JP7308595B2 - イメージセンサ - Google Patents

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Publication number
JP7308595B2
JP7308595B2 JP2018126170A JP2018126170A JP7308595B2 JP 7308595 B2 JP7308595 B2 JP 7308595B2 JP 2018126170 A JP2018126170 A JP 2018126170A JP 2018126170 A JP2018126170 A JP 2018126170A JP 7308595 B2 JP7308595 B2 JP 7308595B2
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Japan
Prior art keywords
protective film
photoelectric conversion
image sensor
film
organic film
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JP2018126170A
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English (en)
Japanese (ja)
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JP2020004935A5 (enExample
JP2020004935A (ja
Inventor
修平 奈良
裕之 関根
隆行 石野
文識 田村
良和 畠澤
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Tianma Japan Ltd
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Tianma Japan Ltd
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Publication date
Application filed by Tianma Japan Ltd filed Critical Tianma Japan Ltd
Priority to JP2018126170A priority Critical patent/JP7308595B2/ja
Priority to CN201910542833.3A priority patent/CN110676270B/zh
Priority to US16/459,792 priority patent/US10914846B2/en
Publication of JP2020004935A publication Critical patent/JP2020004935A/ja
Publication of JP2020004935A5 publication Critical patent/JP2020004935A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2018126170A 2018-07-02 2018-07-02 イメージセンサ Active JP7308595B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018126170A JP7308595B2 (ja) 2018-07-02 2018-07-02 イメージセンサ
CN201910542833.3A CN110676270B (zh) 2018-07-02 2019-06-21 图像传感器
US16/459,792 US10914846B2 (en) 2018-07-02 2019-07-02 Image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018126170A JP7308595B2 (ja) 2018-07-02 2018-07-02 イメージセンサ

Publications (3)

Publication Number Publication Date
JP2020004935A JP2020004935A (ja) 2020-01-09
JP2020004935A5 JP2020004935A5 (enExample) 2021-08-05
JP7308595B2 true JP7308595B2 (ja) 2023-07-14

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Family Applications (1)

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JP2018126170A Active JP7308595B2 (ja) 2018-07-02 2018-07-02 イメージセンサ

Country Status (3)

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US (1) US10914846B2 (enExample)
JP (1) JP7308595B2 (enExample)
CN (1) CN110676270B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102569741B1 (ko) * 2018-10-31 2023-08-22 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 이를 포함하는 디지털 엑스레이 검출기
CN111508986A (zh) * 2020-04-29 2020-08-07 Tcl华星光电技术有限公司 一种传感器及其制作方法以及光电转换装置
JP7731879B2 (ja) * 2020-06-08 2025-09-01 ローム株式会社 半導体装置、電子機器
US11804503B2 (en) * 2020-06-12 2023-10-31 Sharp Kabushiki Kaisha Photoelectric conversion device and x-ray imaging device
JP7601696B2 (ja) * 2021-04-16 2024-12-17 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 フォトダイオードアレイ及びイメージセンサ
CN117321770A (zh) * 2022-04-29 2023-12-29 京东方科技集团股份有限公司 探测基板、其制作方法及平板探测器
JP2024013440A (ja) * 2022-07-20 2024-02-01 シャープディスプレイテクノロジー株式会社 光電変換パネル、ｘ線撮像パネル、及び光電変換パネルの製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245078A (ja) 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置
JP2014078651A (ja) 2012-10-12 2014-05-01 Nlt Technologies Ltd 光電変換装置及びその製造方法並びにｘ線画像検出装置
JP2014116429A (ja) 2012-12-07 2014-06-26 Japan Display Inc 撮像装置及び撮像表示システム
JP2015090957A (ja) 2013-11-07 2015-05-11 Ｎｌｔテクノロジー株式会社 イメージセンサ及びその製造方法
JP2015144298A (ja) 2015-03-04 2015-08-06 キヤノン株式会社 半導体装置の製造方法
WO2015146855A1 (ja) 2014-03-28 2015-10-01 富士フイルム株式会社 放射線検出装置及び放射線検出装置の製造方法
WO2016002563A1 (ja) 2014-06-30 2016-01-07 シャープ株式会社 撮像パネル及びｘ線撮像装置
WO2016195000A1 (ja) 2015-06-04 2016-12-08 シャープ株式会社 フォトセンサ基板
WO2018056255A1 (ja) 2016-09-21 2018-03-29 シャープ株式会社 撮像パネル及びその製造方法
WO2018070349A1 (ja) 2016-10-11 2018-04-19 シャープ株式会社 撮像パネル及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465824B1 (en) * 2000-03-09 2002-10-15 General Electric Company Imager structure
TW201403804A (zh) * 2012-07-05 2014-01-16 Sony Corp 固體攝像裝置及其製造方法、以及電子機器
JP2014081358A (ja) * 2012-09-27 2014-05-08 Fujifilm Corp 放射線画像検出装置
JP2015012239A (ja) * 2013-07-01 2015-01-19 ソニー株式会社 撮像素子および電子機器
JP2017152656A (ja) * 2016-02-26 2017-08-31 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサおよびその製造方法
JP2018084485A (ja) * 2016-11-24 2018-05-31 コニカミノルタ株式会社 放射線画像撮影装置
KR102506885B1 (ko) * 2018-02-27 2023-03-06 삼성전자주식회사 이미지 센서

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245078A (ja) 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置
JP2014078651A (ja) 2012-10-12 2014-05-01 Nlt Technologies Ltd 光電変換装置及びその製造方法並びにｘ線画像検出装置
JP2014116429A (ja) 2012-12-07 2014-06-26 Japan Display Inc 撮像装置及び撮像表示システム
JP2015090957A (ja) 2013-11-07 2015-05-11 Ｎｌｔテクノロジー株式会社 イメージセンサ及びその製造方法
WO2015146855A1 (ja) 2014-03-28 2015-10-01 富士フイルム株式会社 放射線検出装置及び放射線検出装置の製造方法
WO2016002563A1 (ja) 2014-06-30 2016-01-07 シャープ株式会社 撮像パネル及びｘ線撮像装置
JP2015144298A (ja) 2015-03-04 2015-08-06 キヤノン株式会社 半導体装置の製造方法
WO2016195000A1 (ja) 2015-06-04 2016-12-08 シャープ株式会社 フォトセンサ基板
WO2018056255A1 (ja) 2016-09-21 2018-03-29 シャープ株式会社 撮像パネル及びその製造方法
WO2018070349A1 (ja) 2016-10-11 2018-04-19 シャープ株式会社 撮像パネル及びその製造方法

Also Published As

Publication number Publication date
CN110676270B (zh) 2024-07-23
US20200003911A1 (en) 2020-01-02
US10914846B2 (en) 2021-02-09
CN110676270A (zh) 2020-01-10
JP2020004935A (ja) 2020-01-09

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