JP7294453B2 - 直接変調レーザ - Google Patents
直接変調レーザ Download PDFInfo
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- JP7294453B2 JP7294453B2 JP2021563589A JP2021563589A JP7294453B2 JP 7294453 B2 JP7294453 B2 JP 7294453B2 JP 2021563589 A JP2021563589 A JP 2021563589A JP 2021563589 A JP2021563589 A JP 2021563589A JP 7294453 B2 JP7294453 B2 JP 7294453B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (6)
- 基板の上に形成された分布帰還型のレーザ活性領域と、
前記基板の上に形成され、前記レーザ活性領域の導波方向の一端に光学的に接続され、導波方向の両端に反射点が形成された、光導波路構造によるファブリペロー型の光帰還領域と
を備え、
前記光帰還領域のコアは、前記レーザ活性領域のコアとは、厚さおよび幅の少なくとも1つが異なり、
前記レーザ活性領域で生成される光の周波数と、前記光帰還領域のファブリペローモードの周波数との周波数差に応じて発生する光子-光子共鳴を用いてレーザ発振させる
ことを特徴とする直接変調レーザ。 - 請求項1記載の直接変調レーザにおいて、
前記基板の上に形成され、前記レーザ活性領域の導波方向の他端に光学的に接続されたDBR領域をさらに備える
ことを特徴とする直接変調レーザ。 - 基板の上に形成された分布帰還型のレーザ活性領域と、
前記基板の上に形成され、前記レーザ活性領域の導波方向の一端に光学的に接続され、導波方向の両端に反射点が形成された、光導波路構造によるファブリペロー型の光帰還領域と
を備え、
前記基板の上に形成され、前記レーザ活性領域の導波方向の他端に光学的に接続されたDBR領域をさらに備え、
前記光帰還領域の前記レーザ活性領域の側の幅と、前記光帰還領域の前記レーザ活性領域とは反対側の反射点の幅とが異なり、
前記レーザ活性領域で生成される光の周波数と、前記光帰還領域のファブリペローモードの周波数との周波数差に応じて発生する光子-光子共鳴を用いてレーザ発振させる
ことを特徴とする直接変調レーザ。 - 請求項1~3のいずれか1項に記載の直接変調レーザにおいて、
前記光帰還領域に電流を注入する、前記光帰還領域の温度を制御する、前記光帰還領域に電界を印加するのいずれかにより、前記光帰還領域のファブリペローモードの周波数を調整する周波数調整機構をさらに備える
ことを特徴とする直接変調レーザ。 - 請求項1~4のいずれか1項に記載の直接変調レーザにおいて、
前記レーザ活性領域は、
前記基板の平面方向に電流を注入する電流注入機構を備える
を備えることを特徴とする直接変調レーザ。 - 請求項1~5のいずれか1項に記載の直接変調レーザにおいて、
前記基板の上に形成され、前記光帰還領域の導波方向の、前記レーザ活性領域とは反対側に光学的に接続されたDBR領域をさらに備える
ことを特徴とする直接変調レーザ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPPCT/JP2019/048115 | 2019-12-09 | ||
PCT/JP2019/048115 WO2021117095A1 (ja) | 2019-12-09 | 2019-12-09 | 直接変調レーザ |
PCT/JP2020/014478 WO2021117263A1 (ja) | 2019-12-09 | 2020-03-30 | 直接変調レーザ |
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JPWO2021117263A1 JPWO2021117263A1 (ja) | 2021-06-17 |
JP7294453B2 true JP7294453B2 (ja) | 2023-06-20 |
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US (1) | US20220416505A1 (ja) |
JP (1) | JP7294453B2 (ja) |
WO (2) | WO2021117095A1 (ja) |
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WO2023223450A1 (ja) * | 2022-05-18 | 2023-11-23 | 日本電信電話株式会社 | 半導体光集積デバイス |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033551A (ja) | 2000-07-18 | 2002-01-31 | Hitachi Ltd | 光送信装置及び光伝送システム |
DE102006045876A1 (de) | 2006-09-23 | 2008-04-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Bestimmung von Strukturgrößen und Arbeitspunkten eines einmodigen, direkt modulierbaren Halbleiter-Mehrsektionslasers und mit dem Verfahren konzeptionierter Halbleiter-Mehrsektionslaser |
JP2017017077A (ja) | 2015-06-26 | 2017-01-19 | 日本電信電話株式会社 | 半導体レーザ光源 |
JP2018006440A (ja) | 2016-06-29 | 2018-01-11 | 日本電信電話株式会社 | 半導体レーザ |
JP2019091780A (ja) | 2017-11-14 | 2019-06-13 | 日本電信電話株式会社 | 半導体光素子 |
JP2019204904A (ja) | 2018-05-24 | 2019-11-28 | 日本電信電話株式会社 | 半導体光モジュール |
-
2019
- 2019-12-09 WO PCT/JP2019/048115 patent/WO2021117095A1/ja active Application Filing
-
2020
- 2020-03-30 US US17/777,818 patent/US20220416505A1/en active Pending
- 2020-03-30 WO PCT/JP2020/014478 patent/WO2021117263A1/ja active Application Filing
- 2020-03-30 JP JP2021563589A patent/JP7294453B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033551A (ja) | 2000-07-18 | 2002-01-31 | Hitachi Ltd | 光送信装置及び光伝送システム |
DE102006045876A1 (de) | 2006-09-23 | 2008-04-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Bestimmung von Strukturgrößen und Arbeitspunkten eines einmodigen, direkt modulierbaren Halbleiter-Mehrsektionslasers und mit dem Verfahren konzeptionierter Halbleiter-Mehrsektionslaser |
JP2017017077A (ja) | 2015-06-26 | 2017-01-19 | 日本電信電話株式会社 | 半導体レーザ光源 |
JP2018006440A (ja) | 2016-06-29 | 2018-01-11 | 日本電信電話株式会社 | 半導体レーザ |
JP2019091780A (ja) | 2017-11-14 | 2019-06-13 | 日本電信電話株式会社 | 半導体光素子 |
JP2019204904A (ja) | 2018-05-24 | 2019-11-28 | 日本電信電話株式会社 | 半導体光モジュール |
Non-Patent Citations (2)
Title |
---|
BARDELLA Paolo, MONTROSSET Ivo,A New Design Procedure for DBR Lasers Exploiting the Photon-Photon Resonance to Achieve Extended Mod,IEEE Journal of Selected Topics in Quantum Electronics,米国,2013年07月,Vol.19, No.4,p.1502408,1-8,DOI: 10.1109/JSTQE.2013.2250260,ISSN 1077-260X |
MIEDA Shigeru et al.,Ultra-Wide-Bandwidth Optically Controlled DFB Laser With External Cavity,IEEE Journal of Quantum Electronics,米国,2016年06月,Vol.52, No.6,p. 2200107.1-7,DOI:10.1109/JQE.2016.2557489,ISSN 0018-9197 |
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Publication number | Publication date |
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WO2021117263A1 (ja) | 2021-06-17 |
US20220416505A1 (en) | 2022-12-29 |
WO2021117095A1 (ja) | 2021-06-17 |
JPWO2021117263A1 (ja) | 2021-06-17 |
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