JP7459937B2 - 共振子及び共振装置 - Google Patents
共振子及び共振装置 Download PDFInfo
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- JP7459937B2 JP7459937B2 JP2022518594A JP2022518594A JP7459937B2 JP 7459937 B2 JP7459937 B2 JP 7459937B2 JP 2022518594 A JP2022518594 A JP 2022518594A JP 2022518594 A JP2022518594 A JP 2022518594A JP 7459937 B2 JP7459937 B2 JP 7459937B2
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
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- 238000005452 bending Methods 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
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- 230000009467 reduction Effects 0.000 description 4
- -1 scandium aluminum Chemical compound 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
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- 229910052759 nickel Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
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- 238000007254 oxidation reaction Methods 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical group [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2478—Single-Ended Tuning Fork resonators
- H03H9/2489—Single-Ended Tuning Fork resonators with more than two fork tines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02511—Vertical, i.e. perpendicular to the substrate plane
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
まず、図1及び図2を参照しつつ、第1実施形態に従う共振装置の概略構成について説明する。図1は、第1実施形態における共振装置1の外観を概略的に示す斜視図である。図2は、図1に示す共振装置1の構造を概略的に示す分解斜視図である。
次に、図16から図21を参照しつつ、本発明の第2実施形態に従う共振子及び共振装置について説明する。なお、以下の各実施形態において、第1実施形態と同一又は類似の構成について同一又は類似の符号を付し、第1実施形態と異なる点について説明する。また、同様の構成による同様の作用効果については、逐次言及しない。
Claims (10)
- それぞれが固定端を有する3本以上の複数の振動腕であって、少なくとも2本が異なる位相で面外屈曲する複数の振動腕と、前記複数の振動腕のそれぞれの前記固定端が接続された一端と該一端に対向する他端とを有する基部と、を含む振動部と、
前記振動部を保持するように構成された保持部と、
一端が前記保持部に接続され、他端が前記基部の前記他端に接続された支持腕と、を備え、
前記支持腕は、平面視において、前記振動部における長手方向の中心線に関して非対称であり、
前記支持腕は、前記中心線に関して一方側から他方側に延在しており、
前記支持腕の前記他端は、前記基部の前記他端における前記他方側の位置に接続されている、
共振子。 - 前記支持腕の前記他端は、前記基部の前記他端において、前記中心線からずれた位置に接続されている、
請求項1に記載の共振子。 - 2本の前記支持腕を備え、
前記2本の支持腕のうちの一方の前記支持腕と他方の前記支持腕とは、平面視において、前記中心線に関して非対称である、
請求項1又は2に記載の共振子。 - 前記2本の支持腕のうちの一方の前記支持腕と他方の前記支持腕とは、支持腕幅の長さが異なる、
請求項3に記載の共振子。 - 前記2本の支持腕のうちの一方の前記支持腕と他方の前記支持腕とは、支持腕長の長さが異なる、
請求項3又は4に記載の共振子。 - 前記基部の前記一端から前記他端に向かう方向の長さ方向における基部長の長さは、前記基部の前記長さ方向に直交する幅方向における基部幅の長さに対して0.3倍以下である、
請求項1から5のいずれか一項に記載の共振子。 - 前記基部長の長さは90μm以下であり、前記基部幅の長さは300μm以下である、
請求項6に記載の共振子。 - それぞれが固定端を有する3本以上の複数の振動腕であって、少なくとも2本が異なる位相で面外屈曲する複数の振動腕と、前記複数の振動腕のそれぞれの前記固定端が接続された一端と該一端に対向する他端と側端とを有する基部と、を含む振動部と、
前記振動部を保持するように構成された保持部と、
一端が前記保持部に接続され、他端が前記基部の前記側端に接続された支持腕と、を備え、
前記支持腕は、平面視において、前記振動部における長手方向の中心線に関して一方側から他方側に延在しており、
前記支持腕の前記他端は、前記基部における前記他方側の前記側端に接続されている、
共振子。 - 請求項1から8のいずれか一項に記載の共振子を備える、
共振装置。 - 蓋体をさらに備える、
請求項9に記載の共振装置。
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JP2020078246 | 2020-04-27 | ||
JP2020078246 | 2020-04-27 | ||
PCT/JP2020/041997 WO2021220535A1 (ja) | 2020-04-27 | 2020-11-11 | 共振子及び共振装置 |
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JPWO2021220535A1 JPWO2021220535A1 (ja) | 2021-11-04 |
JPWO2021220535A5 JPWO2021220535A5 (ja) | 2022-10-19 |
JP7459937B2 true JP7459937B2 (ja) | 2024-04-02 |
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US (1) | US11824517B2 (ja) |
JP (1) | JP7459937B2 (ja) |
CN (1) | CN115398802A (ja) |
WO (1) | WO2021220535A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016174789A1 (ja) | 2015-04-27 | 2016-11-03 | 株式会社村田製作所 | 共振子及び共振装置 |
WO2017064916A1 (ja) | 2015-10-13 | 2017-04-20 | 株式会社村田製作所 | 共振子及び共振装置 |
WO2018216264A1 (ja) | 2017-05-25 | 2018-11-29 | 株式会社村田製作所 | 共振子及び共振装置 |
Family Cites Families (1)
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CN107534432B (zh) * | 2015-04-28 | 2020-06-05 | 株式会社村田制作所 | 谐振子以及谐振装置 |
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2020
- 2020-11-11 JP JP2022518594A patent/JP7459937B2/ja active Active
- 2020-11-11 CN CN202080099331.9A patent/CN115398802A/zh active Pending
- 2020-11-11 WO PCT/JP2020/041997 patent/WO2021220535A1/ja active Application Filing
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2022
- 2022-09-28 US US17/954,892 patent/US11824517B2/en active Active
Patent Citations (3)
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WO2016174789A1 (ja) | 2015-04-27 | 2016-11-03 | 株式会社村田製作所 | 共振子及び共振装置 |
WO2017064916A1 (ja) | 2015-10-13 | 2017-04-20 | 株式会社村田製作所 | 共振子及び共振装置 |
WO2018216264A1 (ja) | 2017-05-25 | 2018-11-29 | 株式会社村田製作所 | 共振子及び共振装置 |
Also Published As
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CN115398802A (zh) | 2022-11-25 |
JPWO2021220535A1 (ja) | 2021-11-04 |
US11824517B2 (en) | 2023-11-21 |
US20230014350A1 (en) | 2023-01-19 |
WO2021220535A1 (ja) | 2021-11-04 |
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