JP7372308B2 - 半導体レーザモジュール - Google Patents

半導体レーザモジュール Download PDF

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Publication number
JP7372308B2
JP7372308B2 JP2021501770A JP2021501770A JP7372308B2 JP 7372308 B2 JP7372308 B2 JP 7372308B2 JP 2021501770 A JP2021501770 A JP 2021501770A JP 2021501770 A JP2021501770 A JP 2021501770A JP 7372308 B2 JP7372308 B2 JP 7372308B2
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Japan
Prior art keywords
semiconductor laser
collimator element
laser module
collimator
cap member
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JP2021501770A
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English (en)
Japanese (ja)
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JPWO2020174982A1 (https=
JPWO2020174982A5 (https=
Inventor
透 西川
一彦 山中
雅彦 西本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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Publication of JPWO2020174982A5 publication Critical patent/JPWO2020174982A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2021501770A 2019-02-27 2020-01-28 半導体レーザモジュール Active JP7372308B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019034609 2019-02-27
JP2019034609 2019-02-27
PCT/JP2020/002996 WO2020174982A1 (ja) 2019-02-27 2020-01-28 半導体レーザモジュール

Publications (3)

Publication Number Publication Date
JPWO2020174982A1 JPWO2020174982A1 (https=) 2020-09-03
JPWO2020174982A5 JPWO2020174982A5 (https=) 2023-08-31
JP7372308B2 true JP7372308B2 (ja) 2023-10-31

Family

ID=72239391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021501770A Active JP7372308B2 (ja) 2019-02-27 2020-01-28 半導体レーザモジュール

Country Status (3)

Country Link
US (2) US12308605B2 (https=)
JP (1) JP7372308B2 (https=)
WO (1) WO2020174982A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12424817B2 (en) 2021-04-23 2025-09-23 Nichia Corporation Light-emitting device
LU102858B1 (en) 2021-09-22 2023-03-22 Fyzikalni Ustav Av Cr V V I A beam shaping optical device for direct pumping of thin disk laser head with laser diode module
DE102022108127A1 (de) 2022-04-05 2023-10-05 Schott Ag Gehäusekappe und Gehäuse für eine Elektronikkomponente
CN119213645A (zh) * 2022-04-15 2024-12-27 扇港元器件股份有限公司 一种激光束模块封装，包括：冲压金属自由形式反射光学器件
WO2024120420A1 (zh) * 2022-12-09 2024-06-13 青岛海信激光显示股份有限公司 激光器、投影光源及投影设备
JPWO2024162073A1 (https=) * 2023-01-30 2024-08-08

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000081550A (ja) 1998-07-10 2000-03-21 Mitsubishi Chemicals Corp レ―ザダイオ―ドモジュ―ル
JP2015099388A (ja) 2015-02-02 2015-05-28 セイコーエプソン株式会社 固体光源装置、プロジェクタ、モニタ装置
JP2016092236A (ja) 2014-11-05 2016-05-23 株式会社リコー レーザモジュール
JP2016115694A (ja) 2014-12-11 2016-06-23 日本電気株式会社 光モジュールの実装構造および製造方法
WO2017086053A1 (ja) 2015-11-20 2017-05-26 シャープ株式会社 アイセーフ光源
JP2018190864A (ja) 2017-05-09 2018-11-29 ウシオ電機株式会社 半導体レーザ装置
JP2019029477A (ja) 2017-07-28 2019-02-21 日亜化学工業株式会社 発光装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182781A (ja) 1984-02-29 1985-09-18 Omron Tateisi Electronics Co 半導体装置
JPH04340286A (ja) 1991-02-07 1992-11-26 Nec Corp 半導体レーザの製造方法
US6332721B1 (en) 1998-07-10 2001-12-25 Mitsubishi Chemical Corp. Laser diode module
WO2002021520A1 (en) * 2000-09-06 2002-03-14 Hitachi, Ltd. Optical head and optical disk device
EP2003484B1 (en) * 2007-06-12 2018-04-11 Lumentum Operations LLC A Light Source
JP5730814B2 (ja) 2012-05-08 2015-06-10 古河電気工業株式会社 半導体レーザモジュール
US9720145B2 (en) * 2014-03-06 2017-08-01 Nlight, Inc. High brightness multijunction diode stacking
US10033151B2 (en) * 2015-12-15 2018-07-24 Nlight, Inc. Laser module with meniscus collimating lens
CN111758169B (zh) * 2018-08-03 2024-05-14 深圳市大疆创新科技有限公司 激光二极管封装模块及距离探测装置、电子设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000081550A (ja) 1998-07-10 2000-03-21 Mitsubishi Chemicals Corp レ―ザダイオ―ドモジュ―ル
JP2016092236A (ja) 2014-11-05 2016-05-23 株式会社リコー レーザモジュール
JP2016115694A (ja) 2014-12-11 2016-06-23 日本電気株式会社 光モジュールの実装構造および製造方法
JP2015099388A (ja) 2015-02-02 2015-05-28 セイコーエプソン株式会社 固体光源装置、プロジェクタ、モニタ装置
WO2017086053A1 (ja) 2015-11-20 2017-05-26 シャープ株式会社 アイセーフ光源
JP2018190864A (ja) 2017-05-09 2018-11-29 ウシオ電機株式会社 半導体レーザ装置
JP2019029477A (ja) 2017-07-28 2019-02-21 日亜化学工業株式会社 発光装置

Also Published As

Publication number Publication date
US20210384698A1 (en) 2021-12-09
JPWO2020174982A1 (https=) 2020-09-03
US20250273924A1 (en) 2025-08-28
WO2020174982A1 (ja) 2020-09-03
US12308605B2 (en) 2025-05-20

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