TWI863994B - 研磨液及化學機械研磨方法 - Google Patents

研磨液及化學機械研磨方法 Download PDF

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Publication number
TWI863994B
TWI863994B TW109116202A TW109116202A TWI863994B TW I863994 B TWI863994 B TW I863994B TW 109116202 A TW109116202 A TW 109116202A TW 109116202 A TW109116202 A TW 109116202A TW I863994 B TWI863994 B TW I863994B
Authority
TW
Taiwan
Prior art keywords
polishing
polishing liquid
general formula
hydrophilic group
group
Prior art date
Application number
TW109116202A
Other languages
English (en)
Chinese (zh)
Other versions
TW202100682A (zh
Inventor
上村哲也
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202100682A publication Critical patent/TW202100682A/zh
Application granted granted Critical
Publication of TWI863994B publication Critical patent/TWI863994B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW109116202A 2019-06-20 2020-05-15 研磨液及化學機械研磨方法 TWI863994B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019114674 2019-06-20
JP2019-114674 2019-06-20

Publications (2)

Publication Number Publication Date
TW202100682A TW202100682A (zh) 2021-01-01
TWI863994B true TWI863994B (zh) 2024-12-01

Family

ID=74040477

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109116202A TWI863994B (zh) 2019-06-20 2020-05-15 研磨液及化學機械研磨方法

Country Status (5)

Country Link
US (1) US12448541B2 (https=)
JP (1) JP7333396B2 (https=)
KR (1) KR102727373B1 (https=)
TW (1) TWI863994B (https=)
WO (1) WO2020255581A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7244642B2 (ja) * 2019-06-20 2023-03-22 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201420739A (zh) * 2012-09-18 2014-06-01 福吉米股份有限公司 研磨用組成物
CN103897602A (zh) * 2012-12-24 2014-07-02 安集微电子（上海）有限公司 一种化学机械抛光液及抛光方法
TW201540817A (zh) * 2014-02-26 2015-11-01 福吉米股份有限公司 硏磨用組成物

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4010359B2 (ja) 2003-03-07 2007-11-21 信越化学工業株式会社 金属膜付基板の洗浄方法
JP2005223260A (ja) 2004-02-09 2005-08-18 Asahi Kasei Chemicals Corp 研磨粒子を含有する金属研磨用水系分散体
JP5121273B2 (ja) 2007-03-29 2013-01-16 富士フイルム株式会社 金属用研磨液及び研磨方法
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
JP2009064881A (ja) 2007-09-05 2009-03-26 Fujifilm Corp 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法
JP2009088243A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp 研磨液
WO2016006631A1 (ja) 2014-07-09 2016-01-14 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
JP6377656B2 (ja) * 2016-02-29 2018-08-22 株式会社フジミインコーポレーテッド シリコン基板の研磨方法および研磨用組成物セット
JP6220090B2 (ja) * 2016-04-01 2017-10-25 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに磁気研磨方法
US20170330762A1 (en) * 2016-05-10 2017-11-16 Jsr Corporation Semiconductor treatment composition and treatment method
JP6819280B2 (ja) * 2016-12-27 2021-01-27 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
KR102626655B1 (ko) * 2017-02-08 2024-01-17 제이에스알 가부시끼가이샤 반도체 처리용 조성물 및 처리 방법
KR102405560B1 (ko) * 2017-02-28 2022-06-07 후지필름 가부시키가이샤 연마액, 연마액의 제조 방법, 연마액 원액, 연마액 원액 수용체, 화학적 기계적 연마 방법
JP2018157164A (ja) * 2017-03-21 2018-10-04 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
US10676646B2 (en) * 2017-05-25 2020-06-09 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing slurry for cobalt applications

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201420739A (zh) * 2012-09-18 2014-06-01 福吉米股份有限公司 研磨用組成物
CN103897602A (zh) * 2012-12-24 2014-07-02 安集微电子（上海）有限公司 一种化学机械抛光液及抛光方法
TW201540817A (zh) * 2014-02-26 2015-11-01 福吉米股份有限公司 硏磨用組成物

Also Published As

Publication number Publication date
JP7333396B2 (ja) 2023-08-24
US20220089909A1 (en) 2022-03-24
TW202100682A (zh) 2021-01-01
KR102727373B1 (ko) 2024-11-08
KR20220007663A (ko) 2022-01-18
JPWO2020255581A1 (https=) 2020-12-24
US12448541B2 (en) 2025-10-21
WO2020255581A1 (ja) 2020-12-24

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