JP7419288B2 - 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法 - Google Patents

制御装置、成膜装置、制御方法、及び電子デバイスの製造方法 Download PDF

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Publication number
JP7419288B2
JP7419288B2 JP2021058452A JP2021058452A JP7419288B2 JP 7419288 B2 JP7419288 B2 JP 7419288B2 JP 2021058452 A JP2021058452 A JP 2021058452A JP 2021058452 A JP2021058452 A JP 2021058452A JP 7419288 B2 JP7419288 B2 JP 7419288B2
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Japan
Prior art keywords
voltage
substrate
electrostatic chuck
film forming
voltage supply
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JP2021058452A
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English (en)
Japanese (ja)
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JP2022155113A (ja
Inventor
毅 滝沢
奉代 川畑
慈 河合
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2021058452A priority Critical patent/JP7419288B2/ja
Priority to CN202210286083.XA priority patent/CN115148628A/zh
Priority to KR1020220035959A priority patent/KR102686371B1/ko
Publication of JP2022155113A publication Critical patent/JP2022155113A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2605—Measuring capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Automation & Control Theory (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021058452A 2021-03-30 2021-03-30 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法 Active JP7419288B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021058452A JP7419288B2 (ja) 2021-03-30 2021-03-30 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法
CN202210286083.XA CN115148628A (zh) 2021-03-30 2022-03-22 控制装置、成膜装置、控制方法及电子器件的制造方法
KR1020220035959A KR102686371B1 (ko) 2021-03-30 2022-03-23 제어 장치, 성막 장치, 제어 방법, 및 전자 디바이스의 제조 방법

Applications Claiming Priority (1)

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JP2021058452A JP7419288B2 (ja) 2021-03-30 2021-03-30 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法

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JP2022155113A JP2022155113A (ja) 2022-10-13
JP7419288B2 true JP7419288B2 (ja) 2024-01-22

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KR (1) KR102686371B1 (zh)
CN (1) CN115148628A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024143060A (ja) * 2023-03-30 2024-10-11 キヤノントッキ株式会社 アライメント方法およびアライメント装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228440A (ja) 1999-02-04 2000-08-15 Nissin Electric Co Ltd 監視回路付基板保持装置
JP2001298073A (ja) 2000-01-21 2001-10-26 Applied Materials Inc 静電チャックからワークピースをデチャックするための方法及び装置
JP2006202939A (ja) 2005-01-20 2006-08-03 Mitsubishi Heavy Ind Ltd 吸着方法、脱離方法、プラズマ処理方法、静電チャック及びプラズマ処理装置
JP2007251083A (ja) 2006-03-20 2007-09-27 Mitsubishi Heavy Ind Ltd ガラス基板の静電吸着装置及びその吸着離脱方法
US20080218931A1 (en) 2007-03-09 2008-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
JP2017195351A (ja) 2016-04-23 2017-10-26 株式会社クリエイティブテクノロジー 静電チャック
JP2019117926A (ja) 2017-12-27 2019-07-18 キヤノントッキ株式会社 静電チャック、成膜装置、基板吸着方法、基板剥離方法、成膜方法、及び電子デバイスの製造方法
JP2019125603A (ja) 2018-01-11 2019-07-25 株式会社アルバック 吸着方法
JP7211768B2 (ja) 2018-11-01 2023-01-24 アズビル株式会社 箱体のヒンジ構造

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211768A (ja) * 1994-01-13 1995-08-11 Hitachi Ltd 静電吸着装置の保持状態確認方法
JP2014075398A (ja) * 2012-10-03 2014-04-24 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
US10804821B2 (en) * 2016-11-04 2020-10-13 Advanced Ion Beam Technology, Inc. Apparatus and method for monitoring the relative relationship between the wafer and the chuck
KR20200049034A (ko) 2018-10-31 2020-05-08 캐논 톡키 가부시키가이샤 얼라인먼트 시스템, 성막 장치, 얼라인먼트 방법, 성막 방법 및 전자 디바이스의 제조 방법

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228440A (ja) 1999-02-04 2000-08-15 Nissin Electric Co Ltd 監視回路付基板保持装置
JP2001298073A (ja) 2000-01-21 2001-10-26 Applied Materials Inc 静電チャックからワークピースをデチャックするための方法及び装置
JP2006202939A (ja) 2005-01-20 2006-08-03 Mitsubishi Heavy Ind Ltd 吸着方法、脱離方法、プラズマ処理方法、静電チャック及びプラズマ処理装置
JP2007251083A (ja) 2006-03-20 2007-09-27 Mitsubishi Heavy Ind Ltd ガラス基板の静電吸着装置及びその吸着離脱方法
US20080218931A1 (en) 2007-03-09 2008-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
JP2017195351A (ja) 2016-04-23 2017-10-26 株式会社クリエイティブテクノロジー 静電チャック
JP2019117926A (ja) 2017-12-27 2019-07-18 キヤノントッキ株式会社 静電チャック、成膜装置、基板吸着方法、基板剥離方法、成膜方法、及び電子デバイスの製造方法
JP2019125603A (ja) 2018-01-11 2019-07-25 株式会社アルバック 吸着方法
JP7211768B2 (ja) 2018-11-01 2023-01-24 アズビル株式会社 箱体のヒンジ構造

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CN115148628A (zh) 2022-10-04
KR102686371B1 (ko) 2024-07-19
KR20220136158A (ko) 2022-10-07
JP2022155113A (ja) 2022-10-13

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