JP7417627B2 - ダイヤモンドフィルムのトライボロジー特性の改善 - Google Patents

ダイヤモンドフィルムのトライボロジー特性の改善 Download PDF

Info

Publication number
JP7417627B2
JP7417627B2 JP2021560930A JP2021560930A JP7417627B2 JP 7417627 B2 JP7417627 B2 JP 7417627B2 JP 2021560930 A JP2021560930 A JP 2021560930A JP 2021560930 A JP2021560930 A JP 2021560930A JP 7417627 B2 JP7417627 B2 JP 7417627B2
Authority
JP
Japan
Prior art keywords
nanocrystalline diamond
layer
substrate
diamond layer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021560930A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022549044A5 (https=
JPWO2022046448A5 (https=
JP2022549044A (ja
Inventor
ビクネシュ サムガナサン，
ジテン グ，
エスワラナンド ベンカタサブラマニアン，
キアン ピン ロー，
アブヒジット バス マリック，
ジョン スディジョノ，
チョンシン チェン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2022549044A publication Critical patent/JP2022549044A/ja
Publication of JP2022549044A5 publication Critical patent/JP2022549044A5/ja
Publication of JPWO2022046448A5 publication Critical patent/JPWO2022046448A5/ja
Priority to JP2023161812A priority Critical patent/JP2024012282A/ja
Application granted granted Critical
Publication of JP7417627B2 publication Critical patent/JP7417627B2/ja
Priority to JP2025086973A priority patent/JP2025138631A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021560930A 2020-08-31 2021-08-16 ダイヤモンドフィルムのトライボロジー特性の改善 Active JP7417627B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023161812A JP2024012282A (ja) 2020-08-31 2023-09-26 ダイヤモンドフィルムのトライボロジー特性の改善
JP2025086973A JP2025138631A (ja) 2020-08-31 2025-05-26 ダイヤモンドフィルムのトライボロジー特性の改善

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/007,441 US11594416B2 (en) 2020-08-31 2020-08-31 Tribological properties of diamond films
US17/007,441 2020-08-31
PCT/US2021/046095 WO2022046448A1 (en) 2020-08-31 2021-08-16 Improving tribological properties of diamond films

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023161812A Division JP2024012282A (ja) 2020-08-31 2023-09-26 ダイヤモンドフィルムのトライボロジー特性の改善

Publications (4)

Publication Number Publication Date
JP2022549044A JP2022549044A (ja) 2022-11-24
JP2022549044A5 JP2022549044A5 (https=) 2023-04-14
JPWO2022046448A5 JPWO2022046448A5 (https=) 2023-04-14
JP7417627B2 true JP7417627B2 (ja) 2024-01-18

Family

ID=80353808

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021560930A Active JP7417627B2 (ja) 2020-08-31 2021-08-16 ダイヤモンドフィルムのトライボロジー特性の改善
JP2023161812A Pending JP2024012282A (ja) 2020-08-31 2023-09-26 ダイヤモンドフィルムのトライボロジー特性の改善
JP2025086973A Pending JP2025138631A (ja) 2020-08-31 2025-05-26 ダイヤモンドフィルムのトライボロジー特性の改善

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023161812A Pending JP2024012282A (ja) 2020-08-31 2023-09-26 ダイヤモンドフィルムのトライボロジー特性の改善
JP2025086973A Pending JP2025138631A (ja) 2020-08-31 2025-05-26 ダイヤモンドフィルムのトライボロジー特性の改善

Country Status (4)

Country Link
US (2) US11594416B2 (https=)
JP (3) JP7417627B2 (https=)
CN (1) CN114503241B (https=)
WO (1) WO2022046448A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11594416B2 (en) * 2020-08-31 2023-02-28 Applied Materials, Inc. Tribological properties of diamond films
US12148617B2 (en) * 2021-11-01 2024-11-19 International Business Machines Corporation Structure and method to pattern pitch lines
US12442104B2 (en) 2023-04-20 2025-10-14 Applied Materials, Inc. Nanocrystalline diamond with amorphous interfacial layer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170269263A1 (en) 2016-03-16 2017-09-21 Adam Khan Diamond coated antireflective window system and method
JP2017533580A (ja) 2014-09-03 2017-11-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ３ｄ ｎａｎｄハードマスク用途向けナノ結晶ダイヤモンド炭素膜
JP2017534750A (ja) 2014-08-22 2017-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高密度高Ｓｐ３含有層を実現するための高電力インパルスマグネトロンスパッタリング処理
JP2017226593A (ja) 2016-03-08 2017-12-28 トゥー‐シックス・インコーポレイテッド シリコン層、及び、光学的に仕上げられた（又は密集した）シリコン‐ダイヤモンド界面を有するダイヤモンド層を含む基板

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2554100B2 (ja) * 1987-09-10 1996-11-13 三菱重工業株式会社 ダイヤモンド皮膜の研磨方法
JP4018856B2 (ja) * 1999-11-22 2007-12-05 京セラ株式会社 真空チャンバー構成部材
US7079740B2 (en) 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
DE102004025669A1 (de) * 2004-05-21 2005-12-15 Diaccon Gmbh Funktionelle CVD-Diamantschichten auf großflächigen Substraten
JP5341774B2 (ja) * 2007-01-22 2013-11-13 エレメント シックス リミテッド ダイヤモンド表面のプラズマエッチング
US20090017258A1 (en) 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
US8007910B2 (en) 2007-07-19 2011-08-30 City University Of Hong Kong Ultrahard multilayer coating comprising nanocrystalline diamond and nanocrystalline cubic boron nitride
CN100575545C (zh) * 2008-05-19 2009-12-30 牡丹江师范学院 低成本生长高品质纳米金刚石膜的方法
US8460464B2 (en) * 2009-03-31 2013-06-11 Rajneesh Bhandari Method for producing single crystalline diamonds
US9449982B2 (en) * 2013-03-12 2016-09-20 Sandisk Technologies Llc Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks
EP2832899A1 (fr) 2013-08-02 2015-02-04 The Swatch Group Research and Development Ltd. Revêtement de diamant et procédé de dépôt d'un tel revêtement
US9382625B2 (en) * 2014-05-01 2016-07-05 Applied Materials, Inc. Remote plasma source based cyclic CVD process for nanocrystalline diamond deposition
US10662523B2 (en) * 2015-05-27 2020-05-26 John Crane Inc. Extreme durability composite diamond film
KR101865476B1 (ko) * 2016-10-28 2018-06-07 고려대학교 산학협력단 나노 다이아몬드를 계면 층으로 적용한 다이아몬드상 탄소막의 제조방법 및 이에 의해 제조된 다이아몬드상 탄소막
CN108060407B (zh) * 2017-11-09 2021-08-06 上海交通大学 一种微纳多层复合金刚石薄膜的制备方法
US11594416B2 (en) * 2020-08-31 2023-02-28 Applied Materials, Inc. Tribological properties of diamond films

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017534750A (ja) 2014-08-22 2017-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高密度高Ｓｐ３含有層を実現するための高電力インパルスマグネトロンスパッタリング処理
JP2017533580A (ja) 2014-09-03 2017-11-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ３ｄ ｎａｎｄハードマスク用途向けナノ結晶ダイヤモンド炭素膜
JP2017226593A (ja) 2016-03-08 2017-12-28 トゥー‐シックス・インコーポレイテッド シリコン層、及び、光学的に仕上げられた（又は密集した）シリコン‐ダイヤモンド界面を有するダイヤモンド層を含む基板
US20170269263A1 (en) 2016-03-16 2017-09-21 Adam Khan Diamond coated antireflective window system and method

Also Published As

Publication number Publication date
US11594416B2 (en) 2023-02-28
US20220068643A1 (en) 2022-03-03
US11894230B2 (en) 2024-02-06
JP2025138631A (ja) 2025-09-25
CN114503241A (zh) 2022-05-13
WO2022046448A1 (en) 2022-03-03
JP2024012282A (ja) 2024-01-30
JP2022549044A (ja) 2022-11-24
CN114503241B (zh) 2025-10-31
US20230170217A1 (en) 2023-06-01

Similar Documents

Publication Publication Date Title
US10954129B2 (en) Diamond-like carbon as mandrel
KR101821800B1 (ko) 3d nand 하드마스크 애플리케이션을 위한 나노결정질 다이아몬드 탄소 필름
CN108475640B (zh) 用于侧向硬模凹槽减小的混合碳硬模
JP7229929B2 (ja) ハードマスク応用向けのホウ素がドープされた炭化タングステン
US11894230B2 (en) Tribological properties of diamond films
KR20180029925A (ko) 스페이서 및 하드마스크 애플리케이션을 위한 실란 및 알킬실란 종으로부터의 보란 매개 탈수소화 프로세스
JP7441244B2 (ja) 低い粗さのダイヤモンドフィルムの堆積
JP7776660B2 (ja) ナノ結晶ダイヤモンド膜堆積のためのインシトゥ核形成
JP7802935B2 (ja) ダイヤモンド膜堆積のための気相前駆体シーディング
TW202422701A (zh) 高深寬比接點(harc)蝕刻
TWI917845B (zh) 在具有不同鍺濃度的含矽和鍺的材料之間進行的選擇性蝕刻
TW202509301A (zh) 具有非晶界面層的奈米晶體鑽石
TW202605904A (zh) 低k材料之自限蝕刻

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220715

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230117

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20230405

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230627

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230926

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20231219

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240105

R150 Certificate of patent or registration of utility model

Ref document number: 7417627

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150