JP7370763B2 - 熱処理方法および熱処理装置 - Google Patents

熱処理方法および熱処理装置 Download PDF

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Publication number
JP7370763B2
JP7370763B2 JP2019151893A JP2019151893A JP7370763B2 JP 7370763 B2 JP7370763 B2 JP 7370763B2 JP 2019151893 A JP2019151893 A JP 2019151893A JP 2019151893 A JP2019151893 A JP 2019151893A JP 7370763 B2 JP7370763 B2 JP 7370763B2
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Prior art keywords
semiconductor wafer
substrate
heat treatment
emissivity
thin film
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JP2019151893A
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English (en)
Japanese (ja)
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JP2021034505A (ja
Inventor
智宏 上野
貴宏 北澤
仁秀 野崎
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Priority to JP2019151893A priority Critical patent/JP7370763B2/ja
Priority to TW109121249A priority patent/TWI760773B/zh
Priority to US16/918,049 priority patent/US11876006B2/en
Priority to CN202010725076.6A priority patent/CN112420498B/zh
Priority to KR1020200104602A priority patent/KR20210023748A/ko
Publication of JP2021034505A publication Critical patent/JP2021034505A/ja
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Publication of JP7370763B2 publication Critical patent/JP7370763B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2019151893A 2019-08-22 2019-08-22 熱処理方法および熱処理装置 Active JP7370763B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019151893A JP7370763B2 (ja) 2019-08-22 2019-08-22 熱処理方法および熱処理装置
TW109121249A TWI760773B (zh) 2019-08-22 2020-06-23 熱處理方法
US16/918,049 US11876006B2 (en) 2019-08-22 2020-07-01 Heat treatment method and heat treatment apparatus of light irradiation type
CN202010725076.6A CN112420498B (zh) 2019-08-22 2020-07-24 热处理方法以及热处理装置
KR1020200104602A KR20210023748A (ko) 2019-08-22 2020-08-20 열처리 방법 및 열처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019151893A JP7370763B2 (ja) 2019-08-22 2019-08-22 熱処理方法および熱処理装置

Publications (2)

Publication Number Publication Date
JP2021034505A JP2021034505A (ja) 2021-03-01
JP7370763B2 true JP7370763B2 (ja) 2023-10-30

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JP2019151893A Active JP7370763B2 (ja) 2019-08-22 2019-08-22 熱処理方法および熱処理装置

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Country Link
US (1) US11876006B2 (zh)
JP (1) JP7370763B2 (zh)
KR (1) KR20210023748A (zh)
CN (1) CN112420498B (zh)
TW (1) TWI760773B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7370763B2 (ja) * 2019-08-22 2023-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
KR20220150332A (ko) * 2020-03-10 2022-11-10 도쿄엘렉트론가부시키가이샤 트랙 시스템 내로의 통합을 위한 장파 적외선 열 센서
KR102583261B1 (ko) * 2020-10-28 2023-09-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2012074430A (ja) 2010-09-28 2012-04-12 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
JP2017041468A (ja) 2015-08-17 2017-02-23 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP2019129292A (ja) 2018-01-26 2019-08-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法

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JP2012074430A (ja) 2010-09-28 2012-04-12 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
JP2017041468A (ja) 2015-08-17 2017-02-23 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP2019129292A (ja) 2018-01-26 2019-08-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法

Also Published As

Publication number Publication date
TW202123341A (zh) 2021-06-16
JP2021034505A (ja) 2021-03-01
CN112420498B (zh) 2024-08-13
TWI760773B (zh) 2022-04-11
KR20210023748A (ko) 2021-03-04
CN112420498A (zh) 2021-02-26
US11876006B2 (en) 2024-01-16
US20210057245A1 (en) 2021-02-25

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