JP5865352B2 - 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 - Google Patents
化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 Download PDFInfo
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- JP5865352B2 JP5865352B2 JP2013510990A JP2013510990A JP5865352B2 JP 5865352 B2 JP5865352 B2 JP 5865352B2 JP 2013510990 A JP2013510990 A JP 2013510990A JP 2013510990 A JP2013510990 A JP 2013510990A JP 5865352 B2 JP5865352 B2 JP 5865352B2
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- platinum
- vapor deposition
- chemical vapor
- platinum compound
- deposition method
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- 150000003058 platinum compounds Chemical class 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 24
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 174
- 229910052697 platinum Inorganic materials 0.000 claims description 81
- 239000010409 thin film Substances 0.000 claims description 44
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 23
- 125000001424 substituent group Chemical group 0.000 claims description 23
- AHAREKHAZNPPMI-UHFFFAOYSA-N hexa-1,3-diene Chemical compound CCC=CC=C AHAREKHAZNPPMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- -1 alkyl anion Chemical class 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 46
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 27
- 239000000243 solution Substances 0.000 description 25
- 238000005755 formation reaction Methods 0.000 description 24
- 239000003446 ligand Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 18
- 238000000354 decomposition reaction Methods 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000002244 precipitate Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 239000000523 sample Substances 0.000 description 9
- 238000005979 thermal decomposition reaction Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- VEJOYRPGKZZTJW-FDGPNNRMSA-N (z)-4-hydroxypent-3-en-2-one;platinum Chemical compound [Pt].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O VEJOYRPGKZZTJW-FDGPNNRMSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 150000003057 platinum Chemical class 0.000 description 6
- 238000000967 suction filtration Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 239000013585 weight reducing agent Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- SLQMKNPIYMOEGB-UHFFFAOYSA-N 2-methylhexa-1,5-diene Chemical compound CC(=C)CCC=C SLQMKNPIYMOEGB-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229940045985 antineoplastic platinum compound Drugs 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000004440 column chromatography Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- DQYBDCGIPTYXML-UHFFFAOYSA-N ethoxyethane;hydrate Chemical compound O.CCOCC DQYBDCGIPTYXML-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000005457 ice water Substances 0.000 description 3
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- DSAYAFZWRDYBQY-UHFFFAOYSA-N 2,5-dimethylhexa-1,5-diene Chemical compound CC(=C)CCC(C)=C DSAYAFZWRDYBQY-UHFFFAOYSA-N 0.000 description 2
- YGBYJRVGNBVTCQ-UHFFFAOYSA-N C[Pt](C)C.[CH]1C=CC=C1 Chemical compound C[Pt](C)C.[CH]1C=CC=C1 YGBYJRVGNBVTCQ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000012295 chemical reaction liquid Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- VJGYJQUTDBRHBS-UHFFFAOYSA-N platinum;trifluorophosphane Chemical compound [Pt].FP(F)F.FP(F)F.FP(F)F.FP(F)F VJGYJQUTDBRHBS-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- PRBHEGAFLDMLAL-UHFFFAOYSA-N 1,5-Hexadiene Natural products CC=CCC=C PRBHEGAFLDMLAL-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910002845 Pt–Ni Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- FEEBHGLCZFJVMF-UHFFFAOYSA-N hexa-1,3-diene hexa-1,5-diene Chemical compound C=CCCC=C.C=CC=CCC FEEBHGLCZFJVMF-UHFFFAOYSA-N 0.000 description 1
- PYGSKMBEVAICCR-UHFFFAOYSA-N hexa-1,5-diene Chemical compound C=CCCC=C PYGSKMBEVAICCR-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0086—Platinum compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
Description
(i)置換基R1、R2は、いずれもメチル基であり、置換基R3、R4は、いずれも水素である有機白金化合物。
で再度、段階的に攪拌した(反応液45℃で3時間、50℃で20時間)。以上の反応後、反応液はほぼ透明となり、白色の沈殿が得られた。この白色沈殿物を吸引ろ過して回収し、水、エタノール、ジエチルエーテルで2回ずつ洗浄し、大気乾燥、真空乾燥して白色の1,5−ヘキサジエン白金(II)ジクロリド78.33g(0.225mol)を得た(収率93.4%)。
基板加熱温度200、225、250、275、300℃
キャリアガス(窒素)流量:10sccm
反応ガス(水素)流量:50sccm
圧力:50Pa
成膜時間:30分
Claims (7)
- 有機白金化合物を分解するための反応雰囲気は、還元性雰囲気である請求項6に記載の化学蒸着法。
- 還元性雰囲気として、水素、アンモニアを導入する請求項7に記載の化学蒸着法。
- 置換基R1、R2は、少なくともいずれかがメチル基、エチル基、プロピル基のいずれかである請求項6〜請求項8のいずれかに記載の化学蒸着法。
- 置換基R3、R4は、少なくともいずれかがメチル基である請求項9に記載の化学蒸着法。
- 置換基R1、R2は、いずれもメチル基であり、置換基R3、R4は、いずれも水素である請求項6〜請求項8のいずれかに記載の化学蒸着法。
- 置換基R1、R2は、メチル基、エチル基、プロピル基のいずれかでR1、R2が同一のものであり、置換基R3、R4は、少なくともいずれかがメチル基である請求項6〜請求項8のいずれかに記載の化学蒸着法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2013510990A JP5865352B2 (ja) | 2011-04-20 | 2012-04-16 | 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011093671 | 2011-04-20 | ||
JP2011093671 | 2011-04-20 | ||
JP2013510990A JP5865352B2 (ja) | 2011-04-20 | 2012-04-16 | 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 |
PCT/JP2012/060255 WO2012144455A1 (ja) | 2011-04-20 | 2012-04-16 | 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2012144455A1 JPWO2012144455A1 (ja) | 2014-07-28 |
JP5865352B2 true JP5865352B2 (ja) | 2016-02-17 |
Family
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Family Applications (1)
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JP2013510990A Active JP5865352B2 (ja) | 2011-04-20 | 2012-04-16 | 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8911827B2 (ja) |
EP (1) | EP2700646B1 (ja) |
JP (1) | JP5865352B2 (ja) |
KR (1) | KR101606252B1 (ja) |
CN (1) | CN103492399B (ja) |
TW (1) | TWI439563B (ja) |
WO (1) | WO2012144455A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7393136B2 (ja) | 2018-06-19 | 2023-12-06 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ビス(ジアザジエン)コバルト化合物、合成方法、コバルト含有膜の堆積方法、コバルトの選択的堆積方法、コバルト含有膜および容器 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5960321B1 (ja) | 2015-05-12 | 2016-08-02 | 田中貴金属工業株式会社 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
JP5952460B1 (ja) * | 2015-05-12 | 2016-07-13 | 田中貴金属工業株式会社 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
JP6407370B1 (ja) * | 2017-07-25 | 2018-10-17 | 田中貴金属工業株式会社 | 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 |
US11742151B2 (en) | 2019-05-29 | 2023-08-29 | King Fahd University Of Petroleum And Minerals | Aerosol assisted chemical vapor deposition methods useful for making dye-sensitized solar cells with platinum dialkyldithiocarbamate complexes |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3622367A (en) * | 1970-03-24 | 1971-11-23 | Mobil Oil Corp | Contact deposition of platinum and other metals |
US3635761A (en) * | 1970-05-05 | 1972-01-18 | Mobil Oil Corp | Electroless deposition of metals |
US20070269981A1 (en) * | 2006-05-22 | 2007-11-22 | Lavoie Adrien R | Electroless treatment of noble metal barrier and adhesion layer |
JP2012515193A (ja) * | 2009-01-15 | 2012-07-05 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク | 白金の化学蒸着のための金属錯体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5130172A (en) * | 1988-10-21 | 1992-07-14 | The Regents Of The University Of California | Low temperature organometallic deposition of metals |
US5783716A (en) | 1996-06-28 | 1998-07-21 | Advanced Technology Materials, Inc. | Platinum source compositions for chemical vapor deposition of platinum |
JP3321729B2 (ja) | 1998-04-03 | 2002-09-09 | 株式会社高純度化学研究所 | トリメチル(エチルシクロペンタジエニル)白金とそ の製造方法及びそれを用いた白金含有薄膜の製造方法 |
JP4162366B2 (ja) * | 2000-03-31 | 2008-10-08 | 田中貴金属工業株式会社 | Cvd薄膜形成プロセス及びcvd薄膜製造装置 |
JP5088773B2 (ja) | 2007-03-19 | 2012-12-05 | 株式会社トリケミカル研究所 | 膜形成方法および膜形成材料 |
JP5454141B2 (ja) * | 2007-07-19 | 2014-03-26 | 宇部興産株式会社 | 有機白金錯体及び当該白金錯体を用いた化学気相蒸着法による白金含有薄膜の製造法 |
US8636845B2 (en) * | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US20140065060A1 (en) * | 2012-08-31 | 2014-03-06 | Karlsruher Institut Fur Technologie (Kit) | Precursors for Metal Organic Chemical Vapor Deposition Processes and Their Use |
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2012
- 2012-04-16 EP EP12774783.0A patent/EP2700646B1/en active Active
- 2012-04-16 JP JP2013510990A patent/JP5865352B2/ja active Active
- 2012-04-16 WO PCT/JP2012/060255 patent/WO2012144455A1/ja active Application Filing
- 2012-04-16 CN CN201280019154.4A patent/CN103492399B/zh active Active
- 2012-04-16 KR KR1020137030041A patent/KR101606252B1/ko active IP Right Grant
- 2012-04-16 US US14/003,297 patent/US8911827B2/en active Active
- 2012-04-18 TW TW101113721A patent/TWI439563B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3622367A (en) * | 1970-03-24 | 1971-11-23 | Mobil Oil Corp | Contact deposition of platinum and other metals |
US3635761A (en) * | 1970-05-05 | 1972-01-18 | Mobil Oil Corp | Electroless deposition of metals |
US20070269981A1 (en) * | 2006-05-22 | 2007-11-22 | Lavoie Adrien R | Electroless treatment of noble metal barrier and adhesion layer |
JP2012515193A (ja) * | 2009-01-15 | 2012-07-05 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク | 白金の化学蒸着のための金属錯体 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7393136B2 (ja) | 2018-06-19 | 2023-12-06 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ビス(ジアザジエン)コバルト化合物、合成方法、コバルト含有膜の堆積方法、コバルトの選択的堆積方法、コバルト含有膜および容器 |
Also Published As
Publication number | Publication date |
---|---|
KR20130138845A (ko) | 2013-12-19 |
KR101606252B1 (ko) | 2016-03-24 |
EP2700646A4 (en) | 2014-08-27 |
WO2012144455A1 (ja) | 2012-10-26 |
CN103492399B (zh) | 2016-03-30 |
TWI439563B (zh) | 2014-06-01 |
CN103492399A (zh) | 2014-01-01 |
JPWO2012144455A1 (ja) | 2014-07-28 |
EP2700646B1 (en) | 2015-10-14 |
US8911827B2 (en) | 2014-12-16 |
EP2700646A1 (en) | 2014-02-26 |
US20130344243A1 (en) | 2013-12-26 |
TW201311922A (zh) | 2013-03-16 |
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