JP7466460B2 - Ｐｖｄプロセスにおける粒子低減のためのプロセスキットの形状寸法 - Google Patents

Ｐｖｄプロセスにおける粒子低減のためのプロセスキットの形状寸法 Download PDF

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JP7466460B2
JP7466460B2 JP2020562069A JP2020562069A JP7466460B2 JP 7466460 B2 JP7466460 B2 JP 7466460B2 JP 2020562069 A JP2020562069 A JP 2020562069A JP 2020562069 A JP2020562069 A JP 2020562069A JP 7466460 B2 JP7466460 B2 JP 7466460B2
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shield
wall
cover ring
gas
substrate
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JPWO2019147493A5 (https=
JP2021511443A5 (https=
JP2021511443A (ja
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アドルフ ミラー アレン
キランクマール ニーラサンドラ サヴァンダイアー
ランディー ディー シュミーディング
ヴァネッサ フォーン
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
JP2020562069A 2018-01-29 2019-01-18 Ｐｖｄプロセスにおける粒子低減のためのプロセスキットの形状寸法 Active JP7466460B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862623081P 2018-01-29 2018-01-29
US62/623,081 2018-01-29
PCT/US2019/014207 WO2019147493A1 (en) 2018-01-29 2019-01-18 Process kit geometry for particle reduction in pvd processes

Publications (4)

Publication Number Publication Date
JP2021511443A JP2021511443A (ja) 2021-05-06
JPWO2019147493A5 JPWO2019147493A5 (https=) 2022-01-26
JP2021511443A5 JP2021511443A5 (https=) 2022-01-26
JP7466460B2 true JP7466460B2 (ja) 2024-04-12

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JP2020562069A Active JP7466460B2 (ja) 2018-01-29 2019-01-18 Ｐｖｄプロセスにおける粒子低減のためのプロセスキットの形状寸法

Country Status (6)

Country Link
US (1) US11935732B2 (https=)
JP (1) JP7466460B2 (https=)
KR (1) KR102717559B1 (https=)
CN (1) CN111602235B (https=)
TW (1) TWI808120B (https=)
WO (1) WO2019147493A1 (https=)

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US20210375650A1 (en) * 2020-06-01 2021-12-02 Applied Materials, Inc. High temperature and vacuum isolation processing mini-environments
US11492697B2 (en) * 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
CN112011759B (zh) * 2020-08-24 2022-06-21 宁波中骏森驰汽车零部件股份有限公司 一种pvd真空镀膜机
TWI834028B (zh) * 2021-03-11 2024-03-01 台灣積體電路製造股份有限公司 物理氣相沉積裝置、沉積薄膜的方法和形成半導體結構的方法
CN113445017B (zh) * 2021-06-01 2022-12-09 北京北方华创微电子装备有限公司 半导体腔室及半导体工艺设备
JP2023146567A (ja) * 2022-03-29 2023-10-12 ラピスセミコンダクタ株式会社 基板処理装置及びカバーリングアセンブリ
CN116288182A (zh) * 2022-11-25 2023-06-23 宁波江丰电子材料股份有限公司 一种溅射用防护圈及其应用
CN115747733A (zh) * 2022-11-25 2023-03-07 宁波江丰电子材料股份有限公司 一种溅射用沉积环及其应用
US12392023B1 (en) * 2024-05-03 2025-08-19 Applied Materials, Inc. Methods and apparatus for depositing amorphous indium tin oxide film

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JP2007277649A (ja) 2006-04-07 2007-10-25 Nec Electronics Corp 真空処理装置
JP2008261047A (ja) 2007-01-29 2008-10-30 Applied Materials Inc 基板処理チャンバ用処理キット
JP2010163690A (ja) 2008-07-31 2010-07-29 Canon Anelva Corp プラズマ処理装置

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JP2008261047A (ja) 2007-01-29 2008-10-30 Applied Materials Inc 基板処理チャンバ用処理キット
JP2010163690A (ja) 2008-07-31 2010-07-29 Canon Anelva Corp プラズマ処理装置

Also Published As

Publication number Publication date
KR102717559B1 (ko) 2024-10-14
CN111602235A (zh) 2020-08-28
CN111602235B (zh) 2025-03-14
TWI808120B (zh) 2023-07-11
TW201932630A (zh) 2019-08-16
KR20200105955A (ko) 2020-09-09
US11935732B2 (en) 2024-03-19
JP2021511443A (ja) 2021-05-06
WO2019147493A1 (en) 2019-08-01
US20190237311A1 (en) 2019-08-01

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