JP7468811B1 - 化学機械研磨用組成物及び研磨方法 - Google Patents

化学機械研磨用組成物及び研磨方法 Download PDF

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Publication number
JP7468811B1
JP7468811B1 JP2023571859A JP2023571859A JP7468811B1 JP 7468811 B1 JP7468811 B1 JP 7468811B1 JP 2023571859 A JP2023571859 A JP 2023571859A JP 2023571859 A JP2023571859 A JP 2023571859A JP 7468811 B1 JP7468811 B1 JP 7468811B1
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Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
component
mass
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JP2023571859A
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Japanese (ja)
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JPWO2024048271A5 (https=
JPWO2024048271A1 (https=
Inventor
裕也 山田
聖淵 高
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JSR Corp
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JSR Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2023571859A 2022-09-01 2023-08-15 化学機械研磨用組成物及び研磨方法 Active JP7468811B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022139064 2022-09-01
JP2022139064 2022-09-01
PCT/JP2023/029521 WO2024048271A1 (ja) 2022-09-01 2023-08-15 化学機械研磨用組成物及び研磨方法

Publications (3)

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JPWO2024048271A1 JPWO2024048271A1 (https=) 2024-03-07
JP7468811B1 true JP7468811B1 (ja) 2024-04-16
JPWO2024048271A5 JPWO2024048271A5 (https=) 2024-08-06

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ID=90099429

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JP2023571859A Active JP7468811B1 (ja) 2022-09-01 2023-08-15 化学機械研磨用組成物及び研磨方法

Country Status (5)

Country Link
US (1) US20250346784A1 (https=)
JP (1) JP7468811B1 (https=)
CN (1) CN119343748A (https=)
TW (1) TWI859998B (https=)
WO (1) WO2024048271A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006519490A (ja) * 2003-02-27 2006-08-24 キャボット マイクロエレクトロニクス コーポレイション 貴金属のｃｍｐ方法
JP2008300858A (ja) * 2008-07-15 2008-12-11 Fujifilm Corp 金属用研磨液及び研磨方法
JP2014069260A (ja) * 2012-09-28 2014-04-21 Fujimi Inc 研磨用組成物
WO2014175393A1 (ja) * 2013-04-25 2014-10-30 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
JP5760317B2 (ja) * 2010-02-05 2015-08-05 日立化成株式会社 Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020255616A1 (ja) * 2019-06-20 2020-12-24 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
TW202132527A (zh) * 2019-12-12 2021-09-01 日商Ｊｓｒ股份有限公司 化學機械研磨用組成物及研磨方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006519490A (ja) * 2003-02-27 2006-08-24 キャボット マイクロエレクトロニクス コーポレイション 貴金属のｃｍｐ方法
JP2008300858A (ja) * 2008-07-15 2008-12-11 Fujifilm Corp 金属用研磨液及び研磨方法
JP5760317B2 (ja) * 2010-02-05 2015-08-05 日立化成株式会社 Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法
JP2014069260A (ja) * 2012-09-28 2014-04-21 Fujimi Inc 研磨用組成物
WO2014175393A1 (ja) * 2013-04-25 2014-10-30 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法

Also Published As

Publication number Publication date
TW202412093A (zh) 2024-03-16
TWI859998B (zh) 2024-10-21
WO2024048271A1 (ja) 2024-03-07
US20250346784A1 (en) 2025-11-13
JPWO2024048271A1 (https=) 2024-03-07
CN119343748A (zh) 2025-01-21

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