JP2021511443A - Pvdプロセスにおける粒子低減のためのプロセスキットの形状寸法 - Google Patents
Pvdプロセスにおける粒子低減のためのプロセスキットの形状寸法 Download PDFInfo
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Abstract
Description
Claims (15)
- 基板処理チャンバ内の基板支持体に面するスパッタリングターゲットを取り囲むように構成されたプロセスキットシールドであって、
前記スパッタリングターゲットを取り囲むように構成された頂壁および前記基板支持体を取り囲むように構成された底壁を有する円筒形バンドと、
前記円筒形バンドの前記底壁から下向きかつ半径方向内向きに延在する傾斜壁であり、実質的に直線のプロファイルを有する、傾斜壁と、
プロセスガスを通過させることができるように前記傾斜壁に位置する少なくとも1つのガス孔と、
を備える、プロセスキットシールド。 - 前記傾斜壁の前記少なくとも1つのガス孔が、約0.2インチ〜約0.8インチの幅、および約1インチ〜2インチの長さを含む、請求項1に記載のプロセスキットシールド。
- 前記傾斜壁が約15度〜45度の角度を含む、請求項1に記載のプロセスキットシールド。
- 前記シールドの露出表面上にミクロまたはマクロのテクスチャコーティングのうちの少なくとも1つを含む、請求項1に記載のプロセスキットシールド。
- 基板処理チャンバ内のスパッタリングターゲットおよび基板支持体の周りに配置するように構成されたプロセスキットであって、
前記スパッタリングターゲットを取り囲むように構成されたシールドであり、
前記スパッタリングターゲットを取り囲むように構成された頂壁および前記基板支持体を取り囲むように構成された底壁を有する円筒形バンド、
前記円筒形バンドの前記底壁から下向きかつ半径方向内向きに延在する傾斜壁で、実質的に直線のプロファイルを有する、傾斜壁、および
プロセスガスを通過させることができるように前記傾斜壁に位置する少なくとも1つのガス孔、
を備える、シールドと、
リングアセンブリであり、
前記基板支持体を取り囲むように構成されたカバーリングで、前記基板支持体の周りに傾斜した頂面を含む環状ウェッジを備え、前記傾斜した頂面が内周および外周を有するカバーリング、前記傾斜した頂面の外周の周りの球状突起、前記傾斜した頂面から下向きに延在するフーチング、前記傾斜した頂面の内周の周りの突出縁部、および前記環状ウェッジから下向きに延在する内側および外側の円筒形バンド、
を備える、リングアセンブリと、
を備える、プロセスキット。 - 前記基板処理チャンバに取り付けられると、前記カバーリングの前記球状突起が、前記シールド上の前記少なくとも1つのガス孔とチャンバ本体キャビティへの入り口との間の見通し線を遮断するように構成されている、請求項5に記載のプロセスキット。
- 前記シールドの前記傾斜壁の前記少なくとも1つのガス孔が、約0.2インチ〜約0.8インチの幅、および約1インチ〜2インチの長さを含む、請求項5に記載のプロセスキット。
- 前記シールドの前記傾斜壁が、約15度〜45度の角度を含む、請求項5に記載のプロセスキット。
- 前記基板処理チャンバ、前記シールド、または前記カバーリングのうちの少なくとも1つの露出表面上にミクロもしくはマクロのテクスチャコーティングのうちの少なくとも1つを含む、請求項5に記載のプロセスキット。
- 前記リングアセンブリが、前記フーチングによって前記カバーリングを支持し、前記基板支持体上に位置する基板の周辺部をシールドするための堆積リングをさらに備える、請求項5に記載のプロセスキット。
- 前記シールドを取り囲み、前記基板処理チャンバのプロセスキャビティ内にプラズマを閉じ込めるように構成されたライナーをさらに備える、請求項5に記載のプロセスキット。
- プロセスキャビティおよびチャンバ本体キャビティを有するプロセスチャンバと、
前記プロセスキャビティ内に配置された基板支持体と、
前記プロセスキャビティ内で前記基板支持体の反対側に配置されたターゲットと、
前記基板支持体および前記ターゲットの周り配置されたプロセスキットと、
を備える、基板を処理するための装置であって、前記プロセスキットが、
前記ターゲットを取り囲むシールドであり、
前記ターゲットを取り囲む頂壁および前記基板支持体を取り囲む底壁を有する円筒形バンド、
前記円筒形バンドの前記底壁から半径方向内向きに延在する傾斜壁で、実質的に直線のプロファイルを有する傾斜壁、および
プロセスガスを通過させることができるように前記傾斜壁に位置する少なくとも1つのガス孔
を備える、シールド
ならびに
リングアセンブリであり、
前記基板支持体の周りに位置するカバーリングで、
前記基板支持体の周りに傾斜した頂面を含む環状ウェッジで、前記傾斜した頂面が内周および外周を有する、環状ウェッジ、
前記傾斜した頂面の外周の周りの球状突起、
前記傾斜した頂面から下向きに延在するフーチング、
前記傾斜した頂面の内周の周りの突出縁部、および
前記環状ウェッジから下向きに延在する内側および外側の円筒形バンド、
を備える、カバーリング
を備える、リングアセンブリ
を備える、
装置。 - 前記カバーリングの前記球状突起が、前記シールド上の前記少なくとも1つのガス孔と前記プロセスチャンバの前記チャンバ本体キャビティへの入り口との間の見通し線を遮断する、請求項12に記載の装置。
- 前記プロセスチャンバの前記プロセスキャビティ、前記シールド、または前記カバーリングのうちの少なくとも1つの露出表面上にミクロもしくはマクロのテクスチャコーティングのうちの少なくとも1つを含み、前記ミクロもしくはマクロのテクスチャコーティングが丸みを帯びた粒子または半円形の突起のうちの少なくとも1つを含む、請求項12に記載の装置。
- 前記プロセスキットが、前記フーチングによって前記カバーリングを支持し、前記基板支持体上に位置する基板の周辺部をシールドするための堆積リング、またはプラズマを前記プロセスチャンバの前記プロセスキャビティ内に閉じ込めるための前記シールドを取り囲むライナーのうちの少なくとも1つをさらに備える、請求項12に記載の装置。
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US62/623,081 | 2018-01-29 | ||
PCT/US2019/014207 WO2019147493A1 (en) | 2018-01-29 | 2019-01-18 | Process kit geometry for particle reduction in pvd processes |
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JPWO2019147493A5 JPWO2019147493A5 (ja) | 2022-01-26 |
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JP (1) | JP7466460B2 (ja) |
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CN113445017B (zh) * | 2021-06-01 | 2022-12-09 | 北京北方华创微电子装备有限公司 | 半导体腔室及半导体工艺设备 |
CN115747733A (zh) * | 2022-11-25 | 2023-03-07 | 宁波江丰电子材料股份有限公司 | 一种溅射用沉积环及其应用 |
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TW201932630A (zh) | 2019-08-16 |
WO2019147493A1 (en) | 2019-08-01 |
TWI808120B (zh) | 2023-07-11 |
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