WO2017008481A1 - 显示装置和阵列基板 - Google Patents

显示装置和阵列基板 Download PDF

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Publication number
WO2017008481A1
WO2017008481A1 PCT/CN2016/070745 CN2016070745W WO2017008481A1 WO 2017008481 A1 WO2017008481 A1 WO 2017008481A1 CN 2016070745 W CN2016070745 W CN 2016070745W WO 2017008481 A1 WO2017008481 A1 WO 2017008481A1
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Prior art keywords
display device
light
photosensitive
thin film
electrically connected
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PCT/CN2016/070745
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English (en)
French (fr)
Inventor
吴俊纬
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/127,159 priority Critical patent/US20170178556A1/en
Publication of WO2017008481A1 publication Critical patent/WO2017008481A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0814—Several active elements per pixel in active matrix panels used for selection purposes, e.g. logical AND for partial update
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes

Definitions

  • Embodiments of the present invention relate to a display device and an array substrate.
  • liquid crystal displays are a mainstream display product.
  • a liquid crystal display includes an array substrate and an opposite substrate (for example, a color filter substrate) disposed opposite to each other, and a liquid crystal disposed therebetween.
  • the display panel and the touch module can be integrated to obtain a touch display.
  • the device integrates the display panel and the photodetector to obtain a display device having a light detecting function and the like.
  • Embodiments of the present invention provide a display device and an array substrate to integrate a light detecting unit into a display device.
  • At least one embodiment of the present invention provides a display device having a light blocking region and a non-light blocking region and including a plurality of pixel units, corresponding to the plurality of pixel unit settings, and outputting electrical signals for the plurality of pixel units a circuit unit, and a light detecting unit including a photosensitive element and a switching element electrically connected to each other; the photosensitive element being disposed in the non-light-shielding region to sense light of a predetermined wavelength and generating a light detecting signal, the switching element being configured to An output of the light detecting signal generated by the photosensitive element may be controlled; the circuit unit is electrically connected to the switching element for controlling opening or closing of the switching element.
  • At least one embodiment of the present invention also provides a display device having a light shielding region and a non-light shielding region and including a plurality of pixel units, a common electrode circuit electrically connected to the plurality of pixel units, and light including a photosensitive element a detecting unit, the photosensitive element is disposed in the non-light-shielding region; the common electrode circuit is electrically connected to the photosensitive element, and is configured to control the photosensitive element to remain in a closed state.
  • At least one embodiment of the present invention also provides an array substrate having a light-shielding region and a non- a light-shielding region and including a plurality of pixel units, a plurality of signal input terminals electrically connected to the plurality of pixel units to be configured to provide electrical signals to the plurality of pixel units, and photosensitive elements and switching elements including electrical connections to each other Light detection unit.
  • the photosensitive element is disposed in the non-light-shielding region to sense light of a predetermined wavelength and generate a light detection signal; the switching element is configured to control an output of the light detection signal generated by the photosensitive element.
  • One of the plurality of signal input terminals is electrically connected to the switching element for controlling the opening or closing of the switching element by the electrical signal applied thereto.
  • FIG. 1 is a schematic top plan view of a display device according to a first embodiment of the present invention.
  • FIG. 2 is a schematic diagram of an equivalent circuit of a display device according to Embodiment 1 of the present invention.
  • IGZO indium gallium zinc oxide
  • FIG. 4 is a cross-sectional view of a display device according to a first embodiment of the present invention.
  • FIG. 5 is a schematic top plan view of a display device according to Embodiment 2 of the present invention.
  • FIG. 6 is a schematic diagram of an equivalent circuit of a display device according to Embodiment 2 of the present invention.
  • FIG. 7 is a schematic diagram of an equivalent circuit of an array substrate according to Embodiment 3 of the present invention.
  • the following embodiments of the present invention provide a solution for integrating a light detecting unit into a display device, which will be described in detail below.
  • the present embodiment provides a display device 100 having a light-shielding region and a non-light-shielding region, and includes a plurality of pixel units 140 corresponding to the plurality of pixel units 140 and for the plurality of
  • the pixel unit 140 outputs a circuit unit 120 that outputs an electrical signal (ie, the output electrical signal directly acts on the pixel unit 140), and a light detecting unit 110 that includes the photosensitive element 111 and the switching element 112 that are electrically connected to each other;
  • the photosensitive element 111 is disposed to be non-shielding Sensing a predetermined wavelength of light and generating a light detecting signal;
  • the switching element 112 is configured to control an output of the light detecting signal generated by the photosensitive element 111 from the output end 110a of the light detecting unit 110;
  • the circuit unit 120 and the switching element 112 are electrically A connection for controlling the opening or closing of the switching element 112.
  • the light detecting unit 110 when the circuit unit 120 controls the switching element 112 to be turned on, the light detecting unit 110 outputs a light detecting signal; when the circuit unit 120 controls the switching element 112 to be turned off, the light detecting unit 110 does not output the light detecting signal.
  • the light-shielding region and the non-light-shielding region may be light of a predetermined wavelength sensed by the photosensitive element 111, that is, the region irradiated with the light of the predetermined wavelength is a non-light-shielding region, and the region not illuminated is a light-shielding region. region.
  • the light-shielding region and the non-light-shielding region may be black matrix (Black Matrix) for shielding light disposed in the display device 100. 1 and not shown in FIG. 2, that is, a region of the display device corresponding to the black matrix is a light-shielding region, and other regions are non-light-shielding regions.
  • Black Matrix Black Matrix
  • This embodiment provides a way to integrate the light detecting unit into the display device for improving the integration of the light detecting unit with the display device.
  • the display device 100 has a display area 101 and a non-display area located around the display area 101, and the plurality of pixel units 140 are disposed in the display area 101.
  • the photosensitive element 111 can be set to non- In the display area, it is possible to prevent the photosensitive member 111 from affecting the aperture ratio of the display device.
  • the display device 100 may be a passive light-emitting display device (for example, a liquid crystal display device) provided with a backlight, or may be an active light-emitting display device (for example, an OLED (Organic Light-Emitting Diode) display device).
  • the pixel unit in the display area may be provided with a backlight by a backlight for display, or a self-illuminating light emitting unit may be disposed in the display area for display.
  • the photosensitive element 111 is disposed in the non-display area, and it is possible to avoid affecting the light emitted by the backlight or the light emitted by the light-emitting unit from affecting the ambient light of the photosensitive element 111 sensing a predetermined wavelength.
  • the black matrix generally includes a portion located in the display area and a portion located in the non-display area
  • the photosensitive element 111 may be disposed in the non-light-shielding region of the non-display area of the display device 100.
  • 1 and 2 exemplarily show the range of the display area 101 and the distribution of the circuit unit 120, but the embodiment of the present invention is not limited to the case shown in FIGS. 1 and 2.
  • the light-shielding region and the non-light-shielding region are for the display surface side of the display device 100.
  • the photosensitive element 111 is disposed at a position where the light of the backlight in the non-light-shielding region is not illuminated, to prevent the light of the backlight from affecting the ambient light of the photosensitive element 111.
  • the circuit unit 120 will be described in detail below in conjunction with the situation shown in FIG.
  • a plurality of pixel units 140 constitute a pixel unit array having a plurality of rows and columns
  • the circuit unit 120 may be a gate scanning circuit 121 (shown in FIG. 2) corresponding to each row of pixel units 140 or corresponding to each.
  • the data driving circuit 122 of the column pixel unit 140 may be electrically connected to the switching element 112 to control the opening and closing of the switching element 112.
  • the gate scanning circuit 121 sequentially controls the switching of the thin film transistors of each row of pixel cells (ie, progressive scanning) during the display time of one frame
  • the data driving circuit 122 controls the data voltage of each column of pixel cells during each scanning period.
  • the electrical signal output by the gate scan circuit 121 / data drive circuit 122 for the same row/column pixel unit is a pulse signal (ie, a discontinuous signal). Controlling the turning on and off of the switching element 112 by the pulse signal output from the gate scanning circuit 121 or the data driving circuit 122 allows the light detecting unit 110 to output the light detecting signal once every certain time.
  • the gate scanning circuit 121 may include a plurality of driving units G1, G2, G3, . . . Gm-1, Gm, Gm+1, and any one of the plurality of driving units may be electrically connected to the switching element 112, And a pulse signal can be output to control the opening or closing of the switching element 112.
  • the plurality of driving units G1, G2, G3, . . . Gm-1, Gm, Gm+1 may be divided into first driving units G1, G2, G3 Vietnamese corresponding to respective rows of the pixel unit 140 array. -1, Gm, and a second driving unit Gm+1 corresponding to the switching element 112.
  • the second driving unit Gm+1 By separately providing the second driving unit Gm+1 to the switching element 112, it is possible to avoid the load of the connected first driving unit caused by electrically connecting the switching element 112 to any one of the first driving units of the corresponding row of pixel units. Big problem.
  • the GOA (Gate Driver on Array) circuit technology is a commonly used gate scanning circuit technology.
  • the gate scanning circuit is directly fabricated on the array substrate of the display device, thereby eliminating the bonding area of the gate scanning circuit, saving peripheral wiring space, and reducing cost.
  • the GOA circuit is disposed, for example, on one side or both sides of the display area, and includes a plurality of array substrate row drive (GOA) circuit units, for example, connected in series, and an output end of each GOA circuit unit is connected, for example, to a gate line, and the gate line is connected.
  • GOA array substrate row drive
  • each GOA circuit unit is also connected to an input end of the next GOA circuit unit for turning on the next GOA circuit unit This makes it easy to implement progressive scan.
  • the gate scanning circuit 121 can adopt the above GOA circuit technology.
  • the gate scanning circuit 121 includes a plurality of driving units G1, G2, G3, . . . Gm-1, Gm.
  • Gm+1 is an array substrate row drive (GOA) circuit unit, and these GOA circuit units are connected in series with each other.
  • GOA array substrate row drive
  • the signal for controlling the switching element 112 in the gate scanning circuit 121 / data driving circuit 122 can be realized by using the original signal in the gate scanning circuit 121 / data driving circuit 122 or by additionally adding a signal.
  • the manner of controlling the opening or closing of the switching element 112 by using the original signal of the circuit may include, for example, but not limited to, the following two.
  • the gate scanning circuit 121 sequentially applies a scanning signal (pulse signal) to the gate lines GT (abbreviation of Gate) 1, GT2, GT3, . . . , GTm-1, GTm in one scanning process.
  • the GOA circuit unit corresponding to the last gate line GTm to which the scan signal is applied ie, an example of the first driving circuit unit described above, as shown by Gm in FIG. 2
  • An output signal of the GOA circuit unit is used as a control switch element The signal of the opening or closing of the piece 112.
  • the output of the GOA circuit unit is connected to the last gate line GTm and the switching element 112.
  • the GOA circuit unit corresponding to the switching element 112 may be added after the GOA circuit unit corresponding to the last gate line GTm, and the output of the GOA circuit unit is connected.
  • the switching element 112 has an output signal as a signal for controlling the opening or closing of the switching element 112.
  • the GOA circuit unit In the first mode, the GOA circuit unit not only drives its corresponding row of pixel units, but also drives the switching elements, so that the load thereof is large; the second mode can avoid the GOA connecting the switching elements 112 as compared with the first mode.
  • circuit unit shown in FIG. 2 and its position are for illustrative purposes only, but the embodiment of the present invention is not limited thereto.
  • the light detecting unit 110 may further include a capacitor 113 for storing charges generated by the light receiving element 111 due to light irradiation; in this case, the switching element 112 is configured to control the capacitor The release of 113 stored charge. That is, when the switching element 112 is turned off, the light detecting signal generated by the photosensitive element 111 is stored in the capacitor 113 as a charge; when the switching element 112 is turned on, the charge stored in the capacitor 113 is released, and the light detecting signal is discharged from the capacitor 113. It is transmitted to the switching element 112. For example, when the output end of the switching element 112 serves as the output end of the light detecting unit 110, a light detecting signal is output from the output end of the switching element 112.
  • a thin film transistor array is generally disposed in the display region 101, since the thin film transistor generally includes a plurality of conductive layers and at least one insulating layer, such as a gate metal layer, a source/drain metal layer, and is disposed between the gate metal layer and the source/drain metal layer. a gate insulating layer, and since the capacitor 113 may include two electrodes and an insulating layer disposed between the two electrodes, the capacitor 113 may be synchronized in the process of fabricating the two conductive layers and the insulating layer of the thin film transistor Formed to reduce the production process.
  • the display device 100 may further include: a photo detection signal output circuit 150 electrically connected to the output end 110a of the photo detecting unit 110.
  • the light detecting signal output circuit 150 is for providing an output interface for the light detecting signal sensed by the photosensitive element 111.
  • the light detecting signal output circuit 150 may include a driving IC (Integrated Circuit) 151 or a flexible printed circuit board (FPC) 152 for supplying an input signal to the display device 100, and the driving IC may be directed to the data driving circuit 122 and the gate scanning circuit. 121 provides a drive signal.
  • a driving IC Integrated Circuit
  • FPC flexible printed circuit board
  • 121 provides a drive signal.
  • Use display The original driving IC or the flexible printed circuit board provides an output interface for the light detecting signal, which can further improve the integration degree of the light detecting unit 110 and the display device 100.
  • the light detection signal output from the light detection signal output circuit 150 can be subjected to information such as light intensity after being processed by the signal processing circuit 160 as shown in FIG.
  • the signal processing circuit 160 may be a circuit commonly used by those skilled in the art, such as an amplifier and a processor connected to each other, and will not be described herein.
  • the photosensitive element 111 is an element that is sensitive to light.
  • the photosensitive element 111 may be a photosensitive thin film transistor or a photodiode.
  • the photosensitive element 111 adopts a thin film transistor, it can be fabricated synchronously with the thin film transistor in the display area of the display device 100, so that no additional manufacturing process or mask is needed, the manufacturing difficulty and cost can be reduced, and the The extent to which the light detecting unit is integrated into the display device.
  • the type of photosensitive thin film transistor can be selected according to actual needs.
  • the photosensitive thin film transistor may be an oxide thin film transistor sensitive to ultraviolet light (UV light) or an amorphous silicon thin film transistor sensitive to visible light (for example, light of a predetermined wavelength), or a thin film transistor sensitive to infrared rays or the like.
  • FIG. 3 is a graph of leakage current of an IGZO thin film transistor under different wavelengths of illumination.
  • UV ultraviolet
  • the leakage current of the IGZO thin film transistor exhibits a regular and significant change characteristic with changes in light intensity or UV wavelength. Therefore, an ultraviolet photodetector can be fabricated using an oxide thin film transistor which is relatively sensitive to UV light.
  • amorphous silicon thin film transistors are sensitive to visible light, visible light detectors can be fabricated using amorphous silicon thin film transistors.
  • the switching element 112 can employ a transistor, such as a thin film transistor, such that the switching element 112 can be fabricated in synchronization with the thin film transistor in the display area of the display device 100, thereby eliminating the need for additional fabrication processes or masks, reducing fabrication difficulty and Cost, and further increase the degree to which the light detecting unit is integrated into the display device.
  • a transistor such as a thin film transistor
  • the switching element 112 may employ an element that is insensitive to light to avoid interference with the output signal of the light detecting unit 110. Alternatively, the switching element 112 may also employ a switching device that is insensitive to light that is incident on the photosensitive element 111.
  • the photosensitive element 111 employs an oxide thin film transistor sensitive to UV light to sense UV light
  • the switching element 112 employs an amorphous silicon thin film transistor that is insensitive to UV light.
  • the switching element 112 When the switching element 112 is light-insensitive or irradiated to the photosensitive element 111 When the upper light reacts to an insensitive element, the switching element 112 may be disposed in a non-light-shielding region of the display device 100.
  • the photosensitive element 111 and the switching element 112 may be the same thin film transistor to achieve simultaneous fabrication and simplify the fabrication process.
  • both the photosensitive element 111 and the switching element 112 may employ an oxide thin film transistor or an amorphous silicon thin film transistor.
  • the switching element 112 uses the same thin film transistor as the photosensitive element 111, the switching element 112 can be disposed in the light shielding region of the display device 100 to avoid interference with the output signal of the light detecting unit 110.
  • the photosensitive element 111 and the switching element 112 are both thin film transistors, and the light detecting unit 110 includes a capacitor 113.
  • the present embodiment will be specifically described below in conjunction with the situation shown in FIG. 2.
  • the switching element 112 is a transistor including a gate 112c, a source 112a and a drain 112b, a gate 112c of the switching element 112, and a circuit unit (for example, a driving unit Gm+1 included in the gate scanning circuit 121). Electrically connected; the source 112a of the switching element 112 is electrically coupled to the output 111b of the photosensitive element 111.
  • the source and the drain are distinguished by the flow direction of the current, the inflow end of the current is the source, and the outflow end is the drain.
  • the photosensitive element 111 may be a photosensitive thin film transistor including a gate 111c, a source 111a, and a drain 111b; the source 112a of the switching element 112 is electrically connected to the drain 111b (output end) of the photosensitive thin film transistor.
  • the source and the drain are distinguished by the flow direction of the current, the inflow end of the current is the source, and the outflow end is the drain.
  • the light detecting unit 110 may further include a capacitor 113 having one end electrically connected to the drain 111b (output end) of the photosensitive thin film transistor and the other end electrically connected to the source 111a (input terminal) of the photosensitive thin film transistor.
  • the leakage current varies significantly with the wavelength of the incident light, as shown in the left part of each curve in FIG. 3, which facilitates detection of a specific wavelength.
  • the leakage current varies little with the wavelength of the incident light, as shown in the right part of each curve in FIG. 3, which is disadvantageous for detecting specific Wavelength of light.
  • a small V GS voltage signal can be applied to the photosensitive element 111 to be turned off when sensing light of a predetermined wavelength.
  • the display device 100 may further include a common electrode circuit 130 that is electrically connected to a common electrode in the pixel unit 140 and that supplies a continuous low voltage signal to the common electrode.
  • the signal of the common electrode circuit 130 can be used to control the photosensitive element 111 in the light detecting unit 110 to remain in the off state.
  • the common electrode circuit 130 is electrically connected to a plurality of pixel units (the connection relationship between them is not shown in FIG. 2), and is electrically connected to the gate 111c and the source 111a of the photosensitive thin film transistor as the photosensitive element 111,
  • the continuous V GS voltage signal is supplied to the photosensitive member 111 so that the photosensitive member 111 can continuously sense light of a predetermined wavelength and remain in a closed state.
  • the common electrode circuit 130 includes a common electrode line that is electrically connected to the photosensitive element 111.
  • the common electrode line is electrically connected to the photosensitive element 111, and the original signal of the common electrode circuit 130 can be directly used without separately setting a signal.
  • the working process of the light detecting unit 110 includes: the photosensitive thin film transistor 111 (for example, an example of a photosensitive element) is disposed in a non-light-shielding region of the display device 100, and when light is irradiated to the photosensitive device On the thin film transistor 111, the photosensitive thin film transistor 111 generates a photodetection signal.
  • the photosensitive thin film transistor 111 for example, an example of a photosensitive element
  • the switching transistor 112 (an example of the switching element) is in an off state under the control of the gate scanning circuit 121, the capacitor 113 is charged, thereby sensitizing The photodetection signal generated by the thin film transistor 111 is stored in the capacitor 113; when the switching transistor is turned on under the control of the gate scanning circuit 121, the capacitor 113 is discharged, so that the photodetection signal is transmitted to the source 112a of the switching transistor 112 and from the switching transistor The drain 112b of 112 is output.
  • the photodetection signal output circuit 150 may be electrically connected to the drain 112b of the switching element 112 (i.e., the output of the photodetecting unit 110).
  • the source 112a of the switching element 112 can be electrically connected to the output of the photodiode.
  • the light detecting unit 110 includes one end of the capacitor 113 electrically connected to the output end of the photodiode and the other end electrically connected to the input end of the photodiode.
  • the display device 100 may further include: a polarizer 40, which may be disposed on the illumination side of the photosensitive element 111, and is perpendicular to the display device 100. In the planar direction, the photosensitive element 111 and the polarizer 40 have no overlapping regions. This can prevent the polarizer 40 from affecting the light irradiated onto the photosensitive member 111.
  • a polarizer 40 which may be disposed on the illumination side of the photosensitive element 111, and is perpendicular to the display device 100. In the planar direction, the photosensitive element 111 and the polarizer 40 have no overlapping regions. This can prevent the polarizer 40 from affecting the light irradiated onto the photosensitive member 111.
  • polarizing plate 50 disposed opposite to the polarizer 40 is usually disposed in the display device.
  • the display device 100 may include an array substrate 10 and a counter substrate 20, and the light detecting unit 110 may be disposed on the array substrate 10 or the opposite substrate 20.
  • the array substrate may be an array substrate used in a liquid crystal display device, or may be an OLED array substrate or the like; for example, the opposite substrate may be a color film substrate provided with a black matrix BM and a color filter layer, and a color filter.
  • the light layer typically includes a red color filter R, a green color filter G, and a blue color filter B.
  • the display device 100 may also include the array substrate 10 and does not include the opposite substrate 20, in which case the light detecting unit 110 is disposed on the array substrate 10.
  • the thin film transistor array is disposed on the array substrate, when the photosensitive element 111 and the switching element 112 are both fabricated by using a thin film transistor, the light detecting unit 110 is disposed on the array substrate 10, and can be formed in the process of fabricating the thin film transistor on the array substrate. Element 111 and switching element 112, thereby saving manufacturing processes.
  • the display device 100 further includes a touch panel 30 , and the touch panel 30 includes a touch area 31 corresponding to a plurality of pixel units (not shown in FIG. 4 ), corresponding to the pixel unit and configured to be
  • the circuit unit 120 that supplies the touch scan signal to the touch panel 30 is also configured to control the opening and closing of the switching element 112.
  • the touch panel 30 can be disposed on the side of the opposite substrate 20 away from the array substrate 10, and is bonded to the opposite substrate 20 by, for example, an optical adhesive 32, as shown in FIG. 4; or the touch panel 30 can also be It is the counter substrate 20 or the array substrate 10.
  • the display device 100 provided in this embodiment may be: a liquid crystal panel, an electronic paper, an OLED panel, a touch display panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigation device, and the like. Or parts.
  • the present embodiment provides a display device 200 that differs from the display device 100 provided in the first embodiment in that the light detecting unit does not include the control light detecting signal output from the output end of the light detecting unit.
  • the switching element, and thus the light detecting signal can be continuously outputted instead of intermittently outputting; and since the light detecting signal can be continuously output, the light detecting unit does not need to be disposed between the input end and the output end of the photosensitive element for storage A capacitor that charges the photosensitive element.
  • the display device 200 has a light shielding area and a non-light shielding area, and includes a plurality of pixel units 240 and a common electrode circuit 230 electrically connected to the plurality of pixel units 240 (the common electrode circuit is not shown in the drawing).
  • the connection relationship with the pixel unit), and the light detecting unit 210 including the photosensitive element 211, the photosensitive element 211 is disposed in the non-light-shielding region; the common electrode circuit 230 is electrically connected to the photosensitive element 211, and is configured to control the photosensitive element 211 to remain closed. .
  • the photosensitive element 211 may be a photosensitive thin film transistor such as an oxide thin film transistor or an amorphous silicon thin film transistor.
  • the common electrode circuit 230 may be connected to the gate 211c and the source 211a of the photosensitive thin film transistor to keep the photosensitive thin film transistor in a closed state, so that when light is irradiated to the photosensitive thin film transistor, The photosensitive thin film transistor can generate a large leak current (ie, a light detecting signal).
  • the common electrode circuit 230 may include a common electrode line that may be electrically connected to the gate 211c and the source 211a of the photosensitive thin film transistor.
  • the display device 200 may further include a light detecting signal output circuit 250 electrically connected to the output end 210a of the light detecting unit 210 for providing an output interface for the light detecting signal sensed by the photosensitive element 211.
  • the light detecting signal output circuit 250 may include a driving IC (Integrated Circuit) 251 or a flexible printed circuit board (FPC) 252 for supplying an input signal to the display device 200, and the driving IC may provide the data driving circuit and the gate scanning circuit. Drive signal.
  • the output interface of the optical detection signal is provided by the original driving IC or the flexible printed circuit board of the display device 200, and the degree of integration of the light detecting unit 210 and the display device 200 can be further improved.
  • the light intensity output from the light detection signal output circuit 250 can be obtained by the subsequent signal processing circuit 260.
  • the signal processing circuit 260 may employ a circuit commonly used by those skilled in the art such as an amplifier and a processor connected to each other, and details are not described herein.
  • the present embodiment provides an array substrate 10 that can be applied to the display device of the first embodiment.
  • the array substrate 10 has a light shielding region and a non-light shielding region, and includes: a plurality of pixel units 140. a plurality of signal input terminals 121a electrically connected to the plurality of pixel units 140 to be configured to supply electrical signals to the plurality of pixel units 140, and a light detecting unit 110 including the photosensitive elements 111 and the switching elements 112 electrically connected to each other, the photosensitive elements 111
  • the light is detected in a non-light-shielding region to sense light of a predetermined wavelength and generates a light detection signal, and the switching element 112 is configured to control an output of the light detection signal generated by the photosensitive element 111.
  • One of the plurality of signal input terminals is electrically connected to the switching element 112 and is used to control the opening or closing of the switching element 112 by the electrical signal applied thereto.
  • the plurality of signal input terminals 121a are gate scan signal input terminals or data signal input terminals.
  • the array substrate 10 may be provided with a gate scanning circuit 121 or a data driving circuit 122.
  • the signal input terminal 121a is electrically connected to the gate scanning circuit 121 or the data driving circuit 122; correspondingly, the signal input terminal 121a
  • the applied electrical signal is a signal output by the gate scanning circuit 121 or the data driving circuit 122.
  • the array substrate 10 may adopt a GOA circuit technology.
  • the array substrate 100 may further include: a plurality of array substrate row driving circuit units G1, G2, G3, . . . Gm-1, Gm, and these array substrate row driving circuits
  • the units are connected in series to each other and electrically connected to the plurality of signal input terminals 121a.
  • one of the plurality of signal input terminals 121a is electrically connected to the switching element 112.
  • the array substrate 10 may further include a light detecting signal output terminal 150a.
  • the light detecting signal output terminal 150a may be electrically connected to a driving IC (Integrated Circuit) or a flexible printed circuit board (FPC) for supplying an input signal to the array substrate 10.
  • the output interface of the optical detection signal is provided by the original driving IC or the flexible printed circuit board of the display device 100, and the degree of integration of the light detecting unit 110 with the array substrate 10 can be further mentioned.
  • the switching element 112 may be a transistor, and the photosensitive element 111 may be a photosensitive thin film transistor or a photodiode.
  • the array substrate 10 may further include a common electrode signal input terminal 130a, and the common electrode signal input terminal 130a is electrically connected to the gate 111c and the source 111a of the photosensitive thin film transistor, and the signal of the output thereof is used.
  • the photosensitive element 111 can continuously sense light of a predetermined wavelength and remain in a closed state to be A large leakage current can be generated when the predetermined wavelength of light is irradiated.
  • the array substrate 10 may include a common electrode circuit 130 (for example, a common electrode line) electrically connected to the common electrode signal input terminal 130a.
  • a common electrode circuit 130 for example, a common electrode line
  • the array substrate provided in this embodiment can be applied to the display device 100 as described in the first embodiment.
  • the components in the array substrate reference may be made to the related description in the first embodiment, and the repeated description is omitted.

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Abstract

一种显示装置和阵列基板，该显示装置(100)包括像素单元(140)、针对所述像素单元(140)输出电信号的电路单元(120)、以及包括彼此电连接的感光元件(111)和开关元件(112)的光探测单元(110)；所述感光元件(111)设置于所述显示装置(100)的非遮光区域内以感测预定波长的光并产生光探测信号，所述开关元件(112)配置为可控制所述光探测信号的输出；所述电路单元(120)与所述开关元件(112)电连接，用于控制所述开关元件(112)的开启或关闭。该方案可将光探测单元(110)整合到显示装置(100)中。

Description

显示装置和阵列基板 技术领域
本发明实施例涉及一种显示装置和阵列基板。
背景技术
目前，液晶显示器是一种主流的显示产品。通常，液晶显示器包括相对设置的阵列基板和对置基板(例如彩膜基板)以及设置于二者之间的液晶。
随着显示技术的发展，将显示面板与其他功能模块整合在一起以形成具有相应功能的显示装置逐渐成为一种新的发展趋势，例如：可以将显示面板与触控模块进行整合得到触控显示装置，将显示面板与光探测器进行整合得到具有光探测功能的显示装置等。
发明内容
本发明实施例提供一种显示装置和阵列基板，以将光探测单元整合到显示装置中。
本发明的至少一个实施例提供了一种显示装置，其具有遮光区域和非遮光区域并且包括多个像素单元、对应于所述多个像素单元设置且针对所述多个像素单元输出电信号的电路单元、以及包括彼此电连接的感光元件和开关元件的光探测单元；所述感光元件设置于所述非遮光区域内以感测预定波长的光并产生光探测信号，所述开关元件配置为可控制所述感光元件产生的光探测信号的输出；所述电路单元与所述开关元件电连接，用于控制所述开关元件的开启或关闭。
本发明的至少一个实施例还提供了一种显示装置，其具有遮光区域和非遮光区域并且包括多个像素单元、与所述多个像素单元电连接的公共电极电路、以及包括感光元件的光探测单元，所述感光元件设置于所述非遮光区域内；所述公共电极电路与所述感光元件电连接，配置为可控制所述感光元件保持关闭状态。
本发明的至少一个实施例还提供了一种阵列基板，其具有遮光区域和非 遮光区域并且包括多个像素单元、与所述多个像素单元电连接以配置来为所述多个像素单元提供电信号的多个信号输入端子、以及包括彼此电连接的感光元件和开关元件的光探测单元。所述感光元件设置于所述非遮光区域内以感测预定波长的光并产生光探测信号；所述开关元件配置为可控制所述感光元件产生的光探测信号的输出。所述多个信号输入端子之一与所述开关元件电连接，用于通过其上施加的所述电信号控制所述开关元件的开启或关闭。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明实施例一提供的一种显示装置的俯视示意图；
图2为本发明实施例一提供的一种显示装置的等效电路示意图；
图3为一种IGZO(氧化铟镓锌)薄膜晶体管在不同波长光照下的漏电流曲线图；
图4为本发明实施例一提供的一种显示装置的剖视示意图；
图5为本发明实施例二提供的一种显示装置的俯视示意图；
图6为本发明实施例二提供的一种显示装置的等效电路示意图；
图7为本发明实施例三提供的一种阵列基板的等效电路示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制， 而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
本发明的以下实施例提供了一种将光探测单元整合到显示装置中的方案，下面进行详细介绍。
实施例一
如图1和图2所示，本实施例提供了一种显示装置100，其具有遮光区域和非遮光区域，并包括多个像素单元140、对应于多个像素单元140设置且针对该多个像素单元140输出电信号(即输出的电信号直接作用于像素单元140)的电路单元120、以及包括彼此电连接的感光元件111和开关元件112的光探测单元110；感光元件111设置于非遮光区域内以感测预定波长的光并产生光探测信号；开关元件112配置为可控制感光元件111产生的光探测信号从光探测单元110的输出端110a的输出；电路单元120与开关元件112电连接，用于控制开关元件112的开启或关闭。也就是说，当电路单元120控制开关元件112开启时，光探测单元110输出光探测信号；当电路单元120控制开关元件112关闭时，光探测单元110不输出光探测信号。
需要说明的是，遮光区域和非遮光区域可以是针对感光元件111所感测的预定波长的光而言，即，该预定波长的光照射到的区域为非遮光区域，照射不到的区域为遮光区域。
例如，当显示装置应用于感测显示装置所处的外界环境中预定波长的光时，遮光区域和非遮光区域可以是针对显示装置100中设置的用于遮挡光线的黑矩阵(Black Matrix，图1和图2中未示出)而言，即显示装置的对应于黑矩阵的区域为遮光区域，其他区域为非遮光区域。
该实施例提供了一种将光探测单元整合到显示装置中的方式，用于提高光探测单元与显示装置的整合度。
显示装置100具有显示区101和位于显示区101周边的非显示区，上述多个像素单元140设置于显示区101中。例如，感光元件111可以设置于非 显示区中，这样可以避免感光元件111影响显示装置的开口率。
在本实施例中，显示装置100可以为设置有背光源的被动发光的显示装置(例如液晶显示装置)中，也可以为主动发光的显示装置(例如OLED(Organic Light-Emitting Diode)显示装置)，相应地，显示区内的像素单元可以通过背光源提供背光以进行显示，或在显示区内可以设置有自发光的发光单元以进行显示。在这种情况下，将感光元件111设置于非显示区中，可以避免影响背光源发出的光或发光单元发出的光影响感光元件111感测预定波长的外界环境光。
需要说明的是，由于黑矩阵通常包括位于显示区的部分和位于非显示区的部分，因此，感光元件111可以设置于显示装置100的非显示区的非遮光区域内。图1和图2仅示例性地示出显示区101的范围及电路单元120的分布情况，但本发明实施例不限于图1和图2所示的情形。
此外，遮光区域和非遮光区域是针对显示装置100的显示面一侧而言的。在设置有背光源的被动发光的显示器中，感光元件111设置于非遮光区域中的背光源的光照射不到的位置，以避免背光源的光对感光元件111探测外界环境光造成影响。
下面结合图2所示的情形对电路单元120进行详细说明。
例如，如图2所示，多个像素单元140构成具有多行和多列的像素单元阵列，电路单元120可以为对应各行像素单元140的栅扫描电路121(如图2所示)或对应各列像素单元140的数据驱动电路122。也就是说，栅扫描电路121或数据驱动电路122可以与开关元件112电连接以控制开关元件112的开启和关闭。通常，在一帧画面的显示时间内，栅扫描电路121依次控制各行像素单元的薄膜晶体管的开关(即逐行扫描)，而数据驱动电路122在每行扫描期间控制各列像素单元的数据电压的输入，因此，栅扫描电路121/数据驱动电路122针对同一行/列像素单元输出的电信号为脉冲信号(即不连续信号)。利用栅扫描电路121或数据驱动电路122输出的脉冲信号控制开关元件112的开启和关闭可以使光探测单元110每隔一定时间输出一次光探测信号。
例如，栅扫描电路121可以包括多个驱动单元G1、G2、G3…..Gm-1、Gm、Gm+1，所述多个驱动单元中的任意一个可以与开关元件112电连接， 并且可输出脉冲信号以控制开关元件112的开启或关闭。
例如，多个驱动单元G1、G2、G3…..Gm-1、Gm、Gm+1可以被划分为与像素单元140阵列的各行分别对应的第一驱动单元G1、G2、G3…..Gm-1、Gm，以及与开关元件112对应的第二驱动单元Gm+1。通过对开关元件112单独设置第二驱动单元Gm+1的方式，可以避免将开关元件112与对应各行像素单元的第一驱动单元中的任意一个电连接造成的所连接的第一驱动单元负载较大的问题。
GOA(Gate Driver on Array,阵列基板行驱动)电路技术是目前常用的一种栅扫描电路技术。在该技术中，栅扫描电路被直接制作在显示装置的阵列基板上，从而可以省掉栅扫描电路的邦定(Bonding)区域、节省外围布线空间并降低成本。通常，GOA电路例如设置在显示区域的一侧或两侧，包括多个例如串联的阵列基板行驱动(GOA)电路单元，每个GOA电路单元的输出端连接例如一条栅线，该栅线连接到显示区中的一行像素单元，即每个GOA电路单元对应一行像素；另外，每一GOA电路单元的输出端还连接到下一GOA电路单元的输入端，用以开启该下一GOA电路单元，由此便于实现逐行扫描。
本实施例提供的显示装置100中，栅扫描电路121可以采用上述GOA电路技术，在这种情况下，栅扫描电路121包括的多个驱动单元G1、G2、G3…..Gm-1、Gm、Gm+1为阵列基板行驱动(GOA)电路单元，这些GOA电路单元彼此串联。
栅扫描电路121/数据驱动电路122中用于控制开关元件112的信号可以利用栅扫描电路121/数据驱动电路122中原有的信号或通过另外增加信号的方式实现。
例如，栅扫描电路121为GOA电路时，利用电路原有的信号控制开关元件112的开启或关闭的方式例如可以包括，但不限于，以下两种。
第一种，假设在一次扫描过程中，栅扫描电路121依次向栅线GT(Gate的缩写)1、GT2、GT3…..GTm-1、GTm中施加扫描信号(脉冲信号)，在这种情况下，可以将最后一条被施加扫描信号的栅线GTm所对应的GOA电路单元(即上述第一驱动电路单元的一个示例，如图2中的Gm所示)与开关元件112直接连接，将该GOA电路单元的一个输出信号作为控制开关元 件112的开启或关闭的信号。在这种情况下，该GOA电路单元的输出端连接最后一条栅线GTm和开关元件112。
第二种，可以在最后一条栅线GTm对应的GOA电路单元之后增加对应开关元件112的GOA电路单元(即上述第二驱动电路单元Gm+1的一个示例)，该GOA电路单元的输出端连接开关元件112，其输出信号作为控制开关元件112的开启或关闭的信号。
在第一种方式中，GOA电路单元不但驱动其对应的一行像素单元，而且驱动开关元件，因而其负载较大；第二种方式与第一种方式相比，可以避免连接开关元件112的GOA电路单元的负载较大的问题。
需要说明的是，图2所示的电路单元的类型及其位置仅用于示例性说明，但本发明实施例不限于此。
在上述任一示例的基础上，例如，光探测单元110还可以包括电容器113，电容器113用于存储感光元件111由于受光照射而产生的电荷；在这种情况下，开关元件112配置为控制电容器113所存储的电荷的释放。也就是说，当开关元件112关闭时，感光元件111产生的光探测信号以电荷形式存储到电容器113中；当开关元件112开启时，电容器113所存储的电荷释放出去，光探测信号从电容器113向开关元件112传输。例如，当开关元件112的输出端作为光探测单元110的输出端时，光探测信号从开关元件112的输出端输出。
在显示区101中通常设置有薄膜晶体管阵列，由于薄膜晶体管一般包括多层导电层和至少一层绝缘层，例如栅金属层、源漏金属层以及设置在栅金属层和源漏金属层之间的栅绝缘层，并且由于电容器113可以包括两个电极和设置在这两个电极之间的绝缘层，因此，电容器113可以在制作薄膜晶体管的两层导电层和一层绝缘层的过程中同步形成，以减少制作流程。
如图1所示，显示装置100还可以包括：光探测信号输出电路150，光探测信号输出电路150与光探测单元110的输出端110a电连接。光探测信号输出电路150用于为感光元件111感测到的光探测信号提供输出接口。
例如，光探测信号输出电路150可以包括用于向该显示装置100提供输入信号的驱动IC(Integrated Circuit)151或柔性印刷电路板(FPC)152，驱动IC可以向数据驱动电路122和栅扫描电路121提供驱动信号。利用显示装 置100原有的驱动IC或柔性印刷电路板为光探测信号提供输出接口，可以进一步提高光探测单元110与显示装置100的整合程度。
例如，从光探测信号输出电路150输出的光探测信号经后续如图2所示的信号处理电路160处理之后可以得到光强度等信息。信号处理电路160可以采用相互连接的放大器和处理器等本领域技术人员常用的电路，此处不做赘述。
感光元件111为对光照反应灵敏的元件。例如，感光元件111可以为感光薄膜晶体管或光电二极管。当感光元件111采用薄膜晶体管时，其可以与显示装置100的显示区中的薄膜晶体管同步制作，这样不需增加额外的制作工艺或掩膜板，可以降低制作难度和成本，而且进一步提高了将光探测单元整合到显示装置中的程度。
感光薄膜晶体管的类型可以根据实际需要进行选择。例如，感光薄膜晶体管可以为对紫外光(UV光)敏感的氧化物薄膜晶体管或对可见光(例如预定波长的光)敏感的非晶硅薄膜晶体管，或对红外线敏感的薄膜晶体管等。
例如，图3为一种IGZO薄膜晶体管在不同波长光照下的漏电流曲线图。由图3可知，对于400nm以下的紫外(UV)光，该IGZO薄膜晶体管的漏电流随着光强度或UV波长的变化呈规则的明显变化特性。因此，可以利用氧化物薄膜晶体管对UV光比较敏感的特性制作紫外光探测器。类似地，由于非晶硅薄膜晶体管对可见光比较敏感，因此可利用非晶硅薄膜晶体管制作可见光探测器。
例如，开关元件112可以采用晶体管，例如薄膜晶体管，这样，开关元件112可以与显示装置100的显示区中的薄膜晶体管同步制作，从而不需增加额外的制作工艺或掩膜板，降低制作难度和成本，而且进一步提高了将光探测单元整合到显示装置中的程度。
开关元件112可以采用对光不敏感的元件，以避免对光探测单元110的输出信号造成干扰。或者，开关元件112也可以采用对照射至感光元件111上的光反应不灵敏的开关器件。例如，感光元件111采用对UV光敏感的氧化物薄膜晶体管以感测UV光，开关元件112采用对UV光不敏感的非晶硅薄膜晶体管。
当开关元件112采用对光不敏感的元件或者采用对照射至感光元件111 上的光反应不灵敏的元件时，开关元件112可以设置于显示装置100的非遮光区域内。
或者，感光元件111和开关元件112可以为同一种薄膜晶体管，以实现二者的同步制作并简化制作工艺。例如，感光元件111和开关元件112都可以采用氧化物薄膜晶体管或非晶硅薄膜晶体管。开关元件112采用与感光元件111一样的薄膜晶体管时，开关元件112可以设置于显示装置100的遮光区域内，以避免对光探测单元110的输出信号造成干扰。
在图2所示实施例的一个示例中，感光元件111和开关元件112均为薄膜晶体管，并且光探测单元110包括电容器113。下面结合图2所示的情形具体描述本实施例。
如图2所示，开关元件112为晶体管，其包括栅极112c、源极112a和漏极112b，开关元件112的栅极112c与电路单元(例如栅扫描电路121包括的驱动单元Gm+1)电连接；开关元件112的源极112a与感光元件111的输出端111b电连接。这里，源极和漏极是按电流的流动方向进行区分的，电流的流入端为源极，流出端为漏极。
例如，感光元件111可以为感光薄膜晶体管，包括栅极111c、源极111a和漏极111b；开关元件112的源极112a与感光薄膜晶体管的漏极111b(输出端)电连接。这里，源极和漏极是按电流的流动方向进行区分的，电流的流入端为源极，流出端为漏极。
例如，光探测单元110还可以包括电容器113，电容器113的一端与感光薄膜晶体管的漏极111b(输出端)电连接，另一端与感光薄膜晶体管的源极111a(输入端)电连接。
通常，感光薄膜晶体管在关闭状态(即截止状态)下照光时，漏电流随着入射光的波长的不同有明显变化，如图3中每条曲线的左侧部分所示，利于检测特定波长的光；感光薄膜晶体管在开启状态(即导通状态)下照光时，漏电流随着入射光的波长的不同变化较小，如图3中每条曲线的右侧部分所示，不利于检测特定波长的光。因此，为了提高光探测单元110探测的准确度，当感光元件111采用感光薄膜晶体管时，可以对感光元件111施加较小的VGS电压信号以使其在感测预定波长的光时处于关闭状态。在此基础上，还可以将感光元件111设置为持续感测预定波长的光，在这种情况下，需要 对感光元件111施加连续信号。
通常，显示装置100还可以包括公共电极电路130，公共电极电路130与像素单元140中的公共电极电连接，并且为公共电极提供连续的低电压信号。
因此，为了进一步提高光探测单元110与显示装置100的整合程度，可以利用公共电极电路130的信号控制光探测单元110中的感光元件111保持关闭状态。例如，公共电极电路130与多个像素单元电连接(图2中未示出二者之间的连接关系)，并且与作为感光元件111的感光薄膜晶体管的栅极111c和源极111a电连接，以向感光元件111提供连续的VGS电压信号，从而使感光元件111可以持续感测预定波长的光并且保持在关闭状态。
例如，公共电极电路130包括公共电极线，该公共电极线与感光元件111电连接。将公共电极线与感光元件111电连接，可以直接利用公共电极电路130原有的信号，不需要另外设置信号。
以图2所示的显示装置100为例，光探测单元110的工作过程包括：感光薄膜晶体管111(例如感光元件的一个示例)由于设置于显示装置100的非遮光区域，当有光线照射到感光薄膜晶体管111上时，感光薄膜晶体管111产生光探测信号，此时，若开关晶体管112(开关元件的一个示例)在栅扫描电路121的控制下处于断开状态，则电容器113进行充电，从而感光薄膜晶体管111产生的光探测信号存储到电容器113中；当开关晶体管在栅扫描电路121的控制下导通时，电容器113放电，从而光探测信号向开关晶体管112的源极112a传输并从开关晶体管112的漏极112b输出。
例如，当显示装置100包括上述光探测信号输出电路150时，光探测信号输出电路150可以与开关元件112的漏极112b(即光探测单元110的输出端)电连接。
当感光元件111为光电二极管且开关元件112为晶体管时，开关元件112的源极112a可以与光电二极管的输出端电连接。
当感光元件111为光电二极管时，光探测单元110包括的电容器113的一端与光电二极管的输出端电连接，另一端与光电二极管的输入端电连接。
在上述任一示例的基础上，如图4所示，显示装置100还可以包括：偏光片40，其可以设置于感光元件111的照光侧，并且沿垂直于显示装置100 的平面方向，感光元件111与偏光片40无交叠区域。这样可以避免偏光片40对照射到感光元件111上的光造成影响。
当然，显示装置中通常还设置有与偏光片40相对设置的另一偏光片50。
例如，显示装置100可以包括阵列基板10和对置基板20，光探测单元110可以设置于阵列基板10或对置基板20上。例如，阵列基板可以为用于液晶显示装置中的阵列基板，也可以为OLED阵列基板等；例如，对置基板可以为彩膜基板，其上设置有黑矩阵BM和彩色滤光层，彩色滤光层通常包括红色滤光片R、绿色滤光片G和蓝色滤光片B。
例如，显示装置100也可以包括阵列基板10且不包括对置基板20，在这种情况下，光探测单元110设置于阵列基板10上。
由于阵列基板上设置有薄膜晶体管阵列，当感光元件111和开关元件112都采用薄膜晶体管制作时，光探测单元110设置于阵列基板10上，可以在制作阵列基板上的薄膜晶体管的过程中形成感光元件111和开关元件112，从而节省制作工艺。
如图4所示，显示装置100还可以包括触控面板30，触控面板30包括对应于多个像素单元(图4中未示出)的触控区域31，与像素单元对应并且配置为可向触控面板30提供触控扫描信号的电路单元120还配置为控制开关元件112的开启和关闭。
触控面板30可以为设置在对置基板20的远离阵列基板10一侧，并且通过例如光学胶32与对置基板20贴合在一起，如图4所示；或者，触控面板30也可以为对置基板20或阵列基板10。
需要说明的是，附图中各结构的尺寸和形状不反映真实比例，目的只是示意说明本实施例的内容。并且，显示装置100包括的其他结构可以采用本领域技术人员常用的设置，此处不做赘述。
本实施例提供的显示装置100可以为：液晶面板、电子纸、OLED面板、触控显示面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
实施例二
本实施例提供了一种显示装置200，其与实施例一提供的显示装置100的区别在于光探测单元不包括控制光探测信号从光探测单元的输出端输出的 开关元件，因而光探测信号可以连续地输出而不是间断性地输出；并且，由于光探测信号可以连续地输出，因而光探测单元不需要在感光元件的输入端和输出端之间设置用于存储感光元件所产生的电荷的电容器。
如图5和图6所示，该显示装置200具有遮光区域和非遮光区域，包括多个像素单元240、与多个像素单元240电连接的公共电极电路230(图中未示出公共电极电路与像素单元的连接关系)、以及包括感光元件211的光探测单元210，感光元件211设置于非遮光区域内；公共电极电路230与感光元件211电连接，配置为可控制感光元件211保持关闭状态。
例如，感光元件211可以为感光薄膜晶体管，如氧化物薄膜晶体管或非晶硅薄膜晶体管等。
例如，当感光元件211为感光薄膜晶体管时，公共电极电路230可以与感光薄膜晶体管的栅极211c和源极211a连接，以使感光薄膜晶体管保持关闭状态，从而当光照射到感光薄膜晶体管时，感光薄膜晶体管可以产生较大的漏电流(即光探测信号)。
例如，公共电极电路230可以包括公共电极线，该公共电极线可以与感光薄膜晶体管的栅极211c和源极211a电连接。
如图5所示，显示装置200还可以包括光探测信号输出电路250，其与光探测单元210的输出端210a电连接，用于为感光元件211感测到的光探测信号提供输出接口。
例如，光探测信号输出电路250可以包括用于向该显示装置200提供输入信号的驱动IC(Integrated Circuit)251或柔性印刷电路板(FPC)252，驱动IC可以向数据驱动电路和栅扫描电路提供驱动信号。利用显示装置200原有的驱动IC或柔性印刷电路板为光探测信号提供输出接口，可以进一步提高光探测单元210与显示装置200的整合程度。
例如，从光探测信号输出电路250输出的光探测信号经后续信号处理电路260处理之后可以得到光强度。信号处理电路260可以采用相互连接的放大器和处理器等本领域技术人员常用的电路，此处不做赘述。
本实施例中各部件的设置可参考实施例中的相关描述，重复之处不再赘述。
实施例三
本实施例提供了一种可以应用于实施例一所述的显示装置中的阵列基板10，如图7所示，该阵列基板10具有遮光区域和非遮光区域，包括：多个像素单元140，与多个像素单元140电连接以配置为向多个像素单元140提供电信号的多个信号输入端子121a，以及包括彼此电连接的感光元件111和开关元件112的光探测单元110，感光元件111设置于非遮光区域内以感测预定波长的光并产生光探测信号，开关元件112配置为可控制感光元件111产生的光探测信号的输出。多个信号输入端子之一与开关元件112电连接并且用于通过其上施加的所述电信号控制开关元件112的开启或关闭。
例如，多个信号输入端子121a为栅扫描信号输入端或数据信号输入端。例如，阵列基板10上可以设置有栅扫描电路121或数据驱动电路122，在这种情况下，信号输入端子121a与栅扫描电路121或数据驱动电路122电连接；相应地，信号输入端子121a上施加的电信号为栅扫描电路121或数据驱动电路122输出的信号。
阵列基板10可以采用GOA电路技术，在这种情况下，阵列基板100还可以包括：多个阵列基板行驱动电路单元G1、G2、G3…..Gm-1、Gm，这些阵列基板行驱动电路单元彼此串联且与多个信号输入端子121a对应地电连接。在这种情况下，多个信号输入端子121a之一与开关元件112电连接可参考实施例一中的相关描述，重复之处此处不再赘述。
例如，阵列基板10还可以包括光探测信号输出端子150a。为进一步提高光探测单元110与阵列基板10的整合程度，光探测信号输出端子150a可以与用于向该阵列基板10提供输入信号的驱动IC(Integrated Circuit)或柔性印刷电路板(FPC)电连接。利用显示装置100原有的驱动IC或柔性印刷电路板为光探测信号提供输出接口，可以进一步提到光探测单元110与阵列基板10的整合程度。
与实施例一类似，开关元件112可以为晶体管，感光元件111可以为感光薄膜晶体管或光电二极管。
当感光元件111为感光薄膜晶体管时，阵列基板10还可以包括公共电极信号输入端子130a，公共电极信号输入端子130a与感光薄膜晶体管的栅极111c和源极111a电连接，并且其输出的信号用于控制感光元件111的关闭状态，使感光元件111可以持续感测预定波长的光并且保持关闭状态以在被 该预定波长的光照射时可以产生较大的漏电流。
例如，阵列基板10可以包括公共电极电路，该公共电极电路130(例如公共电极线)与公共电极信号输入端子130a电连接。
由于本实施例提供的阵列基板可以应用于如实施例一所述的显示装置100中，该阵列基板中各部件的实施可参考实施例一中的相关描述，重复之处不再赘述。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2015年7月10日递交的中国专利申请第201510405351.5号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (28)

  1. 一种显示装置，具有遮光区域和非遮光区域，包括：
    多个像素单元；
    电路单元，对应于所述多个像素单元设置且针对所述多个像素单元输出电信号；以及
    光探测单元，包括彼此电连接的感光元件和开关元件，
    其中，所述感光元件设置于所述非遮光区域内以感测预定波长的光并产生光探测信号，所述开关元件配置为可控制所述感光元件产生的光探测信号的输出；
    所述电路单元与所述开关元件电连接，用于控制所述开关元件的开启或关闭。
  2. 如权利要求1所述的显示装置，其中，所述显示装置具有显示区和设置于所述显示区周边的非显示区，所述显示区中设置有所述多个像素单元，所述感光元件设置于所述非显示区域中。
  3. 如权利要求1或2所述的显示装置，其中，
    所述多个像素单元构成具有多行和多列的像素单元阵列，所述电路单元为对应各行像素单元的栅扫描电路或对应各列像素单元的数据驱动电路。
  4. 如权利要求3所述的显示装置，其中，所述栅扫描电路包括多个驱动单元，所述多个驱动单元中的任意一个与所述开关元件电连接，并且可输出脉冲信号以控制所述开关元件的开启或关闭。
  5. 如权利要求4所述的显示装置，其中，所述多个驱动单元包括与所述像素单元阵列的各行分别对应的第一驱动单元以及与所述开关元件对应的第二驱动单元。
  6. 如权利要求5所述的显示装置，其中，所述多个驱动单元为多个阵列基板行驱动电路单元，且所述阵列基板行驱动电路单元彼此串联。
  7. 如权利要求1～6任一项所述的显示装置，还包括触摸面板，其中，所述触摸面板包括对应于所述多个像素单元的触控区域，所述电路单元配置来为所述触摸面板提供触摸扫描信号。
  8. 如权利要求1～7任一项所述的显示装置，其中，所述开关元件为晶 体管，包括栅极、源极和漏极，所述开关元件的栅极与所述电路单元电连接，所述源极与所述感光元件的输出端电连接。
  9. 如权利要求8所述的显示装置，其中，所述开关元件设置于所述遮光区域或所述非遮光区域内。
  10. 如权利要求1～7任一项所述的显示装置，其中，所述感光元件为感光薄膜晶体管或光电二极管。
  11. 如权利要求10所述的显示装置，其中，所述感光薄膜晶体管为氧化物薄膜晶体管或非晶硅薄膜晶体管。
  12. 如权利要求8所述的显示装置，其中，所述感光元件为感光薄膜晶体管或光电二极管，所述开关元件的源极与所述感光薄膜晶体管的输出端或光电二极管的输出端电连接。
  13. 如权利要求12所述的显示装置，其中，所述感光薄膜晶体管为氧化物薄膜晶体管或非晶硅薄膜晶体管。
  14. 如权利要求12或13所述的显示装置，其中，所述光探测单元还包括电容器，所述电容器的一端与所述感光薄膜晶体管的输出端或光电二极管的输出端电连接，另一端与所述感光薄膜晶体管的输入端或光电二极管的输入端电连接。
  15. 如权利要求12或13所述的显示装置，还包括：
    公共电极电路，与所述多个像素单元电连接并且与所述感光薄膜晶体管的栅极和源极电连接。
  16. 如权利要求14所述的显示装置，还包括：
    公共电极电路，与所述多个像素单元电连接并且与所述感光薄膜晶体管的栅极和源极电连接。
  17. 如权利要求1～13和15中任一项所述的显示装置，其中，所述光探测单元还包括电容器，所述电容器用于存储所述感光元件产生的电荷；所述开关元件还配置来控制所述电容器所存储的电荷的释放。
  18. 如权利要求1～17任一项所述的显示装置，还包括：光探测信号输出电路，其中，所述光探测信号输出电路与所述光探测单元的输出端电连接。
  19. 如权利要求1～18任一项所述的显示装置，还包括：偏光片，其中，沿垂直于所述显示装置的平面方向，所述感光元件与所述偏光片无交叠区域。
  20. 如权利要求1～19任一项所述的显示装置，其中，
    所述显示装置包括阵列基板和对置基板，所述光探测单元设置于所述阵列基板或所述对置基板上。
  21. 如权利要求1～19任一项所述的显示装置，其中，
    所述显示装置包括阵列基板，所述光探测单元设置于所述阵列基板上。
  22. 一种显示装置，具有遮光区域和非遮光区域，包括：
    多个像素单元；
    公共电极电路，与所述多个像素单元电连接；以及
    光探测单元，包括感光元件，其中，所述感光元件设置于所述非遮光区域内；
    其中，所述公共电极电路与所述感光元件电连接，配置为可控制所述感光元件保持关闭状态。
  23. 如权利要求22所述的显示装置，其中，所述感光元件为感光薄膜晶体管。
  24. 如权利要求23所述的显示装置，其中，所述感光薄膜晶体管包括栅极、源极和漏极，所述公共电极电路与所述栅极和所述源极电连接。
  25. 如权利要求23或24所述的显示装置，其中，所述感光薄膜晶体管为氧化物薄膜晶体管或非晶硅薄膜晶体管。
  26. 一种阵列基板，具有遮光区域和非遮光区域，包括：
    多个像素单元；
    多个信号输入端子，与所述多个像素单元电连接以配置来为所述多个像素单元提供电信号；以及
    光探测单元，包括彼此电连接的感光元件和开关元件，其中，所述感光元件设置于所述非遮光区域内以感测预定波长的光并产生光探测信号，所述开关元件配置为可控制所述感光元件产生的光探测信号的输出；
    其中，所述多个信号输入端子之一与所述开关元件电连接，用于通过其上施加的所述电信号控制所述开关元件的开启或关闭。
  27. 如权利要求26所述的阵列基板，其中，所述多个信号输入端子为栅扫描信号输入端或数据信号输入端。
  28. 如权利要求26所述的阵列基板，还包括多个阵列基板行驱动电路单 元，其中，所述阵列基板行驱动电路单元彼此串联且与所述多个信号输入端子分别电连接。
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