KR102727373B1 - 연마액, 및, 화학적 기계적 연마 방법 - Google Patents

연마액, 및, 화학적 기계적 연마 방법 Download PDF

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Publication number
KR102727373B1
KR102727373B1 KR1020217040540A KR20217040540A KR102727373B1 KR 102727373 B1 KR102727373 B1 KR 102727373B1 KR 1020217040540 A KR1020217040540 A KR 1020217040540A KR 20217040540 A KR20217040540 A KR 20217040540A KR 102727373 B1 KR102727373 B1 KR 102727373B1
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South Korea
Prior art keywords
polishing
hydrophilic group
general formula
group
ring
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Korean (ko)
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KR20220007663A (ko
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테츠야 카미무라
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후지필름 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H01L21/02123—
    • H01L21/02172—
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020217040540A 2019-06-20 2020-05-11 연마액, 및, 화학적 기계적 연마 방법 Active KR102727373B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019114674 2019-06-20
JPJP-P-2019-114674 2019-06-20
PCT/JP2020/018765 WO2020255581A1 (ja) 2019-06-20 2020-05-11 研磨液、及び、化学的機械的研磨方法

Publications (2)

Publication Number Publication Date
KR20220007663A KR20220007663A (ko) 2022-01-18
KR102727373B1 true KR102727373B1 (ko) 2024-11-08

Family

ID=74040477

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217040540A Active KR102727373B1 (ko) 2019-06-20 2020-05-11 연마액, 및, 화학적 기계적 연마 방법

Country Status (5)

Country Link
US (1) US12448541B2 (https=)
JP (1) JP7333396B2 (https=)
KR (1) KR102727373B1 (https=)
TW (1) TWI863994B (https=)
WO (1) WO2020255581A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7244642B2 (ja) * 2019-06-20 2023-03-22 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273650A (ja) 2003-03-07 2004-09-30 Shin Etsu Chem Co Ltd 金属膜付基板の洗浄方法
JP2018107294A (ja) 2016-12-27 2018-07-05 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
WO2018159530A1 (ja) 2017-02-28 2018-09-07 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、研磨液原液収容体、化学的機械的研磨方法
JP2018157164A (ja) 2017-03-21 2018-10-04 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
WO2018217628A1 (en) 2017-05-25 2018-11-29 Fujifilm Planar Solutions, LLC Chemical mechanical polishing slurry for cobalt applications

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223260A (ja) 2004-02-09 2005-08-18 Asahi Kasei Chemicals Corp 研磨粒子を含有する金属研磨用水系分散体
JP5121273B2 (ja) 2007-03-29 2013-01-16 富士フイルム株式会社 金属用研磨液及び研磨方法
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
JP2009064881A (ja) 2007-09-05 2009-03-26 Fujifilm Corp 金属用研磨用組成物及びそれを用いた化学的機械的研磨方法
JP2009088243A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp 研磨液
JP6198740B2 (ja) * 2012-09-18 2017-09-20 株式会社フジミインコーポレーテッド 研磨用組成物
CN103897602B (zh) * 2012-12-24 2017-10-13 安集微电子（上海）有限公司 一种化学机械抛光液及抛光方法
US10059860B2 (en) 2014-02-26 2018-08-28 Fujimi Incorporated Polishing composition
WO2016006631A1 (ja) 2014-07-09 2016-01-14 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
JP6377656B2 (ja) * 2016-02-29 2018-08-22 株式会社フジミインコーポレーテッド シリコン基板の研磨方法および研磨用組成物セット
JP6220090B2 (ja) * 2016-04-01 2017-10-25 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに磁気研磨方法
US20170330762A1 (en) * 2016-05-10 2017-11-16 Jsr Corporation Semiconductor treatment composition and treatment method
KR102626655B1 (ko) * 2017-02-08 2024-01-17 제이에스알 가부시끼가이샤 반도체 처리용 조성물 및 처리 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273650A (ja) 2003-03-07 2004-09-30 Shin Etsu Chem Co Ltd 金属膜付基板の洗浄方法
JP2018107294A (ja) 2016-12-27 2018-07-05 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
WO2018159530A1 (ja) 2017-02-28 2018-09-07 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、研磨液原液収容体、化学的機械的研磨方法
JP2018157164A (ja) 2017-03-21 2018-10-04 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
WO2018217628A1 (en) 2017-05-25 2018-11-29 Fujifilm Planar Solutions, LLC Chemical mechanical polishing slurry for cobalt applications

Also Published As

Publication number Publication date
JP7333396B2 (ja) 2023-08-24
US20220089909A1 (en) 2022-03-24
TW202100682A (zh) 2021-01-01
KR20220007663A (ko) 2022-01-18
JPWO2020255581A1 (https=) 2020-12-24
TWI863994B (zh) 2024-12-01
US12448541B2 (en) 2025-10-21
WO2020255581A1 (ja) 2020-12-24

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