JP7311609B2 - Mgoフィラーを含有する熱伝導性組成物および当該組成物が使用される方法およびデバイス - Google Patents
Mgoフィラーを含有する熱伝導性組成物および当該組成物が使用される方法およびデバイス Download PDFInfo
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- JP7311609B2 JP7311609B2 JP2021537773A JP2021537773A JP7311609B2 JP 7311609 B2 JP7311609 B2 JP 7311609B2 JP 2021537773 A JP2021537773 A JP 2021537773A JP 2021537773 A JP2021537773 A JP 2021537773A JP 7311609 B2 JP7311609 B2 JP 7311609B2
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- thermally conductive
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000003493 decenyl group Chemical group [H]C([*])=C([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 125000005066 dodecenyl group Chemical group C(=CCCCCCCCCCC)* 0.000 description 1
- SCPWMSBAGXEGPW-UHFFFAOYSA-N dodecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCC[Si](OC)(OC)OC SCPWMSBAGXEGPW-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 125000005448 ethoxyethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- WIGCFUFOHFEKBI-UHFFFAOYSA-N gamma-tocopherol Natural products CC(C)CCCC(C)CCCC(C)CCCC1CCC2C(C)C(O)C(C)C(C)C2O1 WIGCFUFOHFEKBI-UHFFFAOYSA-N 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- UHOKSCJSTAHBSO-UHFFFAOYSA-N indanthrone blue Chemical compound C1=CC=C2C(=O)C3=CC=C4NC5=C6C(=O)C7=CC=CC=C7C(=O)C6=CC=C5NC4=C3C(=O)C2=C1 UHOKSCJSTAHBSO-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 125000005064 octadecenyl group Chemical group C(=CCCCCCCCCCCCCCCCC)* 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000011242 organic-inorganic particle Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- 125000005575 polycyclic aromatic hydrocarbon group Chemical group 0.000 description 1
- 229920006294 polydialkylsiloxane Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 125000005063 tetradecenyl group Chemical group C(=CCCCCCCCCCCCC)* 0.000 description 1
- 239000003017 thermal stabilizer Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 125000005040 tridecenyl group Chemical group C(=CCCCCCCCCCCC)* 0.000 description 1
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 description 1
- UBMUZYGBAGFCDF-UHFFFAOYSA-N trimethoxy(2-phenylethyl)silane Chemical compound CO[Si](OC)(OC)CCC1=CC=CC=C1 UBMUZYGBAGFCDF-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- AXNJHBYHBDPTQF-UHFFFAOYSA-N trimethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OC)(OC)OC AXNJHBYHBDPTQF-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 125000005065 undecenyl group Chemical group C(=CCCCCCCCCC)* 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 235000019165 vitamin E Nutrition 0.000 description 1
- 229940046009 vitamin E Drugs 0.000 description 1
- 239000011709 vitamin E Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Description
本発明の熱伝導性組成物は、(A)オルガノポリシロキサン組成物と、(B)フィラー処理剤と、(C)熱安定剤と、(D)(D-1)最大1μmの数平均サイズを有する小粒子熱伝導性フィラー、(D-2)1~20μmの数平均サイズを有する中間サイズの熱伝導性フィラー、および(D-3)酸化マグネシウム(MgO)のみを含み得るか、または窒化アルミニウム(AlN)、酸化アルミニウム(Al2O3)、もしくは窒化ホウ素(BN)などの他の材料を含む粒子を含み得る20~200μmの数平均粒子サイズを有する大きいサイズのフィラー、の小さい、中間の、および大きい異なる平均粒子サイズを有する少なくとも3つの群を含む、熱伝導性フィラーと、を含む。組成物は、全組成物の少なくとも70体積%をもたらす量の熱伝導性フィラーを含み、他の熱伝導性粒子をさらに含み得る。粒子サイズに関係なく、MgOフィラー粒子の総量は、組成物全体の65体積%以下である。
R1 3SiO-(R1R2SiO)a(R1 2SiO)b-R3-SiR1 3(I)
式中、各R1は、独立して、脂肪族不飽和を含まない一価の有機基、すなわち、好ましくは1、2、3、または最大6個の炭素原子からなる直鎖または分岐鎖アルキル基である。R1はメチル基であってもよい。各R2はアリール基である。R2はフェニル基であってもよい。各R3は、酸素原子または二価の炭化水素基から選択される。R3が、酸素原子であるか、または二価の炭化水素基であるかは、式(I)のオルガノポリシロキサンを調製するために使用される方法によって決まる。二価の炭化水素基は、1つ以上、2個以上、3個以上、4個以上、5個以上の炭素原子からなることができ、同時に、一般に、最大6個、最大10個、または最大12個の炭素原子からなる。好ましくは、R3は、酸素原子である。下付き文字「a」は、0であってもよいか、または少なくとも1の平均値を有し、下付き文字「b」は、少なくとも1の平均値を有する。一般式(I)は、成分(A)の集合分子の平均分子式を示している。下付き文字「a」および下付き文字「b」は、合計(a+b)が、10以上、20以上、40以上の範囲の粘度を有し、かつ同時に、100以下、200以下、300以下、または最大400mPa.sであるが、良好な加工性のためには20~400mPa.sの範囲が望ましい粘度を有する式(I)のオルガノポリシロキサンを提供するのに十分であるような平均値を有し得る。例示的な粘度は100mPa.sである。合計(a+b)は、20以上、50以上、および80以上の範囲の正の数、かつ同時に最大100、120、150、または200の正の数である。合計(a+b)は、好ましくは20~150の範囲であり得る。a/bのモル比は、0~、0.2~、あるいは代わりに0.38~最大4.2の範囲であり得る。
R5 rSi(OR6)(4-r)、(II)
式中、下付き文字rは1、2、または3であり、好ましくはrは3である。
[R7 sR8 (3-s)SiO(R7 tR8 (2-t)SiO)m(R8 2SiO)n(R8 u(OR9)(2-u)SiO)o]vSiR8 [4-(v+x)](OR9)x(III)
成分(A)が硬化性組成物であるとき、熱伝導性組成物は、(E)硬化性触媒および/または(F)硬化抑制剤をさらに含み得る。熱伝導性組成物は、(G)スペーサー、(H)安定剤、(I)顔料、(J)ビヒクル、(K)湿潤剤、および(L)難燃剤から選択される1つ以上の追加の配合成分をさらに含み得る。
上記の熱伝導性組成物は、遠心ミキサー(Hauschildから市販されている)またはBaker-Perkinsミキサーなどの任意の簡便な混合装置を使用して、好ましくは周囲温度(20~25℃)以上の温度で、すべての配合成分を混合することによって、作製することができる。
上記の熱伝導性組成物は、熱界面材料(TIM)として使用され得る。熱伝導性シリコーン組成物は、熱源と放熱器との間の熱経路に沿って挿入することができる。熱伝導性シリコーン組成物は、熱源(例えば、(光)電子部品)および放熱器に任意の順序でまたは同時に適用することによって挿入することができる。熱伝導性シリコーン組成物は、任意の簡便な手段によって、例えば、熱伝導性シリコーン組成物を、湿式分配、スクリーン印刷、ステンシル印刷、または溶媒流涎することによって、挿入することができる。
上記の熱伝導性組成物は、熱発生部分または熱保有部分から、デバイスのヒートシンクまたは放熱部分に熱を伝達するためのさまざまな電子デバイスにおける熱界面材料としての使用に好適である。その熱伝導性組成物は、以前はそのような使用のために対応することができなかった6W/m・Kを超えるより高いレベルの熱伝導性を提供し、熱伝達の効率および有効性を改善し、同時に、実用的な取り扱い可能性を提供する。
Claims (9)
- (A)オルガノポリシロキサン組成物と、
(B)フィラー処理剤と、
(C)熱安定剤と、
(D)熱伝導性フィラーとを含む組成物であって、
前記熱伝導性フィラーが、
(D-1)0.1~1μmの数平均サイズを有する酸化亜鉛粒子、
(D-2)2~6μmの数平均サイズを有する球形のAl2O3粒子、
(D-3)100~150μmの数平均サイズを有するほぼ球状の酸化マグネシウム粒子、を含み、
前記酸化マグネシウム粒子の総量は、前記熱伝導性フィラーの5~50体積%の範囲であり、
成分(B)が、アルキルトリアルコキシシランおよびトリアルコキシシロキシ末端ジメチルポリシロキサンからなる群から選択され、前記トリアルコキシシロキシ末端ジメチルポリシロキサンが、さらにアルケニル末端封止されている、組成物。 - 成分(A)が、
一般式(I)を有するオルガノポリシロキサンを含み、
R1 3Si-(R1R2SiO)a(R1 2SiO)b-R3-SiR1 3 (I)
式中、各R1は、独立して、C1~C6アルキル基であり、各R2は、アリール基であり、各R3は、酸素原子または二価の炭化水素基から選択され、下付き文字aは、0であるか、または少なくとも1の平均値を有し、下付き文字bは、少なくとも1の平均値を有する、請求項1に記載の組成物。 - 成分(B)が、シリコーンおよび/またはシランを含む、請求項1または2に記載の組成物。
- 成分(B)が、n-デシルトリメトキシシラン、ならびに、ジメチルビニルシロキシ末端およびトリメトキシシロキシ末端ジメチルポリシロキサンから選択される、請求項1に記載の組成物。
- 成分(C)が、それに関連する金属を含むまたは含まないフタロシアニンである、請求項1~4のいずれか一項に記載の組成物。
- (G)スペーサー、(H)酸化防止剤安定剤、(I)顔料、(J)ビヒクル、または(K)湿潤剤、およびそれらの組み合わせから選択される追加の配合成分をさらに含む、請求項1~5のいずれか一項に記載の組成物。
- 請求項1~6のいずれかに記載の組成物を、熱源と放熱器との間の熱経路に沿って挿入することを含む方法。
- 前記熱源が、(光)電子部品を含む、請求項7に記載の方法。
- デバイスであって、
a)熱源と、
b)請求項1~6のいずれか一項に記載の組成物と、
c)放熱器と、を含み、
前記組成物は、前記熱源の表面から前記放熱器の表面まで延びている熱経路に沿って、前記熱源と前記放熱器との間に配置されている、デバイス。
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