JP7303868B2 - 位相解明光学及びx線半導体計量 - Google Patents
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
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Description
Claims (20)
- ウェハ計量ツールを用い、半導体ウェハ上にあるターゲットの表面を計測し、更に
プロセッサを用いることで、前記ターゲットの表面の幾何形状計測結果と整合させるべく且つ前記ターゲットの表面に存在すると期待される物質の散乱密度を用い前記表面のボクセルマップを固定する方法であり、固定済表面ボクセル全ての散乱密度が均一となるようにスケーリングが行われる方法。 - 請求項1に記載の方法であって、前記ウェハ計量ツールが限界寸法走査型電子顕微鏡である方法。
- 請求項1に記載の方法であり、前記ウェハ計量ツールが反射型小角X線スキャタロメータである方法であって、更に、反射モードに従い構成された計測ツールで以て前記ターゲットの表面を計測する方法。
- 請求項3に記載の方法であって、前記計測ツールが透過型小角X線スキャタロメータである方法。
- 請求項1に記載の方法であり、前記ウェハ計量ツールが光スキャタロメータである方法であって、更に、透過技術を用いるよう構成された計測ツールで以て前記ターゲットの表面を計測する方法。
- 請求項5に記載の方法であって、前記計測ツールが透過型小角X線スキャタロメータである方法。
- 請求項1に記載の方法であって、前記ターゲットの表面を計測する際に、そのターゲットの幾何形状を計測することで幾何計測結果を提供する方法。
- 請求項1に記載の方法であって、前記ターゲット内の物質に関連付けられている一組の値からボクセルへと散乱値を採取する方法。
- 請求項8に記載の方法であって、前記散乱値が連続的に浮動する方法。
- 半導体ウェハ上にあるターゲットの表面を計測するよう構成されたウェハ計量ツールと、
前記ウェハ計量ツールと電子通信するプロセッサと、
を備え、前記プロセッサが、前記ターゲットの表面の幾何形状計測結果と整合させるべく且つ前記ターゲットの表面に存在すると期待される物質の散乱密度を用い、前記表面のボクセルマップを固定するよう構成されており、固定済表面ボクセル全ての散乱密度が均一となるようにスケーリングが行われるシステム。 - 請求項10に記載のシステムであって、前記ウェハ計量ツールが限界寸法走査型電子顕微鏡であるシステム。
- 請求項10に記載のシステムであり、前記ウェハ計量ツールが反射型小角X線スキャタロメータであるシステムであって、更に、反射モードを用いるよう構成されており前記プロセッサと電子通信する計測ツールを備えるシステム。
- 請求項12に記載のシステムであって、前記計測ツールが透過型小角X線スキャタロメータであるシステム。
- 請求項10に記載のシステムであり、前記ウェハ計量ツールが光スキャタロメータであるシステムであって、更に、透過技術を用いるよう構成されており前記プロセッサと電子通信する計測ツールを備えるシステム。
- 請求項14に記載のシステムであって、前記計測ツールが透過型小角X線スキャタロメータであるシステム。
- 請求項10に記載のシステムであって、更に、透過技術を用いるよう構成されており前記プロセッサと電子通信する計測ツールを備え、前記ウェハ計量ツールが、更に、前記ターゲットの幾何形状を計測するよう構成されているシステム。
- 請求項16に記載のシステムであって、前記ウェハ計量ツールが反射型小角X線スキャタロメータ又は光スキャタロメータであり、前記計測ツールが透過型小角X線スキャタロメータであるシステム。
- 請求項16に記載のシステムであって、更に、前記ターゲット内の物質に関連付けられている複数個の散乱値を格納するよう構成された電子データ格納ユニットを備え、その電子データ格納ユニットが前記プロセッサと電子通信するシステム。
- 請求項18に記載のシステムであって、前記プロセッサが、前記ターゲット内の物質に関連付けられている一組の値からボクセルへと散乱値を採取するよう構成されているシステム。
- 請求項19に記載のシステムであって、前記散乱値が連続的に浮動するシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/047,818 | 2018-07-27 | ||
US16/047,818 US10677586B2 (en) | 2018-07-27 | 2018-07-27 | Phase revealing optical and X-ray semiconductor metrology |
PCT/US2019/043541 WO2020023810A1 (en) | 2018-07-27 | 2019-07-26 | Phase revealing optical and x-ray semiconductor metrology |
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JP2021531663A JP2021531663A (ja) | 2021-11-18 |
JP7303868B2 true JP7303868B2 (ja) | 2023-07-05 |
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US (1) | US10677586B2 (ja) |
JP (1) | JP7303868B2 (ja) |
KR (1) | KR102518206B1 (ja) |
CN (1) | CN112368812B (ja) |
IL (1) | IL280009B2 (ja) |
TW (1) | TWI780347B (ja) |
WO (1) | WO2020023810A1 (ja) |
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US11610297B2 (en) * | 2019-12-02 | 2023-03-21 | Kla Corporation | Tomography based semiconductor measurements using simplified models |
CN112384749B (zh) | 2020-03-13 | 2022-08-19 | 长江存储科技有限责任公司 | 用于半导体芯片孔几何形状度量的系统和方法 |
Citations (2)
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JP2002082063A (ja) | 2000-09-05 | 2002-03-22 | Komatsu Electronic Metals Co Ltd | ウエハの表面検査装置及び検査方法 |
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JP2002082063A (ja) | 2000-09-05 | 2002-03-22 | Komatsu Electronic Metals Co Ltd | ウエハの表面検査装置及び検査方法 |
JP2010025836A (ja) | 2008-07-23 | 2010-02-04 | Hitachi High-Technologies Corp | 外観検査方法および外観検査装置、半導体検査装置ならびに半導体ウェハの断面検査装置 |
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IL280009B2 (en) | 2023-07-01 |
US20200080836A1 (en) | 2020-03-12 |
TWI780347B (zh) | 2022-10-11 |
KR20210027497A (ko) | 2021-03-10 |
JP2021531663A (ja) | 2021-11-18 |
CN112368812B (zh) | 2022-03-25 |
IL280009A (en) | 2021-03-01 |
TW202007958A (zh) | 2020-02-16 |
WO2020023810A1 (en) | 2020-01-30 |
US10677586B2 (en) | 2020-06-09 |
CN112368812A (zh) | 2021-02-12 |
KR102518206B1 (ko) | 2023-04-04 |
IL280009B1 (en) | 2023-03-01 |
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