JP7460937B2 - 面状光源及びその製造方法 - Google Patents
面状光源及びその製造方法 Download PDFInfo
- Publication number
- JP7460937B2 JP7460937B2 JP2023036829A JP2023036829A JP7460937B2 JP 7460937 B2 JP7460937 B2 JP 7460937B2 JP 2023036829 A JP2023036829 A JP 2023036829A JP 2023036829 A JP2023036829 A JP 2023036829A JP 7460937 B2 JP7460937 B2 JP 7460937B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- light source
- wiring layer
- emitting element
- shielding member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title description 29
- 239000000758 substrate Substances 0.000 claims description 57
- 229920005989 resin Polymers 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 46
- 239000002131 composite material Substances 0.000 claims description 29
- 238000000605 extraction Methods 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 125
- 238000006243 chemical reaction Methods 0.000 description 54
- 239000000463 material Substances 0.000 description 45
- 239000002184 metal Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 23
- 230000003014 reinforcing effect Effects 0.000 description 15
- 239000011247 coating layer Substances 0.000 description 11
- 229920002050 silicone resin Polymers 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 230000037303 wrinkles Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000006121 base glass Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Description
(面状光源100)
[実施形態1]
(発光素子20)
(支持部材51)
(配線層40)
(補強基板52)
(遮光部材54)
(透光性部材60)
(波長変換部材70)
(光拡散層)
[実施形態2]
[実施形態3]
[面状光源の製造方法]
(中間体2を準備する工程)
(発光素子20を配置する工程)
(第一被覆層30を形成する工程)
(配線層40を形成する工程)
(被覆部材31を配置する工程)
(遮光部材を配置する工程)
(被覆部材31を表出させる工程)
(被覆部材31を除去する工程)
(透光性部材60を配置する工程)
(配線層40の端子部分43に必要な配線を行う工程)
(波長変換部材70を配置する工程)
(遮光部材54の穴部56の内面に段差を形成する工程)
[実施形態4]
[実施形態6]
1…第一中間体
2…中間体
10…支持部
11…剥離層
12…保護層
13…第二透光性部材
20…発光素子
20a…電極形成面
20b…光取り出し面
21…素子電極
30…第一被覆層
31…被覆部材
32…第二被覆部材
40…配線層;40A…第一配線層;40B…第二配線層
41…第一金属層
42…第二金属層
43…端子部分
44…フレキシブル基板
45…実装領域
46…延出領域
48…絶縁部材
50…複合基板
51…支持部材
51b…光反射性樹脂
52…補強基板
54…遮光部材;54B…第二遮光部材
56…穴部
56A…穴部;56B…穴部
60、60a、60b…透光性部材
62…接着層
70…波長変換部材
71…第一波長変換部材
72…第二波長変換部材
73a、73b…保護膜
80…導光板
81…第一凸部
82…凸部
83…第二凹部
90…プリズムシート
M…マスク;M1…第一マスク;M2…第二マスク
RS…レジスト
PG…プレス用ガラス基板
Claims (6)
- 光反射性樹脂で構成された支持部材と、前記支持部材上に配置された配線層と、を含む複合基板と、
前記複合基板上に配置され、穴部を複数有する遮光部材と、
前記遮光部材の複数の穴部内において、それぞれ配線層に配置された複数の発光素子と、
前記穴部内及び前記遮光部材上に配置された透光性部材と、
を備え、
前記支持部材が、前記配線層の側面及び下面を覆い、
前記穴部の底面は、前記支持部材の上面と前記配線層の上面とで規定され、
前記発光素子は、正負の素子電極を備える電極形成面と、電極形成面と反対側の光取り出し面とを有し、
前記支持部材が、前記素子電極の側面を被覆している面状光源。 - 請求項1に記載の面状光源であって、
前記穴部内で表出される前記配線層の幅を、厚さよりも小さくしてなる面状光源。 - 請求項1又は2に記載の面状光源であって、
前記複数の発光素子が、前記複合基板の平面視において、行列状に配置されてなる面状光源。 - 請求項1~3のいずれか一項に記載の面状光源であって、
前記遮光部材で囲まれた前記配線層の一部が、前記発光素子を実装しない、端子部分を形成してなる面状光源。 - 請求項1~4のいずれか一項に記載の面状光源であって、
前記素子電極が前記配線層の上面に対向するように配置される面状光源。 - 請求項1~5のいずれか一項に記載の面状光源であって、
前記遮光部材が、前記穴部を断面視において、開口端を段差状に形成してなる面状光源。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020067099 | 2020-04-02 | ||
JP2020067099 | 2020-04-02 | ||
JP2020097985 | 2020-06-04 | ||
JP2020097985 | 2020-06-04 | ||
JP2020186783A JP7244771B2 (ja) | 2020-04-02 | 2020-11-09 | 面状光源の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020186783A Division JP7244771B2 (ja) | 2020-04-02 | 2020-11-09 | 面状光源の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023073273A JP2023073273A (ja) | 2023-05-25 |
JP7460937B2 true JP7460937B2 (ja) | 2024-04-03 |
Family
ID=77922183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023036829A Active JP7460937B2 (ja) | 2020-04-02 | 2023-03-09 | 面状光源及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US12027501B2 (ja) |
JP (1) | JP7460937B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7328557B2 (ja) * | 2020-11-30 | 2023-08-17 | 日亜化学工業株式会社 | 光源、光源装置および光源の製造方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004193357A (ja) | 2002-12-11 | 2004-07-08 | Matsushita Electric Ind Co Ltd | Led光源、led照明装置、およびled表示装置 |
JP2005268600A (ja) | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 発光ダイオードモジュールとその製造方法 |
JP2005311314A (ja) | 2004-03-26 | 2005-11-04 | Matsushita Electric Ind Co Ltd | Led実装用モジュール、ledモジュール、led実装用モジュールの製造方法及びledモジュールの製造方法 |
JP2007173397A (ja) | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 発光モジュールとこれを用いた表示装置及び照明装置 |
JP2008124242A (ja) | 2006-11-13 | 2008-05-29 | Matsushita Electric Ind Co Ltd | 熱伝導基板とその製造方法及び回路モジュール |
JP2009206228A (ja) | 2008-02-27 | 2009-09-10 | Toshiba Corp | 側面型発光装置及びその製造方法、照明装置 |
JP2012004430A (ja) | 2010-06-18 | 2012-01-05 | Kyocera Corp | 発光ユニットおよび発光器具 |
JP2013008941A (ja) | 2011-06-22 | 2013-01-10 | Lg Innotek Co Ltd | 発光素子モジュール |
US20130256711A1 (en) | 2012-03-30 | 2013-10-03 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US20140124730A1 (en) | 2012-11-05 | 2014-05-08 | Byung Yeon CHOI | Light emitting device and light emitting device array |
JP2015532541A (ja) | 2012-10-17 | 2015-11-09 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 複数のオプトエレクトロニクス半導体素子を製造するための方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0810211Y2 (ja) | 1990-09-27 | 1996-03-27 | 株式会社小糸製作所 | チツプ型発光ダイオードの取付構造 |
JP4171107B2 (ja) | 1998-07-09 | 2008-10-22 | スタンレー電気株式会社 | 面状光源 |
JP2004335629A (ja) | 2003-05-06 | 2004-11-25 | Sony Corp | チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウェーハ及びその製造方法 |
JP2005183718A (ja) | 2003-12-19 | 2005-07-07 | Seiko Epson Corp | 回路基板、電気光学装置及び電子機器 |
JP2006093612A (ja) | 2004-09-27 | 2006-04-06 | Kyocera Corp | 発光装置および照明装置 |
JP4619080B2 (ja) | 2004-09-28 | 2011-01-26 | 京セラ株式会社 | 発光装置 |
JP2006100441A (ja) | 2004-09-28 | 2006-04-13 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置ならびに照明装置 |
JP2007012781A (ja) | 2005-06-29 | 2007-01-18 | Alps Electric Co Ltd | 回路基板の製造方法及び回路基板及び表示装置 |
TWI401820B (zh) * | 2007-11-07 | 2013-07-11 | Ind Tech Res Inst | 發光元件及其製作方法 |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP5508244B2 (ja) | 2010-11-15 | 2014-05-28 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
US20120305956A1 (en) * | 2011-06-01 | 2012-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Led phosphor patterning |
JP5753446B2 (ja) * | 2011-06-17 | 2015-07-22 | 株式会社東芝 | 半導体発光装置の製造方法 |
KR101891620B1 (ko) * | 2011-09-22 | 2018-08-27 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
JP2013153068A (ja) | 2012-01-25 | 2013-08-08 | Shinko Electric Ind Co Ltd | 配線基板、発光装置及び配線基板の製造方法 |
CN103311378A (zh) | 2012-03-06 | 2013-09-18 | 展晶科技(深圳)有限公司 | Led封装结构的制造方法 |
JP2013247301A (ja) | 2012-05-28 | 2013-12-09 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP6762736B2 (ja) | 2015-03-16 | 2020-09-30 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法 |
WO2016148019A1 (ja) | 2015-03-16 | 2016-09-22 | 日東電工株式会社 | 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法 |
JP6217711B2 (ja) | 2015-08-21 | 2017-10-25 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10199533B2 (en) | 2015-12-21 | 2019-02-05 | Nichia Corporation | Method of manufacturing light emitting device |
JP6384533B2 (ja) | 2015-12-21 | 2018-09-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10361349B2 (en) * | 2017-09-01 | 2019-07-23 | Cree, Inc. | Light emitting diodes, components and related methods |
JP7128411B2 (ja) | 2018-08-03 | 2022-08-31 | 日亜化学工業株式会社 | 発光装置、発光モジュール及びその製造方法 |
-
2021
- 2021-03-31 US US17/219,221 patent/US12027501B2/en active Active
-
2023
- 2023-03-09 JP JP2023036829A patent/JP7460937B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004193357A (ja) | 2002-12-11 | 2004-07-08 | Matsushita Electric Ind Co Ltd | Led光源、led照明装置、およびled表示装置 |
JP2005268600A (ja) | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 発光ダイオードモジュールとその製造方法 |
JP2005311314A (ja) | 2004-03-26 | 2005-11-04 | Matsushita Electric Ind Co Ltd | Led実装用モジュール、ledモジュール、led実装用モジュールの製造方法及びledモジュールの製造方法 |
JP2007173397A (ja) | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 発光モジュールとこれを用いた表示装置及び照明装置 |
JP2008124242A (ja) | 2006-11-13 | 2008-05-29 | Matsushita Electric Ind Co Ltd | 熱伝導基板とその製造方法及び回路モジュール |
JP2009206228A (ja) | 2008-02-27 | 2009-09-10 | Toshiba Corp | 側面型発光装置及びその製造方法、照明装置 |
JP2012004430A (ja) | 2010-06-18 | 2012-01-05 | Kyocera Corp | 発光ユニットおよび発光器具 |
JP2013008941A (ja) | 2011-06-22 | 2013-01-10 | Lg Innotek Co Ltd | 発光素子モジュール |
US20130256711A1 (en) | 2012-03-30 | 2013-10-03 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
JP2015532541A (ja) | 2012-10-17 | 2015-11-09 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 複数のオプトエレクトロニクス半導体素子を製造するための方法 |
US20140124730A1 (en) | 2012-11-05 | 2014-05-08 | Byung Yeon CHOI | Light emitting device and light emitting device array |
Also Published As
Publication number | Publication date |
---|---|
JP2023073273A (ja) | 2023-05-25 |
US12027501B2 (en) | 2024-07-02 |
US20210313302A1 (en) | 2021-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI744756B (zh) | 發光模組 | |
US11616169B2 (en) | Light emitting module with concave surface light guide plate | |
JP7007591B2 (ja) | 発光モジュール | |
CN112310056B (zh) | 发光装置和面发光光源 | |
JP6787515B1 (ja) | 発光装置および面発光光源 | |
JP7108203B2 (ja) | 発光モジュールの製造方法 | |
JP2019212662A (ja) | 発光モジュールおよび面発光光源 | |
JP7530019B2 (ja) | 発光装置の製造方法 | |
JP6928289B2 (ja) | 発光モジュール | |
JP7460937B2 (ja) | 面状光源及びその製造方法 | |
US11650365B2 (en) | Surface light source | |
JP7153850B2 (ja) | 面発光光源 | |
JP6849139B1 (ja) | 発光装置および面発光光源 | |
JP6959535B2 (ja) | 発光装置 | |
JP7244771B2 (ja) | 面状光源の製造方法 | |
JP6863420B2 (ja) | 発光モジュール及びその製造方法、液晶表示装置 | |
JP6933817B2 (ja) | 発光装置の製造方法 | |
JP7534627B2 (ja) | 発光装置および面状光源 | |
JP7116327B2 (ja) | 発光モジュールおよび発光モジュールの製造方法 | |
JP2022129961A (ja) | 発光装置および面状光源 | |
JP2021141051A (ja) | 発光モジュール | |
JP2021131932A (ja) | 発光モジュールの製造方法及び発光モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230309 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231221 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240220 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240304 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7460937 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |