JP7335818B2 - 架橋されたフッ素化ポリマーフィルムを調製するための方法 - Google Patents
架橋されたフッ素化ポリマーフィルムを調製するための方法 Download PDFInfo
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- JP7335818B2 JP7335818B2 JP2019568326A JP2019568326A JP7335818B2 JP 7335818 B2 JP7335818 B2 JP 7335818B2 JP 2019568326 A JP2019568326 A JP 2019568326A JP 2019568326 A JP2019568326 A JP 2019568326A JP 7335818 B2 JP7335818 B2 JP 7335818B2
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- C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
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- C08J2327/12—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08J2327/16—Homopolymers or copolymers of vinylidene fluoride
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/16—Applications used for films
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08L2312/00—Crosslinking
- C08L2312/06—Crosslinking by radiation
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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Description
(1)(i)フッ化ビニリデン(VDF)と、(ii)トリフルオロエチレン(TrFE)と、(iii)式‐CXCl=CX1X2の少なくとも1つの塩素化モノマー(式中、X、X1及びX2が、独立に、H、F又はCF3を表し、X,X1及びX2の最大1つがCF3を表すことが理解される)と、を含む、好ましくは、からなるモノマーの、ラジカル共重合によって得られる少なくとも1つのフッ素化コポリマーとのトリエチルアミンの反応の生成物と;(b)少なくとも1つの架橋剤と;(c)少なくとも1つの光重合開始剤と;(d)少なくとも1つの有機溶媒と、を含む、好ましくは、からなるインクを調合すること;
(2)前記インクをフィルム形態で基材に塗布すること;及び
(3)前記フィルムをUV照射すること、
の連続的工程を含む、方法である。
反応混合物中のTrFEの割合は、VDFとTrFEモノマーの合計に対して、好ましくは5~95mol%、特に5~10mol%、又は10~15mol%、又は15~20mol%、又は20~25mol%、又は25~30mol%、又は30~35mol%、又は35~40mol%、又は40~45mol%、又は45~50mol%、又は50~55mol%、又は55~60mol%、又は60~65mol%、又は65~70mol%、又は70~75mol%、又は75~80mol%、又は80~85mol%、又は85~90mol%、又は90~95mol%であり、15~55mol%の範囲が特に好ましく、
反応混合物中の塩素化モノマーの割合は、例えば、1~20mol%、特に5~15mol%を変動し得、
反応混合物中に存在してもよい追加のモノマーの割合は、0~20mol%、好ましくは5~15mol%に相当し得、
上記百分率は、反応混合物中に存在するモノマー全部に対して表されており、それらの合計は100%に等しい。
S1 なし
S2 SR499(エトキシ化トリメチロールプロパントリアクリレート)。
S3 SR351(トリメチロールプロパントリアクリレート)。
S4 ポリチオール(トリメチロールプロパントリス(3-メルカプトプロピオネート))。
TEAによって修飾され、様々な架橋剤の不存在下又は存在下で調合された同じターポリマー(S1、S2、S3及びS4)。
Claims (10)
- 架橋されたフッ素ポリマーフィルムを調製するための方法であって、
(1)(a)(i)フッ化ビニリデン(VDF)と、(ii)トリフルオロエチレン(TrFE)と、(iii)式CXCl=CX1X2の少なくとも1つの塩素化モノマー(X、X1及びX2は、独立に、H、F又はCF3を表し、X,X1及びX2の最大1つがCF3を表すことが理解される)と、を含むモノマーの、ラジカル共重合によって得られる少なくとも1つのフッ素化コポリマーとのトリエチルアミンの脱塩化水素反応の生成物と;(b)少なくとも1つの架橋剤と;(c)少なくとも1つの光重合開始剤と;(d)少なくとも1つの有機溶媒と、を含むインクを調合すること;
(2)前記インクをフィルム形態で基材に塗布すること;及び
(3)前記フィルムをUV照射すること、
の連続的工程を含み、
前記架橋剤が、ラジカル重合において反応性である少なくとも2つの(メタ)アクリル官能基を有し、ヒドロキシル、エステル、エーテル、ウレタン、エポキシ、シアヌレート又はイソシアヌレート官能基から選択される少なくとも1つの他の官能基を任意にさらに含んでもよいモノマー又はオリゴマーから選択されることを特徴とする、方法。 - 前記塩素化モノマーがクロロトリフルオロエチレン(CTFE)又はクロロフルオロエチレン(CFE)であることを特徴とする、請求項1に記載の方法。
- TrFEに由来する構成単位の割合が、VDF及びTrFEに由来する構成単位の合計に対して、5~95mol%の範囲であることを特徴とする、請求項1又は2に記載の方法。
- TrFEに由来する構成単位の割合が、VDF及びTrFEに由来する構成単位の合計に対して、5~55mol%の範囲であることを特徴とする、請求項1又は2に記載の方法。
- 前記塩素化モノマーに由来する構成単位の割合が、構成単位の全部に対して、1~20mol%で変動することを特徴とする、請求項1~4のいずれか一項に記載の方法。
- 任意に存在してもよい追加のモノマーに由来する構成単位が、構成単位の全部に対して、0~20mol%に相当することを特徴とする、請求項1~5のいずれか一項に記載の方法。
- 前記極性有機溶媒が、エステル、リン酸アルキル、炭酸アルキル、ケトン、アミド、含硫黄溶媒、ハロゲン化溶媒、及びこれらの混合物から選択されることを特徴とする、請求項1~6のいずれか一項に記載の方法。
- 請求項1~7のいずれか一項に記載の方法に従って得られる架橋されたフッ素ポリマーフィルム。
- 薄膜トランジスタ、光トランジスタ、電界効果トランジスタ及びコンデンサを含む電子デバイス若しくは光電子デバイス、触力覚装置、アクチュエータ、微小電気機械システム(MEMS)、センサー、操作可能カテーテル、点字キーボード、拡声器及びツイーターを含む音響デバイス、電気熱量デバイス、又はエネルギー回収装置の製造のための、請求項8に記載のフィルムの使用。
- 電界効果トランジスタ中のゲート誘電体層としての、請求項8に記載のフィルムの使用。
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PCT/FR2018/051818 WO2019020906A1 (fr) | 2017-07-28 | 2018-07-17 | Procédé de préparation d'un film de polymère fluoré réticulé |
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