JP7333396B2 - 研磨液、及び、化学的機械的研磨方法 - Google Patents

研磨液、及び、化学的機械的研磨方法 Download PDF

Info

Publication number
JP7333396B2
JP7333396B2 JP2021527444A JP2021527444A JP7333396B2 JP 7333396 B2 JP7333396 B2 JP 7333396B2 JP 2021527444 A JP2021527444 A JP 2021527444A JP 2021527444 A JP2021527444 A JP 2021527444A JP 7333396 B2 JP7333396 B2 JP 7333396B2
Authority
JP
Japan
Prior art keywords
polishing
general formula
hydrophilic group
polishing liquid
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021527444A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2020255581A5 (https=
JPWO2020255581A1 (https=
Inventor
哲也 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of JPWO2020255581A1 publication Critical patent/JPWO2020255581A1/ja
Publication of JPWO2020255581A5 publication Critical patent/JPWO2020255581A5/ja
Application granted granted Critical
Publication of JP7333396B2 publication Critical patent/JP7333396B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2021527444A 2019-06-20 2020-05-11 研磨液、及び、化学的機械的研磨方法 Active JP7333396B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019114674 2019-06-20
JP2019114674 2019-06-20
PCT/JP2020/018765 WO2020255581A1 (ja) 2019-06-20 2020-05-11 研磨液、及び、化学的機械的研磨方法

Publications (3)

Publication Number Publication Date
JPWO2020255581A1 JPWO2020255581A1 (https=) 2020-12-24
JPWO2020255581A5 JPWO2020255581A5 (https=) 2022-03-02
JP7333396B2 true JP7333396B2 (ja) 2023-08-24

Family

ID=74040477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021527444A Active JP7333396B2 (ja) 2019-06-20 2020-05-11 研磨液、及び、化学的機械的研磨方法

Country Status (5)

Country Link
US (1) US12448541B2 (https=)
JP (1) JP7333396B2 (https=)
KR (1) KR102727373B1 (https=)
TW (1) TWI863994B (https=)
WO (1) WO2020255581A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7244642B2 (ja) * 2019-06-20 2023-03-22 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273650A (ja) 2003-03-07 2004-09-30 Shin Etsu Chem Co Ltd 金属膜付基板の洗浄方法
JP2005223260A (ja) 2004-02-09 2005-08-18 Asahi Kasei Chemicals Corp 研磨粒子を含有する金属研磨用水系分散体
JP2008251677A (ja) 2007-03-29 2008-10-16 Fujifilm Corp 金属用研磨液及び研磨方法
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
JP2009064881A (ja) 2007-09-05 2009-03-26 Fujifilm Corp 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法
WO2014045937A1 (ja) 2012-09-18 2014-03-27 株式会社フジミインコーポレーテッド 研磨用組成物
WO2015129342A1 (ja) 2014-02-26 2015-09-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP2018107294A (ja) 2016-12-27 2018-07-05 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
WO2018159530A1 (ja) 2017-02-28 2018-09-07 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、研磨液原液収容体、化学的機械的研磨方法
JP2018157164A (ja) 2017-03-21 2018-10-04 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
WO2018217628A1 (en) 2017-05-25 2018-11-29 Fujifilm Planar Solutions, LLC Chemical mechanical polishing slurry for cobalt applications

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088243A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp 研磨液
CN103897602B (zh) * 2012-12-24 2017-10-13 安集微电子（上海）有限公司 一种化学机械抛光液及抛光方法
WO2016006631A1 (ja) 2014-07-09 2016-01-14 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
JP6377656B2 (ja) * 2016-02-29 2018-08-22 株式会社フジミインコーポレーテッド シリコン基板の研磨方法および研磨用組成物セット
JP6220090B2 (ja) * 2016-04-01 2017-10-25 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに磁気研磨方法
US20170330762A1 (en) * 2016-05-10 2017-11-16 Jsr Corporation Semiconductor treatment composition and treatment method
KR102626655B1 (ko) * 2017-02-08 2024-01-17 제이에스알 가부시끼가이샤 반도체 처리용 조성물 및 처리 방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273650A (ja) 2003-03-07 2004-09-30 Shin Etsu Chem Co Ltd 金属膜付基板の洗浄方法
JP2005223260A (ja) 2004-02-09 2005-08-18 Asahi Kasei Chemicals Corp 研磨粒子を含有する金属研磨用水系分散体
JP2008251677A (ja) 2007-03-29 2008-10-16 Fujifilm Corp 金属用研磨液及び研磨方法
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
JP2009064881A (ja) 2007-09-05 2009-03-26 Fujifilm Corp 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法
WO2014045937A1 (ja) 2012-09-18 2014-03-27 株式会社フジミインコーポレーテッド 研磨用組成物
WO2015129342A1 (ja) 2014-02-26 2015-09-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP2018107294A (ja) 2016-12-27 2018-07-05 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
WO2018159530A1 (ja) 2017-02-28 2018-09-07 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、研磨液原液収容体、化学的機械的研磨方法
JP2018157164A (ja) 2017-03-21 2018-10-04 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
WO2018217628A1 (en) 2017-05-25 2018-11-29 Fujifilm Planar Solutions, LLC Chemical mechanical polishing slurry for cobalt applications

Also Published As

Publication number Publication date
US20220089909A1 (en) 2022-03-24
TW202100682A (zh) 2021-01-01
KR102727373B1 (ko) 2024-11-08
KR20220007663A (ko) 2022-01-18
JPWO2020255581A1 (https=) 2020-12-24
TWI863994B (zh) 2024-12-01
US12448541B2 (en) 2025-10-21
WO2020255581A1 (ja) 2020-12-24

Similar Documents

Publication Publication Date Title
JP7331103B2 (ja) 研磨液、及び、化学的機械的研磨方法
JP6543323B2 (ja) 研磨用組成物及びコバルト膜の研磨方法
JP6568198B2 (ja) Ｃｍｐ後の洗浄組成物及びそれに関連する方法
KR100804353B1 (ko) 표면의 오염 물질 제거 방법 및 이에 유용한 조성물
JPWO2018174092A1 (ja) 半導体デバイス用基板の洗浄液、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板
JP7333396B2 (ja) 研磨液、及び、化学的機械的研磨方法
JP7263516B2 (ja) 研磨液、及び、化学的機械的研磨方法
US12006446B2 (en) Polishing liquid and chemical mechanical polishing method
TWI647305B (zh) 化學機械研磨後洗滌用組合物
CN116496853B (zh) 化学机械抛光后清洗组合物及半导体器件基板的清洗方法
JP7244642B2 (ja) 研磨液、及び、化学的機械的研磨方法
WO2021186241A1 (en) Cleaning composition for post chemical mechanical planarization and method of using the same
WO2025154728A1 (ja) 半導体基板用洗浄液、被対象物の洗浄方法、半導体デバイスの製造方法
JP2009064967A (ja) 半導体デバイス用基板の洗浄剤及びそれを用いた洗浄方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211129

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230424

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230801

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230814

R150 Certificate of patent or registration of utility model

Ref document number: 7333396

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150