JP7342949B2 - 積層体、電子素子および積層体の製造方法 - Google Patents
積層体、電子素子および積層体の製造方法 Download PDFInfo
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- JP7342949B2 JP7342949B2 JP2021530490A JP2021530490A JP7342949B2 JP 7342949 B2 JP7342949 B2 JP 7342949B2 JP 2021530490 A JP2021530490 A JP 2021530490A JP 2021530490 A JP2021530490 A JP 2021530490A JP 7342949 B2 JP7342949 B2 JP 7342949B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 78
- 229910052799 carbon Inorganic materials 0.000 claims description 72
- 239000010409 thin film Substances 0.000 claims description 59
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 56
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 229910021389 graphene Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 39
- 125000004432 carbon atom Chemical group C* 0.000 claims description 26
- 150000001721 carbon Chemical group 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 83
- 239000007789 gas Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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Description
非特許文献1に開示されたグラフェンを用いて電子素子を製造した場合、高い変調特性が得られないという問題がある。そこで、電子素子の変調特性を向上することが可能な積層体、当該積層体を含む電子素子、および当該積層体の製造方法を提供することを目的の1つとする。
上記積層体によれば、電子素子の変調特性を向上することができる。
最初に本開示の実施態様を列記して説明する。本開示に係る積層体は、炭化珪素からなり、シリコン面である第1面を有するベース部と、第1面上に配置され、第1面に面する第1主面および第1主面とは反対側の主面である第2主面を含み、炭素原子からなる炭素原子薄膜と、を備える。炭素原子薄膜は、シリコン面を構成する珪素原子と結合した炭素原子を含む炭素原子層であるバッファ層およびグラフェン層のうちの少なくともいずれか一方を含む。第2主面は、ベース部を構成する炭化珪素のシリコン面に平行な複数のテラスと、複数のテラスを接続する複数のステップと、を含む。テラスの幅は、5μm以上500μm以下である。ステップの高さは、10nm以上500nm以下である。
次に、本開示の積層体の一実施形態を、図面を参照しつつ説明する。以下の図面において同一または相当する部分には同一の参照符号を付しその説明は繰り返さない。
本開示の実施の形態1に係る積層体について説明する。図1は、実施の形態1における積層体の構造を示す概略断面図である。図2は、図1に示す積層体を厚み方向に見た図である。図1において、積層体11の厚み方向は、矢印Tで示される。
次に、上記実施の形態1の積層体11を用いて作製される電子素子の一例であるFET(Field Effect Transister)について説明する。図13は、実施の形態2におけるFETの概略断面図である。図13を参照して、実施の形態2におけるFET15は、上記実施の形態1の積層体11を用いて作製されたものである。FET15は、実施の形態1と同様に積層されたベース部12および炭素原子薄膜13を備える積層体11を含む。なお、炭素原子薄膜13は、グラフェン層を含む。FET15は、さらに第1電極としてのソース電極16と、ソース電極16とは離れて配置される第2電極としてのドレイン電極17と、ソース電極16およびドレイン電極17と離れて配置される第3電極としてのゲート電極18と、ゲート絶縁膜19と、を含む。
12,32 ベース部
12A,32A 第1面
13,33 炭素原子薄膜
13A,33A 第2主面
13B 第1主面
15 FET
16 ソース電極
17 ドレイン電極
18 ゲート電極
19 ゲート絶縁膜
20 絶縁膜
21A バッファ層
21B,22A グラフェン層
23 珪素原子
24 炭素原子
25 水素原子
26A,34A 第1テラス
26B,34B 第2テラス
26C,34C 第3テラス
27A,35A 第1ステップ
27B,35B 第2ステップ
28A,28B,28C,28D,28E,29A,29B,29C,29D,29E 線
34D 第4テラス
35C 第3ステップ
51 炭化珪素基板
51A 第1基板面
61 加熱装置
62 チャンバー
62A 側壁部
62B 底壁部
62C 上壁部
63 サセプタ
63A 基板保持面
63C 第1空間
64 カバー部材
64A 上壁面
64B 側壁面
65 気体導入管
66 気体排出管
67 珪素層(第1部材)
L 直径
T,Y,F1,F2 矢印
H1,H2 高さ
S1,S2 間
W1,W2 幅
S10,S20,S30,S110,S120,S130,S140,S150 工程
Claims (5)
- 炭化珪素からなり、シリコン面である第1面を有するベース部と、
前記第1面上に配置され、前記第1面に面する第1主面および前記第1主面とは反対側の主面である第2主面を含み、炭素原子からなる炭素原子薄膜と、を備え、
前記炭素原子薄膜は、前記シリコン面を構成する珪素原子と結合した炭素原子を含む炭素原子層であるバッファ層およびグラフェン層のうちの少なくともいずれか一方を含み、
前記第2主面は、
前記ベース部を構成する炭化珪素のシリコン面に平行な複数のテラスと、
前記複数のテラスを接続する複数のステップと、を含み、
前記テラスの幅は、5μm以上500μm以下であり、
前記ステップの高さは、10nm以上500nm以下である、積層体。 - 前記グラフェン層の原子層の数は、3以下である、請求項1に記載の積層体。
- 請求項1または請求項2に記載の積層体と、
前記第2主面上に配置される第1電極と、
前記第1電極と離れて前記第2主面上に配置される第2電極と、を含む、電子素子。 - 炭化珪素からなり、シリコン面である第1面を有するベース部と、前記第1面上に配置され、前記第1面に面する第1主面および前記第1主面とは反対側の主面である第2主面を含み、炭素原子からなる炭素原子薄膜と、を備え、前記炭素原子薄膜は、前記シリコン面を構成する珪素原子と結合した炭素原子を含む炭素原子層であるバッファ層およびグラフェン層のうちの少なくともいずれか一方を含み、前記第2主面は、前記ベース部を構成する炭化珪素のシリコン面に平行な複数のテラスと、前記複数のテラスを接続する複数のステップと、を含み、前記テラスの幅は、5μm以上である積層体の製造方法であって、
シリコン面である第1基板面を有する炭化珪素基板を準備する工程と、
チャンバー内に配置されたカバー部材により閉じられた第1空間内に前記炭化珪素基板を配置する工程と、
前記第1空間内の前記炭化珪素基板を加熱することにより、前記第1基板面を含む第1領域から珪素原子を離脱させて、前記第1領域を、前記炭化珪素基板を構成する珪素原子と結合した炭素原子を含む炭素原子層であるバッファ層およびグラフェン層のうちの少なくともいずれか一つに変換する工程と、を備え、
前記第1空間内には、珪素原子を含有する物質を含む第1部材が配置される、積層体の製造方法。 - 前記第1部材は、前記カバー部材の内壁の少なくとも一部を覆う珪素層である、請求項4に記載の積層体の製造方法。
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