JP7419676B2 - 電子部品の製造方法及び電子部品 - Google Patents
電子部品の製造方法及び電子部品 Download PDFInfo
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- JP7419676B2 JP7419676B2 JP2019104819A JP2019104819A JP7419676B2 JP 7419676 B2 JP7419676 B2 JP 7419676B2 JP 2019104819 A JP2019104819 A JP 2019104819A JP 2019104819 A JP2019104819 A JP 2019104819A JP 7419676 B2 JP7419676 B2 JP 7419676B2
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- Prior art keywords
- copper
- particles
- solder
- metal
- molded body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Wire Bonding (AREA)
- Powder Metallurgy (AREA)
Description
第1の工程では、準備工程に続いて、図1(b)に示すように、ポリマー成形体1上に銅ペーストを所定のパターンで(銅配線を形成する部分に)塗布して銅ペースト層2を形成する(形成工程)。銅ペーストは、例えば、スクリーン印刷、転写印刷、オフセット印刷、ジェットプリンティング法、ディスペンサー、ジェットディスペンサ、ニードルディスペンサ、カンマコータ、スリットコータ、ダイコータ、グラビアコータ、スリットコート、凸版印刷、凹版印刷、グラビア印刷、ステンシル印刷、ソフトリソグラフ、バーコート、アプリケータ、粒子堆積法、スプレーコータ、スピンコータ、ディップコータ、電着塗装等によって塗布される。
図1(c)に示すように、銅粒子を焼結させることにより、銅配線3を形成する。
銅配線3における銅の含有量(体積%)=[(M1)/8.96]×100 (A)
第2の工程に続いて、図1(d)に示すように、はんだ粒子4及び樹脂成分5を含有するはんだペーストを、銅配線3上に所定のパターンで塗布してはんだペースト層6を形成する。樹脂成分5の一部は、銅配線3の空隙部3aに浸透し、銅配線3の少なくとも一部に充填された樹脂充填部7を形成している。
第3の工程に続いて、図1(e)に示すように、はんだペースト層6の所定の位置に電極9を有する電子素子8を配置(マウント)する。電子素子8としては、ダイオード、整流器、サイリスタ、MOSゲートドライバ、パワースイッチ、パワーMOSFET、IGBT、ショットキーダイオード、ファーストリカバリダイオード等からなるパワーモジュール、発信機、増幅器、LEDモジュール、コンデンサ、ジャイロセンサ等が挙げられる。
第4の工程に続いて、図1(f)に示すように、はんだ粒子4を溶融することで、はんだ層11を形成し、銅配線3と電子素子8の電極9とを接合する。これにより、電子部品100が得られる。
(銅ペースト1)
水酸化銅(関東化学株式会社、特級)91.5g(0.94mol)に1-プロパノール(関東化学株式会社、特級)150mLを加えて撹拌し、これにノナン酸(関東化学株式会社、純度90%以上)370.9g(2.34mol)を加えた。得られた混合物を、セパラブルフラスコ中で、90℃で30分間加熱撹拌した。得られた溶液を加熱したままろ過して未溶解物を除去した。その後放冷し、生成したノナン酸銅を吸引ろ過し、洗浄液が透明になるまでヘキサンで洗浄した。得られた粉体を50℃の防爆オーブンで3時間乾燥してノナン酸銅(II)を得た。収量は340g(収率96質量%)であった。
固形物をヘキサン15mLで洗浄する工程を3回繰り返し、酸残渣を除去して、銅光沢を有する球状の銅粒子の粉体(銅粒子A、第2の銅粒子)を得た。
フレーク状の銅粒子Bである1100-YPに代えて、1200-YP(商品名、三井金属鉱業株式会社製、50%体積平均粒径3.1μm、最大径が1.0μm以上20μm以下の銅粒子の含有量100質量%)を用いたこと以外は銅ペースト1と同様にして、銅ペースト2を得た。
フレーク状の銅粒子Bである1100-YPに代えて、MA-C025KFD(商品名、三井金属鉱業株式会社製、50%体積平均粒径4.7μm、最大径が1.0μm以上20μm以下の銅粒子の含有量100質量%)を用いたこと以外は銅ペースト1と同様にして、銅ペースト3を得た。
フレーク状の銅粒子Bである1100-YPに代えて、MA―C08JF(商品名、三井金属鉱業株式会社製、50%体積平均粒径11.9μm、最大径が1.0μm以上20μm以下の銅粒子の含有量100質量%)を用いたこと以外は銅ペースト1と同様にして、銅ペースト4を得た。
(実施例1)
<ポリマー成形体の準備>
ポリマー成形体として、ポリプロピレン(商品名:成形用PP P-2127、積水成型工業株式会社製)により構成される平面基板状のポリプロピレン樹脂板(大きさ80mm×40mm、厚さ3mm)を準備した。
図7に示すように、ポリプロピレン樹脂板(ポリマー成形体)40上に、スクリューディスペンサー(武蔵エンジニアリング株式会社製)を用いて、幅が1mm、長さが5cmの配線41と5mm角の端子42の形状になるように、銅ペースト1を塗布により配置した。これにより、銅ペースト層付きポリプロピレン樹脂板を得た。
上記で得られた銅ペースト層付きポリプロピレン樹脂板を、ギ酸還元炉(アユミ工業社製)にセットした。100℃で30分間、ギ酸中で保持することで、銅粒子の焼結体により構成される配線(銅配線)を作製した。なお、配線中の銅含有量が80体積%であり、焼結後の配線の厚さは、50μmであった。
配線(銅配線)が設けられたポリプロピレン樹脂板の表面前面を覆うように、感光性液状ソルダーレジスト(商品名:SR7300、日立化成株式会社製)をスクリーン印刷により塗布し、80℃で20分間乾燥を行った。5mm角の端子42部以外を、露光装置(UX-5シリーズ、ウシオ電気株式会社製)により露光(露光量:300mJ/cm2)し、1質量%Na2CO3溶液により、現像を行い5mm角の端子42を露出させた。その後、露光装置(UX-5シリーズ、ウシオ電気株式会社製)により露光(露光量:2J/cm2)した。こうして、銅配線付きポリプロピレン樹脂板を得た。
初期導通性を、配線の体積抵抗率(単位:μΩ・cm)に基づき評価した。体積抵抗率は、銅配線付きポリプロピレン樹脂板の配線について、4端針面抵抗測定器で測定した面抵抗値と、非接触表面・層断面形状計測システム(VertScan、株式会社菱化システム)で求めた配線の層厚とから計算した。
上記で得られた銅配線付きポリプロピレン樹脂板を用い、温度サイクル試験後における導通信頼性の評価を行った。なお、温度サイクル試験には、冷熱衝撃装置(エスペック製、TSA-73ES)を用い、最低温度-40℃/最高温度+100℃を各30分繰り返し、100、500、1000、2000、3000サイクル試験後の導通信頼性を調べた。導通信頼性は、配線の体積抵抗率(単位:μΩ・cm)により評価した。具体的には、温度サイクル試験後の銅配線付きポリプロピレン樹脂板について、20個ずつ測定を行い、以下の基準により評価した。
A:平均体積抵抗率が、5μΩ・cm未満
B:平均体積抵抗率が、5μΩ・cm以上20μΩ・cm未満
C:平均体積抵抗率が、20μΩ・cm以上50μΩ・cm未満
D:平均体積抵抗率が、50μΩ・cm以上100μΩ・cm未満
E:平均体積抵抗率が、100μΩ・cm以上
銅ペースト1に代えて銅ペースト2を用いたこと以外は実施例1と同様にして、銅配線付きポリプロピレン樹脂板を作製し、初期導通性及び導通信頼性の評価を行った。
銅ペースト1に代えて銅ペースト3を用いたこと以外は実施例1と同様にして、銅配線付きポリプロピレン樹脂板を作製し、初期導通性及び導通信頼性の評価を行った。
銅ペースト1に代えて銅ペースト4を用いたこと以外は実施例1と同様にして、銅配線付きポリプロピレン樹脂板を作製し、初期導通性及び導通信頼性の評価を行った。
ポリマー成形体として、ポリプロピレンにより構成される平面基板状のポリマー成形体ポリプロピレンの代わりに、ABS樹脂により構成される平面基板状のABS樹脂板(大きさ80mm×40mm、厚さ3mm)を用い、焼結温度を100℃から85℃に変更したこと以外は実施例1と同様にして、銅配線付きABS樹脂板を作製し、初期導通性及び導通信頼性の評価を行った。
ポリマー成形体として、ポリプロピレンにより構成される平面基板状のポリマー成形体ポリプロピレンの代わりに、ABS樹脂により構成される平面基板状のABS樹脂板(大きさ80mm×40mm、厚さ3mm)を用い、銅ペースト1に代えて銅ペースト2を用い、焼結温度を100℃から85℃に変更したこと以外は実施例1と同様にして、銅配線付きABS樹脂板を作製し、初期導通性及び導通信頼性の評価を行った。
ポリマー成形体として、ポリプロピレンにより構成される平面基板状のポリマー成形体ポリプロピレンの代わりに、ABS樹脂により構成される平面基板状のABS樹脂板(大きさ80mm×40mm、厚さ3mm)を用い、銅ペースト1に代えて銅ペースト3を用い、焼結温度を100℃から85℃に変更したこと以外は実施例1と同様にして、銅配線付きABS樹脂板を作製し、初期導通性及び導通信頼性の評価を行った。
ポリマー成形体として、ポリプロピレンにより構成される平面基板状のポリマー成形体ポリプロピレンの代わりに、ABS樹脂により構成される平面基板状のABS樹脂板(大きさ80mm×40mm、厚さ3mm)を用い、銅ペースト1に代えて銅ペースト4を用い、焼結温度を100℃から85℃に変更したこと以外は実施例1と同様にして、銅配線付きABS樹脂板を作製し、初期導通性及び導通信頼性の評価を行った。
ポリマー成形体として、ポリカーボネートにより構成される平面基板状のポリカーボネート樹脂板(大きさ80mm×40mm、厚さ3mm)を準備した。
ポリマー成形体として、実施例1と同様に、ポリプロピレンにより構成される平面基板状のポリプロピレン樹脂板(大きさ80mm×40mm、厚さ3mm)を準備し、これを80℃に加温したキシレンに10分間浸漬して、大気中で10分間乾燥させた。更に、80℃で加熱処理を施して、キシレン含有率が3質量%であるポリプロピレン樹脂板を得た。
硫酸ニッケル・6水和物 25g/L
グリシン 8g/L
硫酸アンモニウム 25g/L
無水クエン酸 20g/L
次亜リン酸ナトリウム・一水和物 20g/L
ビスマス 1ppm
チオ硫酸ナトリウム 2ppm
浴温:45℃、pH:8.0
ポリマー成形体として、実施例5と同様に、ABS樹脂からなる平面基板状のABS樹脂板(大きさ80mm×40mm、厚さ3mm)を準備し、以下のプリエッチング工程、アルカリ処理工程、プレディップ工程、触媒処理工程、活性化処理工程、めっき処理工程を行った。なお、プリエッチング工程前に表面改質部以外をポリイミドテープにより被覆し、めっき処理工程前にポリイミドテープを剥がすことで、実施例1における銅ペーストのパターンと同様の形状のめっき被膜を得た。
600g/LのN,N-ジメチルホルムアミド(DMF)と200g/Lのエチレングリコールを含む溶液を準備し、ABS樹脂板を30℃で5分間浸漬した。次に、浸漬後のABS樹脂板を70℃で2時間の加熱条件で加熱処理を行った。加熱処理工程後、30ppm、20℃、8分間、ABS樹脂板をオゾン水に浸漬させた。
NaOHを50g/Lとラウリル硫酸ナトリウムを1g/L溶解した混合水溶液を準備し、この溶液中に、プリエッチング工程を経たABS樹脂板を50℃で3分間浸漬した。
アルカリ処理工程を経たABS樹脂板を35質量%の塩酸に室温で1分間浸漬した。
3N塩酸水溶液に塩化パラジウムを0.1質量%及び塩化錫を5質量%溶解して触媒溶液を調製した。35℃に加熱された触媒溶液中に、プレディップ工程を経たABS樹脂板を4分間浸漬した。
次いで、パラジウムを活性化するために、触媒処理工程を経たABS樹脂板を35質量%の塩酸に室温で4分間浸漬した。
活性化処理したABS樹脂板に、比較例1と同様の無電解Niめっき浴組成及びめっき条件で、厚さ0.2μmの無電解Niめっき被膜の形成を行い、無電解Niめっき被膜付きABS樹脂板を得た。なお、表面改質された部分に選択的に無電解Niめっき被膜が析出することで、実施例1の銅ペースト層と同様の形状で無電解Niめっき被膜が形成された。その後、硫酸銅めっき液を用いて電解銅めっきを行い、厚み20μmの銅配線を形成した。
Claims (12)
- ポリマー成形体に、金属粒子を含有する金属ペーストを所定のパターンで塗布して金属ペースト層を形成する第1の工程と、
前記金属粒子を焼結させることにより、金属配線を形成する第2の工程と、
前記金属配線上に、はんだ粒子と樹脂成分とを含むはんだペーストを塗布してはんだペースト層を形成する第3の工程と、
前記はんだペースト層上に電子素子を配置する第4の工程と、
前記はんだペースト層を加熱して、前記金属配線と前記電子素子とを接合するはんだ層を形成すると共に、前記はんだ層の少なくとも一部を被覆する樹脂層を形成する第5の工程と、
を備え、
前記ポリマー成形体が、融点280℃以下の結晶性プラスチック又はガラス転移温度160℃以下の非晶性プラスチックの成形体であり、
前記金属ペーストが、体積平均粒径が1.0μm以上50μm以下であるフレーク状の第1の銅粒子と、体積平均粒径が0.005μm以上0.8μm以下である第2の銅粒子と、を含有し、
前記第2の銅粒子の含有量が、前記第1の銅粒子の質量及び前記第2の銅粒子の質量の合計を基準として、30質量%以上85質量%以下である、電子部品の製造方法。 - 前記第3の工程において、前記金属配線の少なくとも一部が露出するようにソルダーレジストを形成し、前記金属配線の露出部分上に、前記はんだペーストを塗布してはんだペースト層を形成する、請求項1に記載の電子部品の製造方法。
- ポリマー成形体に、金属粒子を含有する金属ペーストを所定のパターンで塗布して金属ペースト層を形成する第1の工程と、
前記金属粒子を焼結させることにより、金属配線を形成する第2の工程と、
前記金属配線上に、樹脂成分を含む樹脂組成物を塗布し、樹脂層を形成する第3の工程と、
前記金属配線の少なくとも一部が露出するように前記樹脂層を除去する第4の工程と、
前記金属配線の露出部分上に、はんだ粒子を含むはんだペーストを塗布してはんだペースト層を形成する第5の工程と、
前記はんだペースト層上に電子素子を配置する第6の工程と、
前記はんだペースト層を加熱して、前記金属配線と前記電子素子とを接合するはんだ層を形成する第7の工程と、
を備え、
前記ポリマー成形体が、融点280℃以下の結晶性プラスチック又はガラス転移温度160℃以下の非晶性プラスチックの成形体であり、
前記金属ペーストが、体積平均粒径が1.0μm以上50μm以下であるフレーク状の第1の銅粒子と、体積平均粒径が0.005μm以上0.8μm以下である第2の銅粒子と、を含有し、
前記第2の銅粒子の含有量が、前記第1の銅粒子の質量及び前記第2の銅粒子の質量の合計を基準として、30質量%以上85質量%以下である、電子部品の製造方法。 - 前記はんだペーストが樹脂成分を更に含有し、前記第7の工程において前記はんだ層と当該はんだ層の少なくとも一部を被覆する樹脂層とを形成する、請求項3に記載の電子部品の製造方法。
- ポリマー成形体に、金属粒子を含有する金属ペーストを所定のパターンで塗布して金属ペースト層を形成する第1の工程と、
前記金属粒子を焼結させることにより、金属配線を形成する第2の工程と、
前記金属配線上に、はんだ粒子を含むはんだペーストを塗布してはんだペースト層を形成する第3の工程と、
前記はんだペースト層上に電子素子を配置する第4の工程と、
前記はんだペースト層を加熱して、前記金属配線と前記電子素子とを接合するはんだ層を形成する第5の工程と、
前記ポリマー成形体と、前記金属配線及び前記はんだ層を介して前記ポリマー成形体に接続された前記電子素子との間に、硬化性樹脂成分を含有する封止材を含浸し、硬化する第6の工程と、
を備え、
前記ポリマー成形体が、融点280℃以下の結晶性プラスチック又はガラス転移温度160℃以下の非晶性プラスチックの成形体であり、
前記金属ペーストが、体積平均粒径が1.0μm以上50μm以下であるフレーク状の第1の銅粒子と、体積平均粒径が0.005μm以上0.8μm以下である第2の銅粒子と、を含有し、
前記第2の銅粒子の含有量が、前記第1の銅粒子の質量及び前記第2の銅粒子の質量の合計を基準として、30質量%以上85質量%以下である、電子部品の製造方法。 - 前記ポリマー成形体が、ポリプロピレン、ABS樹脂、又はポリカーボネートを含有する、請求項1~5のいずれか一項に記載の電子部品の製造方法。
- レーザ照射又はギ酸が含まれる雰囲気下で120℃以下の加熱によって前記金属粒子を焼結させて、前記金属配線を形成する、請求項1~6のいずれか一項に記載の電子部品の製造方法。
- 前記第2の工程で形成される金属配線における銅の含有量が、金属配線の全体積を基準として、65体積%以上95体積%以下である、請求項1~7のいずれか一項に記載の電子部品の製造方法。
- 前記金属配線の厚みが10μm以上である、請求項1~8のいずれか一項に記載の電子部品の製造方法。
- ポリマー成形体と、
前記ポリマー成形体上に設けられ、金属粒子の焼結体により構成される金属配線と、
前記金属配線上に配置された電子素子と、
前記金属配線と前記電子素子とを接合するはんだ層と、
を備え、
前記ポリマー成形体が、融点280℃以下の結晶性プラスチック又はガラス転移温度160℃以下の非晶性プラスチックの成形体であり、
前記金属粒子が、体積平均粒径が1.0μm以上50μm以下であるフレーク状の第1の銅粒子と、体積平均粒径が0.005μm以上0.8μm以下である第2の銅粒子と、を含有し、前記第2の銅粒子の含有量が、前記第1の銅粒子の質量及び前記第2の銅粒子の質量の合計を基準として、30質量%以上85質量%以下であり、
前記金属配線が空隙を有し、当該空隙に樹脂成分が充填されており、
前記金属配線が前記ポリマー成形体と前記金属配線との接合面に対して略平行に配向したフレーク状の前記第1の銅粒子に由来する構造を含む、電子部品。 - 前記はんだ層の少なくとも一部を被覆する樹脂層を更に備える、請求項10に記載の電子部品。
- 前記金属配線の厚みが10μm以上である、請求項10又は11に記載の電子部品。
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