JP7336327B2 - 圧電センサ及び圧電センサの製造方法 - Google Patents

圧電センサ及び圧電センサの製造方法 Download PDF

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JP7336327B2
JP7336327B2 JP2019167727A JP2019167727A JP7336327B2 JP 7336327 B2 JP7336327 B2 JP 7336327B2 JP 2019167727 A JP2019167727 A JP 2019167727A JP 2019167727 A JP2019167727 A JP 2019167727A JP 7336327 B2 JP7336327 B2 JP 7336327B2
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Japan
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layer
stress
piezoelectric
applying
groove
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Japanese (ja)
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JP2021043171A5 (enExample
JP2021043171A (ja
Inventor
拓海 金城
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Japan Display Inc
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Japan Display Inc
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Priority to JP2019167727A priority Critical patent/JP7336327B2/ja
Priority to PCT/JP2020/028309 priority patent/WO2021049180A1/ja
Publication of JP2021043171A publication Critical patent/JP2021043171A/ja
Priority to US17/690,301 priority patent/US12135250B2/en
Publication of JP2021043171A5 publication Critical patent/JP2021043171A5/ja
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/16Measuring force or stress, in general using properties of piezoelectric devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/09Forming piezoelectric or electrostrictive materials
    • H10N30/098Forming organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/30Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302Sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/857Macromolecular compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
JP2019167727A 2019-09-13 2019-09-13 圧電センサ及び圧電センサの製造方法 Active JP7336327B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019167727A JP7336327B2 (ja) 2019-09-13 2019-09-13 圧電センサ及び圧電センサの製造方法
PCT/JP2020/028309 WO2021049180A1 (ja) 2019-09-13 2020-07-21 圧電センサ及び圧電センサの製造方法
US17/690,301 US12135250B2 (en) 2019-09-13 2022-03-09 Piezoelectric sensor and manufacturing method of piezoelectric sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019167727A JP7336327B2 (ja) 2019-09-13 2019-09-13 圧電センサ及び圧電センサの製造方法

Publications (3)

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JP2021043171A JP2021043171A (ja) 2021-03-18
JP2021043171A5 JP2021043171A5 (enExample) 2022-09-01
JP7336327B2 true JP7336327B2 (ja) 2023-08-31

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US (1) US12135250B2 (enExample)
JP (1) JP7336327B2 (enExample)
WO (1) WO2021049180A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023276955A1 (ja) * 2021-06-30 2023-01-05 株式会社村田製作所 曲げセンサ

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000346717A (ja) 1999-06-03 2000-12-15 Matsushita Electric Ind Co Ltd 圧電センサと圧電センサ荷重検出装置および挟み込み防止装置
JP2015118032A (ja) 2013-12-19 2015-06-25 株式会社村田製作所 圧電センサの検査方法
JP2015186910A (ja) 2014-10-20 2015-10-29 三井化学株式会社 積層体
WO2016002604A1 (ja) 2014-07-02 2016-01-07 三井化学株式会社 高分子圧電材料、積層体、高分子圧電材料の製造方法および積層体の製造方法
US20170179370A1 (en) 2015-12-22 2017-06-22 University-Industry Cooperation Group Of Kyung Hee University Piezoelectric material comprising poly(d-lactic acid)/poly(l-lactic acid) stereocomplex crystals
JP2017120850A (ja) 2015-12-28 2017-07-06 味の素株式会社 d14圧電定数を有する圧電フィルムおよびその製造方法
JP2018207092A (ja) 2017-05-31 2018-12-27 株式会社村田製作所 バスタブ型筐体に用いるセンサ及び電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002169164A (ja) * 2000-12-04 2002-06-14 Canon Inc 液晶配向膜および液晶表示素子
US8082641B2 (en) * 2007-06-01 2011-12-27 Xerox Corporation Method of manufacturing a ductile polymer-piezoelectric material composite
JPWO2015041195A1 (ja) * 2013-09-17 2017-03-02 株式会社村田製作所 押圧センサ
JP6269899B2 (ja) 2015-05-29 2018-01-31 株式会社村田製作所 圧電フィルムセンサおよび保持状態検出装置
CN112585504B (zh) * 2018-09-19 2025-05-02 三井化学株式会社 人体检测装置、床装置及人体检测系统

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000346717A (ja) 1999-06-03 2000-12-15 Matsushita Electric Ind Co Ltd 圧電センサと圧電センサ荷重検出装置および挟み込み防止装置
JP2015118032A (ja) 2013-12-19 2015-06-25 株式会社村田製作所 圧電センサの検査方法
WO2016002604A1 (ja) 2014-07-02 2016-01-07 三井化学株式会社 高分子圧電材料、積層体、高分子圧電材料の製造方法および積層体の製造方法
JP2015186910A (ja) 2014-10-20 2015-10-29 三井化学株式会社 積層体
US20170179370A1 (en) 2015-12-22 2017-06-22 University-Industry Cooperation Group Of Kyung Hee University Piezoelectric material comprising poly(d-lactic acid)/poly(l-lactic acid) stereocomplex crystals
JP2017120850A (ja) 2015-12-28 2017-07-06 味の素株式会社 d14圧電定数を有する圧電フィルムおよびその製造方法
JP2018207092A (ja) 2017-05-31 2018-12-27 株式会社村田製作所 バスタブ型筐体に用いるセンサ及び電子機器

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US12135250B2 (en) 2024-11-05
US20220196489A1 (en) 2022-06-23
WO2021049180A1 (ja) 2021-03-18
JP2021043171A (ja) 2021-03-18

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