CN114503241B - 改进金刚石膜的摩擦学特性 - Google Patents

改进金刚石膜的摩擦学特性

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Publication number
CN114503241B
CN114503241B CN202180002988.3A CN202180002988A CN114503241B CN 114503241 B CN114503241 B CN 114503241B CN 202180002988 A CN202180002988 A CN 202180002988A CN 114503241 B CN114503241 B CN 114503241B
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CN
China
Prior art keywords
nanocrystalline diamond
layer
diamond layer
substrate
torr
Prior art date
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Active
Application number
CN202180002988.3A
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English (en)
Chinese (zh)
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CN114503241A (zh
Inventor
维克内什·萨穆加纳坦
顾继腾
E·文卡塔苏布拉曼尼亚
罗建平
阿布海杰特·巴苏·马利克
约翰·苏迪约诺
陈中兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National University of Singapore
Applied Materials Inc
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National University of Singapore
Applied Materials Inc
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202180002988.3A 2020-08-31 2021-08-16 改进金刚石膜的摩擦学特性 Active CN114503241B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/007,441 US11594416B2 (en) 2020-08-31 2020-08-31 Tribological properties of diamond films
US17/007,441 2020-08-31
PCT/US2021/046095 WO2022046448A1 (en) 2020-08-31 2021-08-16 Improving tribological properties of diamond films

Publications (2)

Publication Number Publication Date
CN114503241A CN114503241A (zh) 2022-05-13
CN114503241B true CN114503241B (zh) 2025-10-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180002988.3A Active CN114503241B (zh) 2020-08-31 2021-08-16 改进金刚石膜的摩擦学特性

Country Status (4)

Country Link
US (2) US11594416B2 (https=)
JP (3) JP7417627B2 (https=)
CN (1) CN114503241B (https=)
WO (1) WO2022046448A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11594416B2 (en) * 2020-08-31 2023-02-28 Applied Materials, Inc. Tribological properties of diamond films
US12148617B2 (en) * 2021-11-01 2024-11-19 International Business Machines Corporation Structure and method to pattern pitch lines
US12442104B2 (en) 2023-04-20 2025-10-14 Applied Materials, Inc. Nanocrystalline diamond with amorphous interfacial layer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6468484A (en) * 1987-09-10 1989-03-14 Mitsubishi Heavy Ind Ltd Method for polishing diamond film
CN106796883A (zh) * 2014-09-03 2017-05-31 应用材料公司 用于三维nand硬膜应用的纳米结晶金刚石碳膜
KR20180046548A (ko) * 2016-10-28 2018-05-09 고려대학교 산학협력단 나노 다이아몬드를 계면 층으로 적용한 다이아몬드상 탄소막의 제조방법 및 이에 의해 제조된 다이아몬드상 탄소막
CN108060407A (zh) * 2017-11-09 2018-05-22 上海交通大学 一种微纳多层复合金刚石薄膜的制备方法

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JP4018856B2 (ja) * 1999-11-22 2007-12-05 京セラ株式会社 真空チャンバー構成部材
US7079740B2 (en) 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
DE102004025669A1 (de) * 2004-05-21 2005-12-15 Diaccon Gmbh Funktionelle CVD-Diamantschichten auf großflächigen Substraten
JP5341774B2 (ja) * 2007-01-22 2013-11-13 エレメント シックス リミテッド ダイヤモンド表面のプラズマエッチング
US20090017258A1 (en) 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
US8007910B2 (en) 2007-07-19 2011-08-30 City University Of Hong Kong Ultrahard multilayer coating comprising nanocrystalline diamond and nanocrystalline cubic boron nitride
CN100575545C (zh) * 2008-05-19 2009-12-30 牡丹江师范学院 低成本生长高品质纳米金刚石膜的方法
US8460464B2 (en) * 2009-03-31 2013-06-11 Rajneesh Bhandari Method for producing single crystalline diamonds
US9449982B2 (en) * 2013-03-12 2016-09-20 Sandisk Technologies Llc Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks
EP2832899A1 (fr) 2013-08-02 2015-02-04 The Swatch Group Research and Development Ltd. Revêtement de diamant et procédé de dépôt d'un tel revêtement
US9382625B2 (en) * 2014-05-01 2016-07-05 Applied Materials, Inc. Remote plasma source based cyclic CVD process for nanocrystalline diamond deposition
US9695503B2 (en) 2014-08-22 2017-07-04 Applied Materials, Inc. High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer
US10662523B2 (en) * 2015-05-27 2020-05-26 John Crane Inc. Extreme durability composite diamond film
US10584412B2 (en) 2016-03-08 2020-03-10 Ii-Vi Delaware, Inc. Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
US10254445B2 (en) 2016-03-16 2019-04-09 Adam Khan Diamond coated antireflective window system and method
US11594416B2 (en) * 2020-08-31 2023-02-28 Applied Materials, Inc. Tribological properties of diamond films

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6468484A (en) * 1987-09-10 1989-03-14 Mitsubishi Heavy Ind Ltd Method for polishing diamond film
CN106796883A (zh) * 2014-09-03 2017-05-31 应用材料公司 用于三维nand硬膜应用的纳米结晶金刚石碳膜
KR20180046548A (ko) * 2016-10-28 2018-05-09 고려대학교 산학협력단 나노 다이아몬드를 계면 층으로 적용한 다이아몬드상 탄소막의 제조방법 및 이에 의해 제조된 다이아몬드상 탄소막
CN108060407A (zh) * 2017-11-09 2018-05-22 上海交通大学 一种微纳多层复合金刚石薄膜的制备方法

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* Cited by examiner, † Cited by third party
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纳米金刚石薄膜的微结构和残余应力;徐锋;左敦稳;卢文壮;张海余;王珉;;金属学报;20080111(第01期);74-78 *

Also Published As

Publication number Publication date
US11594416B2 (en) 2023-02-28
US20220068643A1 (en) 2022-03-03
US11894230B2 (en) 2024-02-06
JP2025138631A (ja) 2025-09-25
CN114503241A (zh) 2022-05-13
WO2022046448A1 (en) 2022-03-03
JP7417627B2 (ja) 2024-01-18
JP2024012282A (ja) 2024-01-30
JP2022549044A (ja) 2022-11-24
US20230170217A1 (en) 2023-06-01

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