JP7393136B2 - ビス（ジアザジエン）コバルト化合物、合成方法、コバルト含有膜の堆積方法、コバルトの選択的堆積方法、コバルト含有膜および容器 - Google Patents

ビス（ジアザジエン）コバルト化合物、合成方法、コバルト含有膜の堆積方法、コバルトの選択的堆積方法、コバルト含有膜および容器 Download PDF

Info

Publication number
JP7393136B2
JP7393136B2 JP2019113554A JP2019113554A JP7393136B2 JP 7393136 B2 JP7393136 B2 JP 7393136B2 JP 2019113554 A JP2019113554 A JP 2019113554A JP 2019113554 A JP2019113554 A JP 2019113554A JP 7393136 B2 JP7393136 B2 JP 7393136B2
Authority
JP
Japan
Prior art keywords
cobalt
diazadiene
bis
metal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019113554A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019218347A (ja
Inventor
シー．クーパー アラン
ブイ．イバノフ セルゲイ
デイビッド ホプキンス クリストファー
キム ムソン
Original Assignee
バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー filed Critical バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
Publication of JP2019218347A publication Critical patent/JP2019218347A/ja
Priority to JP2021169470A priority Critical patent/JP2022023872A/ja
Application granted granted Critical
Publication of JP7393136B2 publication Critical patent/JP7393136B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C07F15/065—Cobalt compounds without a metal-carbon linkage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D25/00—Details of other kinds or types of rigid or semi-rigid containers
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C249/00—Preparation of compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C249/02—Preparation of compounds containing nitrogen atoms doubly-bound to a carbon skeleton of compounds containing imino groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Formation Of Insulating Films (AREA)
JP2019113554A 2018-06-19 2019-06-19 ビス（ジアザジエン）コバルト化合物、合成方法、コバルト含有膜の堆積方法、コバルトの選択的堆積方法、コバルト含有膜および容器 Active JP7393136B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021169470A JP2022023872A (ja) 2018-06-19 2021-10-15 ビス（ジアザジエン）コバルト化合物、その製造方法及び使用方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862686899P 2018-06-19 2018-06-19
US62/686,899 2018-06-19
US16/429,343 2019-06-03
US16/429,343 US11440929B2 (en) 2018-06-19 2019-06-03 Bis(diazadiene)cobalt compounds, method of making and method of use thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021169470A Division JP2022023872A (ja) 2018-06-19 2021-10-15 ビス（ジアザジエン）コバルト化合物、その製造方法及び使用方法

Publications (2)

Publication Number Publication Date
JP2019218347A JP2019218347A (ja) 2019-12-26
JP7393136B2 true JP7393136B2 (ja) 2023-12-06

Family

ID=66998308

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019113554A Active JP7393136B2 (ja) 2018-06-19 2019-06-19 ビス（ジアザジエン）コバルト化合物、合成方法、コバルト含有膜の堆積方法、コバルトの選択的堆積方法、コバルト含有膜および容器
JP2021169470A Pending JP2022023872A (ja) 2018-06-19 2021-10-15 ビス（ジアザジエン）コバルト化合物、その製造方法及び使用方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021169470A Pending JP2022023872A (ja) 2018-06-19 2021-10-15 ビス（ジアザジエン）コバルト化合物、その製造方法及び使用方法

Country Status (7)

Country Link
US (1) US11440929B2 (cg-RX-API-DMAC7.html)
EP (1) EP3584250B1 (cg-RX-API-DMAC7.html)
JP (2) JP7393136B2 (cg-RX-API-DMAC7.html)
KR (1) KR102362602B1 (cg-RX-API-DMAC7.html)
CN (1) CN110615746B (cg-RX-API-DMAC7.html)
SG (1) SG10201905339YA (cg-RX-API-DMAC7.html)
TW (1) TWI722456B (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090269507A1 (en) * 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US11476158B2 (en) * 2014-09-14 2022-10-18 Entegris, Inc. Cobalt deposition selectivity on copper and dielectrics
US11440929B2 (en) * 2018-06-19 2022-09-13 Versum Materials Us, Llc Bis(diazadiene)cobalt compounds, method of making and method of use thereof
JP7378267B2 (ja) * 2018-11-12 2023-11-13 東ソー株式会社 コバルト錯体、その製造方法、及びコバルト含有薄膜の製造方法
US12014925B2 (en) * 2021-05-25 2024-06-18 Applied Materials, Inc. Metal-doped carbon hardmasks
JP7884742B2 (ja) * 2023-08-24 2026-07-06 ダイキン工業株式会社 薄膜の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164456A1 (en) 2010-08-24 2013-06-27 Wayne State University Thermally stable volatile precursors
JP2013545755A (ja) 2010-11-17 2013-12-26 ユーピー ケミカル カンパニー リミテッド ジアザジエン系金属化合物、これの製造方法及びこれを利用した薄膜形成方法
JP5865352B2 (ja) 2011-04-20 2016-02-17 田中貴金属工業株式会社 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法
WO2016040077A1 (en) 2014-09-14 2016-03-17 Entergris, Inc. Cobalt deposition selectivity on copper and dielectrics
JP2016164131A (ja) 2015-03-06 2016-09-08 株式会社Adeka ジアザジエニル化合物、薄膜形成用原料、薄膜の製造方法及びジアザジエン化合物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7572731B2 (en) 2005-06-28 2009-08-11 Micron Technology, Inc. Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
JP5706755B2 (ja) 2010-06-10 2015-04-22 東ソー株式会社 ヒドロシラン誘導体、その製造方法、ケイ素含有薄膜の製造法
US9822446B2 (en) 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
US9067958B2 (en) 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
US10563305B2 (en) 2015-05-13 2020-02-18 Versum Materials Us, Llc Container for chemical precursors in a deposition process
JP6675159B2 (ja) * 2015-06-17 2020-04-01 株式会社Adeka 新規な化合物、薄膜形成用原料及び薄膜の製造方法
US10480070B2 (en) 2016-05-12 2019-11-19 Versum Materials Us, Llc Delivery container with flow distributor
TWI736631B (zh) 2016-06-06 2021-08-21 韋恩州立大學 二氮雜二烯錯合物與胺類的反應
JP6735163B2 (ja) 2016-06-22 2020-08-05 株式会社Adeka バナジウム化合物、薄膜形成用原料及び薄膜の製造方法
WO2018187781A2 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Metal precursors with modified diazabutadiene ligands for cvd and ald applications and methods of use
US11440929B2 (en) * 2018-06-19 2022-09-13 Versum Materials Us, Llc Bis(diazadiene)cobalt compounds, method of making and method of use thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164456A1 (en) 2010-08-24 2013-06-27 Wayne State University Thermally stable volatile precursors
JP2013545755A (ja) 2010-11-17 2013-12-26 ユーピー ケミカル カンパニー リミテッド ジアザジエン系金属化合物、これの製造方法及びこれを利用した薄膜形成方法
JP5865352B2 (ja) 2011-04-20 2016-02-17 田中貴金属工業株式会社 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法
WO2016040077A1 (en) 2014-09-14 2016-03-17 Entergris, Inc. Cobalt deposition selectivity on copper and dielectrics
JP2016164131A (ja) 2015-03-06 2016-09-08 株式会社Adeka ジアザジエニル化合物、薄膜形成用原料、薄膜の製造方法及びジアザジエン化合物

Also Published As

Publication number Publication date
JP2022023872A (ja) 2022-02-08
TWI722456B (zh) 2021-03-21
KR20190143395A (ko) 2019-12-30
TW202000685A (zh) 2020-01-01
EP3584250A1 (en) 2019-12-25
CN110615746A (zh) 2019-12-27
SG10201905339YA (en) 2020-01-30
EP3584250B1 (en) 2021-12-15
JP2019218347A (ja) 2019-12-26
US20190382430A1 (en) 2019-12-19
CN110615746B (zh) 2023-03-03
US11440929B2 (en) 2022-09-13
KR102362602B1 (ko) 2022-02-15

Similar Documents

Publication Publication Date Title
US11440929B2 (en) Bis(diazadiene)cobalt compounds, method of making and method of use thereof
JP5918316B2 (ja) 揮発性ジヒドロピラジニル及びジヒドロピラジン金属錯体
TWI756699B (zh) 用於薄膜沉積的新穎第v及vi族過渡金屬前驅物
US10290540B2 (en) Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof
JP2019535900A (ja) コバルト化合物、その製造方法及びその使用方法
US20180134738A1 (en) Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof
JP2022023872A5 (cg-RX-API-DMAC7.html)
US20260035396A1 (en) Liquid molybdenum bis(arene) compositions for deposition of molybdenum-containing films
US20250003058A1 (en) SELECTIVE DEPOSITION OF RUTHENIUM FILM BY UTILIZING Ru(I) PRECURSORS
JP2016513085A (ja) コバルト含有化合物、その合成及びコバルト含有膜の堆積におけるその使用
TWI672390B (zh) 二取代炔基二鈷六羰基化合物、其製造及使用方法
KR102592166B1 (ko) 이치환된 알킨 디코발트 헥사카보닐 화합물들, 이를 제조하는 방법, 및 이의 사용 방법
WO2025252680A1 (en) Metal compounds for ald applications
CN120303439A (zh) 用于选择性沉积的高纯度炔基胺
CN120435479A (zh) 用于气相薄膜沉积技术的具有改进的热稳定性的分子内稳定的金属配合物
CN120476123A (zh) 用于气相薄膜沉积技术的具有改善的热稳定性的分子内稳定的13族金属络合物
CN118786132A (zh) 用于cvd及ald应用的具有磷基配体的金属羰基配合物
KR20230152748A (ko) 박막 증착 공정에서 금속 옥시할로겐화물 전구체로부터 산소를 제거하기 위한 시약
Blakeney Synthesis Of Volatile And Thermally Stable Aluminum Hydride Complexes And Their Use In Atomic Layer Deposition Of Metal Thin Films

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190725

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200630

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200728

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20201027

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20210615

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211015

C60 Trial request (containing other claim documents, opposition documents)

Free format text: JAPANESE INTERMEDIATE CODE: C60

Effective date: 20211015

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20211022

C21 Notice of transfer of a case for reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C21

Effective date: 20211026

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20211224

C211 Notice of termination of reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C211

Effective date: 20220104

C22 Notice of designation (change) of administrative judge

Free format text: JAPANESE INTERMEDIATE CODE: C22

Effective date: 20221108

C22 Notice of designation (change) of administrative judge

Free format text: JAPANESE INTERMEDIATE CODE: C22

Effective date: 20230328

C13 Notice of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: C13

Effective date: 20230404

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230630

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231124

R150 Certificate of patent or registration of utility model

Ref document number: 7393136

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150