CN111602235B - 用于在pvd处理中减少颗粒的处理配件几何形状 - Google Patents

用于在pvd处理中减少颗粒的处理配件几何形状 Download PDF

Info

Publication number
CN111602235B
CN111602235B CN201980008457.8A CN201980008457A CN111602235B CN 111602235 B CN111602235 B CN 111602235B CN 201980008457 A CN201980008457 A CN 201980008457A CN 111602235 B CN111602235 B CN 111602235B
Authority
CN
China
Prior art keywords
shield
wall
substrate
substrate support
process kit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980008457.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN111602235A (zh
Inventor
阿道夫·M·艾伦
克兰库玛尔·纽拉桑德拉·萨凡迪亚
兰德尔·D·施密丁
凡妮莎·法恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN111602235A publication Critical patent/CN111602235A/zh
Application granted granted Critical
Publication of CN111602235B publication Critical patent/CN111602235B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
CN201980008457.8A 2018-01-29 2019-01-18 用于在pvd处理中减少颗粒的处理配件几何形状 Active CN111602235B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862623081P 2018-01-29 2018-01-29
US62/623,081 2018-01-29
PCT/US2019/014207 WO2019147493A1 (en) 2018-01-29 2019-01-18 Process kit geometry for particle reduction in pvd processes

Publications (2)

Publication Number Publication Date
CN111602235A CN111602235A (zh) 2020-08-28
CN111602235B true CN111602235B (zh) 2025-03-14

Family

ID=67393674

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980008457.8A Active CN111602235B (zh) 2018-01-29 2019-01-18 用于在pvd处理中减少颗粒的处理配件几何形状

Country Status (6)

Country Link
US (1) US11935732B2 (https=)
JP (1) JP7466460B2 (https=)
KR (1) KR102717559B1 (https=)
CN (1) CN111602235B (https=)
TW (1) TWI808120B (https=)
WO (1) WO2019147493A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210375650A1 (en) * 2020-06-01 2021-12-02 Applied Materials, Inc. High temperature and vacuum isolation processing mini-environments
US11492697B2 (en) * 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
CN112011759B (zh) * 2020-08-24 2022-06-21 宁波中骏森驰汽车零部件股份有限公司 一种pvd真空镀膜机
TWI834028B (zh) * 2021-03-11 2024-03-01 台灣積體電路製造股份有限公司 物理氣相沉積裝置、沉積薄膜的方法和形成半導體結構的方法
CN113445017B (zh) * 2021-06-01 2022-12-09 北京北方华创微电子装备有限公司 半导体腔室及半导体工艺设备
JP2023146567A (ja) * 2022-03-29 2023-10-12 ラピスセミコンダクタ株式会社 基板処理装置及びカバーリングアセンブリ
CN116288182A (zh) * 2022-11-25 2023-06-23 宁波江丰电子材料股份有限公司 一种溅射用防护圈及其应用
CN115747733A (zh) * 2022-11-25 2023-03-07 宁波江丰电子材料股份有限公司 一种溅射用沉积环及其应用
US12392023B1 (en) * 2024-05-03 2025-08-19 Applied Materials, Inc. Methods and apparatus for depositing amorphous indium tin oxide film

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
KR101084553B1 (ko) * 2003-10-17 2011-11-17 토소가부시키가이샤 진공장치용 부품과 그 제조방법 및 그것을 이용한 장치
US20070074741A1 (en) * 2005-09-30 2007-04-05 Tokyo Electron Limited Method for dry cleaning nickel deposits from a processing system
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
JP2007277649A (ja) * 2006-04-07 2007-10-25 Nec Electronics Corp 真空処理装置
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
US8435379B2 (en) 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
KR200455917Y1 (ko) * 2007-09-28 2011-09-30 어플라이드 머티어리얼스, 인코포레이티드 원자층 증착 챔버 및 부품들
CN102007572B (zh) * 2008-04-16 2013-01-16 应用材料公司 晶圆处理沉积屏蔽构件
CN102017077B (zh) * 2008-05-02 2012-09-19 应用材料公司 用于射频物理气相沉积的处理套组
WO2010013476A1 (ja) 2008-07-31 2010-02-04 キヤノンアネルバ株式会社 プラズマ処理装置および電子デバイスの製造方法
JP5611350B2 (ja) * 2009-08-11 2014-10-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｒｆ物理気相堆積用のプロセスキット
US9834840B2 (en) 2010-05-14 2017-12-05 Applied Materials, Inc. Process kit shield for improved particle reduction
US8647485B2 (en) 2012-03-30 2014-02-11 Applied Materials, Inc. Process kit shield for plasma enhanced processing chamber
US20130277203A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Process kit shield and physical vapor deposition chamber having same
US9768043B2 (en) * 2013-01-16 2017-09-19 Applied Materials, Inc. Quartz upper and lower domes
WO2015026491A1 (en) * 2013-08-19 2015-02-26 Applied Materials, Inc. Apparatus for impurity layered epitaxy
US10546733B2 (en) 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
US9953812B2 (en) 2015-10-06 2018-04-24 Applied Materials, Inc. Integrated process kit for a substrate processing chamber
SG11201804420UA (en) 2015-11-24 2018-06-28 Applied Materials Inc Pre-coated shield for use in vhf-rf pvd chambers
US11114289B2 (en) 2016-04-27 2021-09-07 Applied Materials, Inc. Non-disappearing anode for use with dielectric deposition

Also Published As

Publication number Publication date
JP7466460B2 (ja) 2024-04-12
KR102717559B1 (ko) 2024-10-14
CN111602235A (zh) 2020-08-28
TWI808120B (zh) 2023-07-11
TW201932630A (zh) 2019-08-16
KR20200105955A (ko) 2020-09-09
US11935732B2 (en) 2024-03-19
JP2021511443A (ja) 2021-05-06
WO2019147493A1 (en) 2019-08-01
US20190237311A1 (en) 2019-08-01

Similar Documents

Publication Publication Date Title
CN111602235B (zh) 用于在pvd处理中减少颗粒的处理配件几何形状
US20240242947A1 (en) Process kit having tall deposition ring for pvd chamber
US7981262B2 (en) Process kit for substrate processing chamber
CN113785084B (zh) 具有原位腔室清洁能力的物理气相沉积(pvd)腔室
CN109585251B (zh) 单件式处理配件屏蔽件
CN1982501B (zh) 用于溅射腔室的靶材和工艺套件组件
KR102709082B1 (ko) 높은 증착 링 및 증착 링 클램프를 갖는 프로세스 키트
JP5611350B2 (ja) Ｒｆ物理気相堆積用のプロセスキット
US20090272647A1 (en) Process kit for rf physical vapor deposition
CN115038808B (zh) 用于物理气相沉积腔室的加热屏蔽
KR20100017278A (ko) 기판 처리 챔버용 냉각 차폐부
WO2017044791A1 (en) One-piece process kit shield for reducing the impact of an electric field near the substrate

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TG01 Patent term adjustment
TG01 Patent term adjustment