KR 102651605 B1 KR102651605 B1 KR 102651605B1 KR 1020190003842 A KR1020190003842 A KR 1020190003842A KR 20190003842 A KR20190003842 A KR 20190003842A KR 102651605 B1 KR102651605 B1 KR 102651605B1
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pattern
semiconductor layer
region
light blocking
image sensor
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KR1020190003842A
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Korean (ko)
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KR20200087909A (ko
Inventor
이윤기
김정생
유현근
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삼성전자주식회사
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Priority to KR1020190003842A priority Critical patent/KR102651605B1/ko
Priority to CN201911091800.8A priority patent/CN111435667B/zh
Priority to US16/711,295 priority patent/US11355541B2/en
Priority to JP2020001233A priority patent/JP7479850B2/ja
Publication of KR20200087909A publication Critical patent/KR20200087909A/ko
Priority to US17/739,640 priority patent/US11784202B2/en
Priority to US18/470,972 priority patent/US12349489B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H01L27/14623—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H01L27/1463—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020190003842A 2019-01-11 2019-01-11 이미지 센서 Active KR102651605B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020190003842A KR102651605B1 (ko) 2019-01-11 2019-01-11 이미지 센서
CN201911091800.8A CN111435667B (zh) 2019-01-11 2019-11-08 图像传感器
US16/711,295 US11355541B2 (en) 2019-01-11 2019-12-11 Image sensor
JP2020001233A JP7479850B2 (ja) 2019-01-11 2020-01-08 イメージセンサー
US17/739,640 US11784202B2 (en) 2019-01-11 2022-05-09 Image sensor
US18/470,972 US12349489B2 (en) 2019-01-11 2023-09-20 Image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190003842A KR102651605B1 (ko) 2019-01-11 2019-01-11 이미지 센서

Publications (2)

Publication Number Publication Date
KR20200087909A KR20200087909A (ko) 2020-07-22
KR102651605B1 true KR102651605B1 (ko) 2024-03-27

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US (3) US11355541B2 (enExample)
JP (1) JP7479850B2 (enExample)
KR (1) KR102651605B1 (enExample)
CN (1) CN111435667B (enExample)

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US11450700B2 (en) 2020-07-29 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor image sensor pixel isolation structure for reducing crosstalk
KR102868200B1 (ko) * 2020-10-06 2025-10-02 삼성전자주식회사 이미지 센서
KR102853750B1 (ko) * 2021-01-04 2025-09-01 삼성전자주식회사 이미지 센서
US12278250B2 (en) 2021-01-08 2025-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including image sensor and method of forming the same
US12183749B2 (en) * 2021-03-09 2024-12-31 Sharp Kabushiki Kaisha Photoelectric conversion device and X-ray imaging device
KR20220149127A (ko) * 2021-04-30 2022-11-08 삼성전자주식회사 이미지 센서
KR20220152484A (ko) * 2021-05-07 2022-11-16 삼성전자주식회사 이미지 센서
KR20230000681A (ko) 2021-06-25 2023-01-03 삼성전자주식회사 적층 구조의 이미지 센서
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KR20240109003A (ko) * 2023-01-03 2024-07-10 에스케이하이닉스 주식회사 이미지 센싱 장치 및 그 제조 방법

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Also Published As

Publication number Publication date
US20240014235A1 (en) 2024-01-11
US20200227455A1 (en) 2020-07-16
US20220262840A1 (en) 2022-08-18
US12349489B2 (en) 2025-07-01
CN111435667A (zh) 2020-07-21
CN111435667B (zh) 2025-01-07
US11355541B2 (en) 2022-06-07
JP7479850B2 (ja) 2024-05-09
JP2020113762A (ja) 2020-07-27
US11784202B2 (en) 2023-10-10
KR20200087909A (ko) 2020-07-22

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