Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
  • H01S5/02255—Out-coupling of light using beam deflecting elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
  • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/02208—Mountings; Housings characterised by the shape of the housings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/02218—Material of the housings; Filling of the housings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
  • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/023—Mount members, e.g. sub-mount members
  • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/02208—Mountings; Housings characterised by the shape of the housings
  • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
  • H01S5/02251—Out-coupling of light using optical fibres
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
  • H01S5/02253—Out-coupling of light using lenses
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/024—Arrangements for thermal management
  • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Definitions

• the present disclosure relates to a semiconductor laser module.
• a semiconductor laser chip is used as a light source that emits such high-power laser light. Since the emitted light from the semiconductor laser chip diverges, a semiconductor laser module in which a semiconductor laser chip and a collimator element (collimating element) are combined is used (for example, see Patent Document 1).
• the stem on which the semiconductor laser chip is arranged has a parabolic reflection surface (that is, a mirror surface) that collimates the light emitted from the semiconductor laser chip.
• a concave reflector is provided. As a result, it is attempting to collimate the light emitted from the semiconductor laser chip without providing a separate collimator element.
• Patent Document 1 Japanese Patent Application Laid-Open No. 60-1808271
• the present disclosure solves such a problem by providing a semiconductor laser module having a semiconductor laser chip and a collimator element having a mirror surface, in which a mirror surface can be easily formed.
• the purpose is to provide. ⁇ 02020/174982 2 (:171?2020/002996
• one aspect of a semiconductor laser module is at least one semiconductor laser chip, at least one first collimator element, and at least one semiconductor laser chip.
• each of the at least one semiconductor laser chip has an emission point for emitting a laser beam
• each of the semiconductor laser chips is arranged on the bottom so that the emission direction of the laser light and the main surface of the bottom are parallel to each other, and the divergence in the first axial direction perpendicular to the propagation direction of the laser light is The angle is larger than the divergence angle in the propagation direction and the second axis direction perpendicular to the first axis, and each of the at least one first collimator element faces the exit point in the package.
• Has a concave mirror surface which reflects the laser light toward the opening and reduces the divergence angle of the laser light in the first axial direction.
• the first collimator element does not have to be integrated with a part of the housing. Therefore, since the first collimator element can be formed by itself, the first collimator element having the mirror surface having a desired shape can be easily formed.
• the spot diameter due to the divergence of the laser light is closer to the emission point than the case where the laser light is collimated on the emission surface of the transmissive collimator lens.
• Laser light can be collimated at a position where the increment is relatively small. Therefore, it is possible to form a laser beam having a smaller spot diameter on the fast axis (first axis). As a result, the density of laser light can be increased. Also, since the spot diameter of the laser light on the fast axis can be reduced, the fast and slow axes of the laser light ( ⁇ 02020/174982 3 (:171?2020/002996
• the optical distance required to bring the spot diameter ratio (in the second axis) to a specified value can be reduced. Therefore, the semiconductor laser module can be downsized.
• the semiconductor laser module further includes at least one submount bonded to the bottom portion, and each of the at least one semiconductor laser chip includes the at least one submount. It may be joined to the bottom portion via.
• the surface of each of the at least one submount includes a front surface extending in a direction intersecting the emission direction of the laser light,
• Each of the two first collimator elements may be arranged such that the mirror surface faces the front surface.
• the first collimator element is provided separately from the submount on which the semiconductor laser chip is mounted.
• the first collimator element can be formed more easily than in the case where the first collimator element is formed integrally with the submount.
• At least one second collimator element is further provided, and each of the at least one second collimator element is the at least one first collimator element.
• the divergence angle of the laser beam reflected by each of the elements in the second axial direction may be reduced.
• the laser light from the semiconductor laser chip can be collimated by reducing the divergence angles in both the first axis and the second axis.
• the cap member has an inner side surface arranged on the body side and an outer side surface arranged on the back side of the inner side surface.
• the at least one second collimator element may be arranged on the outer side surface.
• a cylindrical surface is a surface that does not have a curvature in one direction parallel to the surface of a lens or a mirror, and a cylindrical surface has a curvature in a direction perpendicular to the above-mentioned one direction.
• cylindrical lens and the cylindrical mirror in this specification refer to the lens and the mirror having the above-mentioned cylindrical surface.
• the cap member has an inner side surface that is a surface on the main body side, and an outer side surface that is disposed on the back side of the inner side surface.
• the at least one second collimator element may be arranged on the inner surface.
• the outer surface of the cap member can be flattened as compared with the case where the second collimator element is arranged on the outer surface of the cap member. Therefore, the additional component can be easily mounted on the outer side surface of the cap member.
• the at least one second collimator element and the window member may be integrally molded.
• the package may seal an internal space.
• Contamination of scientific elements can cause problems such as beam quality degradation.
• the semiconductor laser module of the present disclosure by sealing the package, it is possible to prevent siloxane from flowing from the outside of the package to the inside, so that the optical element is prevented from being contaminated with siloxane. Can be suppressed. Therefore, deterioration of the beam quality of the laser light can be suppressed.
• the at least one semiconductor laser chip and the at least one first collimator element are bonded to the package with a bonding member containing no resin.
• the amount of siloxane existing in the sealed package can be reduced. Therefore, for example, even when the laser light is light in a short wavelength band from ultraviolet to blue, an optical element using siloxane is used. It is possible to suppress the contamination of the laser beam and the accompanying deterioration of the beam quality of the laser beam.
• an optical distance from the emitting point to a mirror surface of the first collimator element, of the at least one first collimator element, into which the laser light is incident. May be greater than or equal to 30 and less than or equal to 300.
• the position near the emission point that is, the position where the spot diameter increase due to the divergence of the laser light is relatively small. This allows you to collimate the laser light. Therefore, a laser beam having a smaller spot diameter can be formed on the first axis. Along with this, it is possible to increase the density of laser light.
• an optical distance from the emission point to a second collimator element of the at least one second collimator element to which the laser light is incident is 1 It may be greater than or equal to 450 and less than or equal to 420.
• the optical distance from the emitting point to the second collimator element is 1 450 or more, the optical distance from the emitting point to the first collimator element is about 700. ⁇ 02020/174982 6 ⁇ (: 171?2020/002996
• the interference between the first collimator element and the second collimator element can be suppressed.
• the spot diameter 0 3 of the laser beam on the second axis can be suppressed to about 100 or less. Therefore, it is possible to suppress the loss that occurs when the laser light is incident on the tip lens of a general optical fiber with a tip lens. Further, it is possible to suppress the size increase of the semiconductor laser module.
• an optical distance from the emission point to a second collimator element of the at least one second collimator element into which the laser light is incident is 9 It may be not less than 0 and not more than 420.
• the optical distance from the emission point to the second collimator element is 900 or more, even if the optical distance from the emission point to the first collimator element is as large as about 700, the first collimator It is possible to suppress the interference between the element and the second collimator element. Further, since the optical distance from the emission point to the second collimator element is 420 or less, the spot diameter 0 3 of the laser beam on the second axis can be suppressed to about 100 or less. Therefore, it is possible to suppress the loss that occurs when the laser light is incident on the tip lens of a general optical fiber with a tip lens. Further, it is possible to suppress the size increase of the semiconductor laser module.
• At least one of the cap member and the top surface portion is a bonding region where the cap member and the top surface portion overlap with each other in a plan view of the bottom portion.
• a first protrusion whose cross-sectional area changes depending on the position in the direction perpendicular to the main surface of the bottom, and a second protrusion whose cross-sectional area does not change depending on the position in the direction perpendicular to the main surface of the bottom. And a part.
• the shape of the second protrusion hardly changes,
• the two projections can improve the positional accuracy of the cap member with respect to the top surface.
• At least one semiconductor laser chip includes a plurality of semiconductor laser chips, and the at least one first collimator element is arranged to face all the emission points of the plurality of semiconductor laser chips. It may include two first collimator elements.
• the number of the first collimator elements can be reduced. Further, since all the laser beams are collimated and reflected by the same first collimator element, it is possible to suppress the positional deviation between the plurality of laser beams.
• the maximum width in the emission direction of the laser light of each of the at least one first collimator element is the maximum width in the emission direction of the mirror surface. May be more than double.
• the portion other than the mirror surface is larger, and thus the handling of the first collimator element can be facilitated. ..
• the bonding area can be expanded compared to the case where the width of the first collimator element in the laser beam emission direction is about the maximum width of the mirror surface. .. Therefore, the bonding strength between the first collimator element and the bottom can be increased.
• a beam twister arranged outside the package may be further provided.
• the laser light can be rotated by a predetermined angle with respect to the optical axis.
• one aspect of the semiconductor laser module according to the present disclosure may further include an optical fiber with a tip lens that receives the laser light reflected by the at least one first collimator element.
• the laser light can be easily introduced into the optical fiber. Moreover, since the optical fiber and the lens are integrated, the labor for adjusting the optical axis can be reduced.
• ⁇ 02020/174982 8 ⁇ (: 171?2020/002996
• Each of the at least one second collimator element has a convex surface portion, and the number of the emission points is (where n 3) the mirror on the optical axis of the laser beam from the emission points. Assuming that the optical distance to the surface is 1-(3, the spot diameter on the second axis in the convex surface portion of the laser beam is 0 3
• the spot diameters of the n laser beams in the first axis are different from the spot diameters in the second axis. Can be suppressed from becoming too small. Therefore, the entire cross section of the optical fiber can be effectively used when introducing n laser beams into an optical fiber having a circular cross section.
• a distance between two adjacent emission points is May be more than 1.2 times.
• the main body has a side portion arranged along an outer edge of the bottom portion, and the side portion is electrically connected to the semiconductor laser chip and the semiconductor laser chip. It may have a plurality of lead pins that are electrically connected. [0047] By using such lead pins, power can be easily supplied to the semiconductor laser chip from outside the package.
• a semiconductor laser module including a semiconductor laser chip and a collimator element having a mirror surface, the semiconductor laser module having a mirror surface easily formed.
• Fig. 1 is a schematic plan view showing an overall configuration of a semiconductor laser module according to the first embodiment.
• FIG. 2 is a schematic first cross-sectional view showing the overall configuration of the semiconductor laser module according to the first embodiment. ⁇ 02020/174982 9 (:171?2020/002996
• FIG. 3 is a schematic second cross-sectional view showing the overall configuration of the semiconductor laser module according to the first embodiment.
• FIG. 4 is a schematic first cross-sectional view showing the overall configuration of the semiconductor laser module according to the first embodiment.
• FIG. 5 is a schematic second cross-sectional view showing the overall configuration of the semiconductor laser module according to the first embodiment.
• FIG. 68 is a schematic side view showing a first collimator element according to a comparative example.
• FIG. 6 is a schematic side view showing the first collimator element according to the first embodiment.
• FIG. 7 is a schematic diagram for explaining the action on the second axis of the semiconductor laser module according to the comparative example and the first embodiment.
• FIG. 8 is a schematic diagram illustrating conditions required for the first collimator element according to the first embodiment.
• FIG. 9 is a schematic cross-sectional view showing a first step of the method for manufacturing the semiconductor laser module according to the first embodiment.
• FIG. 10 is a schematic sectional view showing a second step of the method for manufacturing the semiconductor laser module according to the first embodiment.
• FIG. 11 is a schematic cross-sectional view showing a third step of the method for manufacturing the semiconductor laser module according to the first embodiment.
• FIG. 12 is a schematic cross-sectional view showing a fourth step of the method for manufacturing the semiconductor laser module according to the first embodiment.
• FIG. 13 is a schematic cross-sectional view showing a fifth step of the method for manufacturing the semiconductor laser module according to the first embodiment.
• FIG. 14 is a schematic cross-sectional view showing a sixth step of the method for manufacturing the semiconductor laser module according to the first embodiment.
• FIG. 15 is a schematic cross-sectional view showing a seventh step of the method for manufacturing the semiconductor laser module according to the first embodiment. ⁇ 02020/174982 10 (:171?2020/002996
• FIG. 16 is a schematic sectional view showing an eighth step of the method for manufacturing the semiconductor laser module according to the first embodiment.
• FIG. 17 is a schematic cross-sectional view showing a ninth step of the method for manufacturing the semiconductor laser module according to the first embodiment.
• FIG. 18 is a schematic plan view showing an overall configuration of a semiconductor laser module according to a second embodiment.
• FIG. 19 is a schematic first cross-sectional view showing the overall structure of the semiconductor laser module according to the second embodiment.
• FIG. 20 is a schematic second cross-sectional view showing the overall configuration of a semiconductor laser module according to the second embodiment.
• FIG. 21 is a schematic first cross-sectional view showing the overall structure of the semiconductor laser module according to the second embodiment.
• FIG. 22 is a schematic second cross-sectional view showing the overall configuration of the semiconductor laser module according to the second embodiment.
• FIG. 23 is a schematic diagram showing a relationship between a second collimator element according to the second embodiment and a laser beam.
• FIG. 24 is a schematic plan view showing an overall configuration of a semiconductor laser module according to a third embodiment.
• FIG. 25 is a schematic first cross-sectional view showing the overall configuration of the semiconductor laser module according to the third embodiment.
• FIG. 26 is a schematic second cross-sectional view showing the overall configuration of the semiconductor laser module according to the third embodiment.
• FIG. 27 is a schematic plan view showing an overall configuration of a semiconductor laser module according to the fourth embodiment.
• FIG. 28 is a schematic first cross-sectional view showing the overall structure of the semiconductor laser module according to the fourth embodiment.
• FIG. 29 is a schematic second cross-sectional view showing the overall configuration of the semiconductor laser module according to the fourth embodiment. ⁇ 0 2020/17498 2 1 1 ⁇ (: 171? 2020 /002996
• FIG. 30 is a schematic first cross-sectional view showing the overall configuration of a semiconductor laser module according to the fifth embodiment.
• FIG. 31 is a schematic second cross-sectional view showing the overall structure of a semiconductor laser module according to the fifth embodiment.
• FIG. 32 is a schematic plan view showing a configuration of the semiconductor laser module according to the sixth embodiment excluding the cap member and the window member.
• FIG. 33 is a schematic cross-sectional view showing the configuration of the semiconductor laser module according to the sixth embodiment except the cap member and the window member.
• FIG. 34 is a schematic plan view showing an overall configuration of a semiconductor laser module according to the sixth embodiment.
• FIG. 35 is a schematic sectional view showing an overall configuration of a semiconductor laser module according to the sixth embodiment.
• FIG. 36 is a schematic cross-sectional view showing the shape of the window member according to the sixth embodiment.
• FIG. 37 is a schematic plan view showing the overall configuration of a semiconductor laser module according to the seventh embodiment.
• FIG. 38 is a schematic sectional view showing an overall configuration of a semiconductor laser module according to the seventh embodiment.
• FIG. 39 is a schematic cross-sectional view showing the shape of the window member according to the seventh embodiment.
• each drawing is a schematic view, and is not necessarily strictly illustrated. Therefore, the scales, etc. in each figure do not necessarily match.
• the substantially same components are designated by the same reference numerals, and overlapping explanations will be omitted or simplified.
• the terms “upper” and “lower” do not refer to an upward direction (vertical upward) and a downward direction (vertical downward) in absolute spatial recognition, but in a laminated structure. It is used as a term defined by the relative positional relationship based on the stacking order. Also, the terms “upper” and “lower” refer to two components not only when the two components are spaced apart from each other and there is another component between the two components. It also applies when they are placed in contact with each other.
• the semiconductor laser module according to the first embodiment will be described.
• FIGS. 1, 2, and 3 are a schematic plan view, a first sectional view, and a second sectional view, respectively, showing the overall configuration of the semiconductor laser module 10 according to the present embodiment.
• FIG. 2 shows a cross section taken along the line I-I shown in FIG.
• FIG. 3 shows a cross section taken along the line I I -I I shown in FIG.
• the vertical direction is the axial direction
• the two directions perpendicular to the axial direction and perpendicular to each other are the X-axis direction and the V-axis direction.
• the positive direction of the X axis, the positive direction of the so axis, and the positive direction of the lateral axis are drawn so as to be a right-handed coordinate system.
• the positive direction is perpendicular to the plane of the paper and faces toward the front
• the positive direction of the X axis (not shown in Fig. 2) is perpendicular to the plane of the paper and toward the back.
• the semiconductor laser module 10 is a module that emits laser light, and includes a package 20 as shown in FIGS. 1 to 3.
• the yule 10 further includes a semiconductor laser chip 40 and a first collimator element 50.
• the semiconductor laser module 10 further includes a second collimator element 31, a submount 42, and a heat sink 44.
• the package 20 is a housing in which at least one semiconductor laser chip 40 and at least one first collimator element 50 are arranged.
• the package 20 has a main body 21, a cap member 26 attached to the top surface 25, and a window member 27.
• body 2 1 is a bottomed cylindrical member having a top surface portion 2 5 flat bottom 2 2 and the opening 2 1 3 is formed.
• the opening 2 13 is an example of a first opening formed at the end of the main body 21 opposite to the end where the bottom 22 is arranged.
• the main body 21 has a bottom portion 22 and side portions 23.
• the bottom portion 22 is a flat plate-shaped member located at the bottom of the main body 21.
• bottom 22 is a rectangular flat plate-like member, and semiconductor laser chip 40 and the like are arranged on the main surface of bottom 22 located inside package 20.
• the material for forming the bottom portion 22 is not particularly limited, but may be, for example, O-based alloy or O-based alloy. By using such a material having a high thermal conductivity, it is possible to promote the dissipation of heat generated from the semiconductor laser chip 40 or the like.
• the side portion 23 is a tubular member that is erected on the inner main surface of the package 20 in the bottom portion 22.
• the bottom portion 2 2 is arranged at one open end of the side portion 23.
• the cap member 26 is arranged on the top surface portion 25 which is the other opening end portion.
• the top surface portion 25 is a surface of the end portion of the side portion 23 facing the cap member 26.
• the side portion 23 is a tubular member that is arranged along the outer edge of the bottom portion 22 and has openings formed at both ends.
• a rectangular opening is formed in the side portion 23.
• the opening formed in the top surface portion 25 of the side portion 23 is the first opening (opening described above). Is.
• the side portion 23 and the bottom portion 22 are air-tightly joined by, for example, a joining member having a higher melting point than solder such as a filler.
• the side portion 23 has a plurality of leads electrically connected to the semiconductor laser chip 40. ⁇ 02020/174982 14 (:171?2020/002996
• the side portion 23 has two lead pins 24.
• the lead pins 24 extend from outside the package 20 through the sides 23 into the package 20. Since the side portion 23 has such a lead pin 24, power can be easily supplied to the semiconductor laser chip 40 from the outside of the package 20.
• the material for forming the lead pin 24 is not particularly limited as long as it is a conductive material, and is, for example, ⁇ , ⁇ -based alloy, ⁇ or ⁇ -based alloy.
• the portion surrounding the lead pin 24 is formed of an insulating member such as low melting glass. This allows the lead pins 24 and package 20 to be isolated.
• the material of the side portion 23 other than the lead pin 24 and the portion surrounding the lead pin 24 is not particularly limited, and may be, for example, a 6- or 6- based alloy.
• the top surface portion 25 has a bottom portion 2 2 in a joint region 200 where the cap member 26 and the top portion 25 overlap in a plan view of the bottom portion 2 2.
• the plan view of the bottom portion 22 means a plan view of the main surface of the bottom portion 22.
• the first protrusion portion 61 is a portion for joining the top surface portion 25 and the cap member 26 by projection resistance welding. As shown in FIGS. 2 and 3, the first protrusion 61 is a protrusion having a triangular cross section, and the cross-sectional area decreases as the distance from the bottom 22 increases. In other words, the width of the first protrusion 61 (that is, the width of the first protrusion 61 in the cross section perpendicular to the longitudinal direction) decreases as the distance from the bottom 22 increases.
• the first protrusion 61 is formed continuously over the entire circumference around the opening 2 13. Thereby, the airtightness between the top surface portion 25 and the cap member 26 can be maintained.
• the second protrusion 63 is a portion for positioning the cap member 26 with respect to the top surface 25 of the main body 21.
• the second protrusion 63 is open. ⁇ 0 2020/17498 2 1 5 ⁇ (: 171? 2020 /002996
• the second protruding portion 63 does not necessarily have to be formed over the entire circumference of the opening 2113.
• the second protrusions 6 3 may be formed intermittently (in other words, discretely) along the periphery of the openings 2 13.
• the top surface portion 25 has the first projection portion 6 1 and the second projection portion 6 3 so that the cap member 26 and the top surface portion 25 are separated from each other. Even when the spaces are joined by projection resistance welding using the first protrusions 61, the shape of the second protrusions 6 3 hardly changes. It is possible to improve the positional accuracy of the top surface part 25.
• the cap member 26 is a member attached to the top surface portion 25 of the main body 21.
• the cap member 26 has an inner side surface arranged on the main body 21 side and an outer side surface arranged on the back side of the inner side surface. As shown in FIG. 1, the cap member 26 overlaps the top surface portion 25 over the entire circumference of the opening 2 13 in a plan view of the bottom portion 22.
• an opening 2 63 is formed at a position overlapping the opening 2 13 of the main body 21 in a plan view of the bottom 22.
• the opening 26 3 is an example of a second opening penetrating the cap member 26 in the vicinity of the center of the cap member 26 in plan view.
• the material forming the cap member 26 is not particularly limited, but may be, for example, 6 or a 6-based alloy.
• the cap member 26 has a bottom portion 2 2 and a top surface portion 25 which are overlapped with each other in a joint region 200 in a plan view of the bottom portion 22. It has a first protrusion 62 whose cross-sectional area changes according to the position in the direction perpendicular to the main surface (see Fig. 1 for the joint area 200 of the bottom 22 in plan view). The first protrusion 62 is arranged on the inner surface of the cap member 26.
• the first protrusion 62 is a portion for joining the top surface 25 and the cap member 26 by projection resistance welding. As shown in FIG. 2 and FIG. 3, the first protrusion 62 is a protrusion having a triangular cross section, and it approaches the bottom 22. ⁇ 02020/174982 16 ⁇ (: 171?2020/002996
• the cross-sectional area is reduced.
• the width of the first protrusion 62 (that is, the width of the first protrusion 62 in a cross section perpendicular to the longitudinal direction) decreases as the width approaches the bottom 22.
• the first protrusion 62 is formed continuously over the entire circumference of the opening 2 13. Thereby, the airtightness between the top surface portion 25 and the cap member 26 can be maintained.
• the double projection resistance welding by the first protrusions 61 and 62 is used, and thus the top surface portion 25 and the key surface portion 25 are connected to each other as compared with the case of using the single projection welding resistance. The airtightness maintaining performance between the cap member 26 and the cap member 26 can be improved.
• the window member 27 is a member that is arranged on the cap member 26 and has a light-transmitting property. In the present embodiment, the window member 27 closes the opening 26 3 of the cap member 26.
• the second collimator element 31 and the window member 27 are integrally formed. As shown in FIGS. 2 and 3, the portion of the window member 27 that includes the optical axis of the laser light is the second collimator element 31. 2 and 3, the end of the region where the laser light propagates is indicated by a broken line.
• the window member 27 is a flat plate portion arranged around the second collimator element 31.
• the flat plate portion 28 is joined to the cap member 26.
• the material forming the window member 27 is not particularly limited as long as it is a translucent material.
• the window member 27 is made of glass, for example.
• the window member 27 and the cap member 26 are hermetically joined by the joining member 29.
• the joining member 29 is not particularly limited, but for example, low-melting glass can be used.
• the window member 27 is provided with an alignment mark 8 which is a mark for adjusting the optical axes of the laser beam and the second collimator element 31.
• an alignment mark 8 which is a mark for adjusting the optical axes of the laser beam and the second collimator element 31.
• the constituent elements of the package 20 according to the present embodiment are hermetically joined together. That is, the package 20 seals the internal space. As a result, it is possible to suppress the contamination of the optical elements and the like arranged in the space inside the package 20.
• the laser light is light in the short wavelength band from ultraviolet to blue
• siloxane (3 ⁇ oxane) generated from resin is attracted to the area with high light intensity and deposited on the optical path of the optical element. To do.
• contamination of the optical element can cause problems such as beam quality deterioration.
• the semiconductor laser module 10 of the present embodiment by sealing the package 20 it is possible to suppress the inflow of siloxane from the outside to the inside of the package 20. Therefore, the optical element is contaminated with siloxane. Can be suppressed. Therefore, the beam quality deterioration of the laser light can be suppressed.
• the semiconductor laser chip 40 is the light source of the semiconductor laser module 10,
• the semiconductor laser chip 40 has a substrate, a semiconductor laminated structure laminated on the substrate, and an optical waveguide having a width of, for example, about 10 or more and 500 or less formed on the semiconductor laminated structure.
• the point corresponding to the side surface on the emission side of the light emitting layer in the semiconductor laminated structure is the emission point 40 3 .
• the configuration of the semiconductor laser chip 40 is not particularly limited as long as it can emit laser light.
• the semiconductor laser chip 40 is a nitride-based semiconductor laser chip that emits ultraviolet or blue short-wavelength band laser light.
• the semiconductor laser chip 40 is arranged on the bottom 22 so that the emission direction of the laser light and the main surface of the bottom 22 are parallel to each other.
• the emission direction of the laser light from emission point 40 3 is the so-axis direction
• the main surface of bottom 22 is parallel to the X V plane.
• the semiconductor laser chip 40 is bonded to the bottom 22 via the submount 42.
• the laser light emitted from the semiconductor laser chip 40 propagates along the first axis (fast axis) which is the beam axis in the direction parallel to the stacking direction of the above semiconductor multilayer structure. ⁇ 02020/174982 18 ⁇ (: 171?2020/002996
• Second axis (slow axis: 3 axes) which is a beam axis perpendicular to the direction and perpendicular to the stacking direction.
• the divergence angle in the second axial direction is larger than 0 II.
• the first axis and the second axis between the emission point 40 3 and the first collimator element 50 are axes parallel to the 2 axis and the X axis, respectively.
• the semiconductor laser chip 40 is electrically connected to the lead pins 24 by wires.
• the lead pin 24 to which a low potential is applied and the n- side electrode (not shown) of the semiconductor laser chip are connected by a wire.
• the lead pin 24 to which a high potential is applied and the side electrode (not shown) of the semiconductor laser chip are connected by a wire.
• the wire connecting the lead pin 24 and the side electrode is not shown in FIG.
• the submount 42 is a base that is joined to the bottom 22.
• a semiconductor laser chip 40 is mounted on 2.
• the submount 42 has a rectangular parallelepiped shape, and the surface of the submount 42 has a front surface 4 2 I 1 extending in a direction intersecting the laser light emission direction (V-axis direction). Including.
• the front surface 42 is parallel to the X plane.
• the material forming the submount 42 is not particularly limited. Materials for forming the submount 42 include, for example, single crystal substrates (3 substrates, 3 ⁇ 3 substrates, etc.), ceramics (I 1 ⁇ 1 substrates, 3 substrates (3 substrates, etc.), diamond substrates, alloys (-- , ⁇ ri _ 1 ⁇ /1 ⁇ ), Composite materials O Lee diamond, 89-diamond, etc.) can be used.
• the submount 42 is bonded to the bottom 22 via the heat sink 44. That is, the semiconductor laser chip 40 is bonded to the bottom 22 through the submount 42 and the heat sink 44.
• the semiconductor laser chip 40 is bonded to the submount 42 by the bonding member 41.
• the material forming the joining member 41 is not particularly limited, but is Au 3 n solder, for example.
• the submount 42 is in contact with the heat sink 44 through the joining member 43. ⁇ 02020/174982 19 ⁇ (: 171?2020/002996
• joining member 43 for example, 8 3 n solder can be used.
• the heat sink 44 is a base joined to the bottom 22 and dissipates heat generated by the semiconductor laser chip 40 and the like.
• the heat sink 44 has a rectangular parallelepiped shape, and is joined to the main surface of the bottom portion 22 via the joining member 45.
• the material forming the heat sink 44 is not particularly limited as long as it has a high thermal conductivity, and is, for example, an O-based material.
• As the joining member 45 for example, a low melting point solder having a melting point lower than that of the joining member 43 (melting point: 1400° to 250°°.
• the surface of the heat sink 4 4 may be plated in order to enhance the bonding strength between the heat sink 4 4 and the bonding members 43 and 45.
• 1 ⁇ 1 I-8 re-plating may be applied to the surface of the Sinkichi Toshin 4.
• the first collimator element 50 is a one-dimensional concave mirror, and is arranged in the package 20 so as to face the emission point 4033 of the semiconductor laser chip 40.
• the first collimator element 50 is a cylindrical mirror having a mirror surface 5 0 ".
• the mirror surface 50 0" has no curvature in one direction parallel to the surface and has a cross section perpendicular to the one direction. It has a concave shape.
• the concave reflecting surface can be selected as spherical surface, aspherical surface, parabolic surface, etc. according to the optical design. are arranged so as to be concave reflective surface Te.
• the mirror surface 5 0 reflects toward the laser beam to the opening 2 1 3, and to reduce the divergence angle in a first axial direction of the laser beam.
• the mirror surface 5 0 reflects the laser light propagating in the V-axis direction in the biaxial directions and changes the direction of the laser light by 90°.
• the laser light reflected by the mirror surface 5 0" The light is incident on the second collimator element 31.
• the mirror surface 5 0 ′ overlaps the aperture 2 18 and the aperture 2 6 8.
• the first collimator element 50 is arranged.
• the positions of the mirror surface 50 “in the X-axis direction and the V-axis direction are the X-axis direction of the openings 2 1 3 and 2 6 3”. ⁇ 02020/174982 20 (:171?2020/002996
• the first collimator element 50 is arranged so as to coincide with the position in the V-axis direction.
• the mirror surface 5 0 has a parabolic shape whose focal point is the emission point 4 0 3 of the emission surface of the semiconductor laser chip 40.
• the mirror surface 5 0 " is in the X-axis direction. This is a parabolic surface parallel to the X-axis direction that does not have a refractive index in the direction of 1.
• the divergence angle of the laser light emitted from the emission point 40 3 in the first axial direction can be reduced, that is, the mirror.
• the surface 50 "reduces the divergence angle of the laser light in the first axis direction.
• the optical axis conversion by the reflection of the laser light is performed.
• the sub-mount 40 is arranged on the sub-mount 42 so as to project from the sub-mount 42 toward the first collimator element 50.
• the sub-mount of the first collimator element 50 adjacent to the mirror surface 50 " It is preferable to form the first collimator element 50 so that the focal point of the mirror surface 50 "is located on the extension surface of the surface facing the mount 42. By doing this, the semiconductor laser chip 40 is manufactured. By aligning the emission point 40 3 on the emission surface with the above-mentioned extension surface, the emission point 40 3 can be focused on the mirror surface 50 0 ".
• the optical axis of the laser light the vertical direction (the axial direction of Fig. 1 to Fig. 3), the spot position of the laser light can be visually confirmed, so that the visual alignment of the optical axis can be achieved. It can be done easily. As a result, the productivity of the semiconductor laser module 10 is improved, and the cost can be reduced.
• the first axis of the laser light reflected by the mirror surface 50 is parallel to the so axis.
• the first collimator element 50 has a shape in which a region including one side of the upper surface of a rectangular parallelepiped is cut out, and is formed by cutting out.
• the surface is a parabolic surface (mirror surface 50 0. Note that the cross section parallel to the 7th plane of the mirror surface 50 0, which is a parabolic surface, has the output point 40 3 or the output point 40 3 It has a parabolic shape with a point on a straight line parallel to the X-axis direction as the focal point. ⁇ 0 2020/174982 21 ⁇ (: 171? 2020 /002996
• a reflective film that enhances the reflectance of the laser light may be formed on the mirror surface 50 ".
• the reflective film for example, a dielectric multilayer film may be used.
• the reflective film is a metal film. It may be.
• the first collimator element 50 has a mirror surface 5 0 ", which is the front surface 4 of the submount 4 2.
• the first collimator element 50 which is not integrally formed with the submount 42 on which the semiconductor laser chip 40 is mounted, is provided.
• the first collimator element 50 can be easily formed with improved accuracy of the paraboloid, as compared with the case where the first collimator element 50 is integrally formed with the submount 42.
• the material forming the first collimator element 50 is not limited, but may be glass, for example. When glass is used as described above, the first collimator element 50 having a desired shape can be easily formed by a high temperature mold press or the like.
• the first collimator element 50 is joined to the package 20 by the joining member 5 1.
• the first collimator element 50 is bonded to the package 20 via the heat sink 44.
• the joining member 51 does not contain any resin.
• a resin having no low melting point may be used as the joining member 51. This can reduce the amount of siloxane present in the sealed package, so that, for example, even if the laser light is light in the short wavelength band from ultraviolet to blue, contamination of the optical element by siloxane and It is possible to suppress the deterioration of the beam quality of the laser light which accompanies it. Incidentally.
• ozone cleaning such as UV irradiation can be used to further suppress contamination and consequent deterioration of the beam quality of the laser light.
• a metal film is formed on the joint surface of the first collimator element 50 with the joint member 51 in order to enhance the joint strength with the joint member 51. May be done.
• the I and the layers may be laminated in order from the joint surface side.
• the metal film may be a metal film obtained by laminating two or more of just 1:, 8, and 0', 1 ⁇ 1.
• the glass forming the first collimator element 50 in order from the bonding surface side. And dense ⁇ 02020/174982 22 ⁇ (: 171?2020/002996
• a material having good adhesiveness, a material having a barrier property against 3 contained in the joining member 51, and a material having 3 n easily diffused contained in the joining member 51 may be laminated.
• the second collimator element 31 is an element that reduces the divergence angle in the second axis direction of the laser light reflected by the first collimator element 50.
• the second collimator element 31 has a curvature with respect to the surface defined by the second axial direction and the traveling direction of light, and has a convex shape toward the bottom 22. It is a cylindrical lens.
• the second collimator element 3 1 is disposed so as to face the mirror surface 50 ′ so that the laser light reflected by the first collimator element 50 is incident, The divergence angle of the laser beam in the direction of the father axis is reduced, and as described above, the second collimator element 31 is integrally molded with the window member 27.
• the second collimator element 31 is a cap member. It is arranged on the outer side surface of 2 6 This makes it possible to reduce the size of the package 20 compared to the case where the second collimator element 31 is arranged on the inner side surface of the cap member 26.
• an anti-reflection coating film for laser light is formed on the incident surface and the emission surface of the laser light.
• the non-reflection coating film may be any film as long as it suppresses the reflection of laser light, and is not limited to a film that does not completely reflect laser light.
• the semiconductor laser module 10 may be combined with another optical element such as an optical fiber.
• a configuration example of such a semiconductor laser module will be described with reference to FIGS. 4 and 5.
• 4 and 5 are a schematic first sectional view and a schematic second sectional view, respectively, showing the overall configuration of the semiconductor laser module 11 according to the present embodiment.
• 4 and 5 show sectional views of the semiconductor laser module 11 at the same positions as the sectional views shown in FIGS. 2 and 3, respectively.
• the semiconductor laser module 11 includes the above-mentioned semiconductor laser module 10 and the optical fiber 80 with the tip lens.
• the semiconductor laser module 11 is ⁇ 02020/174982 23 ⁇ (: 171?2020/002996
• Ruda 70 is further provided.
• the optical fiber 80 with the tip lens is a light guide member that receives the laser light reflected by the first collimator element 50.
• the optical fiber 80 with a tip lens is an assembly having an optical fiber 82, a condenser lens 84, a ferrule 83, and a flange 81.
• the optical fiber 82 is a waveguide that guides the laser light incident on the end face.
• the condenser lens 84 is an optical element that converges the laser light on the end face of the optical fiber 82.
• a non-reflective coating film for the laser light is formed on the incident surface and the emission surface of the laser light of the surface of the condenser lens 84.
• the antireflection coating film may be any film as long as it suppresses the reflection of laser light, and is not limited to a film that does not completely reflect laser light.
• the ferrule 83 is a member which is fixed to the flange 81 and holds the optical fiber 82 and the condenser lens 84.
• the flange 81 is a flange fixed to the fiber holder 70, and holds the optical fiber 82 and the condenser lens 84 via the ferrule 83.
• Phi/ ⁇ Holder 70 is a member for holding the optical fiber 80 with the tip lens.
• the fiber holder 70 has a fixed portion 71 and a tubular portion 72.
• the fixing portion 71 is a portion fixed to the package 20 and covers the cap member 26.
• An opening is formed in the fixed portion 7 1 at a position facing the second collimator element 3 1, and a tubular portion 7 2 is arranged around the opening.
• the cylindrical part 7 2 is a cylindrical part into which the optical fiber 8 2 and the condenser lens 8 4 are inserted, and is formed in the cylindrical part 7 2 at the position of the opening formed in the fixed part 7 1. It is fixed to the fixed part 7 1 so that the holes are arranged.
• the laser light emitted from the second collimator element 31 can be made incident on the optical fiber 82 through the opening formed in the fixed portion 71.
• the opening of the fixing portion 71 is installed so as to face the convex laser light incident surface of the second collimator element 31.
• the material forming the fiber holder 70 is not particularly limited, but is, for example, 6 or 6-based alloy.
• the fiber holder 70 and the side 23 of the body 21 are ⁇ 02020/174982 24 (:171?2020/002996
• the optical fiber 80 with a tip lens may be joined to the fiber holder 70 by spot welding.
• the fiber holder 70 is positioned by visual alignment so that the center of the hole of the cylindrical part 72 of the fiber holder and the spot 3 of the laser beam of the second collimator element 31 are aligned, and then spot welded. It may be fixed to the main body 21 by means of.
• the semiconductor laser module 11 includes the optical fiber 80 with a tip lens that receives the laser light reflected by the first collimator element 50. This allows the laser light to be easily introduced into the optical fiber 82. Further, since the optical fiber 8 2 and the condenser lens 8 4 are integrated, the labor for adjusting the optical axis can be reduced.
• the optical fiber with a tip lens 80 causes the semiconductor laser chip 40 to emit light, and the optical fiber with a tip lens 80 is centered by active alignment so that the optical power received by the optical fiber with a tip lens 80 is maximized. It may be fixed to the fiber holder by welding.
• 6A and 6B are schematic side views showing the first collimator element according to the comparative example and the present embodiment, respectively. 6A and 6B also show a semiconductor laser chip 40 that emits the laser light incident on the first collimator element and a submount 42 that mounts the semiconductor laser chip 40. There is.
• the mounting surface shown in FIGS. 68 and 66 corresponds to, for example, the upper surface of the heat sink 44.
• the first collimator element 105 shown in FIG. 68 is a semiconductor laser chip 4
• the cylindrical lens 3 is a cylindrical lens that reduces the divergence angle of the laser light emitted from 0 in the first axis (axial) direction.
• the cylindrical surface that collimates the laser light is the surface on the downstream side of the laser light (that is, the exit surface) in order to reduce the effect of aberration. ⁇ 02020/174982 25 ⁇ (: 171?2020/002996
• the optical distance R o 0 from the emission point 4 0 3 (in other words, the end face 4 0 6 of the semiconductor laser chip 40 where the emission point 4 0 3 is arranged) to the cylindrical surface shown in Fig. 68 is reduced. Difficult to do. For example, it is theoretically possible to reduce the optical distance by reducing the size of the first collimator element 105. However, since the size of the first collimator element 1500 is small, it becomes difficult to handle the first collimator element 1550, and therefore there is a limit to the reduction of the optical distance roti. Generally, the minimum value of the optical distance roti 0 is about 300.
• the width of the divergence of the laser light before reaching the cylindrical surface becomes large. Becomes relatively large. Therefore, the width of the laser beam collimated by the first collimator element 105 0 in the first axis 0 0 becomes relatively large.
• the first collimator element 50 reduces the divergence angle in the first axial direction by the mirror surface 50 ′′.
• the emission point 4 0 3 and the mirror surface 50 ′′ can easily be reduced.
• the optical distance 1 can be reduced to about 50 or less. Therefore, the collimated laser light first
• the width width 0 1 on the axis of 1 can be significantly reduced as compared with the width width 0 0 of the comparative example.
• the first collimator element 50 since the laser light is collimated by the mirror plane 50, the first collimator element 1 0 5 0 according to the comparative example.
• the laser light is collimated on the exit surface of a transmissive collimator lens like the one shown above, at a position closer to the exit point 408, that is, at a position where the spot diameter increase due to laser light divergence is relatively small. Therefore, it is possible to collimate the laser light.Therefore, it is possible to form a laser light having a smaller spot diameter on the first axis, which enables a higher density of the laser light.
• the optical distance aperture 1 is made smaller, for example, the maximum width of the mirror surface 50 in the emitting direction.
• the width of the first collimator element 50 is larger than that of the mirror surface 50 whose width is about the maximum width of the mirror surface 50, the handling of the first collimator element 50 can be facilitated.
• the bonding area is smaller than that when the width of the first collimator element 50 in the laser beam emission direction is about the maximum width of the mirror surface 50. Therefore, it is possible to increase the joint strength between the first collimator element 50 and the bottom portion 22. In the present embodiment, the joint strength between the first collimator element 50 and the sub-mount 42 is increased. it can.
• FIG. 7 is a schematic diagram for explaining the action on the second axis of the semiconductor laser module according to the comparative example and the present embodiment.
• the schematic diagram ( 31 ) in Fig. 7 shows the relationship between the semiconductor laser module according to the comparative example and the spot diameter on the second axis of the laser light.
• the schematic diagram (32) in Fig. 7 shows the relationship between the optical distance from the emission point 40 3 (optical distance through which laser light propagates) and the spot shape of laser light in the semiconductor laser module according to the comparative example.
• the schematic diagram (case 1) in FIG. 7 shows the relationship between the semiconductor laser module according to the present embodiment and the spot diameter of the laser beam on the second axis.
• FIG. 7 shows the relationship between the optical distance from the emission point 40 3 (optical distance through which laser light propagates) and the spot shape of laser light in the semiconductor laser module according to the present embodiment. Show.
• the collimating surface is formed on the exit surface side as the second collimator element 31. ⁇ 02020/174982 27 ((171?2020/002996
• the semiconductor laser module according to the comparative example has a semiconductor laser chip 40, a submount 42 and a first collimator element 1 shown in FIG. In addition to 0 50, the second collimator element 3 1 according to the present embodiment is provided.
• the aspect ratio of the spot shape of the laser light emitted from the semiconductor laser chip 40 (hereinafter also referred to as the beam aspect ratio). .), in the vicinity of the exit points 4 0 3, for example,
• the laser light is emitted from the second collimator element 1500 of the semiconductor laser module according to the comparative example until it reaches the second collimator surface. It diverges more in the first axial direction than in the axial direction. Therefore, for example, when the optical distance is 0 at the exit surface of the first collimator element 1 05 0 (the position where the optical distance from the exit point 4 0 3 is 0 0), The aspect ratio is about 2.6:1. Downstream of the first collimator element 105 0, the laser light does not diverge in the first axial direction but diverges in the second axial direction.
• the second collimator element is set so that the beam aspect ratio of the laser light emitted from the second collimator element 3 1 is the same as the beam aspect ratio in the vicinity of the emission point 40 3.
• the position of the exit surface (collimate surface) of 31 is defined.
• the optical distance (optical path length) from the exit point 40 3 to the exit surface (collimate surface) of the second collimator element 31 is defined as the mouth 30.
• the optical distance port 30 is 9. It becomes a degree.
• the optical distance roti 1 from the emission point 40 3 to the mirror surface 5 0 "of the first collimator element 50 is compared. Since the optical distance can be significantly reduced from 0 in the example, the divergence of the laser light in the first axis direction is small on the mirror surface 50 ". For example, when the optical distance 1 is about 100. In addition, the beam aspect ratio at the mirror surface 50 of the first collimator element 50 is about 1.5:1. ⁇ 02020/174982 28 ⁇ (: 171?2020/002996
• the laser light does not diverge in the first axial direction but diverges in the second axial direction.
• the beam aspect ratio of the laser light emitted from the second collimator element 3 1 is set to be the same as the beam aspect ratio in the vicinity of the emission point 40 3.
• the position of the exit surface (collimating surface) of the second collimator element 3 1 is determined. As shown in the schematic diagram (distance 1) in Fig. 7, let the optical distance from the emission point 40 3 to the emission surface (collimate surface) of the second collimator element 3 1 be the mouth 3 1.
• the optical distance port 31 is 3.3. It is a degree.
• the emission point 4_Rei 3 3.
• the beam aspect ratio is 3:8, which is the ratio of the spot diameter on the second axis to the spot diameter on the first axis compared to the desired beam aspect ratio (1:8). Is 3 times larger.
• the ratio of the spot diameters of the laser light on the first axis and the second axis is It is possible to reduce the optical distance required for obtaining a predetermined value.
• the optical distance port 3 1 from the emission point 4 0 3 to the second collimator element 3 1 can be greatly shortened compared to the optical distance 0 3 0 of the comparative example.
• the package 20 and the semiconductor laser module 10 can be downsized.
• the spot diameter of the collimated laser light emitted from the second collimator element 31 is set to the laser light emitted from the semiconductor laser module according to the comparative example. It can be reduced to about 1/3 of the spot diameter. Therefore, according to the semiconductor laser module 10 according to the present embodiment, the light density of the emitted laser light can be made higher than the light density of the laser light emitted from the semiconductor laser module of the comparative example.
• the laser diode module 10 ⁇ 02020/174982 29 ⁇ (: 171?2020/002996
• the number of parts can be reduced.
• FIG. 8 is a schematic diagram for explaining the conditions required for the first collimator element 50 according to the present embodiment.
• FIG. 8 shows the semiconductor laser chip 40, the submount 42, and the first collimator element 50.
• the heights of the submounts 1 to 13 II are 300, and the number of laser beams from the semiconductor laser chip 40 is the first.
• the horizontal coordinate on the surface on which the submount 42 and the first collimator element 50 shown in Fig. 8 are arranged is 0, and the horizontal coordinate at the emission point 4 03 is 300 0 (that is, , The horizontal coordinate of the upper surface of the submount 42 is regarded as the horizontal coordinate of the emission point 4 0 3 ), and the so coordinate at the emission point 4 0 3 is 0, it is a parabolic surface having the emission point 4 08 as a focal point. It is assumed that the following equation (1) holds for the coordinates of the upper point (so, ⁇ ) on the mirror surface 50.
• ⁇ coordinate of the emission point 4 0 3 disposed at the focus of the paraboloid is represented by + ⁇ with ⁇ .
• the coordinates of the exit point are 3001, the following formula (2) is established.
• the laser light should not be radiated to the surfaces other than the mirror surface 5 0 "of the first collimator element 50 (condition 1), and the laser beam should be applied from the bottom surface of the first collimator element 50 to the mirror surface 5 0"
• the minimum value of the distances 1 to 1 80 1 to the bottom of 1 is 1 00 (condition 2) is the condition required for the first collimator element 50.
• the minimum value of 80 1 is determined in consideration of the productivity of the first collimator element 50. It is difficult to produce the first collimator element 50 in which the distance 1 to 1801 is less than 100, with a high yield.
• the distance 1 to 1 801 corresponds to ⁇ in the above formula (1), so ⁇ becomes 1 000 or more. Therefore, from equation (2), becomes less than 200.
• the height 1 to 1801 at the bottom of the mirror surface 50 is set as the emission point. It is made lower than the height of 403 by 15 or more, that is, is set to be 15 or more.
• the spot diameter 0 [] of the laser beam collimated by the first collimator element 50 at the first axis is expressed by the following formula (6). Holds.
• spot diameter n is 28, It is 370.
• the spot diameter of the laser beam that can be incident on the optical fiber 80 with a tip lens is about 100,000 or less. Therefore, the spot diameter on the first axis of the laser light emitted from the semiconductor laser module 10 according to the present embodiment uses another condenser lens or the like. ⁇ 0 2020/174982 31 ⁇ (: 171? 2020 /002996
• the optical distance !_ 80 from the output point 40 3 to the mirror surface 5 0 "of the first collimator element 50 is 3 001 or more, 3 It may be less than or equal to 0 0.
• the distance from the emission point 40 3 to the mirror surface 50 of the first collimator element 50 it is possible to obtain a position close to the emission point 40 3. That is, the laser beam can be collimated at a position where the spot diameter increase due to the divergence of the laser beam is relatively small, so that the laser beam having a smaller spot diameter can be formed on the first axis. As a result, it is possible to increase the density of laser light.
• FIGS. 9 to 17 are schematic cross-sectional views showing each step of the manufacturing method of the semiconductor laser modules 10 and 11 according to the present embodiment.
• the semiconductor laser chip 40 is mounted on the submount 42.
• the semiconductor laser chip 40 is bonded to the submount 42 using a resin-free bonding member 41 (for example, 8 u 3 n solder).
• the submount 42 on which the semiconductor laser chip 40 is mounted is bonded to the heat sink 44.
• the submount 42 is joined to the heat sink 4 4 by using a joining member 4 3 containing no resin (eg, 8 u 3 n solder).
• the surface of the heat sink 44 is plated with, for example, 1 ⁇ 1-18.
• the plating applied to the surface of the heat sink 44 may be a combination of one or more of the following: 91 % 30 % 89.
• the first collimator element is attached to the heat sink 44.
• the first collimator element 50 is made of resin. ⁇ 0 2020/174982 32 ⁇ (: 171? 2020 /002996
• the first collimator element 50 has a mirror surface
• the first collimator element It is arranged so as to face the front of the 42. Also, the first collimator element
• a metal film is formed on the bonding surface of the first collimator element 50 with the heat sink 44 (that is, the surface facing the heat sink 44).
• the metal layer 5001 is formed on the bonding surface of the first collimator element 50 with the heat sink 44.
• the first collimator element 50 is made of glass and is molded by a high temperature die press or the like.
• a reflection film made of a dielectric multilayer film is laminated on the mirror surface 50 ". The structure of the reflection film is appropriately determined according to the wavelength of the laser light. ,,,,,,,
• ⁇ 1 ⁇ 1 or more may be a laminated metal film.
• a material having good adhesion to the glass forming the first collimator element 50, the bonding member 5 A material having a barrier property against 3 n contained in 1 and a material easily diffused in 3 contained in the bonding member 51 may be laminated.
• the heat sink 4 4 to which the semiconductor laser chip 40, the submount 42 and the first collimator element 50 are bonded is bonded to the bottom 2 2 of the body 2 1. It In the present embodiment, the heat sink 44 is joined to the bottom 22 by using the joining member 45 made of low melting point solder.
• the semiconductor laser chip 40 and the lead pin 24 are connected by a wire.
• the lead pin 24 to which a low potential is applied and the n-side electrode (not shown) of the semiconductor laser chip are connected by a wire.
• the lead pin 24 to which a high potential is applied and the side electrode (not shown) of the semiconductor laser chip are connected by a wire.
• the wire connecting the lead pin 24 and the side electrode is not shown in FIG.
• the cap member 26 and the main body 21 are joined.
• the cap member is formed by projection resistance welding. ⁇ 02020/174982 33 ⁇ (: 171?2020/002996
• the window member 27 is joined to the cap member 26 prior to this step.
• the window member 27 is joined to the cap member 26 by using the joining member 29 made of a low melting point glass containing no resin.
• the second protrusion 6 3 whose cross-sectional area does not change depending on the position in the direction perpendicular to the main surface of the bottom 2 2 is formed on the top surface 25. Since the cross-sectional area of the second protruding portion 63 is constant, even if a voltage is applied to the cap member 26, the current does not concentrate at the tip of the second protruding portion 63. Therefore, the second protrusion 63 does not substantially melt. In this way, the shape of the second protrusion 63 hardly changes, so that the cap member 26 can be positioned with respect to the top surface 25 by the second protrusion 63. As a result, the positional accuracy of the cap member 26 with respect to the top surface portion 25 can be improved.
• the semiconductor laser module 10 shown in FIG. 15 is manufactured by the above steps.
• a phi/ ⁇ holder 70 is bonded to the top surface 25 of the main body 21 of the semiconductor laser module 10.
• the fiber holder 70 is joined to the top surface 25 by spot welding.
• spot weld marks 91 are formed at the spot weld spots.
• the optical fiber 80 with the tip lens is joined to the fiber holder 70.
• the tip portion of the optical fiber 8 2 of the optical fiber 8 0 with a tip lens is placed inside the tubular portion 7 2 of the fiber holder 70.
• spot weld marks 91 are formed at the spot weld spots.
• the semiconductor laser module 11 is manufactured by the above steps.
• the semiconductor laser module according to the second embodiment will be described.
• the semiconductor laser module according to the present embodiment is different from the semiconductor laser modules 10 and 11 according to the first embodiment mainly in that a plurality of semiconductor laser chips 40 are provided.
• the semiconductor laser module according to the present embodiment will be described focusing on the differences from the semiconductor laser modules 10 and 11 according to the first embodiment.
• FIG. 18, FIG. 19 and FIG. 20 are schematic plan views, a first sectional view and a second sectional view, respectively, showing the overall configuration of the semiconductor laser module 110 according to the present embodiment. It is a figure.
• FIG. 19 shows a cross section taken along line X--X--X--X shown in FIG.
• FIG. 20 shows a cross section taken along line XX—XX shown in FIG.
• the semiconductor laser module 110 is equipped with a package 120. As shown in FIG. 20, the semiconductor laser module 110 further includes three semiconductor laser chips 40 and one first collimator element 150. In the present embodiment, the semiconductor laser module 1 10 further includes three second collimator elements 1 3 1, three submounts 4 2 and one heat sink 1 4 4.
• the package 120 is a housing in which three semiconductor laser chips 40 and one first collimator element 150 are arranged inside.
• the package 120 has a main body 121, a cap member 126 attached to the top surface 125, and a window member 127. ⁇ 0 2020/174982 35 ⁇ (: 171? 2020 /002996
• the main body 1 2 1 has a top surface portion 1 2 5 having a flat bottom portion 1 2 2 and an opening 1 2 1 3. It is a bottomed cylindrical member having and.
• the opening 1 2 1 3 is an example of a first opening formed at the end of the main body 1 2 1 opposite to the end where the bottom portion 1 2 2 is arranged.
• the main body 1 21 has a bottom portion 1 2 2 and side portions 1 2 3. Bottom portion 1 2 2 has the same configuration as bottom portion 2 2 according to the first embodiment.
• the side portion 1 23 is different from the side portion 2 3 according to the first embodiment in the number of lead pins 24, and is the same in other points. In this embodiment, as shown in FIG.
• the side portion 123 has six lead pins.
• the top surface portion 1 2 5 forms a joint region 1 2 0 0 where the cap member 1 2 6 and the top surface portion 1 2 5 overlap in the plan view of the bottom portion 1 2 2.
• the cross-sectional area changes depending on the position of the first protrusion 6 1 whose cutting area changes according to the position in the direction perpendicular to the main surface of the bottom 1 2 2 and the position in the direction perpendicular to the main surface of the bottom 1 2 2.
• No second protrusion 63 is provided.
• the cap member 1 2 6 is a member attached to the top surface portion 1 2 5 of the main body 1 2 1.
• the cap member 1 26 has an inner surface arranged on the main body 1 21 side and an outer surface arranged on the back side of the inner surface. As shown in FIG. 18, the cap member 1 26 overlaps with the top surface portion 1 2 5 over the entire circumference of the opening 1 2 1 3 in a plan view of the bottom portion 1 2 2.
• An opening 1 2 6 3 is formed in the cap member 1 2 6 at a position overlapping the opening 1 2 1 3 of the main body 1 2 1 in a plan view of the bottom portion 1 2 2.
• the opening 1 2 6 3 is an example of a second opening penetrating the cap member 1 26 in the vicinity of the center of the cap member 1 26 in plan view.
• the cap member 1 2 6 has a joining region 1 2 0 0 where the cap member 1 2 6 and the top surface 1 2 5 overlap with each other in plan view of the bottom portion 1 2 2.
• it has a first protrusion 6 2 whose cross-sectional area changes depending on the position in the direction perpendicular to the main surface of the bottom 1 22 2.
• the window member 127 is a member which is arranged on the cap member 126 and has a light-transmitting property. In the present embodiment, the window member 127 covers the opening 1263 of the cap member 126. In the present embodiment, the three second collimator elements 1 3 1 and the window ⁇ 02020/174982 36 ⁇ (: 171?2020/002996
• Material 1 2 7 and 1 are integrally molded. As shown in FIGS. 19 and 20, the portion of the window member 1 27 including the optical axis of the laser light is the second collimator element 1 3 1.
• the window member 127 has a flat plate portion 128 arranged around the second collimator element 131.
• the flat plate portion 1 2 8 is joined to the cap member 1 2 6.
• the window member 1 27 and the cap member 1 26 are hermetically joined by the joining member 29.
• Each of the three semiconductor laser chips 40 has the same configuration as the semiconductor laser chip 40 according to the first embodiment. Further, each of the three submounts 42 has the same structure as the submount 42 according to the first embodiment. The three semiconductor laser chips 40 are mounted on the three submounts 42, respectively.
• Heat sink 1 4 4 has the same configuration as heat sink 4 4 according to the first embodiment except for the dimensions.
• Three submounts 4 2 are bonded to the heatsink 1 4 4.
• the three submounts 42 are arranged on the upper surface of the heat sink 14.4 in a direction perpendicular to the emission direction of laser light (that is, the X-axis direction in FIGS. 18 to 20). More specifically, the positions of the three semiconductor laser chips 40 at the respective emission points 40 3 in the laser beam emission direction (that is, in the axial direction of FIGS. 18 to 20) should be the same.
• Three semiconductor laser chips 40 and three submounts 42 are arranged.
• the 1st collimator element 150 is a single cylindrical mirror
• the mirror surface 15 0 reflects the laser light from the three semiconductor laser chips 40 toward the apertures 1 2 1 3 and reduces the divergence angle of each laser light in the first axial direction.
• Mirror surface 150 “The three laser beams reflected by the three laser beams are respectively incident on the three second collimator elements 1 3 1.
• the mirror surface 1 5 0 “The first collimator element 150 is arranged so that the opening 1 2 1 3 and the opening 1 2 6 3 overlap. ⁇ 02020/174982 37 ⁇ (: 171?2020/002996
• first collimator element 150 is arranged so that the mirror surface 150 "is opposed to each front surface 42 of the three sub-mounts 42.
• the mirror surface 150 has a parabolic shape whose focal point is the emission point 40 3 of the three semiconductor laser chips 40.
• the mirror surface 150" is the X-axis. It is a parabolic surface parallel to the X-axis direction that does not have a curvature in the direction..
• the distance from each of the emission points 4 0 3 of the three semiconductor laser chips 40 to the mirror surface 150 is equal to each other.
• Laser light is emitted in the so-axis direction from each of the three semiconductor laser chips 40. Further, the fast axis of the laser light emitted from the three semiconductor laser chips 40 is the axial direction, and the slow axis is the slow axis.
• Each of the three second collimator elements 1 3 1 is an element that reduces the divergence angle of the laser light reflected by the first collimator element 1 50 in the second axial direction.
• each of the three second collimator elements 1 3 1 has a convex surface portion, as shown in FIG. More specifically, each of the three second collimator elements 1 3 1 is a cylindrical lens having a convex shape in a direction away from the bottom portion 1 2 2. In other words, each of the three second collimator elements 1 3 1 is a cylindrical lens in which a cylindrical surface is formed on the emitting surface. As shown in FIG.
• each of the three second collimator elements 1 3 1 reduces the divergence angle of the laser light in the direction of the second axis, that is, the father axis.
• the second collimator element 1 3 1 is integrally formed with the window member 1 27.
• the second collimator element 1 3 1 is arranged on the outer surface of the cap member 1 26.
• the size of the package 120 can be reduced as compared with the case where the second collimator element 1 3 1 is arranged on the inner side surface of the cap member 1 26.
• the three second collimator elements 1 3 1 are arranged on the optical paths of the three laser beams reflected by the first collimator element 1 50, respectively.
• the semiconductor laser module 110 has the plurality of semiconductor laser chips 40 and all the emission points 403 of the plurality of semiconductor laser chips 40. It is provided with one first collimator element 150 arranged so as to face each other. As a result, the number of first collimator elements 150 can be reduced. Further, since all the laser beams are collimated and reflected by the same first collimator element 150, it is possible to suppress the positional deviation between the plurality of laser beams.
• the emission point 4 0 3 is set. They may be arranged on a straight line in the direction of the father axis. In the present embodiment, the number of semiconductor laser chips 40 is set to 3, but the number is not limited to this. The number of semiconductor laser chips 40 may be plural.
• FIGS. 21 and 22 are a schematic first sectional view and a schematic second sectional view, respectively, showing the overall configuration of the semiconductor laser module 1 11 according to the present embodiment.
• 21 and 22 show sectional views of the semiconductor laser module 1 11 at the same positions as the sectional views shown in FIGS. 19 and 20, respectively.
• the semiconductor laser module 1 11 is provided with the above-mentioned semiconductor laser module 110 and three optical fibers with tip lens 80. Moreover, in the present embodiment, the semiconductor laser module 1 1 1 1 1 further includes a fiber holder 1 7 0.
• the optical fiber 80 with the tip lens has the same configuration as the optical fiber 80 with the tip lens according to the first embodiment. ⁇ 02020/174982 39 (:171?2020/002996
• the fiber holder 170 is a member that holds the three optical fibers with tip lenses 80.
• the fiber holder 1700 has a fixed portion 1171 and a tubular portion 72.
• the fixed portion 1 71 is a portion fixed to the package 1 20 and covers the cap member 1 2 6.
• An opening is formed in the fixed portion 1 71 at a position facing each of the three second collimator elements 1 3 1.
• the fixed portion 1711 is provided with three openings.
• a cylindrical portion 72 is arranged around each opening. Cylindrical portion 72 has the same configuration as tubular portion 72 according to the first embodiment.
• the fiber holder 170 and the side portion 1 23 of the main body 1 21 are joined by, for example, spot welding. 21 and 22 show spot weld marks 91 formed by spot welding. Further, the optical fiber 80 with the tip lens may also be joined to the fiber holder 170 by spot welding. The positioning and fixing of the fiber holder 170 and the main body 121, and the positioning and fixing of the optical fiber with a tip lens 80 and the fiber holder 170 may be performed by the same method as in the first embodiment. ..
• FIG. 23 is a schematic diagram showing the relationship between the second collimator element 1 3 1 according to the present embodiment and laser light.
• the schematic diagram ( 3 ) in FIG. 23 is a diagram showing the relationship between the second collimator element 1 3 1 according to the present embodiment and the spot shape of the laser beam on the second axis.
• the schematic diagram (well) in FIG. 23 shows the relationship between the second collimator element 31 according to the first embodiment and the spot shape of the laser beam on the second axis. Schematic of Figure 23 ⁇ 02020/174982 40 40 (: 171?2020/002996
• a semiconductor laser chip 40 is also shown in (a) and ().
• the second collimator element 31 shown in the schematic diagram (distance) in Fig. 23 is a cylindrical lens having a cylindrical surface formed on the laser light incident surface.
• the aberration is larger than that of the second collimator element 131 according to the present embodiment, so that the beam quality of the laser light is deteriorated.
• the contour of the spot of the laser light emitted from the second collimator element 31 is blurred. Therefore, for example, when the laser light is incident on the optical fiber, the peripheral portion of the spot of the laser light is not incident on the optical fiber, which may increase the loss.
• the second collimator element 1 3 1 according to the present embodiment is a cylindrical lens in which a cylindrical surface is formed on the emission surface of laser light, and therefore the second collimator element 3 1 according to the first embodiment Less aberration. Therefore, the quality of the laser light emitted from the second collimator element 1 3 1 is better than that of the laser light emitted from the second collimator element 3 1 according to the first embodiment. Along with this, the contour of the spot of the laser light emitted from the second collimator element 1 3 1 becomes clear. Therefore, for example, it is possible to reduce the loss when the laser light is incident on the optical fiber.
• the cap member 1 2 6 on which the second collimator element 1 3 1 is arranged is arranged on the inner side surface on the main body 1 2 1 side and on the back side of the inner side surface. And an outer surface.
• the second collimator element 1 3 1 is arranged on the outer surface of the cap member 1 2 6.
• the second collimator element 1311 needs to have a thickness of about 400 or more and 800 or less in consideration of the strength of the glass as the constituent material, the manufacturing method, and the like.
• the cap member 1 is used as the second collimator element 1 3 1.
• the optical distance from the emission point 4 0 3 to the second collimator element 1 3 1 is , 1450 or more and 4200 or less. Since the optical distance from the output point 4 0 3 to the second collimator element 1 3 1 is 1 450 or more, the optical distance from the output point 4 0 3 to the first collimator element 1 50 is 7 0.
• the interference between the first collimator element 150 and the second collimator element 1 31 can be suppressed even if it is relatively large, such as ⁇ .
• the beam aspect ratio can be made smaller than 1:1 (the aspect ratio of the first axis can be made small) by setting the optical distance to 1 450 001 or more. Also, since the optical distance from the emission point 4 0 3 to the second collimator element 1 3 1 is less than 4 200, the spot diameter 0 3 on the second axis of the laser light is set to 1 0. It can be suppressed to less than ⁇ ⁇ . Therefore, it is possible to suppress the loss that occurs when the laser light is incident on the tip lens of the optical fiber 80 with a tip lens as shown in FIGS. 21 and 22. Further, it is possible to suppress the increase in size of the semiconductor laser module.
• the optical distance from the emission point 4 03 to the second collimator element 1 3 1 is the distance from the emission point 4 0 3 to the part of the second collimator element 1 3 1 that has a collimating effect. Means the optical distance of.
• the second collimator element 31 as shown in the schematic view (3) of FIG. 23 may be arranged on the inner side surface of the cap member 1 26.
• the outer surface of the cap member 1 26 can be flattened more than when the second collimator element 3 1 is arranged on the outer surface of the cap member 1 26. Therefore, the additional component can be easily mounted on the outer surface of the cap member.
• the optical distance from the emission point 4 0 3 to the second collimator element 1 3 1 is 900 or more, the optical distance from the emission point 4 0 3 to the first collimator element 1 50 is about 700. Even if it is relatively large, it is possible to suppress the interference between the first collimator element 150 and the second collimator element 1 31.
• the spot diameter 0 3 on the second axis of the laser beam is set to 1 0 0 0. It can be suppressed to the following level. Therefore, it is possible to suppress the loss that occurs when the laser light is incident on the tip lens of the optical fiber 80 with the tip lens as shown in FIGS. 21 and 22. Further, it is possible to suppress the increase in size of the semiconductor laser module.
• the number of emission points 40 3 is n (however, n 3 1), and the optical distance from the emission point 40 3 to the mirror surface 150 0 “on the optical axis of the laser beam is !_80, the following equation may be established with the spot diameter of the second axis of the laser light on the convex surface (cylindrical surface) of the second collimator element 1 3 1 as the number 0 3.
• the semiconductor laser module according to the third embodiment will be described.
• the semiconductor laser module according to the present embodiment differs from the semiconductor laser module 110 according to the second embodiment in that it further includes a beam twister.
• the semiconductor laser module according to the present embodiment will be described with reference to FIGS. 24 to 26, focusing on differences from the semiconductor laser module 110 according to the second embodiment.
• FIGS. 24, 25, and 26 are schematic plan views, a first sectional view, and a second sectional view, respectively, showing the overall configuration of the semiconductor laser module 210 according to the present embodiment. It is a figure.
• FIG. 25 shows a cross section taken along the line X X V—X X V shown in FIG.
• FIG. 26 shows a cross section taken along the line X X V I — X X V shown in FIG. 24 and 26, the plan view of the end face of the optical fiber 82 into which the laser light is incident and the schematic diagram of the spot 3 of the laser light incident on the end face are also shown in the broken line frame. Is shown.
• the semiconductor laser module 210 includes a package 120. As shown in FIG. 26, the semiconductor laser module 210 further includes three semiconductor laser chips 40 and one first collimator element 150. In this embodiment, the semiconductor laser module 210 is further provided with three second collimator elements 1 31, three submounts 4 2 and one heat sink 1 4 4. Each of the above-described components of the semiconductor laser module 210 has the same configuration as each component according to the second embodiment.
• the semiconductor laser module 210 has a beam twister 2 6 arranged outside the package 120. ⁇ 02020/174982 44 ⁇ (: 171?2020/002996
• the beam twister 260 is an optical element that rotates the incident laser light in the direction of the spot and emits the laser light.
• the beam twister 260 rotates the first axis (fast axis) of the three laser beams from the so-axial direction to the axial direction and makes the second axis (slow axis) the X-axis direction. To rotate in the axial direction.
• the beam twister 260 further converts the propagation directions of the three laser beams from the major axis direction to the father axis direction.
• the beam twister 260 according to the present embodiment can be realized by, for example, a plurality of mirrors that reflect each laser beam.
• the beam twister 260 is designed to emit three laser beams in the first axial direction (at the position emitted from the beam twister 260). They are arranged in the state of being separated in the axial direction) and emitted. Therefore, three laser lights can be incident on one optical fiber 82. This makes it possible to realize a high-power laser light source.
• a semiconductor laser module according to the fourth embodiment will be described.
• the semiconductor laser module according to the present embodiment is different from the semiconductor laser module 210 according to the third embodiment mainly in the configuration of the beam twister and the arrangement of the semiconductor laser chips.
• the semiconductor laser module according to the present embodiment will be described with reference to FIGS. 27 to 29, focusing on the differences from the semiconductor laser module 210 according to the third embodiment.
• Figs. 27, 28, and 29 are schematic plan views, a first sectional view, and a second sectional view, respectively, showing the overall configuration of the semiconductor laser module 310 according to the present embodiment. It is a figure.
• FIG. 28 a cross section taken along the line XXV ⁇ I XXVII shown in FIG. 27 is shown.
• FIG. 29 shows a cross section taken along the line XX _ _ _ ⁇ ⁇ X shown in Fig. 27.
• a plan view of the end face of the optical fiber 82 on which the laser light is incident and a schematic diagram of the spot 3 of the laser light incident on the end face are shown in a broken line frame. Are shown. ⁇ 02020/174982 45 ((171?2020/002996
• the semiconductor laser module 310 includes a package 320. As shown in FIG. 29, the semiconductor laser module 310 includes three semiconductor laser chips 40 and three first collimator elements.
• the semiconductor laser module 310 further includes three second collimator elements 331, three submounts 42, and one heat sink 144. Further, the semiconductor laser module 310 further includes a beam twister 360.
• the package 320 is a housing in which three semiconductor laser chips 40 and three first collimator elements 50 are arranged.
• the package 320 includes a main body 121, a cap member 326 attached to the top surface 125, and a window member 327.
• Main body 1 21 according to the present embodiment has the same configuration as main body 1 2 1 according to the second and third embodiments.
• the cap member 326 is a member attached to the top surface portion 125 of the main body 121.
• the cap member 326 has an inner side surface arranged on the main body 1 21 side and an outer side surface arranged on the back side of the inner side surface.
• the cap member 3 2 6 has an opening 3 2 at a position overlapping the opening 1 2 1 3 of the main body 1 2 1 in plan view of the bottom 1 2 2.
• the opening 3 2 6 3 is an example of a second opening penetrating the cap member 3 26 in the vicinity of the center of the cap member 3 26 in plan view.
• the cap member 3 26 has a first protrusion 6 2 as in the cap members 1 26 according to the second and third embodiments.
• the window member 327 is a member that is disposed on the cap member 326 and has a light-transmitting property.
• the window member 32 7 closes the opening 3 26 3 of the cap member 3 26.
• the three second collimator elements 3 3 1 and the window member 3 27 are integrally formed. As shown in FIGS. 28 and 29, a portion of the window member 327 including the optical axis of the laser light is the second collimator element 331.
• the window member 32 7 is a flat plate arranged around the second collimator element 3 31. ⁇ 02020/174982 46 ⁇ (: 171?2020/002996
• the flat plate portion 3 28 is joined to the cap member 3 26.
• the window member 327 and the cap member 326 are hermetically joined by the joining member 29.
• Each of the three semiconductor laser chips 40 has the same configuration as the semiconductor laser chip 40 according to the first embodiment. Further, each of the three submounts 42 has the same structure as the submount 42 according to the first embodiment. The three semiconductor laser chips 40 are mounted on the three submounts 42, respectively.
• the heat sink 1 4 4 has the same configuration as the heat sink 1 4 4 according to the second and third embodiments.
• Three submounts 4 2 are bonded to the heatsink 1 4 4.
• the three submounts 42 are arranged on the upper surface of the heat sink 1 44 in a direction perpendicular to the laser light emission direction (that is, X in Figs. 27 to 29). Axial direction).
• the three emission points 40 3 of the three semiconductor laser chips 40 are arranged so that their positions in the emission direction of the laser beam (that is, the so-axis direction in FIGS. 27 to 29) are different from each other.
• One semiconductor laser chip 40 and three submounts 42 are arranged.
• the three first collimator elements 50 have the same configuration as the first collimator element 50 according to the first embodiment. As shown in FIGS. 27 and 29, the three first collimator elements 50 are arranged on the upper surface of the heat sink 144 so as to be separated from each other in the direction perpendicular to the laser light emission direction. In the present embodiment, the three first collimator elements 50 are arranged such that their positions in the laser light emission direction (that is, the V-axis direction in FIGS. 27 to 29) of the three first collimator elements 50 are different from each other. Are placed. The distances from the emission points 40 3 of the three semiconductor laser chips 40 to the mirror surfaces 5 0 of the three first collimator elements 50 are equal to each other.
• Each of the three semiconductor laser chips 40 Laser light is emitted in the optical axis direction from the semiconductor laser chip 40. Further, the fast axis of the laser light emitted from the three semiconductor laser chips 40 is the axial direction, and the slow axis is the father axis direction.
• the beam twister 360 turns the direction of the spot of the incident laser light. ⁇ 02020/174982 47 ⁇ (: 171?2020/002996
• the beam twister 360 does not rotate the first axis (fast axis) of the three laser beams but rotates the second axis (slow axis) from the X axis direction to the outer axis direction. Let Further, the beam twister 360 further converts the propagation directions of the three laser beams from the axial direction to the X-axis direction.
• the beam twister 260 according to this embodiment can be realized by, for example, a plurality of mirrors that reflect each laser beam. In the beam twister 360 according to the present embodiment, the incident positions of the three laser beams are different from each other in the so-axis direction. As a result, as shown in FIG.
• the beam twister 360 can be realized by, for example, a plurality of mirrors that reflect each laser light.
• the beam twister 360 has three laser beams, as shown in Fig. 27.
• a semiconductor laser module according to the fifth embodiment will be described.
• the semiconductor laser module according to the present embodiment differs from the semiconductor laser module 110 according to the second embodiment mainly in that a single semiconductor laser chip has a plurality of emission points.
• the semiconductor laser module according to the present embodiment will be described below with reference to FIGS. 30 and 31 focusing on the differences from the semiconductor laser module 110 according to the second embodiment.
• FIGs. 30 and 31 are a schematic first cross-sectional view and a schematic second cross-sectional view, respectively, showing the overall configuration of the semiconductor laser module 410 according to the present embodiment.
• FIG. 30 a cross section along the optical axis of one laser beam is shown.
• FIG. 31 shows a cross section that passes through the semiconductor laser chip 440 and is perpendicular to the laser light emission direction (V-axis direction).
• the semiconductor laser module 410 is ⁇ 02020/174982 48 ⁇ (: 171?2020/002996
• the semiconductor laser module 410 further includes one semiconductor laser chip 440 and one first collimator element 450.
• the semiconductor laser module 410 further includes six second collimator elements 431, one submount 442, and one heatsink 444.
• the package 420 is a housing in which one semiconductor laser chip 440 and one first collimator element 450 are arranged inside.
• the package 420 has a main body 1 21, a cap member 4 2 6 attached to the top surface 1 2 5, and a window member 4 2 7.
• Main body 1 21 according to the present embodiment has the same configuration as main body 1 21 according to second to fourth embodiments.
• the cap member 426 is a member attached to the top surface 1125 of the main body 1211.
• the cap member 426 has an inner surface arranged on the main body 1 21 side and an outer surface arranged on the back side of the inner surface.
• the cap member 4 26 overlaps with the top surface 1 2 5 over the entire circumference around the opening 1 2 1 8 in plan view of the bottom 1 2 2.
• the cap member 4 26 has an opening 4 2 6 3 formed at a position overlapping the opening 1 2 1 3 of the main body 1 2 1 in a plan view of the bottom portion 1 2 2.
• the opening 426 is an example of a second opening penetrating the cap member 426 near the center of the cap member 426 in plan view.
• the cap member 4 26 has the first protrusion 6 2 as in the cap members 1 2 6 according to the second and third embodiments.
• the window member 427 is a member which is disposed on the cap member 426 and has a light-transmitting property.
• the window member 42 7 closes the opening 4 26 3 of the cap member 4 26.
• the six second collimator elements 4 3 1 and the window member 4 27 are integrally formed. As shown in FIGS. 30 and 31, a portion of the window member 427 including the optical axis of the laser beam is the second collimator element 431.
• the window member 427 is a flat member arranged around the second collimator element 431. ⁇ 02020/174982 49 ⁇ (: 171?2020/002996
• the flat plate portion 428 is joined to the cap member 426.
• the window member 42 7 and the cap member 42 6 are hermetically joined by a joining member 29.
• the semiconductor laser chip 440 differs from the semiconductor laser chip 40 according to the first embodiment in that it has a plurality of emission points.
• semiconductor laser chip 440 has six emission points. Therefore, the semiconductor laser chip 440 emits six laser beams arranged in the X-axis direction.
• the fast axis of each laser beam emitted from the semiconductor laser chip 440 is the axial direction, and the slow axis is the father axis direction.
• the number of emission points of the semiconductor laser chip 440 is not particularly limited as long as it is plural.
• the submount 4 4 2 is a base joined to the bottom 1 2 2.
• the submount 4 4 2 has the same configuration as the submount 4 2 according to the first embodiment except that the semiconductor laser chip 4 4 0 is mounted.
• Heat sink 4 44 has the same configuration as heat sink 1 4 4 according to the second embodiment.
• the first collimator element 450 has a concave mirror surface 450 arranged to face all the emission points of the semiconductor laser chip 440 in the package 420.
• the mirror surface 45 0 "reflects the laser light from the six emission points toward the aperture 1 2 1 3 and reduces the divergence angle of each laser light in the first axis direction.
• the six laser beams reflected by the mirror surface 450 are incident on the six second collimator elements 431 respectively.
• the first collimator element 450 is arranged so that the mirror surface 450 and the opening 1 2 1 3 and the opening 4 2 6 3 overlap.
• the mirror surface 450 has a focus on the six emission points of the semiconductor laser chip 440. ⁇ 02020/174982 50 ((171?2020/002996
• the mirror surface 450 reduces the divergence angle of the six laser beams in the first axis direction. This makes it possible to reduce the divergence angle of the six laser beams by using the six first collimator elements that respectively reflect the six laser beams. It is possible to reduce the number of parts of the semiconductor laser module 4 10. Also, it is possible to reduce the labor for adjusting the position of the first collimator element 450.
• Each of the six second collimator elements 431 is an element that reduces the divergence angle in the second axial direction of the laser light reflected by the first collimator element 450.
• each of the six second collimator elements 4 3 1 is a cylindrical lens having a convex shape in a direction away from the bottom 1 22 2.
• each of the six second collimator elements 431 is a cylindrical lens having a cylindrical surface on the exit surface.
• Each of the six second collimator elements 4 3 1 reduces the divergence angle of the laser beam in the X axis direction, which is the second axis, as shown in FIG. 3 1.
• the six second collimator elements 431 are arranged on the optical paths of the six laser beams reflected by the first collimator elements 450, respectively.
• the semiconductor laser chip 440 has a plurality of emission points, each of which emits a laser beam. As a result, compared to the case where a plurality of semiconductor laser chips each having one emission point are used, the time and labor for adjusting the position of the semiconductor laser chips can be reduced, and at the same time, the positional deviation between the plurality of laser beams can be suppressed.
• a semiconductor laser module according to the sixth embodiment will be described.
• the semiconductor laser module according to the present embodiment differs from the semiconductor laser module 110 according to the second embodiment mainly in that a plurality of semiconductor laser chips are arranged in a matrix.
• the semiconductor laser module according to the present embodiment will be described below with reference to FIGS. 32 to 36, focusing on the differences from the semiconductor laser module 110 according to the second embodiment. ⁇ 0 2020/174982 51 ⁇ (: 171? 2020/002996
• FIGs. 32 and 33 are a schematic plan view and a cross-sectional view showing the configuration of the semiconductor laser module 510 according to the present embodiment, excluding the cap member 526 and the window member 527, respectively. It is a figure.
• FIG. 33 shows a cross section taken along the line XX X ⁇ I-XX XX I I shown in FIG. 34 and 35 are a schematic plan view and a sectional view, respectively, showing the overall configuration of the semiconductor laser module 510 according to the present embodiment.
• FIG. 35 a cross section taken along line X X X V—X X X V shown in FIG. 34 is shown.
• FIG. 36 is a schematic cross-sectional view showing the shape of window member 52 7 according to the present embodiment.
• Fig. 36 shows a cross section of the window member 527 parallel to the 2X plane.
• the semiconductor laser module 510 includes a package 52. As shown in Fig. 32 and Fig. 33, the semiconductor laser module 510 includes a plurality of semiconductor laser chips 40 arranged in a matrix and four first collimator elements 550. Further prepare. In the present embodiment, the semiconductor laser module 5 10 further includes five second collimator elements 5 3 1, a plurality of submounts 4 2 arranged in a matrix, and four heat sinks 5 4 4. ..
• the semiconductor laser module 510 includes a package 52.
• the semiconductor laser module 510 includes a plurality of semiconductor laser chips 40 arranged in a matrix and four first collimator elements 550. Further prepare.
• the semiconductor laser module 5 10 further includes five second collimator elements 5 3 1, a plurality of submounts 4 2 arranged in a matrix, and four heat sinks 5 4 4. .
• FIG. 2 similarly to FIG. 2, as shown in FIG.
• the semiconductor laser chip 40 is so arranged that the emission surface of the semiconductor laser chip 40 is aligned with the focal position of the mirror surface 5 50 ′ and ,
• the semiconductor laser chip 40 is arranged so as to project from the submount 42 toward the first collimator element 55.
• the semiconductor laser chip 40 has an emission surface of the semiconductor laser chip 40.
• the sub-mount 42 may be arranged on the sub-mount 42 so that the side surface thereof faces the first collimator element 550.
• the package 520 is a housing in which a plurality of semiconductor laser chips 40 and four first collimator elements 550 are arranged inside. As shown in FIGS. 34 and 35, the package 520 has a main body 521, a cap member 526 attached to the top surface 525, and a window member 527.
• the main body 5 21 has a flat plate-shaped bottom 5 2 2 and an opening 5 2 1 3. ⁇ 0 2020/174982 52 ⁇ (: 171? 2020 /002996
• the opening 5 2 1 3 is an example of a first opening formed at the end of the main body 5 2 1 opposite to the end where the bottom 5 2 2 is arranged.
• the main body 5 2 1 has a bottom portion 5 2 2 and side portions 5 2 3.
• the bottom portion 52 2 is a flat plate-shaped member located at the bottom of the main body 52 1.
• the bottom portion 52 2 is a rectangular flat plate-like member, and a plurality of semiconductor laser chips 40, etc. are formed on the main surface of the bottom portion 52 2 located inside the package 5 20. Are placed.
• the side portion 52 3 is a tubular member that is erected on the inner main surface of the package 5 20 in the bottom portion 52 2.
• the bottom 5 2 2 is arranged at one open end of the side 5 2 3.
• the cap member 526 is arranged on the top surface 525 which is the other opening end.
• the top surface part 5 2 5 is a surface facing the cap member 5 2 6 among the end surfaces of the side part 5 2 3.
• the side portion 52 3 is a tubular member that is arranged along the outer edge of the bottom portion 52 2 and has openings formed at both ends.
• a rectangular opening is formed in the side portion 5 23.
• the opening formed in the top surface portion 5 25 of the side portion 5 23 is the above-mentioned first opening (opening 5 2 13).
• the [021 1] side portion 52 3 has a plurality of lead pins 24 electrically connected to the semiconductor laser chip 40.
• the side 523 has eight lead pins 24.
• four lead pins 24 are arranged at one end in the X-axis direction of the side portions 52, and four lead pins 24 at the other end.
• the top surface portion 5 2 5 is similar to the top surface portion 1 2 5 according to Embodiment 2 in that the first projection portion
• the cap member 526 is a member attached to the top surface 525 of the main body 521.
• the cap member 526 has an inner surface arranged on the main body 521 side and an outer surface arranged on the back side of the inner surface. As shown in FIG. 35, the cap member 5 26 overlaps with the top surface 5 2 5 over the entire circumference of the opening 5 2 1 3 in a plan view of the bottom 5 2 2.
• the cap member 5 2 6 has an opening 5 2 6 3 at a position overlapping the opening 5 2 1 3 of the main body 5 2 1 in plan view of the bottom 5 2 2. ⁇ 0 2020/174982 53 ⁇ (: 171? 2020 /002996
• the opening 5 26 is an example of a second opening penetrating the cap member 5 26 in the vicinity of the center of the cap member 5 26 in a plan view.
• the material forming the cap member 526 is not particularly limited, but may be, for example, a 6- or 6-based alloy.
• the cap member 5 26 has a first protrusion 6 2 similarly to the cap member 1 26 according to the second embodiment.
• the window member 527 is a member that is disposed on the cap member 526 and has a light-transmitting property. In the present embodiment, the window member 5 27 closes the opening 5 2 6 3 of the cap member 5 26. In the present embodiment, as shown in FIGS. 34 to 36, the second collimator element 531 and the window member 527 are integrally formed. A portion of the window member 52 7 including the optical axis of the laser beam is the second collimator element 5 31.
• the semiconductor laser module 5 10 is provided with five second collimation elements 5 3 1 each facing four semiconductor laser chips 40 arranged in the So-axis direction and extending in the So-axis direction. As described above, by integrating the second collimator element 5 3 1 and the window member 5 27, the number of parts of the semiconductor laser module 5 10 can be reduced, so that the assembling process can be simplified.
• the window member 527 has a flat plate portion 528 arranged around the second collimator element 531.
• the flat plate portion 5 2 8 is joined to the cap member 5 2 6.
• Each of the plurality of semiconductor laser chips 40 has the same configuration as the semiconductor laser chip 40 according to the first embodiment.
• the semiconductor laser module 510 according to this embodiment includes 20 semiconductor laser chips 40 arranged in a matrix.
• five semiconductor laser chips 40 arranged in the X-axis direction are arranged in four sets in the So-axis direction.
• Each semiconductor laser chip 40 is supplied with power from the lead pin 24.
• the lead pin 24 located at the left end of FIG. 32 is a lead pin to which a high potential is applied, and the lead pin 24 located at the right end is a lead pin to which a low potential is applied.
• Each lead pin 24 located at the left end is connected to the corresponding lead pin 24 at the right end via five semiconductor laser chips 40 arranged in the X-axis direction and connected in series.
• the five elements arranged in the X-axis direction are ⁇ 0 2020/174982 54 ⁇ (: 171? 2020 /002996
• the same current can be supplied to the semiconductor laser chip 40.
• the lead pin 24 and the semiconductor laser chip 40 and the semiconductor laser chips 40 adjacent to each other in the X-axis direction are electrically connected by wires. More specifically, the figure
• a semiconductor laser chip 4 0 (from the left side) of the wire whose one end is connected to the n-side electrode (not shown) of the semiconductor laser chip 40 at the left end in 32
• the second semiconductor laser chip 40 is connected to the submount 42.
• the wire is connected to the side electrode (not shown) of the semiconductor laser chip 40 via the submount 42.
• the wire connects the second semiconductor laser chip 40 from the left and the third semiconductor laser chip 40 from the left, and the third semiconductor laser chip 40 from the left and the fourth semiconductor laser chip from the left.
• the semiconductor laser chip 40 is connected, and the fourth semiconductor laser chip 40 from the left and the fifth semiconductor laser chip 40 from the left are connected.
• Each of the plurality of submounts 42 has the same configuration as the submount 42 according to the first embodiment.
• the multiple submounts 42 are arranged in a matrix.
• Each submount 42 has a single semiconductor laser chip.
• the heat sink 544 is a base that is joined to the bottom portion 522, and five submounts 42 arranged in the X-axis direction are joined.
• the first collimator element 550 is a concave mirror that is arranged so as to face all the emission points of the five semiconductor laser chips 40 arranged in the X-axis direction in the package 520.
• the mirror surface 5 50 “reflects the laser light from the five emission points toward the opening 5 2 1 3 and also has the first surface of each laser light. The divergence angle in the axial direction of is reduced.
• the five laser beams reflected by the mirror surface 5 50 "are incident on the five second collimator elements 5 3 1.
• the first collimator element 550 is arranged such that the mirror surface 550, “, and the opening 521 3 and the opening 526 3 are overlapped with each other in the plan view of the bottom 522. ⁇ 02020/174982 55 ((171?2020/002996
• the mirror surface 55 0 "has a parabolic shape whose focal point is the emission point of the semiconductor laser chip 40. This allows the first axis of each laser beam emitted from the five emission points. The divergence angle in the direction can be reduced, which can reduce the number of parts of the semiconductor laser module 510 compared to the case of using the five first collimator elements that respectively reflect five laser beams. It is possible to reduce the trouble of adjusting the position of 5 50.
• Each of the five second collimator elements 531 is an element that reduces the divergence angle of the laser light reflected by the first collimator element 550 in the second axial direction.
• Four laser beams arranged in the so-axis direction are incident on each second collimator element 531.
• each of the five second collimator elements 5 3 1 is a cylindrical lens having a convex shape in a direction away from the bottom 5 22 2.
• each of the five second collimator elements 531 is a cylindrical lens having a cylindrical surface on the exit surface.
• Each of the five second collimator elements 531 reduces the divergence angle of the laser light in the X-axis direction, which is the second axis.
• the five second collimator elements 531 are arranged on the optical paths of the five laser beams reflected by the first collimator element 550, respectively.
• each of the five second collimator elements 5 3 1 arranged in the X-axis direction emits four laser beams arranged in the So-axis direction.
• 20 laser beams arranged in a matrix are emitted from the five second collimator elements 5 3 1.
• the semiconductor laser module 510 emits a plurality of laser beams arranged in a matrix. High power laser light can be obtained by collecting these laser lights.
• a semiconductor laser module according to the seventh embodiment will be described.
• the semiconductor laser module according to the present embodiment is different from the semiconductor laser module 510 according to the sixth embodiment in the configuration of the window member.
• the semiconductor laser module according to the sixth embodiment will be described. ⁇ 02020/174982 56 ⁇ (: 171?2020/002996
• FIG. 37 and Fig. 38 are a schematic plan view and a sectional view, respectively, showing the overall configuration of the semiconductor laser module 610 according to the present embodiment.
• FIG. 38 shows a cross section taken along the line X X X V I I X X X V I I shown in FIG.
• FIG. 39 is a schematic cross-sectional view showing the shape of the window member 62 7 according to the present embodiment.
• FIG. 39 shows a cross section of the window member 627 parallel to the X plane.
• the semiconductor laser module 61 0 includes a package 6 20. Similar to the semiconductor laser module 510 according to the sixth embodiment, the semiconductor laser module 61 0 includes a plurality of semiconductor laser chips 40 arranged in a matrix and four first collimator elements 550. Further prepare. In the present embodiment, the semiconductor laser module 610 further includes a plurality of submounts 42 arranged in a matrix and four heat sinks 544. As shown in FIG. 37, the semiconductor laser module 610 further includes a plurality of second collimator elements 631 arranged in a matrix.
• the package 620 is a housing in which a plurality of semiconductor laser chips 40 and four first collimator elements 550 are arranged inside. As shown in FIGS. 37 and 38, the package 620 has a main body 521, a cap member 526 attached to the top surface 525, and a window member 627.
• Main body 521 and cap member 526 have the same configuration as main body 521 and cap member 526 according to the sixth embodiment.
• the window member 627 is a member which is disposed on the cap member 526 and has a light-transmitting property. In this embodiment, the window member 6 27 closes the opening 5 2 6 3 of the cap member 5 26. In the present embodiment, as shown in FIGS. 37 to 39, the window member 627 has a flat plate portion 628 and a plurality of second collimator elements 631. In the present embodiment, the window member 627 has a plurality of second collimator elements 631. ⁇ 02020/174982 57 ⁇ (: 171?2020/002996
• the semiconductor laser module 6 10 includes a plurality of second collimator elements 6 3 1 arranged in a matrix.
• the second collimator element 6 3 1 is fixed to the flat plate portion 6 2 8 so that the second collimator element 6 3 1 is arranged at the position corresponding to the laser beam of each semiconductor laser chip 40. It becomes possible to do.
• it can be fixed to the flat plate portion 6 28. Therefore, even when the position of the output point 4 0 3 varies, efficiently, so it is possible to extract light in the same direction.
• the method of fixing the second collimator element 6 3 1 to the flat plate portion 6 2 8 is not particularly limited.
• the second collimator element 6 31 may be fixed to the flat plate portion 6 28 by spot welding, soldering or the like at a position apart from the optical path.
• a metal film should be formed in advance on portions other than the spot welding or the optical path for soldering, and the second collimator element 6 3 1 and the flat plate portion 6 28 should be formed on both sides.
• a non-reflective coating film may be formed in advance.
• the flat plate portion 628 is joined to the cap member 526.
• the plurality of second collimator elements 6 31 project from the flat plate portion 6 28 in a direction away from the bottom portion 52 2.
• the semiconductor laser module 610 includes a plurality of second collimator elements 631 arranged in a matrix.
• the semiconductor laser module 610 having such a configuration can also achieve the same effects as the semiconductor laser module according to the sixth embodiment.
• the semiconductor laser module according to the present disclosure has been described above based on each embodiment, but the present disclosure is not limited to each of the above embodiments.
• the top surface portion has the first protrusion portion 61 and the second protrusion portion 63
• the cap member has the first protrusion portion 62.
• the configurations of the portion and the second protrusion are not limited to this. Small cap member and top surface ⁇ 02020/174982 58 ⁇ (: 171?2020/002996
• At least one of them has a first protrusion whose cross-sectional area changes depending on the position in the direction perpendicular to the main surface of the bottom, and a cross-sectional area in the contact area where the cap member and the top surface overlap in plan view of the bottom. May have the same second protrusion.
• the cap member may have the second protrusion.
• only one of the cap member and the top surface portion may have the first protrusion.
• the semiconductor laser module of the present disclosure can be used, for example, as a processing laser light source.
• Second collimator element 40 440 Semiconductor laser chip

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• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Optics & Photonics (AREA)
• Semiconductor Lasers (AREA)

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• 2020
  • 2020-01-28 JP JP2021501770A patent/JP7372308B2/ja active Active
  • 2020-01-28 WO PCT/JP2020/002996 patent/WO2020174982A1/ja not_active Ceased
• 2021
  • 2021-08-23 US US17/409,110 patent/US12308605B2/en active Active
• 2025
  • 2025-05-14 US US19/208,286 patent/US20250273924A1/en active Pending

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