JPWO2024162073A1 - - Google Patents

Info

Publication number
JPWO2024162073A1
JPWO2024162073A1 JP2024574457A JP2024574457A JPWO2024162073A1 JP WO2024162073 A1 JPWO2024162073 A1 JP WO2024162073A1 JP 2024574457 A JP2024574457 A JP 2024574457A JP 2024574457 A JP2024574457 A JP 2024574457A JP WO2024162073 A1 JPWO2024162073 A1 JP WO2024162073A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024574457A
Other languages
Japanese (ja)
Other versions
JPWO2024162073A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024162073A1 publication Critical patent/JPWO2024162073A1/ja
Publication of JPWO2024162073A5 publication Critical patent/JPWO2024162073A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2024574457A 2023-01-30 2024-01-22 Pending JPWO2024162073A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023011751 2023-01-30
PCT/JP2024/001685 WO2024162073A1 (ja) 2023-01-30 2024-01-22 発光デバイス、発光モジュール、発光デバイスの製造方法、及び、発光モジュールの製造方法

Publications (2)

Publication Number Publication Date
JPWO2024162073A1 true JPWO2024162073A1 (https=) 2024-08-08
JPWO2024162073A5 JPWO2024162073A5 (https=) 2025-10-09

Family

ID=92146557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024574457A Pending JPWO2024162073A1 (https=) 2023-01-30 2024-01-22

Country Status (2)

Country Link
JP (1) JPWO2024162073A1 (https=)
WO (1) WO2024162073A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004265961A (ja) * 2003-02-28 2004-09-24 Furukawa Electric Co Ltd:The 半導体レーザ装置、半導体レーザモジュールおよび半導体レーザ装置の製造方法
JP4325232B2 (ja) * 2003-03-18 2009-09-02 日亜化学工業株式会社 窒化物半導体素子
JP7297121B2 (ja) * 2019-01-10 2023-06-23 三菱電機株式会社 半導体レーザ装置
JP7372308B2 (ja) * 2019-02-27 2023-10-31 ヌヴォトンテクノロジージャパン株式会社 半導体レーザモジュール
US20230187897A1 (en) * 2020-05-21 2023-06-15 Sony Group Corporation Semiconductor laser element and method of producing semiconductor laser element

Also Published As

Publication number Publication date
WO2024162073A1 (ja) 2024-08-08

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Legal Events

Date Code Title Description
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Effective date: 20250724