JP7442754B1 - 光半導体素子 - Google Patents

光半導体素子 Download PDF

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Publication number
JP7442754B1
JP7442754B1 JP2023566997A JP2023566997A JP7442754B1 JP 7442754 B1 JP7442754 B1 JP 7442754B1 JP 2023566997 A JP2023566997 A JP 2023566997A JP 2023566997 A JP2023566997 A JP 2023566997A JP 7442754 B1 JP7442754 B1 JP 7442754B1
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JP
Japan
Prior art keywords
waveguide
light
tapered
gain
optical
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JP2023566997A
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English (en)
Japanese (ja)
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JPWO2024236697A1 (https=
JPWO2024236697A5 (https=
Inventor
智志 西川
雅広 松浦
涼子 鈴木
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Priority to JP2024004283A priority Critical patent/JP7446553B1/ja
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Publication of JPWO2024236697A1 publication Critical patent/JPWO2024236697A1/ja
Publication of JPWO2024236697A5 publication Critical patent/JPWO2024236697A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/295—Analog deflection from or in an optical waveguide structure]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
JP2023566997A 2023-05-15 2023-05-15 光半導体素子 Active JP7442754B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024004283A JP7446553B1 (ja) 2023-05-15 2024-01-16 光半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/018127 WO2024236697A1 (ja) 2023-05-15 2023-05-15 光半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024004283A Division JP7446553B1 (ja) 2023-05-15 2024-01-16 光半導体素子

Publications (3)

Publication Number Publication Date
JP7442754B1 true JP7442754B1 (ja) 2024-03-04
JPWO2024236697A1 JPWO2024236697A1 (https=) 2024-11-21
JPWO2024236697A5 JPWO2024236697A5 (https=) 2025-04-22

Family

ID=90096850

Family Applications (2)

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JP2023566997A Active JP7442754B1 (ja) 2023-05-15 2023-05-15 光半導体素子
JP2024004283A Active JP7446553B1 (ja) 2023-05-15 2024-01-16 光半導体素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024004283A Active JP7446553B1 (ja) 2023-05-15 2024-01-16 光半導体素子

Country Status (3)

Country Link
JP (2) JP7442754B1 (https=)
CN (1) CN121175890A (https=)
WO (1) WO2024236697A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010003950A (ja) * 2008-06-23 2010-01-07 Nec Corp 光半導体装置
JP2010226062A (ja) * 2009-03-25 2010-10-07 Fujitsu Ltd 光導波素子とその製造方法、半導体素子、レーザモジュール及び光伝送システム
JP2012113267A (ja) * 2010-11-29 2012-06-14 Canon Inc 光走査装置
JP2014154680A (ja) * 2013-02-07 2014-08-25 Furukawa Electric Co Ltd:The 半導体レーザ装置
CN106921441A (zh) * 2017-03-13 2017-07-04 南京邮电大学 一种可实现无差异混频的相干光接收机
JP2018151538A (ja) * 2017-03-14 2018-09-27 沖電気工業株式会社 光導波路素子
CN211126441U (zh) * 2020-03-05 2020-07-28 度亘激光技术（苏州）有限公司 一种激光器
US20200366061A1 (en) * 2018-02-05 2020-11-19 Zhejiang University Tunable semiconductor laser based on half-wave coupled partial reflectors
JP2021158268A (ja) * 2020-03-27 2021-10-07 株式会社デンソー 半導体発光素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614585B1 (en) 1999-05-06 2003-09-02 Trumpf Photonics Inc. Phase conjugating structure for mode matching in super luminescent diode cavities
EP1507321B1 (en) 2003-08-11 2006-10-25 Lumera Laser GmbH Solid state laser pumped by a laser diode with a convergent beam
CN111308829A (zh) 2020-04-10 2020-06-19 上海大学 一种PbS/SiO2共掺纳米集成锥形光纤放大器及其制备方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010003950A (ja) * 2008-06-23 2010-01-07 Nec Corp 光半導体装置
JP2010226062A (ja) * 2009-03-25 2010-10-07 Fujitsu Ltd 光導波素子とその製造方法、半導体素子、レーザモジュール及び光伝送システム
JP2012113267A (ja) * 2010-11-29 2012-06-14 Canon Inc 光走査装置
JP2014154680A (ja) * 2013-02-07 2014-08-25 Furukawa Electric Co Ltd:The 半導体レーザ装置
CN106921441A (zh) * 2017-03-13 2017-07-04 南京邮电大学 一种可实现无差异混频的相干光接收机
JP2018151538A (ja) * 2017-03-14 2018-09-27 沖電気工業株式会社 光導波路素子
US20200366061A1 (en) * 2018-02-05 2020-11-19 Zhejiang University Tunable semiconductor laser based on half-wave coupled partial reflectors
CN211126441U (zh) * 2020-03-05 2020-07-28 度亘激光技术（苏州）有限公司 一种激光器
JP2021158268A (ja) * 2020-03-27 2021-10-07 株式会社デンソー 半導体発光素子

Also Published As

Publication number Publication date
JP7446553B1 (ja) 2024-03-08
JPWO2024236697A1 (https=) 2024-11-21
WO2024236697A1 (ja) 2024-11-21
JP2024164794A (ja) 2024-11-27
CN121175890A (zh) 2025-12-19

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