JP7446363B2 - 基板処理方法、改質装置及び基板処理システム - Google Patents
基板処理方法、改質装置及び基板処理システム Download PDFInfo
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Description
本願は、2018年6月12日に日本国に出願された特願2018-111598号に基づき、優先権を主張し、その内容をここに援用する。
153 レーザ照射部
W 基板
W1 第1の基板
W2 第2の基板
Claims (9)
- 基板を処理する基板処理方法であって、
少なくとも第1の基板の裏面表層に、レーザ光を照射して改質層を形成し、前記第1の基板の裏面を粗化する改質工程と、
その後、保持部の保持面に前記第1の基板の裏面が保持された状態で、前記第1の基板の表面と第2の基板の表面とを接合する表面処理工程と、を有し、
前記改質工程では、前記第1の基板の裏面を粗化して、当該第1の基板の裏面と前記保持部の保持面との摩擦力を低下させる。
- 請求項1に記載の基板処理方法において、
前記改質工程において、少なくとも前記第2の基板の裏面表層に前記改質層を形成し、前記第2の基板の裏面を粗化する。 - 請求項2に記載の基板処理方法において、
前記表面処理工程は、
前記第1の基板の裏面を真空引きして第1の保持部で保持し、前記第2の基板の裏面を真空引きして第2の保持部で保持した後、当該第1の基板と第2の基板を対向対置する配置工程と、
その後、前記第1の保持部に設けられ、前記第1の基板の中心部を押圧する押動部材を下降させ、当該押動部材によって前記第1の基板の中心部と前記第2の基板の中心部を押圧して当接させる押圧工程と、
その後、前記第1の基板の中心部と前記第2の基板の中心部が押圧された状態で、前記第1の基板の中心部から外周部に向けて、前記第1の基板と前記第2の基板を順次接合する接合工程と、を有する。 - 請求項2に記載の基板処理方法において、
前記改質工程の後、前記第1の基板の裏面を研削する加工工程を有し、
前記改質工程において、前記改質層は、前記加工工程において前記第1の基板が当該改質層を含めて研削される位置に形成される。 - 保持部の保持面に第1の基板の裏面が保持された状態で基板の表面を処理する前に、前記第1の基板に改質層を形成する改質装置であって、
少なくとも前記第1の基板の裏面表層に、レーザ光を照射して改質層を形成し、前記第1の基板の裏面を粗化して、当該第1の基板の裏面と前記保持部の保持面との摩擦力を低下させるレーザ照射部を有する。
- 基板を処理する基板処理システムであって、
少なくとも第1の基板の裏面表層に、レーザ光を照射して改質層を形成し、前記第1の基板の裏面を粗化するレーザ照射部を備えた改質装置と、
保持部の保持面に前記第1の基板の裏面が保持された状態で、前記改質層が形成された前記第1の基板の表面と、第2の基板の表面とを接合する接合装置と、
前記改質装置と前記接合装置に対して、前記第1の基板と前記第2の基板を搬送する搬送装置と、を有し、
前記レーザ照射部は、前記第1の基板の裏面を粗化して、当該第1の基板の裏面と前記保持部の保持面との摩擦力を低下させる。
- 請求項6に記載の基板処理システムにおいて、
前記改質装置は、前記第2の基板の裏面表層に前記改質層を形成し、前記第2の基板の裏面を粗化する。 - 請求項6に記載の基板処理システムにおいて、
前記接合装置は、
前記第1の基板の裏面を吸着保持する第1の保持部と、
前記第2の基板の裏面を吸着保持する第2の保持部と、
前記第1の保持部に設けられ、前記第1の基板の中心部を押圧する押動部材と、を有する。 - 請求項6に記載の基板処理システムにおいて、
前記改質層が形成された前記第1の基板の裏面を研削する加工装置を有し、
前記改質装置は、前記加工装置において前記第1の基板が前記改質層を含めて研削される位置に、当該改質層を形成する。
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