JP7372969B2 - アレイ基板及び表示パネル - Google Patents
アレイ基板及び表示パネル Download PDFInfo
- Publication number
- JP7372969B2 JP7372969B2 JP2021529050A JP2021529050A JP7372969B2 JP 7372969 B2 JP7372969 B2 JP 7372969B2 JP 2021529050 A JP2021529050 A JP 2021529050A JP 2021529050 A JP2021529050 A JP 2021529050A JP 7372969 B2 JP7372969 B2 JP 7372969B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- electrode plate
- pole
- array substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 100
- 239000003990 capacitor Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 11
- 238000010586 diagram Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/08—Details of timing specific for flat panels, other than clock recovery
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2354/00—Aspects of interface with display user
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Liquid Crystal Display Device Control (AREA)
Description
前記第1トランジスタのゲートが第1制御信号線に接続され、前記第1トランジスタの第1極が第1電源線に接続され、前記第1トランジスタの第2極が前記第2トランジスタの第1極に接続され、
前記第1容量が第1電極板及び第2電極板を含み、前記第1電極板が前記第1トランジスタの第2極及び前記第2トランジスタの第1極に接続され、前記第2電極板が共通電圧信号線に接続され、
前記第1電極板及び前記第2電極板が共に透明電極板であり、前記駆動回路及び前記受光回路が前記共通電圧信号線を共有する。
前記第1トランジスタ及び前記第2トランジスタの前記ベース基板から離れた側に設けられる第1無機層と、
前記第1無機層の前記第1トランジスタから離れた側に設けられて、前記第1電極板と前記第2電極板との間に位置する第2無機層と、をさらに含む。
前記第1トランジスタと同層に設けられる第3トランジスタと、
前記第1電極板又は前記第2電極板と同層に設けられる画素電極と、
前記第2電極板として多重化される共通電極と、を含む。
前記第1トランジスタと同層に設けられる第3トランジスタと、
前記第3トランジスタの上方に設けられて、前記第3トランジスタに電気的に接続される画素電極と、
前記第2電極板として多重化される共通電極と、を含み、
前記画素電極が、前記第1電極板及び前記第2電極板と異なる層に設けられる。
前記第1トランジスタのゲートが第1制御信号線に接続され、前記第1トランジスタの第1極が第1電源線に接続され、前記第1トランジスタの第2極が前記第2トランジスタの第1極に接続され、
前記第1容量が第1電極板及び第2電極板を含み、前記第1電極板が前記第1トランジスタの第2極及び前記第2トランジスタの第1極に接続され、前記第2電極板が共通電圧信号線に接続され、
前記第1電極板及び前記第2電極板が共に透明電極板であり、前記駆動回路及び前記受光回路が前記共通電圧信号線を共有する。
前記第1トランジスタ及び前記第2トランジスタの前記ベース基板から離れた側に設けられる第1無機層と、
前記第1無機層の前記第1トランジスタから離れた側に設けられて、前記第1電極板と前記第2電極板との間に位置する第2無機層と、をさらに含む。
前記第1トランジスタと同層に設けられる第3トランジスタと、
前記第1電極板又は前記第2電極板と同層に設けられる画素電極と、
前記第2電極板として多重化される共通電極と、を含み、
前記表示パネルは、1フレーム時間内に表示段階及び受光段階に分けられ、前記表示ユニットが前記表示段階で動作し、前記受光ユニットが前記受光段階で動作する。
前記第1トランジスタと同層に設けられる第3トランジスタと、
前記第3トランジスタの上方に設けられて、前記第3トランジスタに電気的に接続される画素電極と、
前記第2電極板として多重化される共通電極と、を含み、
前記画素電極が、前記第1電極板及び前記第2電極板と異なる層に設けられる。
本発明に係るアレイ基板及び表示パネルは、前記アレイ基板が表示ユニットと、第1トランジスタ、第2トランジスタ及び第1容量を含む受光ユニットとを含み、第1トランジスタ及び第2トランジスタが同層に設けられ、第1容量が第1トランジスタ及び第2トランジスタの上方に位置し、第1容量の第1電極板及び第2電極板が共に透明電極板であり、第1電極板が新たに追加された透明導電膜層で形成され、第2電極板が表示ユニットの共通電極で多重化され、1フレーム時間内に表示ユニット及び受光ユニットが時分割で交互に動作することで、第1容量が光透過可能であり、表示領域の面積を余分に占有することなく、表示パネルの表示に影響を与えることなく、表示パネルの開口率及び表示効果を向上させる。第1容量の電極板が透明電極板であり、表示に影響を与えることなく表示領域に設けられているため、面積が大きい第1容量を設けることができ、受光効果を向上させる。
Claims (15)
- ベース基板と、前記ベース基板に設けられる画素回路とを含み、前記画素回路が、駆動回路と、第1トランジスタ、第2トランジスタ及び第1容量を含む受光回路とを含むアレイ基板であって、
前記第1トランジスタのゲートが第1制御信号線に接続され、前記第1トランジスタの第1極が第1電源線に接続され、前記第1トランジスタの第2極が前記第2トランジスタの第1極に接続され、
前記第1容量が第1電極板及び第2電極板を含み、前記第1電極板が前記第1トランジスタの第2極及び前記第2トランジスタの第1極に接続され、前記第2電極板が共通電圧信号線に接続され、
前記第1電極板及び前記第2電極板が共に透明電極板であり、前記駆動回路及び前記受光回路が前記共通電圧信号線を共有し、
前記アレイ基板は、前記受光回路が内部に設けられる受光ユニットをさらに含み、前記第1トランジスタ及び前記第2トランジスタが同層に設けられ、前記第1容量が、前記第1トランジスタ及び前記第2トランジスタの前記ベース基板から離れた側に設けられ、
前記アレイ基板は、
前記第1トランジスタ及び前記第2トランジスタの前記ベース基板から離れた側に設けられる第1無機層と、
前記第1無機層の前記第1トランジスタから離れた側に設けられて、前記第1電極板と前記第2電極板との間に位置する第2無機層と、をさらに含み、
前記アレイ基板は、前記駆動回路が内部に設けられる表示ユニットをさらに含み、前記表示ユニットは、
前記第1トランジスタと同層に設けられる第3トランジスタと、
前記第1電極板又は前記第2電極板と同層に設けられる画素電極と、
前記第2電極板として多重化される共通電極と、を含む、
アレイ基板。 - 前記受光回路は、前記第2トランジスタの第2極に接続される読み出し回路をさらに含み、前記第2トランジスタのゲートが第2制御信号線に接続される請求項1に記載のアレイ基板。
- 前記第1電極板が前記第1無機層に設けられ、前記第2電極板が前記第2無機層に設けられる請求項1に記載のアレイ基板。
- 前記第2電極板が前記第1無機層に設けられ、前記第1電極板が前記第2無機層に設けられる請求項1に記載のアレイ基板。
- 前記第1電極板、前記共通電極及び前記画素電極の材料が同じである請求項1に記載のアレイ基板。
- 前記アレイ基板は、前記駆動回路が内部に設けられる表示ユニットをさらに含み、前記表示ユニットは、
前記第1トランジスタと同層に設けられる第3トランジスタと、
前記第3トランジスタの上方に設けられて、前記第3トランジスタに電気的に接続される画素電極と、
前記第2電極板として多重化される共通電極と、を含み、
前記画素電極が、前記第1電極板及び前記第2電極板と異なる層に設けられる請求項1に記載のアレイ基板。 - 前記共通電圧信号線が前記第1トランジスタのゲートと同層に設けられる請求項1に記載のアレイ基板。
- ベース基板と、前記ベース基板に設けられる画素回路とを含むアレイ基板を含み、前記画素回路が、駆動回路と、第1トランジスタ、第2トランジスタ及び第1容量を含む受光回路とを含む表示パネルであって、
前記第1トランジスタのゲートが第1制御信号線に接続され、前記第1トランジスタの第1極が第1電源線に接続され、前記第1トランジスタの第2極が前記第2トランジスタの第1極に接続され、
前記第1容量が第1電極板及び第2電極板を含み、前記第1電極板が前記第1トランジスタの第2極及び前記第2トランジスタの第1極に接続され、前記第2電極板が共通電圧信号線に接続され、
前記第1電極板及び前記第2電極板が共に透明電極板であり、前記駆動回路及び前記受光回路が前記共通電圧信号線を共有し、
前記アレイ基板は、前記受光回路が内部に設けられる受光ユニットをさらに含み、前記第1トランジスタ及び前記第2トランジスタが同層に設けられ、前記第1容量が、前記第1トランジスタ及び前記第2トランジスタの前記ベース基板から離れた側に設けられ、
前記アレイ基板は、
前記第1トランジスタ及び前記第2トランジスタの前記ベース基板から離れた側に設けられる第1無機層と、
前記第1トランジスタ及び前記第2トランジスタの前記ベース基板から離れた側に設けられる第1無機層と、
前記第1無機層の前記第1トランジスタから離れた側に設けられて、前記第1電極板と前記第2電極板との間に位置する第2無機層と、をさらに含み、
前記アレイ基板は、前記駆動回路が内部に設けられる表示ユニットをさらに含み、前記表示ユニットは、
前記第1トランジスタと同層に設けられる第3トランジスタと、
前記第1電極板又は前記第2電極板と同層に設けられる画素電極と、
前記第2電極板として多重化される共通電極と、を含む、
表示パネル。 - 前記受光回路は、前記第2トランジスタの第2極に接続される読み出し回路をさらに含み、前記第2トランジスタのゲートが第2制御信号線に接続される請求項8に記載の表示パネル。
- 前記表示パネルは、1フレーム時間内に表示段階及び受光段階に分けられ、前記表示ユニットが前記表示段階で動作し、前記受光ユニットが前記受光段階で動作する請求項8に記載の表示パネル。
- 前記第1電極板が前記第1無機層に設けられ、前記第2電極板が前記第2無機層に設けられる請求項8に記載の表示パネル。
- 前記第2電極板が前記第1無機層に設けられ、前記第1電極板が前記第2無機層に設けられる請求項8に記載の表示パネル。
- 前記第1電極板、前記共通電極及び前記画素電極の材料が同じである請求項8に記載の表示パネル。
- 前記アレイ基板は、前記駆動回路が内部に設けられる表示ユニットをさらに含み、前記表示ユニットは、
前記第1トランジスタと同層に設けられる第3トランジスタと、
前記第3トランジスタの上方に設けられて、前記第3トランジスタに電気的に接続される画素電極と、
前記第2電極板として多重化される共通電極と、を含み、
前記画素電極が、前記第1電極板及び前記第2電極板と異なる層に設けられる請求項8に記載の表示パネル。 - 前記共通電圧信号線が前記第1トランジスタのゲートと同層に設けられる請求項8に記載の表示パネル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110469516.0 | 2021-04-28 | ||
CN202110469516.0A CN113156678B (zh) | 2021-04-28 | 2021-04-28 | 阵列基板和显示面板 |
PCT/CN2021/094410 WO2022227136A1 (zh) | 2021-04-28 | 2021-05-18 | 阵列基板和显示面板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023526876A JP2023526876A (ja) | 2023-06-26 |
JP7372969B2 true JP7372969B2 (ja) | 2023-11-01 |
Family
ID=76872252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021529050A Active JP7372969B2 (ja) | 2021-04-28 | 2021-05-18 | アレイ基板及び表示パネル |
Country Status (6)
Country | Link |
---|---|
US (1) | US20240194699A1 (ja) |
EP (1) | EP4332668A1 (ja) |
JP (1) | JP7372969B2 (ja) |
KR (1) | KR102473484B1 (ja) |
CN (1) | CN113156678B (ja) |
WO (1) | WO2022227136A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113946241A (zh) * | 2021-10-09 | 2022-01-18 | Tcl华星光电技术有限公司 | 显示面板及显示终端 |
CN114171542B (zh) * | 2021-12-06 | 2023-08-22 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及移动终端 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010262268A (ja) | 2009-05-06 | 2010-11-18 | Samsung Electronics Co Ltd | 情報認識表示装置 |
JP2011018053A (ja) | 2003-10-15 | 2011-01-27 | Samsung Electronics Co Ltd | 光感知部を有する電子ディスプレイ装置 |
US20150187854A1 (en) | 2013-12-31 | 2015-07-02 | Lg Display Co., Ltd. | Organic light emitting display device and fabricating method thereof |
US20160042216A1 (en) | 2014-08-07 | 2016-02-11 | Boe Technology Group Co., Ltd. | Array Substrate, Driving Method Thereof, and Display Apparatus |
JP2017227896A (ja) | 2016-06-16 | 2017-12-28 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
CN110491886A (zh) | 2019-08-23 | 2019-11-22 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
CN111725242A (zh) | 2020-06-30 | 2020-09-29 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
CN111916464A (zh) | 2020-09-15 | 2020-11-10 | 武汉华星光电技术有限公司 | 阵列基板及其制备方法、显示面板 |
CN112306304A (zh) | 2020-10-16 | 2021-02-02 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
US20210066402A1 (en) | 2019-08-27 | 2021-03-04 | Boe Technology Group Co., Ltd. | Display substrate, display panel, and manufacturing method of display substrate |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4085369B2 (ja) * | 2002-10-10 | 2008-05-14 | 日本ビクター株式会社 | 液晶表示装置 |
KR101032946B1 (ko) * | 2004-04-01 | 2011-05-09 | 삼성전자주식회사 | 광센서 및 이를 구비한 표시 장치 |
US7663380B2 (en) * | 2007-12-06 | 2010-02-16 | Himax Technologies Limited | Capacitive fingerprint sensor and the panel thereof |
US7688082B2 (en) * | 2008-02-20 | 2010-03-30 | Himax Technologies Limited | Capacitive fingerprint sensor and the panel thereof |
CN111584577A (zh) * | 2020-05-14 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
CN112415798B (zh) * | 2020-11-10 | 2023-04-07 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法、显示装置 |
-
2021
- 2021-04-28 CN CN202110469516.0A patent/CN113156678B/zh active Active
- 2021-05-18 KR KR1020217020078A patent/KR102473484B1/ko active IP Right Grant
- 2021-05-18 US US17/297,562 patent/US20240194699A1/en active Pending
- 2021-05-18 JP JP2021529050A patent/JP7372969B2/ja active Active
- 2021-05-18 WO PCT/CN2021/094410 patent/WO2022227136A1/zh active Application Filing
- 2021-05-18 EP EP21730451.8A patent/EP4332668A1/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011018053A (ja) | 2003-10-15 | 2011-01-27 | Samsung Electronics Co Ltd | 光感知部を有する電子ディスプレイ装置 |
JP2010262268A (ja) | 2009-05-06 | 2010-11-18 | Samsung Electronics Co Ltd | 情報認識表示装置 |
US20150187854A1 (en) | 2013-12-31 | 2015-07-02 | Lg Display Co., Ltd. | Organic light emitting display device and fabricating method thereof |
US20160042216A1 (en) | 2014-08-07 | 2016-02-11 | Boe Technology Group Co., Ltd. | Array Substrate, Driving Method Thereof, and Display Apparatus |
JP2017227896A (ja) | 2016-06-16 | 2017-12-28 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
CN110491886A (zh) | 2019-08-23 | 2019-11-22 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
US20210066402A1 (en) | 2019-08-27 | 2021-03-04 | Boe Technology Group Co., Ltd. | Display substrate, display panel, and manufacturing method of display substrate |
CN111725242A (zh) | 2020-06-30 | 2020-09-29 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
CN111916464A (zh) | 2020-09-15 | 2020-11-10 | 武汉华星光电技术有限公司 | 阵列基板及其制备方法、显示面板 |
CN112306304A (zh) | 2020-10-16 | 2021-02-02 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
KR102473484B1 (ko) | 2022-12-01 |
KR20220149404A (ko) | 2022-11-08 |
US20240194699A1 (en) | 2024-06-13 |
CN113156678A (zh) | 2021-07-23 |
EP4332668A1 (en) | 2024-03-06 |
JP2023526876A (ja) | 2023-06-26 |
WO2022227136A1 (zh) | 2022-11-03 |
CN113156678B (zh) | 2023-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4542430B2 (ja) | 指紋認識素子を内装した一体型液晶表示装置、及びこれの製造方法 | |
TWI416214B (zh) | 液晶顯示器裝置及製造其之方法 | |
WO2017008481A1 (zh) | 显示装置和阵列基板 | |
WO2020173261A1 (zh) | 显示面板及其制造方法和显示装置 | |
JP7372969B2 (ja) | アレイ基板及び表示パネル | |
US9530801B2 (en) | Display circuitry with improved transmittance and reduced coupling capacitance | |
TWI294688B (en) | Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus | |
WO2018176900A1 (en) | Display panel, driving method and manufacturing method thereof, and display apparatus | |
KR20080080732A (ko) | 표시장치 및 이의 제조방법 | |
US8581253B2 (en) | Display substrate and method of manufacturing the same | |
TWI413829B (zh) | 反射式觸控顯示面板及其製造方法 | |
US11249609B2 (en) | Touch display module, display device and driving method thereof | |
JP4337895B2 (ja) | 液晶表示装置 | |
KR20150137218A (ko) | 액정표시장치 및 이의 제조 방법 | |
US8300169B2 (en) | TFT substrate, LCD device using same and method for manufacturing TFT substrate | |
US10558102B2 (en) | Method for forming liquid crystal display panel and liquid crystal display panel | |
KR20040081885A (ko) | 지문 인식장치 및 이의 제조방법 | |
KR20110063225A (ko) | 전기영동 표시장치 및 이의 제조방법 | |
KR20070002685A (ko) | 표시기판, 이의 제조 방법 및 표시기판을 갖는 표시장치 | |
US8786815B2 (en) | Driving circuit and display panel having the same | |
TWI279632B (en) | Active matrix pixel device | |
KR100968573B1 (ko) | 액정표시장치 및 그 제조방법 | |
US10620468B2 (en) | Method of manufacturing display panel substrate | |
CN111580315B (zh) | 有源矩阵基板和具备其的液晶显示装置 | |
JP4893115B2 (ja) | 表示パネル |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210707 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230704 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230911 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230926 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231020 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7372969 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |