JP7431824B2 - スキャトロメトリオーバーレイ(scol)測定方法及びscol測定システム - Google Patents

スキャトロメトリオーバーレイ(scol)測定方法及びscol測定システム Download PDF

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Publication number
JP7431824B2
JP7431824B2 JP2021528965A JP2021528965A JP7431824B2 JP 7431824 B2 JP7431824 B2 JP 7431824B2 JP 2021528965 A JP2021528965 A JP 2021528965A JP 2021528965 A JP2021528965 A JP 2021528965A JP 7431824 B2 JP7431824 B2 JP 7431824B2
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Japan
Prior art keywords
scol
target
measurement
overlay
illumination
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JP2021528965A
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English (en)
Japanese (ja)
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JP2022507918A (ja
JP2022507918A5 (OSRAM
Inventor
アムノン マナッセン
ユーリ パスコヴァル
エラン アミット
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KLA Corp
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KLA Corp
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Priority claimed from PCT/US2019/045039 external-priority patent/WO2020106335A1/en
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Publication of JP2022507918A5 publication Critical patent/JP2022507918A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/0201—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal phase variation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2021528965A 2018-11-21 2019-08-05 スキャトロメトリオーバーレイ(scol)測定方法及びscol測定システム Active JP7431824B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862770680P 2018-11-21 2018-11-21
US62/770,680 2018-11-21
PCT/US2019/045039 WO2020106335A1 (en) 2018-11-21 2019-08-05 Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)

Publications (3)

Publication Number Publication Date
JP2022507918A JP2022507918A (ja) 2022-01-18
JP2022507918A5 JP2022507918A5 (OSRAM) 2022-08-15
JP7431824B2 true JP7431824B2 (ja) 2024-02-15

Family

ID=70727746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021528965A Active JP7431824B2 (ja) 2018-11-21 2019-08-05 スキャトロメトリオーバーレイ(scol)測定方法及びscol測定システム

Country Status (2)

Country Link
US (2) US11119417B2 (OSRAM)
JP (1) JP7431824B2 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
CN117120803A (zh) * 2021-03-30 2023-11-24 昂图创新有限公司 用于经验套刻测量的多层校准
US12386271B2 (en) * 2021-03-30 2025-08-12 Onto Innovation Inc. Multi-layer calibration for empirical overlay measurement
US11796925B2 (en) * 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2013504063A (ja) 2009-09-03 2013-02-04 ケーエルエー−テンカー・コーポレーション 計測システムおよび計測方法
US20150219449A1 (en) 2013-07-26 2015-08-06 Kla-Tencor Corporation Reflection symmetric scatterometry overlay targets and methods
US20170255738A1 (en) 2016-03-01 2017-09-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter
JP2018529952A (ja) 2015-09-09 2018-10-11 ケーエルエー−テンカー コーポレイション 補助電磁場の導入に基づく1次スキャトロメトリオーバーレイでの新たなアプローチ

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US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6813034B2 (en) 2002-02-05 2004-11-02 Therma-Wave, Inc. Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US8214771B2 (en) * 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
WO2014194095A1 (en) * 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
KR102548650B1 (ko) 2014-10-03 2023-06-27 케이엘에이 코포레이션 검증 계측 타겟 및 그 설계
SG11201703585RA (en) * 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
US10072921B2 (en) * 2014-12-05 2018-09-11 Kla-Tencor Corporation Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element
WO2017146785A1 (en) 2016-02-25 2017-08-31 Kla-Tencor Corporation Analyzing root causes of process variation in scatterometry metrology
WO2017157645A1 (en) * 2016-03-15 2017-09-21 Stichting Vu Inspection method, inspection apparatus and illumination method and apparatus
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
IL265585B (en) * 2016-09-27 2022-09-01 Asml Netherlands Bv Metrology recipe selection
US10732516B2 (en) 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
EP3454125A1 (en) * 2017-09-07 2019-03-13 ASML Netherlands B.V. A method of measuring a parameter and apparatus
EP3454124A1 (en) * 2017-09-07 2019-03-13 ASML Netherlands B.V. Method to determine a patterning process parameter
EP3470924A1 (en) * 2017-10-11 2019-04-17 ASML Netherlands B.V. Method of optimizing the position and/or size of a measurement illumination spot relative to a target on a substrate, and associated apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013504063A (ja) 2009-09-03 2013-02-04 ケーエルエー−テンカー・コーポレーション 計測システムおよび計測方法
US20150219449A1 (en) 2013-07-26 2015-08-06 Kla-Tencor Corporation Reflection symmetric scatterometry overlay targets and methods
JP2018529952A (ja) 2015-09-09 2018-10-11 ケーエルエー−テンカー コーポレイション 補助電磁場の導入に基づく1次スキャトロメトリオーバーレイでの新たなアプローチ
US20170255738A1 (en) 2016-03-01 2017-09-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter

Also Published As

Publication number Publication date
US20210373445A1 (en) 2021-12-02
US20200159129A1 (en) 2020-05-21
JP2022507918A (ja) 2022-01-18
US11119417B2 (en) 2021-09-14

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