JP7458195B2 - 載置台、プラズマ処理装置及びクリーニング処理方法 - Google Patents

載置台、プラズマ処理装置及びクリーニング処理方法 Download PDF

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Publication number
JP7458195B2
JP7458195B2 JP2020020840A JP2020020840A JP7458195B2 JP 7458195 B2 JP7458195 B2 JP 7458195B2 JP 2020020840 A JP2020020840 A JP 2020020840A JP 2020020840 A JP2020020840 A JP 2020020840A JP 7458195 B2 JP7458195 B2 JP 7458195B2
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mounting table
hole
plasma
mounting
sleeve member
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Japanese (ja)
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JP2021128956A5 (https=
JP2021128956A (ja
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孝博 仙田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2020020840A priority Critical patent/JP7458195B2/ja
Priority to CN202110143492.XA priority patent/CN113257653B/zh
Priority to KR1020210015297A priority patent/KR20210102075A/ko
Priority to US17/166,132 priority patent/US12300471B2/en
Publication of JP2021128956A publication Critical patent/JP2021128956A/ja
Publication of JP2021128956A5 publication Critical patent/JP2021128956A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020020840A 2020-02-10 2020-02-10 載置台、プラズマ処理装置及びクリーニング処理方法 Active JP7458195B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020020840A JP7458195B2 (ja) 2020-02-10 2020-02-10 載置台、プラズマ処理装置及びクリーニング処理方法
CN202110143492.XA CN113257653B (zh) 2020-02-10 2021-02-02 载置台、等离子体处理装置以及清洁处理方法
KR1020210015297A KR20210102075A (ko) 2020-02-10 2021-02-03 거치대, 플라즈마 처리 장치 및 클리닝 처리 방법
US17/166,132 US12300471B2 (en) 2020-02-10 2021-02-03 Stage, plasma processing apparatus, and cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020020840A JP7458195B2 (ja) 2020-02-10 2020-02-10 載置台、プラズマ処理装置及びクリーニング処理方法

Publications (3)

Publication Number Publication Date
JP2021128956A JP2021128956A (ja) 2021-09-02
JP2021128956A5 JP2021128956A5 (https=) 2022-12-08
JP7458195B2 true JP7458195B2 (ja) 2024-03-29

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JP2020020840A Active JP7458195B2 (ja) 2020-02-10 2020-02-10 載置台、プラズマ処理装置及びクリーニング処理方法

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Country Link
US (1) US12300471B2 (https=)
JP (1) JP7458195B2 (https=)
KR (1) KR20210102075A (https=)
CN (1) CN113257653B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
JP7647781B2 (ja) * 2023-02-22 2025-03-18 Toto株式会社 静電チャック及びその製造方法
JP7409536B1 (ja) 2023-02-22 2024-01-09 Toto株式会社 静電チャック及びその製造方法
JP7480876B1 (ja) 2023-02-22 2024-05-10 Toto株式会社 静電チャック及びその製造方法
JP7409535B1 (ja) 2023-02-22 2024-01-09 Toto株式会社 静電チャック及びその製造方法
JP7647782B2 (ja) * 2023-02-22 2025-03-18 Toto株式会社 静電チャック及びその製造方法
JP7647783B2 (ja) * 2023-02-22 2025-03-18 Toto株式会社 静電チャック及びその製造方法
CN121925993A (zh) * 2023-09-27 2026-04-24 日本碍子株式会社 半导体制造装置用部件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222799A (ja) 2001-01-25 2002-08-09 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法
JP2006344766A (ja) 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2017519373A (ja) 2014-05-16 2017-07-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ペデスタルの流体による熱制御
WO2020004478A1 (ja) 2018-06-29 2020-01-02 北陸成型工業株式会社 静電チャック

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US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20070283891A1 (en) * 2006-03-29 2007-12-13 Nobuyuki Okayama Table for supporting substrate, and vacuum-processing equipment
JP2010182763A (ja) * 2009-02-04 2010-08-19 Hitachi High-Technologies Corp プラズマ処理装置
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US9685356B2 (en) * 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
JP6017328B2 (ja) * 2013-01-22 2016-10-26 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6658509B2 (ja) * 2015-02-18 2020-03-04 住友大阪セメント株式会社 静電チャック装置及び半導体製造装置
JP2016225439A (ja) * 2015-05-29 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置及び基板剥離検知方法
JP6026620B2 (ja) 2015-10-22 2016-11-16 東京エレクトロン株式会社 載置台、プラズマ処理装置及び載置台の製造方法
JP6688715B2 (ja) * 2016-09-29 2020-04-28 東京エレクトロン株式会社 載置台及びプラズマ処理装置
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JP2002222799A (ja) 2001-01-25 2002-08-09 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法
JP2006344766A (ja) 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2017519373A (ja) 2014-05-16 2017-07-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ペデスタルの流体による熱制御
WO2020004478A1 (ja) 2018-06-29 2020-01-02 北陸成型工業株式会社 静電チャック

Also Published As

Publication number Publication date
CN113257653B (zh) 2025-09-30
CN113257653A (zh) 2021-08-13
US12300471B2 (en) 2025-05-13
KR20210102075A (ko) 2021-08-19
JP2021128956A (ja) 2021-09-02
US20210249236A1 (en) 2021-08-12

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