JPWO2024162073A1 - - Google Patents
Info
- Publication number
- JPWO2024162073A1 JPWO2024162073A1 JP2024574457A JP2024574457A JPWO2024162073A1 JP WO2024162073 A1 JPWO2024162073 A1 JP WO2024162073A1 JP 2024574457 A JP2024574457 A JP 2024574457A JP 2024574457 A JP2024574457 A JP 2024574457A JP WO2024162073 A1 JPWO2024162073 A1 JP WO2024162073A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023011751 | 2023-01-30 | ||
| PCT/JP2024/001685 WO2024162073A1 (ja) | 2023-01-30 | 2024-01-22 | 発光デバイス、発光モジュール、発光デバイスの製造方法、及び、発光モジュールの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024162073A1 true JPWO2024162073A1 (https=) | 2024-08-08 |
| JPWO2024162073A5 JPWO2024162073A5 (https=) | 2025-10-09 |
Family
ID=92146557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024574457A Pending JPWO2024162073A1 (https=) | 2023-01-30 | 2024-01-22 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024162073A1 (https=) |
| WO (1) | WO2024162073A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004265961A (ja) * | 2003-02-28 | 2004-09-24 | Furukawa Electric Co Ltd:The | 半導体レーザ装置、半導体レーザモジュールおよび半導体レーザ装置の製造方法 |
| JP4325232B2 (ja) * | 2003-03-18 | 2009-09-02 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP7297121B2 (ja) * | 2019-01-10 | 2023-06-23 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP7372308B2 (ja) * | 2019-02-27 | 2023-10-31 | ヌヴォトンテクノロジージャパン株式会社 | 半導体レーザモジュール |
| US20230187897A1 (en) * | 2020-05-21 | 2023-06-15 | Sony Group Corporation | Semiconductor laser element and method of producing semiconductor laser element |
-
2024
- 2024-01-22 JP JP2024574457A patent/JPWO2024162073A1/ja active Pending
- 2024-01-22 WO PCT/JP2024/001685 patent/WO2024162073A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024162073A1 (ja) | 2024-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250724 |