JP7432584B2 - 照明モジュール及びこれを備えた照明アセンブリ - Google Patents
照明モジュール及びこれを備えた照明アセンブリ Download PDFInfo
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- JP7432584B2 JP7432584B2 JP2021512876A JP2021512876A JP7432584B2 JP 7432584 B2 JP7432584 B2 JP 7432584B2 JP 2021512876 A JP2021512876 A JP 2021512876A JP 2021512876 A JP2021512876 A JP 2021512876A JP 7432584 B2 JP7432584 B2 JP 7432584B2
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- resin layer
- substrate
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- light emitting
- lighting
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- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Marketing (AREA)
- Accounting & Taxation (AREA)
- Business, Economics & Management (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Description
t%の範囲を有することができる。前記拡散剤の含有量が前記範囲より小さい場合、ホットスポットを減らすことに限界があり、前記範囲より大きい場合、光透過率が低下することがある。よって、前記拡散剤は、前記第1樹脂層130内に前記含有量で配置されることで、光を拡散させて光透過率が低下することなくホットスポットを減らすことができる。前記第2樹脂層140に拡散物質や遮光物質が配置された場合、前記第1樹脂層130の拡散剤は除去されてもよい。照明モジュールでは、前記第1樹脂層130を1つの層で形成したが、これに限定されるものではなく、2つ以上の樹脂層を含むことができる。前記第1樹脂層130は、不純物が含まれない透光層と、前記透光層の上に拡散剤を含む拡散層を含むことができる。これと異なるように、拡散層を透光層の下に形成することができる。
Claims (15)
- 基板と、前記基板の上に配置される複数の発光素子と、前記複数の発光素子を覆う第1樹脂層と、前記第1樹脂層の上に配置される少なくとも1つの第2樹脂層と、を含む照明モジュール、及び
前記照明モジュールの前記基板の外側周りに沿って前記基板の外縁部上に配置される第1カバー、を含み、
前記第2樹脂層は、前記第1樹脂層の上面及び側面に配置され、
前記第2樹脂層は、蛍光体及びインク粒子を含み、
前記第1カバーは、前記第2樹脂層が突出した開口部と、前記開口部の周り及び前記基板の上面外縁部に配置される基板カバー部と、前記基板カバー部から前記基板の側面より低く延長される側面カバー部と、を含み、
前記基板カバー部の上面は、前記第1樹脂層の上面より低く配置され、
前記基板の上面面積は、前記第1樹脂層の下面面積より大きく、
前記基板の上面外縁部は、前記第2樹脂層のエッジからさらに外側に延長される、照明アセンブリ。 - 前記照明モジュールの前記基板の下に基板支持部と、前記基板支持部の外縁周りに段付き結合部と、を有する第2カバーを含み、
前記第2カバーの前記段付き結合部は、前記第1カバーの前記側面カバー部と結合される、請求項1に記載の照明アセンブリ。 - 前記第1カバー及び前記第2カバーは、前記第1カバーと前記第2カバーの間の領域から外側に突出し、前記基板に連結される電源ケーブルが引出されるケーブル引出部を含む、請求項2に記載の照明アセンブリ。
- 前記第2カバーは、前記基板の下面の端子が露出する端子溝を含み、
前記端子溝の側面は、前記照明モジュールのいずれか一側面方向に傾斜する、請求項2に記載の照明アセンブリ。 - 前記基板の側面と前記第2樹脂層の側面の間の距離は、前記照明モジュールの厚さの0.1倍以上であり、
前記基板の上面外縁部の長さは、前記第2樹脂層の側面から前記基板のエッジまでの距離であり、0.3mm~1mmの範囲である、請求項1から4のいずれか一項に記載の照明アセンブリ。 - 前記基板の上面と前記第2樹脂層の上面は、突出した曲面を含む、請求項1から5のいずれか一項に記載の照明アセンブリ。
- 前記第1カバーは、前記基板の方向に突出した係止突起を含む、請求項1から6のいずれか一項に記載の照明アセンブリ。
- 前記第1カバーは、複数の開口部を含み、
前記照明モジュールは、複数の前記開口部のそれぞれに突出する、請求項1から7いずれか一項に記載の照明アセンブリ。 - 前記基板のエッジは、前記第2樹脂層の下端周りよりさらに外側に延長され、
前記照明モジュールの厚さは、5.5mm以下であり、
前記照明モジュールの厚さは、前記第1樹脂層の厚さの180%~220%の範囲である、請求項1から8のいずれか一項に記載の照明アセンブリ。 - 前記複数の発光素子のそれぞれは、フリップチップタイプで前記基板上に配置され、
前記第2樹脂層における前記蛍光体の含有量は、23wt%以下であり、前記インク粒子の含有量は、3wt%~13wt%の範囲である、請求項1から9のいずれか一項に記載の照明アセンブリ。 - 基板と、前記基板の上に配置される複数の発光素子と、前記複数の発光素子を覆う第1樹脂層と、前記第1樹脂層の上に配置される少なくとも1つの第2樹脂層と、を含む照明モジュール、及び
前記照明モジュールの前記基板の外側周りに沿って前記基板の外縁部上に配置される第1カバーと、前記照明モジュールの下部を支持する第2カバーと、を含むカバー、を含み、
前記第2樹脂層は、前記第1樹脂層の表面に配置され、内部に蛍光体及びインク粒子を含み、
前記第1カバーは、前記第1樹脂層及び前記第2樹脂層が突出する開口部と、前記開口部の周り及び前記基板の上面外縁部に配置される基板カバー部と、前記基板カバー部から前記基板の側面に延長される側面カバー部と、を含み、
前記基板の上面面積は、前記第1樹脂層の下面面積より大きく、
前記基板のエッジは、前記第2樹脂層の下端周りよりさらに外側に延長され、
前記カバーは、前記照明モジュールの一端に隣接する両側面から前記基板の方向に凹んだ第1結合部材及び第2結合部材を含む、照明アセンブリ。 - 前記第2カバーは、下部に複数の端子溝を含み、
前記基板の下面に配置された端子は、前記端子溝を通じて露出する、請求項11に記載の照明アセンブリ。 - 前記第2カバーは、下部に複数の端子溝を含み、
前記複数の端子溝は、前記第1結合部材及び前記第2結合部材を連結する仮想の直線よりも前記照明モジュールの一端に隣接するように配置される、請求項11に記載の照明アセンブリ。 - 前記第2樹脂層の側面及び前記第2樹脂層の上面と側面の間の角部分は、突出した曲面を含む、請求項12または13に記載の照明アセンブリ。
- 前記第1樹脂層は不純物が含まれない透光層からなり、
前記照明モジュールの厚さは、5.5mm以下であり、
前記複数の発光素子のそれぞれは、フリップチップタイプで前記基板上に配置され、
前記第2樹脂層における前記蛍光体の含有量は、23wt%以下であり、前記インク粒子の含有量は、3wt%~13wt%である、請求項12または13に記載の照明アセンブリ。
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