CN110676270B - 图像传感器 - Google Patents
图像传感器 Download PDFInfo
- Publication number
- CN110676270B CN110676270B CN201910542833.3A CN201910542833A CN110676270B CN 110676270 B CN110676270 B CN 110676270B CN 201910542833 A CN201910542833 A CN 201910542833A CN 110676270 B CN110676270 B CN 110676270B
- Authority
- CN
- China
- Prior art keywords
- protective film
- photoelectric conversion
- film
- organic film
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000001681 protective effect Effects 0.000 claims abstract description 121
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 195
- 239000004065 semiconductor Substances 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 5
- 229910020286 SiOxNy Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 3
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 3
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018126170A JP7308595B2 (ja) | 2018-07-02 | 2018-07-02 | イメージセンサ |
| JP2018-126170 | 2018-07-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110676270A CN110676270A (zh) | 2020-01-10 |
| CN110676270B true CN110676270B (zh) | 2024-07-23 |
Family
ID=69008066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910542833.3A Active CN110676270B (zh) | 2018-07-02 | 2019-06-21 | 图像传感器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10914846B2 (enExample) |
| JP (1) | JP7308595B2 (enExample) |
| CN (1) | CN110676270B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102569741B1 (ko) * | 2018-10-31 | 2023-08-22 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 이를 포함하는 디지털 엑스레이 검출기 |
| CN111508986A (zh) * | 2020-04-29 | 2020-08-07 | Tcl华星光电技术有限公司 | 一种传感器及其制作方法以及光电转换装置 |
| JP7731879B2 (ja) * | 2020-06-08 | 2025-09-01 | ローム株式会社 | 半導体装置、電子機器 |
| US11804503B2 (en) * | 2020-06-12 | 2023-10-31 | Sharp Kabushiki Kaisha | Photoelectric conversion device and x-ray imaging device |
| JP7601696B2 (ja) * | 2021-04-16 | 2024-12-17 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | フォトダイオードアレイ及びイメージセンサ |
| CN117321770A (zh) * | 2022-04-29 | 2023-12-29 | 京东方科技集团股份有限公司 | 探测基板、其制作方法及平板探测器 |
| JP2024013440A (ja) * | 2022-07-20 | 2024-02-01 | シャープディスプレイテクノロジー株式会社 | 光電変換パネル、ｘ線撮像パネル、及び光電変換パネルの製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6465824B1 (en) * | 2000-03-09 | 2002-10-15 | General Electric Company | Imager structure |
| JP2010245078A (ja) | 2009-04-01 | 2010-10-28 | Epson Imaging Devices Corp | 光電変換装置、エックス線撮像装置 |
| TW201403804A (zh) * | 2012-07-05 | 2014-01-16 | Sony Corp | 固體攝像裝置及其製造方法、以及電子機器 |
| JP2014081358A (ja) * | 2012-09-27 | 2014-05-08 | Fujifilm Corp | 放射線画像検出装置 |
| JP6099035B2 (ja) | 2012-10-12 | 2017-03-22 | Ｎｌｔテクノロジー株式会社 | 光電変換装置及びその製造方法並びにｘ線画像検出装置 |
| JP2014116429A (ja) | 2012-12-07 | 2014-06-26 | Japan Display Inc | 撮像装置及び撮像表示システム |
| JP2015012239A (ja) * | 2013-07-01 | 2015-01-19 | ソニー株式会社 | 撮像素子および電子機器 |
| JP6384822B2 (ja) | 2013-11-07 | 2018-09-05 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | イメージセンサ及びその製造方法 |
| JP6074111B2 (ja) * | 2014-03-28 | 2017-02-01 | 富士フイルム株式会社 | 放射線検出装置及び放射線検出装置の製造方法 |
| US10353082B2 (en) | 2014-06-30 | 2019-07-16 | Sharp Kabushiki Kaisha | Imaging panel and X-ray imaging device |
| JP5968481B2 (ja) | 2015-03-04 | 2016-08-10 | キヤノン株式会社 | 半導体装置の製造方法 |
| US10276611B2 (en) | 2015-06-04 | 2019-04-30 | Sharp Kabushiki Kaisha | Photosensor substrate |
| JP2017152656A (ja) * | 2016-02-26 | 2017-08-31 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | イメージセンサおよびその製造方法 |
| US10804314B2 (en) | 2016-09-21 | 2020-10-13 | Sharp Kabushiki Kaisha | Imaging panel and method for producing same |
| JPWO2018070349A1 (ja) | 2016-10-11 | 2019-08-29 | シャープ株式会社 | 撮像パネル及びその製造方法 |
| JP2018084485A (ja) * | 2016-11-24 | 2018-05-31 | コニカミノルタ株式会社 | 放射線画像撮影装置 |
| KR102506885B1 (ko) * | 2018-02-27 | 2023-03-06 | 삼성전자주식회사 | 이미지 센서 |
-
2018
- 2018-07-02 JP JP2018126170A patent/JP7308595B2/ja active Active
-
2019
- 2019-06-21 CN CN201910542833.3A patent/CN110676270B/zh active Active
- 2019-07-02 US US16/459,792 patent/US10914846B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7308595B2 (ja) | 2023-07-14 |
| US20200003911A1 (en) | 2020-01-02 |
| US10914846B2 (en) | 2021-02-09 |
| CN110676270A (zh) | 2020-01-10 |
| JP2020004935A (ja) | 2020-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110676270B (zh) | 图像传感器 | |
| US9806123B2 (en) | Image sensor and manufacturing method thereof | |
| TWI410129B (zh) | 固態攝影裝置以及其設計方法 | |
| US8039809B2 (en) | Sensor panel and image detecting device | |
| US7105829B2 (en) | Radiation detector having radiation sensitive semiconductor | |
| CN102376814B (zh) | 光电转换元件及其制造方法 | |
| US7875949B2 (en) | Image sensor device with submicron structure | |
| KR102517726B1 (ko) | 디지털 엑스레이 검출기용 어레이 기판과 이를 포함하는 디지털 엑스레이 검출기 및 그 제조 방법 | |
| WO2016163347A1 (ja) | フォトセンサ基板 | |
| US7804071B2 (en) | Image detection device | |
| TW201423962A (zh) | Ｘ光偵測裝置 | |
| US20130048960A1 (en) | Photoelectric conversion substrate, radiation detector, and radiographic image capture device | |
| US11011665B2 (en) | Thin film transistor array substrate for high-resolution digital X-ray detector and high-resolution digital X-ray detector including the same | |
| CN101206263B (zh) | 放射线检测器 | |
| US20170357011A1 (en) | Imaging panel and x-ray imaging device | |
| US20130048860A1 (en) | Photoelectric conversion substrate, radiation detector, and radiographic image capture device | |
| JP4478215B2 (ja) | 耐腐食性イメージング装置 | |
| CN111081715B (zh) | 薄膜晶体管阵列基板和包括其的数字x射线检测器 | |
| CN115152024A (zh) | 光检测装置 | |
| US11764170B2 (en) | Sensing substrate and electronic device | |
| US10615198B1 (en) | Isolation structures in film-based image sensors | |
| KR102674957B1 (ko) | 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판과 이를 포함하는 디지털 엑스레이 검출기 및 이의 제조 방법 | |
| KR20190075728A (ko) | 디지털 엑스레이 검출기 패널 및 그 제조 방법 | |
| JP5089159B2 (ja) | イメージセンサｉｃの製造方法 | |
| TW202332027A (zh) | 光感測裝置以及製造光感測裝置的方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TG01 | Patent term adjustment | ||
| TG01 | Patent term adjustment |