JP7396496B2 - 恒温槽型圧電発振器 - Google Patents
恒温槽型圧電発振器 Download PDFInfo
- Publication number
- JP7396496B2 JP7396496B2 JP2022539588A JP2022539588A JP7396496B2 JP 7396496 B2 JP7396496 B2 JP 7396496B2 JP 2022539588 A JP2022539588 A JP 2022539588A JP 2022539588 A JP2022539588 A JP 2022539588A JP 7396496 B2 JP7396496 B2 JP 7396496B2
- Authority
- JP
- Japan
- Prior art keywords
- constant temperature
- core
- heater
- oscillation
- piezoelectric oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 claims description 134
- 239000000758 substrate Substances 0.000 claims description 83
- 230000010355 oscillation Effects 0.000 claims description 81
- 238000007789 sealing Methods 0.000 claims description 68
- 230000005284 excitation Effects 0.000 claims description 17
- 230000001737 promoting effect Effects 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 5
- 230000000007 visual effect Effects 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 54
- 230000001070 adhesive effect Effects 0.000 description 54
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229920006332 epoxy adhesive Polymers 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
- H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
- H03L1/028—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only of generators comprising piezoelectric resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
- H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
- H03L1/04—Constructional details for maintaining temperature constant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
2 パッケージ
4 コア基板
5 コア部
50 水晶振動子(圧電振動子)
51 発振用IC
52 ヒータ用IC
100 水晶発振器
Claims (9)
- コア部が断熱用のパッケージの内部に密閉状態で封入された恒温槽型圧電発振器であって、
前記コア部は、コア基板を介して前記パッケージに支持されており、
前記コア部は、少なくとも発振用IC、圧電振動子、およびヒータ用ICが順に積層された構成になっていることを特徴とする恒温槽型圧電発振器。 - 請求項1に記載の恒温槽型圧電発振器において、
前記発振用ICおよび前記圧電振動子の互いの対向面同士、前記圧電振動子および前記ヒータ用ICの互いの対向面同士、ならびに、前記ヒータ用ICおよび前記コア基板の互いの対向面同士のうち少なくとも1つの対向面同士は、熱伝導促進部材により固定されていることを特徴とする恒温槽型圧電発振器。 - 請求項2に記載の恒温槽型圧電発振器において、
前記発振用ICと前記圧電振動子の平面視における面積を比較した際に、上方に位置する一方の部材の方が他方の部材よりも小さく、かつ、前記圧電振動子と前記ヒータ用ICの平面視における面積を比較した際に、上方に位置する一方の部材の方が他方の部材よりも小さくなっており、
前記発振用ICと前記圧電振動子との間では、面積が相対的に小さい一方の部材の対向面の全体が、他方の部材に対向しており、
前記圧電振動子と前記ヒータ用ICとの間では、面積が相対的に小さい一方の部材の対向面の全体が、他方の部材に対向していることを特徴とする恒温槽型圧電発振器。 - 請求項2または3に記載の恒温槽型圧電発振器において、
前記コア部の下面の全体が、前記コア基板に対向していることを特徴とする恒温槽型圧電発振器。 - 請求項1~4のいずれか1つに記載の恒温槽型圧電発振器において、
前記コア基板は、前記パッケージの内底面との間に空間を有する状態で前記パッケージに接合されていることを特徴とする恒温槽型圧電発振器。 - 請求項5に記載の恒温槽型圧電発振器において、
前記パッケージの内部には、対向する一対の段差部が形成されており、
前記コア基板は、前記一対の段差部間に架け渡されるように配置されていることを特徴とする恒温槽型圧電発振器。 - 請求項5に記載の恒温槽型圧電発振器において、
前記コア基板と前記パッケージの内底面との間には、介在物が設けられていることを特徴とする恒温槽型圧電発振器。 - 請求項1~7のいずれか1つに記載の恒温槽型圧電発振器において、
前記圧電振動子が、ガラスまたは水晶からなる第1、第2封止部材と、水晶からなり両主面に励振電極が形成された振動部を有する圧電振動板とを備え、前記第1封止部材と前記第2封止部材とが、前記圧電振動板を介して積層して接合され、内部に配された前記圧電振動板の前記振動部が気密封止される構成になっていることを特徴とする恒温槽型圧電発振器。 - 請求項8に記載の恒温槽型圧電発振器において、
前記圧電振動板は、略矩形に形成された振動部と、前記振動部の外周を取り囲む外枠部と、前記振動部と前記外枠部とを連結する連結部とを有しており、
前記発振用ICが、平面視において、前記圧電振動板の前記外枠部の少なくとも一部の領域に重畳していることを特徴とする恒温槽型圧電発振器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020130421 | 2020-07-31 | ||
JP2020130421 | 2020-07-31 | ||
PCT/JP2021/028258 WO2022025227A1 (ja) | 2020-07-31 | 2021-07-30 | 恒温槽型圧電発振器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022025227A1 JPWO2022025227A1 (ja) | 2022-02-03 |
JP7396496B2 true JP7396496B2 (ja) | 2023-12-12 |
Family
ID=80036318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022539588A Active JP7396496B2 (ja) | 2020-07-31 | 2021-07-30 | 恒温槽型圧電発振器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20240120880A1 (ja) |
JP (1) | JP7396496B2 (ja) |
CN (1) | CN114270706A (ja) |
TW (1) | TWI804937B (ja) |
WO (1) | WO2022025227A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115493624A (zh) * | 2022-08-26 | 2022-12-20 | 华为数字能源技术有限公司 | 谐振式传感器、电池、电池包及储能系统 |
CN116647206B (zh) * | 2023-07-27 | 2023-09-26 | 北京炬玄智能科技有限公司 | 一种晶振与芯片叠封的小型化基板封装结构和加工工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015139053A (ja) | 2014-01-21 | 2015-07-30 | 株式会社大真空 | 圧電振動デバイス |
JP2017079348A (ja) | 2015-10-19 | 2017-04-27 | セイコーエプソン株式会社 | 振動デバイス、振動デバイスの製造方法、発振器、電子機器、移動体および基地局 |
JP2018014705A (ja) | 2016-07-07 | 2018-01-25 | 日本電波工業株式会社 | 恒温槽型水晶発振器 |
JP2019129489A (ja) | 2018-01-26 | 2019-08-01 | セイコーエプソン株式会社 | 集積回路装置、振動デバイス、電子機器及び移動体 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102035466B (zh) * | 2010-12-22 | 2013-02-20 | 广东大普通信技术有限公司 | 提升恒温晶振温度稳定度的恒温晶体振荡器 |
CN106416066B (zh) * | 2013-12-20 | 2019-04-19 | 株式会社大真空 | 压电振动器件 |
JP6448199B2 (ja) * | 2014-03-11 | 2019-01-09 | 日本電波工業株式会社 | 恒温槽付水晶発振器 |
CN108352812B (zh) * | 2015-11-05 | 2022-03-22 | 株式会社村田制作所 | 压电振荡器和压电振荡器件 |
-
2021
- 2021-07-30 CN CN202180004957.1A patent/CN114270706A/zh active Pending
- 2021-07-30 JP JP2022539588A patent/JP7396496B2/ja active Active
- 2021-07-30 WO PCT/JP2021/028258 patent/WO2022025227A1/ja active Application Filing
- 2021-07-30 TW TW110128152A patent/TWI804937B/zh active
- 2021-07-30 US US17/768,232 patent/US20240120880A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015139053A (ja) | 2014-01-21 | 2015-07-30 | 株式会社大真空 | 圧電振動デバイス |
JP2017079348A (ja) | 2015-10-19 | 2017-04-27 | セイコーエプソン株式会社 | 振動デバイス、振動デバイスの製造方法、発振器、電子機器、移動体および基地局 |
JP2018014705A (ja) | 2016-07-07 | 2018-01-25 | 日本電波工業株式会社 | 恒温槽型水晶発振器 |
JP2019129489A (ja) | 2018-01-26 | 2019-08-01 | セイコーエプソン株式会社 | 集積回路装置、振動デバイス、電子機器及び移動体 |
Also Published As
Publication number | Publication date |
---|---|
WO2022025227A1 (ja) | 2022-02-03 |
US20240120880A1 (en) | 2024-04-11 |
CN114270706A (zh) | 2022-04-01 |
TW202211615A (zh) | 2022-03-16 |
TWI804937B (zh) | 2023-06-11 |
JPWO2022025227A1 (ja) | 2022-02-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI649963B (zh) | Crystal vibration element | |
JP7396496B2 (ja) | 恒温槽型圧電発振器 | |
US11362641B2 (en) | Piezoelectric resonator device | |
WO2022050414A1 (ja) | 恒温槽型圧電発振器 | |
WO2023182062A1 (ja) | 恒温槽型圧電発振器 | |
JP7420225B2 (ja) | 恒温槽型圧電発振器 | |
TWI804210B (zh) | 恆溫槽型壓電振盪器 | |
WO2022149541A1 (ja) | 圧電振動デバイス | |
JP2021158586A (ja) | 圧電発振器 | |
JP2014195133A (ja) | 圧電発振器 | |
TWI812028B (zh) | 恆溫槽型壓電振盪器 | |
JP7435132B2 (ja) | 圧電発振器 | |
JP2022143325A (ja) | 恒温槽型圧電発振器 | |
WO2022186124A1 (ja) | 恒温槽型圧電発振器 | |
JP7435150B2 (ja) | 圧電発振器 | |
JP2023051073A (ja) | 恒温槽型圧電発振器 | |
JP2021158644A (ja) | 恒温槽型圧電発振器 | |
JP2022036480A (ja) | 発振器 | |
JP2019220795A (ja) | 圧電発振器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220328 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230523 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230721 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231031 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231113 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7396496 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |