JP7301053B2 - Terminal protection tape and method for manufacturing semiconductor device with electromagnetic wave shielding film - Google Patents

Description

The present invention relates to a terminal protection tape and a method for manufacturing a semiconductor device with an electromagnetic wave shielding film using the same.
This application claims priority based on Japanese Patent Application No. 2018-149700 filed in Japan on August 8, 2018, the content of which is incorporated herein.

Conventionally, when a multi-pin LSI package used for an MPU, a gate array, etc. is mounted on a printed circuit board, as a semiconductor device equipped with a plurality of electronic components, the connection pads are made of eutectic solder, high-temperature solder, gold, or the like. A convex electrode (hereinafter referred to as a "terminal" in this specification) is used. Then, a mounting method is adopted in which these terminals are brought into face-to-face contact with corresponding terminal portions on a chip mounting substrate, and fusion/diffusion bonding is performed.

With the spread of personal computers, the Internet has become commonplace, and today, smartphones and tablet terminals are also connected to the Internet, and digitized images, music, photos, text information, etc. are transmitted via the Internet using wireless communication technology. is increasing. Furthermore, with the spread of IoT (Internet of Things), semiconductor devices such as sensors, RFID (Radio frequency identifier), MEMS (Micro Electro Mechanical Systems), and wireless components are becoming smarter in various application fields such as home appliances and automobiles. A revolutionary change is about to be made in packaging technology for use in

As electronic devices continue to evolve, the level of demand for semiconductor devices is increasing year by year. In particular, when trying to meet the needs for high performance, miniaturization, high integration, low power consumption, and low cost, countermeasures against heat and noise are two important points.

In response to such measures against heat and noise, a method of forming a shield layer by covering an electronic component module with a conductive material has been adopted, as disclosed in Patent Document 1, for example. In Patent Literature 1, a shield layer is formed by heating and hardening a conductive resin that is applied to the top surface and side surfaces of an electronic component module that has been separated into pieces.

Methods such as sputtering, ion plating, and spray coating are also known as methods for coating a semiconductor device with terminals with a conductive material to form a shield layer.

JP 2011-151372 A

In the method for manufacturing an electronic component disclosed in Patent Document 1, the external terminal electrodes provided on the rear surface of the aggregate substrate are coated with a conductive resin while being embedded in the adhesive sheet. Since the masking portion is provided at a predetermined position of the adhesive sheet, it is possible to prevent electrical short-circuiting between the external terminal electrode and the electromagnetic wave shielding film.

However, there are cases where the external terminal electrodes cannot be sufficiently embedded in the adhesive sheet. There is a risk of short circuit. Moreover, providing a masking portion at a predetermined position of the adhesive sheet is complicated in terms of process.

Accordingly, the present invention provides a terminal protection tape used in the process of forming an electromagnetic wave shielding film on a semiconductor device with terminals, which is capable of embedding even terminal electrodes that have irregularities such as solder balls and tend to float. To provide a terminal protection tape capable of removing and not causing floating, and a manufacturing method of a semiconductor device with an electromagnetic wave shielding film using the tape.

That is, the present invention provides the following terminal protection tape and a method for manufacturing a semiconductor device with an electromagnetic wave shielding film using the same.

[1] A terminal protection tape used in a step of forming an electromagnetic wave shielding film on a semiconductor device with terminals,
having a viscoelastic layer,
In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50°C is 0.2 or more,
For the viscoelastic layer, a cylindrical evaluation sample with a diameter of 8 mm and a thickness of about 1 mm is subjected to a constant torsional strain of 10% (36 °) at 50 ° C., and the maximum relaxation modulus is measured. _{The following} formula ₍ 1) A terminal protection tape in which the relaxation elastic modulus fluctuation value X2 obtained based on 1) satisfies the following formula (2).
X2=logG(t) _max -logG(t) _min (1)
0.12≦X2 (2)
[2] The terminal protection tape according to [1], wherein the viscoelastic layer has an embedding layer and an adhesive layer. [3] The adhesive layer, the embedding layer, and the base material are laminated in this order. The tape for terminal protection according to the above [2].
[4] The terminal protection tape according to [3], which is a double-sided tape having the pressure-sensitive adhesive layer, the embedding layer, the substrate, and the second pressure-sensitive adhesive layer in this order.
[5] embedding the terminals of the terminal-equipped semiconductor device in the viscoelastic layer of the terminal protection tape according to any one of [1] to [4];
forming an electromagnetic wave shielding film on the exposed surface of the semiconductor device with terminals not embedded in the viscoelastic layer of the terminal protection tape;
A method of manufacturing a semiconductor device with an electromagnetic wave shielding film comprising:
[6] A step of embedding terminals of a semiconductor device assembly with terminals in the viscoelastic layer of the terminal protection tape according to any one of [1] to [4];
a step of dicing the semiconductor device assembly with terminals to obtain semiconductor devices with terminals in which the terminals are embedded in the viscoelastic layer of the terminal protection tape;
forming an electromagnetic wave shielding film on the exposed surface of the semiconductor device with terminals not embedded in the viscoelastic layer of the terminal protection tape;
A method of manufacturing a semiconductor device with an electromagnetic wave shielding film comprising:

According to the present invention, there is provided a terminal protection tape used in a step of forming an electromagnetic wave shielding film on a semiconductor device with a terminal, which can embed even a terminal electrode such as a solder ball which tends to float, and can float. Provided are a terminal protection tape which does not cause , and a method for manufacturing a semiconductor device with an electromagnetic wave shielding film using the same.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically one embodiment of the tape for terminal protection of this invention. FIG. 4 is a cross-sectional view schematically showing another embodiment of the terminal protection tape of the present invention. FIG. 4 is a cross-sectional view schematically showing another embodiment of the terminal protection tape of the present invention. FIG. 4 is a cross-sectional view schematically showing another embodiment of the terminal protection tape of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically one embodiment of the manufacturing method of the semiconductor device with an electromagnetic shielding film of this invention. FIG. 4 is a cross-sectional view schematically showing another embodiment of the method for manufacturing a semiconductor device with an electromagnetic wave shielding film according to the present invention; It is sectional drawing which shows typically the example of the manufacturing method of the semiconductor device with an electromagnetic shielding film which concerns on a comparative example.

FIG. 1 is a cross-sectional view schematically showing one embodiment of the terminal protection tape of the present invention. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, there are cases where the main parts are enlarged for convenience, and the dimensional ratios of each component are the same as the actual ones. not necessarily.

The terminal protection tape 1 shown in FIG. 1 is a terminal protection tape 1 used in a step of forming an electromagnetic wave shielding film on a semiconductor device with terminals, and comprises a viscoelastic layer 12 composed of an embedding layer 13 and an adhesive layer 14. have. In the dynamic viscoelasticity measurement of the viscoelastic layer 12, the value of tan δ at 50°C is 0.2 or more.

In addition, for the viscoelastic layer, a cylindrical evaluation sample with a diameter of 8 mm and a thickness of about 1 mm (meaning 0.9 mm to 1.1 mm) was twisted at a constant twist of 10% (that is, 36 °) at 50 ° C. The maximum relaxation modulus G(t) _max (MPa) and the maximum relaxation modulus G(t) _max when measuring the relaxation modulus by applying a strain were measured within 1 second after the measurement. A relaxation modulus fluctuation value X2 obtained from the minimum relaxation modulus G(t) _min (MPa) based on the following formula (1) satisfies the following formula (2).
X2=logG(t) _max -logG(t) _min (1)
0.12≦X2 (2)

In the terminal protection tape of the present embodiment, the viscoelastic layer may consist of only the embedding layer, or may have the embedding layer and the adhesive layer.
As shown in FIG. 1, the terminal protection tape of this embodiment may include a release film 21 on the outermost layer of the viscoelastic layer 12 on the embedding layer 13 side. A peeling film 20 may be provided on the outermost layer on the side of .
In the terminal protection tape 1 of the embodiment, the viscoelastic layer 12 is composed of the embedding layer 13 and the adhesive layer 14. The viscoelastic layer 12 has the function of the embedding layer 13 and The viscoelastic layer 12 may consist only of the embedding layer 13 as long as the relaxation elastic modulus fluctuation value X2 is within a predetermined value range. , and part of the configuration shown in FIG. 1 may be changed, deleted, or added within the scope that does not impair the effects of the present invention.

The terminal protection tape 1 shown in FIG. 1 is obtained by peeling off both release films 20 and 21, placing the semiconductor device on the support, and pressing the terminal-equipped semiconductor device thereon with the terminal side down. It can be used in a step of embedding terminals in the viscoelastic layer 12 and forming an electromagnetic wave shielding film thereon. In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50° C. is 0.2 or more. However, even a terminal electrode that tends to float can be embedded, and the terminal forming surface of the target semiconductor device with a terminal can be brought into close contact with the viscoelastic layer 12 . Furthermore, since the relaxation elastic modulus fluctuation value X2 of the viscoelastic layer 12 is within the range of the predetermined value represented by the formula (2), the terminal is held as it is buried, and the terminal electrode is held without floating. and the electromagnetic wave shielding film can be prevented from being electrically short-circuited, and there is no need to provide a complicated masking portion or the like in the process.

As shown in the terminal protection tape 2 of FIG. 2, the terminal protection tape of the present embodiment may have an adhesive layer 14, an embedding layer 13, and a base material 11 in this order. A release film 20 may be provided as the outermost layer of the viscoelastic layer 12 on the adhesive layer 14 side.

The terminal protection tape 2 shown in FIG. 2 is obtained by peeling off the release film 20 and pressing the terminal-equipped semiconductor device with the terminal side down onto the viscoelastic layer 12 on the substrate 11 as a support. , a terminal is embedded in the viscoelastic layer 12, and an electromagnetic wave shielding film is formed thereon. In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50° C. is 0.2 or more. However, even a terminal electrode that tends to float can be embedded, and the terminal forming surface of the target semiconductor device with a terminal can be brought into close contact with the viscoelastic layer 12 . Furthermore, since the relaxation elastic modulus fluctuation value X2 of the viscoelastic layer 12 is within the range of the predetermined value represented by the formula (2), the terminal is held as it is buried, and the terminal electrode is held without floating. and the electromagnetic wave shielding film can be prevented from being electrically short-circuited, and there is no need to provide a complicated masking portion or the like in the process.

As shown in the terminal protection tape 3 of FIG. 3, the terminal protection tape of the present embodiment has an adhesive layer 14, an embedding layer 13, and a base material 11 in this order. A release film 20 may be provided on the outermost layer of the elastic layer 12 on the pressure-sensitive adhesive layer 14 side, and a second adhesive film 20 for bonding to the support may be provided on the opposite side of the base material 11 from the viscoelastic layer 12 . It may be provided with the adhesive layer 15 (that is, the laminated adhesive layer), or may be a double-sided tape provided with the release film 22 as the outermost layer on the side of the second adhesive layer 15 .

The terminal protection tape 3 shown in FIG. 3 peels off the release film 22 and is fixed to the support 30 as shown in FIG. It can be used in the process of pressing the semiconductor device with the terminal side down, burying the terminals in the viscoelastic layer 12, and forming an electromagnetic wave shielding film thereon. In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50° C. is 0.2 or more. It is possible to embed even a terminal electrode that is likely to float, and the terminal formation surface of the target semiconductor device with a terminal can be brought into close contact with the viscoelastic layer 12 . Furthermore, since the relaxation elastic modulus fluctuation value X2 of the viscoelastic layer 12 is within the range of the predetermined value represented by the formula (2), the terminal is held as it is buried, and the terminal electrode is held without floating. and the electromagnetic wave shielding film can be prevented from being electrically short-circuited, and there is no need to provide a complicated masking portion or the like in the process.

Next, each layer constituting the terminal protection tape of the present embodiment will be described.

◎Viscoelastic layer In the terminal protection tape of the present embodiment, the viscoelastic layer protects the terminal forming surface (in other words, circuit surface) of the terminal-equipped semiconductor device and the terminals provided on this terminal forming surface. In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50 ° C. is 0.2 or more, and the viscoelastic layer has a cylindrical shape with a diameter of 8 mm and a thickness of about 1 mm. The maximum relaxation modulus G(t) _max (MPa) and the maximum relaxation modulus G The relaxation modulus fluctuation value X2 obtained based on the following formula (1) from the minimum relaxation modulus G (t) _min (MPa) measured up to 1 second after the measurement of (t) _max is given by the following formula: (2) is satisfied.
X2=logG(t) _max -logG(t) _min (1)
0.12≦X2 (2)

As used herein, “tan δ of the viscoelastic layer at 50°C” can be obtained by dividing the loss elastic modulus G″ (50°C) of the viscoelastic layer at 50°C by the storage elastic modulus G′ (50°C). In addition, the later-described "tan δ of the viscoelastic layer at 25°C" can be obtained by dividing the loss elastic modulus G" (25°C) of the viscoelastic layer at 25°C by the storage elastic modulus G' (25°C). can be done.
In addition, in this specification, the “loss modulus G” and “storage modulus G′” of the viscoelastic layer are obtained by setting a viscoelastic layer with a thickness of 310 μm in a shear viscosity measuring device, frequency: 1 Hz, temperature rise Speed: can be obtained by heating from room temperature to 100° C. under measurement conditions of 10° C./min.

As used herein, the “maximum relaxation modulus G(t) _max ” of the viscoelastic layer is measured by preparing a cylindrical evaluation sample with a diameter of 8 mm and a thickness of about 1 mm, using a viscoelasticity measuring device (e.g., Anton paar company, product name "MCR302"), and with reference to JIS K7244-7, rotate the jig at 50 ° C to twist the sample, and apply a constant torsional strain of 10% (that is, 36 °) Controlled addition can be continued and the relaxation modulus G(t) can be derived from the measured results. In the present specification, the “minimum relaxation modulus G(t) _min ” is the relaxation modulus G(t) measured within 1 second after the maximum relaxation modulus G(t) _max is measured. can be derived from

One surface of the viscoelastic layer 12 is adhered to the terminal forming surface of the semiconductor device. The one surface of the viscoelastic layer 12 is preferably an adhesive layer. As a result, the adhesive strength when the semiconductor device with terminals is attached to the adhesive layer 14 is improved.

The relaxation modulus fluctuation value X2 must be 0.12 or more, preferably 0.13 or more, and more preferably 0.14 or more. When the relaxation elastic modulus fluctuation value X2 is equal to or more than the lower limit value, when the semiconductor device with terminals is adhered to the adhesive layer 14, the terminals are held buried and are not lifted. The relaxation modulus variation value X2 is preferably 0.42 or less, more preferably 0.35 or less, and particularly preferably 0.30 or less. When the relaxed elastic modulus fluctuation value X2 is equal to or less than the upper limit, there is no risk of excessive embedding, and optimum embedding properties (hereinafter also referred to as embedding properties) can be obtained.
The upper limit and lower limit of the relaxation modulus fluctuation value X2 can be arbitrarily combined.
For example, the relaxation modulus fluctuation value X2 is preferably 0.12 or more and 0.42 or less, more preferably 0.13 or more and 0.35 or less, and 0.14 or more and 0.30 or less. More preferred.

In dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50° C. is 0.2 or more, preferably 0.3 or more, more preferably 0.5 or more. When the value of tan δ at 50° C. is equal to or higher than the lower limit, the followability to the terminal electrode and the fluidity of the viscoelastic layer can be ensured, thereby improving the embedding property of the terminal electrode. The value of tan δ at 50° C. can be 6.5 or less, can be 6.0 or less, and can be 5.4 or less.
The upper limit and lower limit of tan δ at 50°C can be combined arbitrarily.
For example, tan δ at 50°C is preferably 0.2 or more and 6.5 or less, more preferably 0.3 or more and 6.0 or less, and further preferably 0.5 or more and 5.4 or less. .

The storage elastic modulus G' (50°C) (MPa) at 50°C of the viscoelastic layer preferably satisfies the following formula (3).
0.01 MPa ≤ G' (50°C) ≤ 15 MPa (3)

By satisfying the expression (3), even terminal electrodes of various shapes and sizes, such as solder balls, which tend to float, can be more easily buried.
G' (50°C) is preferably 0.01 to 15 MPa, more preferably 0.02 to 12.5 MPa, even more preferably 0.03 to 10 MPa.

In the terminal protection tape of the present embodiment, the storage elastic modulus G' (25°C) (MPa) of the viscoelastic layer at 25°C preferably satisfies the following formula (4).
0.05 MPa ≤ G' (25°C) ≤ 20 MPa (4)

By satisfying the formula (4), the shape of the terminal protection tape at room temperature can be easily maintained, and oozing out to the end of the embedding layer can be easily suppressed.
G' (25°C) is preferably 0.05 to 20 MPa, more preferably 0.06 to 15 MPa, even more preferably 0.07 to 10 MPa.

The thickness d1 of the viscoelastic layer can be adjusted according to the terminal height h0 of the semiconductor device to be applied. The thickness of the viscoelastic layer is preferably 80-800 μm, more preferably 100-790 μm, and particularly preferably 130-780 μm.
When the thickness of the viscoelastic layer is equal to or greater than the lower limit, even a terminal electrode such as a solder ball can be embedded. Moreover, since the thickness of the embedding layer is equal to or less than the upper limit, it is possible to prevent the terminal protection tape from becoming excessively thick.
Here, the "thickness of the viscoelastic layer" means the thickness of the entire viscoelastic layer. means the total thickness of
In the present specification, the "layer thickness" is a value represented by the average of thicknesses measured at five randomly selected locations, and is measured using a constant pressure thickness gauge according to JIS K77130. be able to.

It is preferable that the thickness d1 (μm) of the viscoelastic layer and the height h0 (μm) of the terminal satisfy the following formula (5).
1.2≦d1/h0≦5.0 (5)

By satisfying the formula (5), even terminal electrodes of various shapes and sizes, such as solder balls, which are likely to float, can be embedded more easily.
d1/h0 is preferably 1.2 to 5.0, more preferably 1.3 to 5.0, even more preferably 1.4 to 5.0.

In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 25°C may be 0.2 or more, may be 0.10 to 1.4, and may be 0.20 to 1.0 is preferred, and 0.30 to 0.8 is more preferred.

When the terminal-forming surface of the semiconductor device with terminals is brought into close contact with the viscoelastic layer 12 , it is preferable to bring the terminal-forming surface of the semiconductor device with terminals into direct contact with the adhesive layer 14 of the viscoelastic layer 12 .
At this time, the pressure-sensitive adhesive layer 14 is preferably set harder than the embedding layer 13 in order to prevent adhesive residue on the terminal forming surface and the terminals.

O Embedding Layer In the terminal protection tape of the present embodiment, the embedding layer refers to a layer among the viscoelastic layers that embeds and protects the terminals of the terminal-equipped semiconductor device.
The embedding layer is sheet-like or film-like, and its constituent material is not particularly limited as long as it satisfies the above conditions. As used herein, the term "sheet-like or film-like" means a thin film-like material with small variations in in-plane thickness and flexibility.

For example, the purpose is to suppress deformation of the viscoelastic layer that covers the terminal formation surface of a semiconductor device with terminals to be protected, due to reflection of the shape of the terminal present on the semiconductor surface. In this case, urethane (meth)acrylate resins, acrylic resins, and the like can be cited as preferred constituent materials of the embedding layer from the viewpoint of further improving the sticking property of the embedding layer.

The embedded layer may be only one layer (single layer), or may be a plurality of layers of two or more layers. Not limited.
In this specification, not only the case of the buried layer, but the phrase "a plurality of layers may be the same or different" means "all the layers may be the same or all the layers may be different." Only some of the layers may be the same", and further, "multiple layers are different from each other" means "at least one of the constituent material and thickness of each layer is different from each other" means

The thickness of the embedded layer can be adjusted according to the height of the terminals on the terminal-forming surface of the terminal-equipped semiconductor device to be protected. The elastic layer is preferably thicker than the pressure-sensitive adhesive layer within the range of 80 to 800 μm, preferably 50 to 600 μm, more preferably 70 to 550 μm, and 80 to 500 μm. is particularly preferred. When the thickness of the embedding layer is equal to or greater than the lower limit, a viscoelastic layer having higher terminal protection performance can be formed. In addition, when the thickness of the embedding layer is equal to or less than the upper limit, the productivity and suitability for winding in a roll shape are improved.
Here, the "thickness of the embedded layer" means the thickness of the entire embedded layer. means.

The embedding layer preferably has a soft property suitable for embedding the terminals, and is preferably softer than the adhesive layer.

(Composition for forming buried layer)
The buried layer can be formed using a buried layer-forming composition containing its constituent materials.
For example, the embedding layer can be formed in the target site by applying the embedding layer forming composition to the surface to be formed of the embedding layer, drying it if necessary, and curing it by irradiating it with an energy beam. In addition, by applying the embedding layer forming composition to the release film, drying it as necessary, and curing it by irradiation with energy rays, it is possible to form the embedding layer with the desired thickness, which can be applied to the desired site. Buried layers can also be transferred. A more specific method for forming the buried layer will be described later in detail together with the method for forming other layers. The content ratio of the components that do not vaporize at room temperature in the embedding layer-forming composition is usually the same as the content ratio of the components in the embedding layer. Here, "ordinary temperature" means a temperature at which no particular cooling or heating is applied, that is, a normal temperature, and includes, for example, a temperature of 15 to 30°C.

The embedding layer-forming composition may be applied by a known method such as air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, A method using various coaters such as a screen coater, a Meyer bar coater, and a kiss coater can be used.

Drying conditions for the burying layer-forming composition are not particularly limited. However, when the burying layer-forming composition contains a solvent described later, it is preferable to heat and dry the composition. It is preferable to dry under the conditions of 10 seconds to 5 minutes.
When the embedded layer-forming composition is energy ray-curable, it is preferably cured by energy ray irradiation.

Examples of the buried layer-forming composition include a buried layer-forming composition (I) containing an acrylic resin.

{Buried layer forming composition (I)}
The embedding layer forming composition (I) contains an acrylic resin.
The embedded layer-forming composition (I) is composed of the adhesive resin (I-1a), which is an acrylic resin, and an energy ray-curable compound among the first adhesive composition (I-1), which will be described later. Of the composition containing at least one selected from the group, the first adhesive composition (I-2), an unsaturated group is introduced into the side chain of the adhesive resin (I-1a), which is an acrylic resin. A composition containing the energy ray-curable adhesive resin (1-2a) can be used as the embedded layer-forming composition (I).

The adhesive resin (I-1a) and the energy ray-curable compound used in the embedding layer-forming composition (I) are the adhesive resin (I-1a) used in the first adhesive composition (I-1) described later. and the same as the explanation of the energy ray-curable compound.
The adhesive resin (I-2a) used in the embedding layer-forming composition (I) is the same as the adhesive resin (I-2a) used in the first adhesive composition (I-2) described below. .
The buried layer-forming composition (I) preferably further contains a cross-linking agent. The cross-linking agent used in the embedded layer-forming composition (I) is the same as the cross-linking agent used in the first pressure-sensitive adhesive composition (I-1) and the first pressure-sensitive adhesive composition (I-2) described below. .
The buried layer-forming composition (I) may further contain a photopolymerization initiator and other additives. The photopolymerization initiator and other additives used in the embedding layer-forming composition (I) are the first adhesive composition (I-1) and the first adhesive composition (I-2) described later. The explanation is the same as for the polymerization initiator and other additives.
The buried layer-forming composition (I) may contain a solvent. The solvents used in the embedding layer-forming composition (I) and the first adhesive composition (I-2) are the same as the solvents used in the first adhesive composition (I-1) described below.

By adjusting one or both of the molecular weight of the adhesive resin (I-1a) and the molecular weight of the energy ray-curable compound in the embedding layer forming composition (I), the embedding layer embeds the terminals. It can be designed to have soft properties suitable for
In addition, by adjusting the content of the cross-linking agent in the embedding layer forming composition (I), the embedding layer can be designed to have soft properties suitable for embedding terminals.

<<Method for Producing Buried Layer Forming Composition>>
A buried layer-forming composition such as the buried layer-forming composition (I) is obtained by blending each component for constituting the composition.
There are no particular restrictions on the order of addition of each component when blending, and two or more components may be added at the same time.
When a solvent is used, the solvent may be mixed with any compounding component other than the solvent and used by diluting this compounding component in advance, or any compounding component other than the solvent may be diluted in advance. You may use by mixing a solvent with these compounding ingredients, without preserving.
The method of mixing each component at the time of blending is not particularly limited, and may be selected from known methods such as a method of mixing by rotating a stirrer or stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves. It can be selected as appropriate.
The temperature and time at which each component is added and mixed are not particularly limited as long as each compounded component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30°C.

{Composition of Buried Layer}
The composition of the embedded layer in the present embodiment is obtained by removing the solvent from the above-described embedded layer-forming composition (I).
The embedding layer forming composition (I) comprises an adhesive resin (I-1a) which is an acrylic resin among the first adhesive composition (I-1), which will be described later, and an energy ray-curable compound, In the embedding layer (1) in the case of a composition containing is preferred, 55 to 95 mass % is more preferred, and 60 to 90 mass % is even more preferred. As another aspect of the present invention, the content of the adhesive resin (I-1a), which is an acrylic resin, relative to the total mass of the embedding layer (1) may be 45 to 90% by mass, or 50 to 85% by mass. %. The content of the energy ray-curable compound is preferably 1 to 50% by mass, more preferably 5 to 45% by mass, relative to the total mass of the embedding layer (1). When the embedding layer (1) contains a cross-linking agent, the content of the cross-linking agent is preferably 0.1 to 10% by mass, more preferably 0.2 to 9% by mass, relative to the total mass of the embedding layer (1). is more preferable, and 0.3 to 8% by mass is even more preferable.

The embedded layer-forming composition (I) contains an energy ray-curable adhesive resin (1-2a) in which an unsaturated group is introduced into the side chain of the adhesive resin (I-1a), which is an acrylic resin. In the embedding layer (2) in the case of a composition that % by mass is preferable, 15 to 65% by mass is more preferable, and 20 to 60% by mass is even more preferable. As another aspect of the present invention, the content of the adhesive resin (I-1a), which is an acrylic resin, relative to the total mass of the embedding layer (2) may be 10 to 60% by mass. It may be up to 55 mass %, or it may be 20 to 55 mass %. When the embedding layer (2) contains a cross-linking agent, the content of the cross-linking agent is preferably 0.1 to 10% by mass, more preferably 0.2 to 9% by mass, relative to the total mass of the embedding layer (2). is more preferable, and 0.3 to 7.8% by mass is even more preferable. The embedding layer (2) of the present embodiment may further contain the adhesive resin (I-1a), which is the acrylic resin. In this case, the content of the adhesive resin (I-1a), which is an acrylic resin, in the total mass of the embedding layer (2) is preferably 35 to 85% by mass, more preferably 40 to 80% by mass. More preferably, 35 to 75% by mass is even more preferable. Further, when the embedding layer (2) of the present embodiment further contains the adhesive resin (I-1a), which is an acrylic resin, the adhesive resin (1-2a) with respect to 100 parts by mass of the adhesive resin The content of (1-1a) is preferably 40 to 150 parts by mass, more preferably 50 to 140 parts by mass, even more preferably 60 to 130 parts by mass.

Adhesive resin (I-1a) that is acrylic resin contained in embedding layer (1), energy ray-curable compound, unsaturated side chain of adhesive resin (I-1a) contained in embedding layer (2) The composition of the energy ray-curable adhesive resin (1-2a) into which a group is introduced is the adhesive resin (I-1a ), the energy ray-curable compound, and the energy ray-curable adhesive resin (1-2a) in which an unsaturated group is introduced into the side chain of the adhesive resin (I-1a).

In the present embodiment, the embedded layer (2) preferably contains an adhesive resin (1-2a), an adhesive resin (1-1a), and a cross-linking agent. In this case, the adhesive resin (1-1a) is preferably an acrylic polymer having structural units derived from (meth)acrylic acid alkyl esters and units derived from carboxy group-containing monomers. Further, the adhesive resin (1-2a) has an isocyanate group and an energy ray-polymerizable unsaturated group in an acrylic polymer having a structural unit derived from a (meth)acrylic acid alkyl ester and a unit derived from a hydroxyl group-containing monomer. It is preferably an acrylic polymer obtained by reacting an unsaturated group-containing compound. As the cross-linking agent, compounds exemplified in the first pressure-sensitive adhesive composition (I-1) described later can be used, and tolylene diisocyanate is particularly preferably used.

The content of structural units derived from (meth)acrylic acid alkyl ester relative to the total mass of the adhesive resin (1-1a) is preferably 75 to 99% by mass, more preferably 80 to 98% by mass. , 85 to 97% by mass. As another aspect of the present invention, the content of structural units derived from (meth)acrylic acid alkyl ester relative to the total mass of the adhesive resin (1-1a) may be 70 to 95% by mass, or 80 to 95% by mass. It's okay. The content ratio of the constituent units of the carboxy group-containing monomer to the total mass of the adhesive resin (1-1a) is preferably 1.0 to 30% by mass, more preferably 2.0 to 25% by mass. , 3.0 to 20% by mass. As another aspect of the present invention, the content ratio of the structural unit of the carboxy group-containing monomer to the total mass of the adhesive resin (1-1a) may be 3.0 to 20% by mass, and 5.0 to 15% by mass. It's okay. The (meth)acrylic acid alkyl ester in the adhesive resin (1-1a) preferably has an alkyl group with 4 to 12 carbon atoms, more preferably 4 to 8 carbon atoms. In addition, the adhesive resin (1-1a) is preferably alkyl acrylate. Among them, the (meth)acrylic acid alkyl ester is particularly preferably n-butyl acrylate. Examples of the carboxy-containing monomer in the adhesive resin (1-1a) include ethylenically unsaturated monocarboxylic acids, ethylenically unsaturated dicarboxylic acids, and anhydrides of ethylenically unsaturated dicarboxylic acids. Saturated monocarboxylic acids are preferred, (meth)acrylic acid is more preferred, and acrylic acid is particularly preferred.
The weight average molecular weight of the adhesive resin (1-1a) of the present embodiment is preferably 100,000 to 800,000, more preferably 150,000 to 700,000, and more preferably 200,000 to 600. ,000 is more preferred.
In addition, in this specification, the "weight average molecular weight" is a polystyrene conversion value measured by a gel permeation chromatography (GPC) method, unless otherwise specified.

The content of structural units derived from (meth)acrylic acid alkyl ester relative to the total mass of the adhesive resin (1-2a) is preferably 1.0 to 95% by mass, more preferably 2.0 to 90% by mass. is more preferable, and 3.0 to 85% by mass is even more preferable. The content ratio of units derived from a hydroxyl group-containing monomer to the total mass of the adhesive resin (1-2a) is preferably 1.0 to 50% by mass, more preferably 2.0 to 45% by mass, More preferably, it is 3.0 to 40% by mass. The (meth)acrylic acid alkyl ester in the adhesive resin (1-2a) preferably has an alkyl group with 1 to 12 carbon atoms, more preferably 1 to 4 carbon atoms. The adhesive resin (1-2a) preferably has structural units derived from two or more (meth)acrylic acid alkyl esters, and structural units derived from methyl (meth)acrylate and n-butyl (meth)acrylate. It is more preferable to have structural units derived from methyl methacrylate and n-butyl acrylate. As the hydroxyl group-containing monomer in the adhesive resin (1-2a), those exemplified in the first adhesive composition (I-1) described later can be used, and 2-hydroxyethyl acrylate can be used. is particularly preferred. As the unsaturated group-containing compound having an isocyanate group and an energy ray-polymerizable unsaturated group, compounds exemplified in the first pressure-sensitive adhesive composition (I-2) described later can be used, and 2-methacryloyloxyethyl Particular preference is given to using isocyanates. The amount of the unsaturated group-containing compound having the isocyanate group and the energy beam-polymerizable unsaturated group is preferably 10 to 150 mol, more preferably 20 to 140 mol, when the total hydroxyl groups derived from the hydroxyl group-containing monomer are 100 mol. Preferably, 30 to 130 mol is more preferable.
The weight average molecular weight of the adhesive resin (1-2a) of the present embodiment is preferably 10,000 to 500,000, more preferably 20,000 to 400,000, and more preferably 30,000 to 300. ,000 is more preferred.

O Adhesive Layer Hereinafter, the adhesive layer constituting the viscoelastic layer may be referred to as a "first adhesive layer" to distinguish it from a second adhesive layer for bonding to a support, which will be described later.
The first adhesive layer is sheet-like or film-like and contains an adhesive.
Examples of the adhesive include acrylic resin (adhesive made of a resin having a (meth)acryloyl group), urethane resin (adhesive made of a resin having a urethane bond), rubber resin (a resin having a rubber structure adhesive), silicone resin (adhesive made of a resin having a siloxane bond), epoxy resin (adhesive made of a resin having an epoxy group), polyvinyl ether, adhesive resins such as polycarbonate, acrylic based resins are preferred.

In the present invention, the term "adhesive resin" is a concept that includes both a resin having adhesiveness and a resin having adhesiveness. Also included are resins that exhibit adhesiveness when used in combination with other components such as additives, and resins that exhibit adhesiveness due to the presence of a trigger such as heat or water.

The first pressure-sensitive adhesive layer may be only one layer (single layer), or may be a plurality of layers of two or more layers. The combination is not particularly limited.

The thickness of the first pressure-sensitive adhesive layer is preferably 1-1000 μm, more preferably 2-100 μm, particularly preferably 8-20 μm.
Here, the "thickness of the first pressure-sensitive adhesive layer" means the thickness of the entire first pressure-sensitive adhesive layer. means the total thickness of all the layers that make up the

The first adhesive layer may be formed using an energy ray-curable adhesive, or may be formed using a non-energy ray-curable adhesive. The physical properties of the first pressure-sensitive adhesive layer formed using an energy ray-curable pressure-sensitive adhesive can be easily adjusted before and after curing.
In the present invention, the term "energy ray" means an electromagnetic wave or a charged particle beam that has an energy quantum, and examples thereof include ultraviolet rays, electron beams, and the like.
Ultraviolet rays can be applied by using, for example, a high-pressure mercury lamp, a fusion H lamp, a xenon lamp, or the like as an ultraviolet light source. The electron beam can be generated by an electron beam accelerator or the like.
In the present invention, "energy ray-curing" means the property of curing by irradiation with energy rays, and "non-energy ray-curing" means the property of not curing even when irradiated with energy rays. .

{{first adhesive composition}}
A 1st adhesive layer can be formed using the 1st adhesive composition containing an adhesive. For example, the first pressure-sensitive adhesive layer can be formed on the target site by applying the first pressure-sensitive adhesive composition to the surface to be formed of the first pressure-sensitive adhesive layer and drying it as necessary. Further, by applying the first pressure-sensitive adhesive composition to the release film and drying it as necessary, the first pressure-sensitive adhesive layer having the desired thickness can be formed, and the first pressure-sensitive adhesive layer can be formed on the desired site. can also be transcribed. A more specific method for forming the first pressure-sensitive adhesive layer will be described later in detail together with methods for forming other layers. The content ratio of the components that do not vaporize at room temperature in the first pressure-sensitive adhesive composition is usually the same as the content ratio of the components in the first pressure-sensitive adhesive layer. In the present embodiment, "ordinary temperature" means a temperature that is not particularly cooled or heated, that is, a normal temperature, and includes, for example, a temperature of 15 to 25°C.

Coating of the first pressure-sensitive adhesive composition may be performed by a known method, for example, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, A method using various coaters such as a screen coater, a Meyer bar coater, and a kiss coater can be used.

Drying conditions for the first pressure-sensitive adhesive composition are not particularly limited, but when the first pressure-sensitive adhesive composition contains a solvent to be described later, it is preferably dried by heating. It is preferable to dry under the conditions of 10 seconds to 5 minutes.

When the first pressure-sensitive adhesive layer is energy-ray-curable, the first pressure-sensitive adhesive composition containing the energy-ray-curable pressure-sensitive adhesive, i.e., the energy-ray-curable first pressure-sensitive adhesive composition, for example, non-energy A first adhesive composition containing a radiation-curable adhesive resin (I-1a) (hereinafter sometimes abbreviated as "adhesive resin (I-1a)") and an energy ray-curable compound. (I-1); Energy ray-curable adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of non-energy ray-curable adhesive resin (I-1a) (hereinafter referred to as “adhesive a first adhesive composition (I-2) containing a resin (I-2a)"; the adhesive resin (I-2a) and an energy ray-curable low molecular weight compound The first pressure-sensitive adhesive composition (I-3) containing, etc. can be mentioned.

{First adhesive composition (I-1)}
As described above, the first adhesive composition (I-1) contains a non-energy ray-curable adhesive resin (I-1a) and an energy ray-curable compound.

(Adhesive resin (I-1a))
The adhesive resin (I-1a) is preferably an acrylic resin.
Examples of the acrylic resin include an acrylic polymer having at least a structural unit derived from a (meth)acrylic acid alkyl ester.
The structural units of the acrylic resin may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.

Examples of the (meth)acrylic acid alkyl ester include those in which the alkyl group constituting the alkyl ester has 1 to 20 carbon atoms, and the alkyl group is linear or branched. is preferred.
(Meth)acrylic acid alkyl esters, more specifically, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, (meth)acrylic acid n-butyl, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, n-octyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, (meth) ) undecyl acrylate, dodecyl (meth)acrylate (also referred to as lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (also referred to as myristyl (meth)acrylate), (meth) ) Pentadecyl acrylate, hexadecyl (meth) acrylate (also referred to as palmityl (meth) acrylate), heptadecyl (meth) acrylate, octadecyl (meth) acrylate (also referred to as stearyl (meth) acrylate), (meth) ) nonadecyl acrylate, icosyl (meth)acrylate and the like.

From the viewpoint of improving the adhesive strength of the first pressure-sensitive adhesive layer, the acrylic polymer preferably has a structural unit derived from a (meth)acrylic acid alkyl ester in which the alkyl group has 4 or more carbon atoms. The number of carbon atoms in the alkyl group is preferably 4 to 12, more preferably 4 to 8, from the viewpoint of further improving the adhesive strength of the first pressure-sensitive adhesive layer. In addition, the (meth)acrylic acid alkyl ester in which the alkyl group has 4 or more carbon atoms is preferably an acrylic acid alkyl ester.

It is preferable that the acrylic polymer further has a structural unit derived from a functional group-containing monomer in addition to the structural unit derived from the (meth)acrylic acid alkyl ester.
As the functional group-containing monomer, for example, the functional group reacts with a cross-linking agent described later to become a starting point for crosslinking, or the functional group reacts with an unsaturated group in an unsaturated group-containing compound, Examples thereof include those capable of introducing unsaturated groups into side chains of acrylic polymers.

Examples of the functional group in the functional group-containing monomer include hydroxyl group, carboxyl group, amino group, epoxy group and the like.
That is, examples of functional group-containing monomers include hydroxyl group-containing monomers, carboxy group-containing monomers, amino group-containing monomers, and epoxy group-containing monomers.

Examples of the hydroxyl group-containing monomer include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, (meth) Hydroxyalkyl (meth)acrylates such as 2-hydroxybutyl acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; Saturated alcohol (that is, unsaturated alcohol having no (meth)acryloyl skeleton) and the like can be mentioned.

Examples of the carboxy group-containing monomer include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having an ethylenically unsaturated bond) such as (meth)acrylic acid and crotonic acid; fumaric acid, itaconic acid, maleic acid, citracone; ethylenically unsaturated dicarboxylic acids (dicarboxylic acids having an ethylenically unsaturated bond) such as acids; anhydrides of the ethylenically unsaturated dicarboxylic acids; (meth)acrylic acid carboxyalkyl esters such as 2-carboxyethyl methacrylate; be done.

The functional group-containing monomer is preferably a hydroxyl group-containing monomer or a carboxy group-containing monomer, more preferably a hydroxyl group-containing monomer.

The functional group-containing monomers constituting the acrylic polymer may be of one type or two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.

In the acrylic polymer, the content of structural units derived from functional group-containing monomers is preferably 1 to 35% by mass, more preferably 3 to 32% by mass, based on the total amount of structural units. , 5 to 30% by mass.

The acrylic polymer may further have structural units derived from other monomers in addition to structural units derived from (meth)acrylic acid alkyl esters and structural units derived from functional group-containing monomers.
The other monomer is not particularly limited as long as it is copolymerizable with (meth)acrylic acid alkyl ester or the like.
Examples of the other monomers include styrene, α-methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile and acrylamide.

The other monomers constituting the acrylic polymer may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.

The acrylic polymer can be used as the above non-energy ray-curable adhesive resin (I-1a).
On the other hand, the functional group in the acrylic polymer is reacted with an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group (energy ray-polymerizable group), and the above-mentioned energy ray-curable adhesive It can be used as resin (I-2a).
In the present invention, the term "energy ray polymerizable" means the property of polymerizing when irradiated with an energy ray.

The adhesive resin (I-1a) contained in the first adhesive composition (I-1) may be only one kind, or two or more kinds, and when two or more kinds are used, the combination and ratio thereof are Can be selected arbitrarily.

In the first adhesive composition (I-1), the content of the adhesive resin (I-1a) is 5 to 99% by mass with respect to the total mass of the first adhesive composition (I-1). preferably 10 to 95% by mass, particularly preferably 15 to 90% by mass.

(Energy ray-curable compound)
Examples of the energy ray-curable compound contained in the first pressure-sensitive adhesive composition (I-1) include monomers or oligomers having an energy ray-polymerizable unsaturated group and curable by energy ray irradiation.
Among energy ray-curable compounds, monomers include, for example, trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4 -polyvalent (meth)acrylates such as butylene glycol di(meth)acrylate, 1,6-hexanediol (meth)acrylate; urethane (meth)acrylates; polyester (meth)acrylates; polyether (meth)acrylates; meth)acrylate and the like.

Among the energy ray-curable compounds, oligomers include, for example, oligomers obtained by polymerizing the above-exemplified monomers.
Urethane (meth)acrylates and urethane (meth)acrylate oligomers are preferred as the energy ray-curable compound because they have a relatively large molecular weight and are unlikely to reduce the storage modulus of the first pressure-sensitive adhesive layer.
As used herein, "oligomer" means a substance having a weight average molecular weight or formula weight of 5,000 or less.

The energy ray-curable compound contained in the first pressure-sensitive adhesive composition (I-1) may be of only one type, or may be of two or more types. You can choose.

In the first pressure-sensitive adhesive composition (I-1), the content of the energy ray-curable compound is 1 to 95% by mass with respect to the total weight of the first pressure-sensitive adhesive composition (I-1). is preferred, 5 to 90 mass % is more preferred, and 10 to 85 mass % is particularly preferred.

(crosslinking agent)
As the adhesive resin (I-1a), in addition to the structural unit derived from the (meth)acrylic acid alkyl ester, when using the acrylic polymer having a structural unit derived from a functional group-containing monomer, the first adhesive composition The product (I-1) preferably further contains a cross-linking agent.

The cross-linking agent is, for example, one that reacts with the functional group to cross-link the adhesive resins (I-1a).
Examples of cross-linking agents include tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, isocyanate-based cross-linking agents (cross-linking agents having isocyanate groups) such as adducts of these diisocyanates; N,N'-(cyclohexane-1,3 -diylbismethylene)bis(diglycidylamine), epoxy-based cross-linking agents (cross-linking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridines such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine cross-linking agents (cross-linking agents having an aziridinyl group); metal chelate-based cross-linking agents such as aluminum chelate (cross-linking agents having a metal chelate structure); isocyanurate-based cross-linking agents (cross-linking agents having an isocyanuric acid skeleton).
The cross-linking agent is preferably an isocyanate-based cross-linking agent because it improves the cohesion of the pressure-sensitive adhesive to improve the adhesive strength of the first pressure-sensitive adhesive layer and is easily available.

The first pressure-sensitive adhesive composition (I-1) may contain one type of cross-linking agent, or two or more types thereof.

In the first adhesive composition (I-1), the content of the cross-linking agent is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass of the adhesive resin (I-1a). , more preferably 0.1 to 20 parts by mass, particularly preferably 1 to 10 parts by mass.

(Photoinitiator)
The first pressure-sensitive adhesive composition (I-1) may further contain a photopolymerization initiator. The first pressure-sensitive adhesive composition (I-1) containing a photopolymerization initiator undergoes a sufficient curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone, 2-hydroxy -Acetophenone compounds such as 2-methyl-1-phenyl-propan-1-one and 2,2-dimethoxy-1,2-diphenylethan-1-one; bis(2,4,6-trimethylbenzoyl)phenylphosphine acylphosphine oxide compounds such as oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2-chloroanthraquinone and the like.
As the photopolymerization initiator, for example, a quinone compound such as 1-chloroanthraquinone; a photosensitizer such as an amine;

The photopolymerization initiator contained in the first pressure-sensitive adhesive composition (I-1) may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. .

In the first pressure-sensitive adhesive composition (I-1), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass with respect to 100 parts by mass of the energy ray-curable compound. , more preferably 0.03 to 10 parts by mass, particularly preferably 0.05 to 5 parts by mass.

(Other additives)
The first pressure-sensitive adhesive composition (I-1) may contain other additives that do not fall under any of the above-described components within the range that does not impair the effects of the present invention.
Examples of other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, colorants (pigments, dyes), sensitizers, and tackifiers. , a reaction retardant, a cross-linking accelerator (catalyst), and other known additives.
In addition, the reaction retarder is, for example, the first adhesive composition (I-1) during storage due to the action of a catalyst mixed in the first adhesive composition (I-1). It suppresses the progress of a cross-linking reaction that does not occur. Examples of the reaction retarder include those that form a chelate complex by chelating the catalyst, more specifically those having two or more carbonyl groups (-C(=O)-) in one molecule. mentioned.

The other additives contained in the first pressure-sensitive adhesive composition (I-1) may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. .

In the first pressure-sensitive adhesive composition (I-1), the content of other additives is not particularly limited, and may be appropriately selected according to the type.

(solvent)
The first PSA composition (I-1) may contain a solvent. Since the first pressure-sensitive adhesive composition (I-1) contains a solvent, the coating suitability to the surface to be coated is improved.

The solvent is preferably an organic solvent, and examples of the organic solvent include ketones such as methyl ethyl ketone and acetone; esters (carboxylic acid esters) such as ethyl acetate; ethers such as tetrahydrofuran and dioxane; cyclohexane, n-hexane, and the like. aromatic hydrocarbons such as toluene and xylene; alcohols such as 1-propanol and 2-propanol.

As the solvent, for example, the solvent used in the production of the adhesive resin (I-1a) is used as it is in the first adhesive composition (I-1) without removing it from the adhesive resin (I-1a). Alternatively, a solvent of the same or different type as that used in the production of the adhesive resin (I-1a) may be added separately in the production of the first adhesive composition (I-1).

The solvents contained in the first pressure-sensitive adhesive composition (I-1) may be of one type or two or more types, and when two or more types are used, their combination and ratio can be arbitrarily selected.

The content of the solvent in the first pressure-sensitive adhesive composition (I-1) is not particularly limited, and may be adjusted as appropriate.

{First adhesive composition (I-2)}
As described above, the first pressure-sensitive adhesive composition (I-2) is an energy-ray-curable pressure-sensitive adhesive resin (I-1a) in which an unsaturated group is introduced into the side chain of the non-energy-ray-curable pressure-sensitive adhesive resin (I-1a). Contains resin (I-2a).

(Adhesive resin (I-2a))
The adhesive resin (I-2a) is obtained, for example, by reacting a functional group in the adhesive resin (I-1a) with an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group.

The unsaturated group-containing compound is capable of bonding with the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a) in addition to the energy ray-polymerizable unsaturated group. It is a compound having a group.
Examples of the energy ray-polymerizable unsaturated group include a (meth)acryloyl group, a vinyl group (also referred to as an ethenyl group), an allyl group (also referred to as a 2-propenyl group), and the like, and a (meth)acryloyl group. is preferred.
Groups capable of bonding with functional groups in the adhesive resin (I-1a) include, for example, an isocyanate group and a glycidyl group capable of bonding with a hydroxyl group or an amino group, and a hydroxyl group and an amino group capable of bonding with a carboxy group or an epoxy group. etc.

Examples of the unsaturated group-containing compound include (meth) acryloyloxyethyl isocyanate, (meth) acryloyl isocyanate, glycidyl (meth) acrylate and the like, and (meth) acryloyloxyethyl isocyanate is preferred, among which 2-methacryloyl Oxyethyl isocyanate is particularly preferred.
The isocyanate compound can bond with the hydroxyl groups in the adhesive resin (I-1a), and the amount of the isocyanate compound used is 10 when the total hydroxyl groups in the adhesive resin (I-1a) are 100 mol. ~150 mol is preferred, 20 to 140 mol is more preferred, and 30 to 130 mol is even more preferred.

The adhesive resin (I-2a) contained in the first adhesive composition (I-2) may be only one kind or two or more kinds. Can be selected arbitrarily.

In the first adhesive composition (I-2), the content of the adhesive resin (I-2a) is 5 to 99% by mass relative to the total mass of the first adhesive composition (I-2). preferably 10 to 95% by mass, particularly preferably 10 to 90% by mass.

(crosslinking agent)
As the adhesive resin (I-2a), for example, when using the acrylic polymer having the same structural unit derived from a functional group-containing monomer as in the adhesive resin (I-1a), the first adhesive composition The product (I-2) may further contain a cross-linking agent.

Examples of the cross-linking agent in the first pressure-sensitive adhesive composition (I-2) include the same cross-linking agents as in the first pressure-sensitive adhesive composition (I-1).
The first pressure-sensitive adhesive composition (I-2) may contain only one type of cross-linking agent, or two or more types thereof.

In the first adhesive composition (I-2), the content of the cross-linking agent is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass of the adhesive resin (I-2a). , more preferably 0.1 to 20 parts by mass, particularly preferably 1 to 10 parts by mass.

(Photoinitiator)
The first pressure-sensitive adhesive composition (I-2) may further contain a photopolymerization initiator. The first pressure-sensitive adhesive composition (I-2) containing a photopolymerization initiator undergoes a sufficient curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the photopolymerization initiator in the first pressure-sensitive adhesive composition (I-2) include the same photopolymerization initiators as in the first pressure-sensitive adhesive composition (I-1).
The photopolymerization initiator contained in the first pressure-sensitive adhesive composition (I-2) may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. .

In the first adhesive composition (I-2), the content of the photopolymerization initiator is 0.01 to 20 parts by mass with respect to 100 parts by mass of the adhesive resin (I-2a). is preferred, 0.03 to 10 parts by weight is more preferred, and 0.05 to 5 parts by weight is particularly preferred.

(Other additives)
The first pressure-sensitive adhesive composition (I-2) may contain other additives that do not fall under any of the above-described components within the range that does not impair the effects of the present invention.
Examples of the other additives in the first pressure-sensitive adhesive composition (I-2) include the same additives as the other additives in the first pressure-sensitive adhesive composition (I-1).
The other additives contained in the first pressure-sensitive adhesive composition (I-2) may be of one type or two or more types, and when there are two or more types, their combination and ratio can be arbitrarily selected. .

The content of other additives in the first pressure-sensitive adhesive composition (I-2) is not particularly limited, and may be appropriately selected according to the type.

(solvent)
The first PSA composition (I-2) may contain a solvent for the same purpose as the first PSA composition (I-1).
Examples of the solvent in the first pressure-sensitive adhesive composition (I-2) include the same solvents as in the first pressure-sensitive adhesive composition (I-1).
The solvents contained in the first pressure-sensitive adhesive composition (I-2) may be of one type or two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.
The content of the solvent in the first pressure-sensitive adhesive composition (I-2) is not particularly limited, and may be adjusted as appropriate.

{First adhesive composition (I-3)}
The first adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy ray-curable low-molecular-weight compound, as described above.

In the first adhesive composition (I-3), the content of the adhesive resin (I-2a) is 5 to 99% by mass relative to the total mass of the first adhesive composition (I-3). preferably 10 to 95% by mass, particularly preferably 15 to 90% by mass.

(Energy ray-curable low-molecular compound)
Examples of the energy ray-curable low-molecular compound contained in the first pressure-sensitive adhesive composition (I-3) include monomers and oligomers having energy ray-polymerizable unsaturated groups and curable by energy ray irradiation. , the same energy ray-curable compound contained in the first pressure-sensitive adhesive composition (I-1).
The energy ray-curable low-molecular-weight compound contained in the first pressure-sensitive adhesive composition (I-3) may be of only one type, or may be of two or more types. Can be selected arbitrarily.

In the first adhesive composition (I-3), the content of the energy ray-curable low-molecular-weight compound is 0.01 to 300 parts by mass with respect to 100 parts by mass of the adhesive resin (I-2a). parts, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass.

(Photoinitiator)
The first pressure-sensitive adhesive composition (I-3) may further contain a photopolymerization initiator. The first pressure-sensitive adhesive composition (I-3) containing a photopolymerization initiator undergoes a sufficient curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the photopolymerization initiator in the first pressure-sensitive adhesive composition (I-3) include the same photopolymerization initiators as in the first pressure-sensitive adhesive composition (I-1).
The photopolymerization initiator contained in the first pressure-sensitive adhesive composition (I-3) may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. .

In the first adhesive composition (I-3), the content of the photopolymerization initiator is, relative to the total content of 100 parts by mass of the adhesive resin (I-2a) and the energy ray-curable low-molecular-weight compound, It is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.

(Other additives)
The first pressure-sensitive adhesive composition (I-3) may contain other additives that do not fall under any of the above components within the range that does not impair the effects of the present invention.
Examples of the other additives include the same as the other additives in the first pressure-sensitive adhesive composition (I-1).
The other additives contained in the first pressure-sensitive adhesive composition (I-3) may be of one type or two or more types, and when there are two or more types, their combination and ratio can be arbitrarily selected. .

In the first pressure-sensitive adhesive composition (I-3), the content of other additives is not particularly limited, and may be appropriately selected according to the type.

(solvent)
The first PSA composition (I-3) may contain a solvent for the same purpose as the first PSA composition (I-1).
Examples of the solvent in the first pressure-sensitive adhesive composition (I-3) include the same solvents as in the first pressure-sensitive adhesive composition (I-1).
The solvents contained in the first pressure-sensitive adhesive composition (I-3) may be of one type or two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.
The content of the solvent in the first pressure-sensitive adhesive composition (I-3) is not particularly limited, and may be adjusted as appropriate.

{First PSA compositions other than first PSA compositions (I-1) to (I-3)}
So far, the first PSA composition (I-1), the first PSA composition (I-2) and the first PSA composition (I-3) have been mainly described, but these components What was described as a general first pressure-sensitive adhesive composition other than these three first pressure-sensitive adhesive compositions (in the present embodiment, "first pressure-sensitive adhesive compositions (I-1) to (I- It can also be used in the same way in the case of "first pressure-sensitive adhesive composition other than 3)".

As the first pressure-sensitive adhesive composition other than the first pressure-sensitive adhesive compositions (I-1) to (I-3), in addition to the energy ray-curable first pressure-sensitive adhesive composition, a non-energy ray-curable first pressure-sensitive adhesive composition Adhesive compositions are also included.
Examples of the non-energy ray-curable first pressure-sensitive adhesive composition include acrylic resins (resins having a (meth)acryloyl group), urethane resins (resins having a urethane bond), rubber resins (having a rubber structure resin), silicone resin (resin having a siloxane bond), epoxy resin (resin having an epoxy group), polyvinyl ether, or adhesive resin such as polycarbonate, and those containing acrylic resin is preferred.

The first pressure-sensitive adhesive compositions other than the first pressure-sensitive adhesive compositions (I-1) to (I-3) preferably contain one or more cross-linking agents, and the content thereof is as described above. It can be the same as in the case of the first pressure-sensitive adhesive composition (I-1) and the like.

<Method for producing the first pressure-sensitive adhesive composition>
The first pressure-sensitive adhesive compositions such as the first pressure-sensitive adhesive compositions (I-1) to (I-3) include the pressure-sensitive adhesive and, if necessary, components other than the pressure-sensitive adhesive. It is obtained by blending each component for constituting the composition.
There are no particular restrictions on the order of addition of each component when blending, and two or more components may be added at the same time.
When a solvent is used, the solvent may be mixed with any compounding component other than the solvent and used by diluting this compounding component in advance, or any compounding component other than the solvent may be diluted in advance. You may use by mixing a solvent with these compounding ingredients, without preserving.
The method of mixing each component at the time of blending is not particularly limited, and may be selected from known methods such as a method of mixing by rotating a stirrer or stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves. It can be selected as appropriate.
The temperature and time at which each component is added and mixed are not particularly limited as long as each compounded component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30°C.

{Composition of first adhesive layer}
The composition of the first pressure-sensitive adhesive layer in the present embodiment is obtained by removing the solvent from the above-described first pressure-sensitive adhesive layer composition.
Total weight of the first pressure-sensitive adhesive layer (I-1) in the first pressure-sensitive adhesive layer (I-1) when the first pressure-sensitive adhesive layer composition is the first pressure-sensitive adhesive composition (I-1) The content of the adhesive resin (I-1a) is preferably 50 to 99% by mass, more preferably 55 to 95% by mass, even more preferably 60 to 90% by mass. Further, as another aspect of the present invention, the content of the adhesive resin (I-1a) with respect to the total mass of the first adhesive layer (I-1) may be 25 to 80% by mass, or 30 It may be up to 75% by mass, or 35 to 70% by mass. In addition, the content of the energy ray-curable compound with respect to the total mass of the first pressure-sensitive adhesive layer (I-1) is preferably 1 to 50% by mass, more preferably 2 to 48% by mass. More preferably, it is up to 45% by mass. When the first pressure-sensitive adhesive layer (I-1) contains a cross-linking agent, the content of the cross-linking agent with respect to the total weight of the first pressure-sensitive adhesive layer (I-1) is preferably 0.1 to 10% by mass. , more preferably 0.2 to 9% by mass, more preferably 0.3 to 8% by mass.

Total weight of the first pressure-sensitive adhesive layer (I-2) in the first pressure-sensitive adhesive layer (I-2) when the first pressure-sensitive adhesive layer composition is the first pressure-sensitive adhesive composition (I-2) The content of the adhesive resin (I-2a) is preferably 50 to 99% by mass, more preferably 60 to 98% by mass, even more preferably 70 to 97% by mass. When the first pressure-sensitive adhesive layer (I-2) contains a cross-linking agent, the content of the cross-linking agent with respect to the total weight of the first pressure-sensitive adhesive layer (I-2) is 0.1 to 10% by mass. It is preferably from 0.2 to 9% by mass, and even more preferably from 0.3 to 8% by mass.

Total weight of the first adhesive layer (I-3) in the first adhesive layer (I-3) when the first adhesive layer composition is the first adhesive composition (I-3) The content of the adhesive resin (I-2a) is preferably 50 to 99% by mass, more preferably 55 to 95% by mass, even more preferably 60 to 90% by mass. Also, the content of the energy ray-curable low-molecular-weight compound with respect to the total mass of the first pressure-sensitive adhesive layer (I-3) is preferably 1 to 50% by mass, more preferably 2 to 48% by mass. , more preferably 5 to 45% by mass. When the first pressure-sensitive adhesive layer (I-3) contains a cross-linking agent, the content of the cross-linking agent with respect to the total weight of the first pressure-sensitive adhesive layer (I-3) is preferably 0.1 to 10% by mass. , more preferably 0.2 to 9% by mass, more preferably 0.3 to 8% by mass.

In the present embodiment, it is preferably the first adhesive layer (I-2) containing the adhesive resin (1-2a) and the cross-linking agent. In this case, the adhesive resin (1-2a) is an acrylic polymer having a structural unit derived from a (meth)acrylic acid alkyl ester and a unit derived from a hydroxyl group-containing monomer, and an isocyanate group and an energy ray-polymerizable unsaturated group. It is preferably an acrylic polymer obtained by reacting an unsaturated group-containing compound possessed. As the cross-linking agent, the compounds exemplified in the first pressure-sensitive adhesive composition (I-1) can be used, and it is particularly preferable to use tolylene diisocyanate.

The content of structural units derived from (meth)acrylic acid alkyl ester relative to the total mass of the adhesive resin (1-2a) is preferably 50 to 99% by mass, more preferably 60 to 98% by mass. , 70 to 97% by mass. The content ratio of units derived from a hydroxyl group-containing monomer to the total mass of the adhesive resin (1-2a) is preferably 0.5 to 15% by mass, more preferably 1.0 to 10% by mass, It is more preferably 2.0 to 10% by mass. The (meth)acrylic acid alkyl ester in the adhesive resin (1-2a) preferably has an alkyl group with 1 to 12 carbon atoms, more preferably 1 to 4 carbon atoms. The adhesive resin (1-2a) preferably has structural units derived from two or more (meth)acrylic acid alkyl esters, and structural units derived from methyl (meth)acrylate and n-butyl (meth)acrylate. It is more preferable to have structural units derived from methyl methacrylate and n-butyl acrylate. As the hydroxyl group-containing monomer in the adhesive resin (1-2a), those exemplified in the first adhesive composition (I-1) can be used, and 2-hydroxyethyl acrylate can be used. is particularly preferred. As the unsaturated group-containing compound having an isocyanate group and an energy ray-polymerizable unsaturated group, the compounds exemplified in the first pressure-sensitive adhesive composition (I-2) can be used, and 2-methacryloyloxyethyl isocyanate is used. is particularly preferred. The amount of the unsaturated group-containing compound having the isocyanate group and the energy beam-polymerizable unsaturated group is preferably 20 to 80 mol, more preferably 25 to 75 mol, when the total hydroxyl groups derived from the hydroxyl group-containing monomer are 100 mol. Preferably, 30 to 70 mol is more preferable.

◎ Base material The base material is in the form of a sheet or a film, and examples of constituent materials thereof include various resins.
Examples of the resin include polyethylene such as low-density polyethylene (also referred to as LDPE), linear low-density polyethylene (also referred to as LLDPE), and high-density polyethylene (also referred to as HDPE); polypropylene, polybutene, polybutadiene, and polymethyl Polyolefins other than polyethylene such as pentene and norbornene resins; ethylene-vinyl acetate copolymer (also called EVA), ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, Ethylene-based copolymers such as norbornene copolymers (that is, copolymers obtained using ethylene as a monomer); vinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymers (that is, vinyl chloride as a monomer Polystyrene; polycycloolefin; polyethylene terephthalate (also called PET), polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalene dicarboxylate, all configurations Polyesters such as wholly aromatic polyesters whose units have an aromatic cyclic group; Copolymers of two or more of the above polyesters; Poly(meth)acrylic acid esters; Polyurethanes; Polyurethane acrylates; Polyimides; polyacetal; modified polyphenylene oxide; polyphenylene sulfide; polysulfone;
Examples of the resin include polymer alloys such as mixtures of the polyester and other resins. The polymer alloy of the polyester and the resin other than polyester is preferably one in which the amount of the resin other than the polyester is relatively small.
Further, as the resin, for example, a crosslinked resin in which one or more of the resins exemplified above are crosslinked; Also included are resins.

In this specification, "(meth)acrylic acid" is a concept that includes both "acrylic acid" and "methacrylic acid". The same applies to terms similar to (meth) acrylic acid, for example, "(meth) acrylate" is a concept that includes both "acrylate" and "methacrylate", and "(meth) acryloyl group" is a concept that includes both "acryloyl group" and "methacryloyl group".

The resin constituting the substrate may be of one type or two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.

The substrate may have only one layer (single layer), or may have a plurality of layers including two or more layers. Not limited.

The thickness of the substrate is preferably 5 to 1000 μm, more preferably 10 to 500 μm, even more preferably 15 to 300 μm, particularly preferably 20 to 150 μm.
Here, the "thickness of the base material" means the thickness of the entire base material. means.

It is preferable that the base material has a high thickness accuracy, that is, a material in which variations in thickness are suppressed irrespective of parts. Among the constituent materials described above, examples of materials that can be used to form a base material with high thickness accuracy include polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, and ethylene-vinyl acetate copolymer ( EVA) and the like.

The substrate contains various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc., in addition to the main constituent materials such as the resins. may

The substrate may be transparent or opaque, colored according to purpose, or may be deposited with other layers.
When the viscoelastic layer is energy ray-curable, the substrate preferably transmits energy rays.

A base material can be manufactured by a well-known method. For example, a substrate containing a resin can be produced by molding a resin composition containing the resin.

◎Release Film The release film may be one known in the art.
Preferred release films include, for example, a film made of a resin such as polyethylene terephthalate and the like, at least one surface of which is release-treated by silicone treatment or the like; and the like.
The thickness of the release film is preferably the same as the thickness of the substrate.

⊚Second Adhesive Layer The second adhesive layer (ie, lamination adhesive layer) is an adhesive layer for laminating the terminal protection tape of the present embodiment to a support.
The second pressure-sensitive adhesive layer may be one known in the art, and can be appropriately selected from those described for the first pressure-sensitive adhesive layer according to the support.
The second pressure-sensitive adhesive composition for forming the second pressure-sensitive adhesive layer is the same as the first pressure-sensitive adhesive composition, and the method for producing the second pressure-sensitive adhesive composition is also the same as the first pressure-sensitive adhesive composition. Similar to the method.

<Method for Producing Terminal Protection Tape> The terminal protection tape can be produced by successively laminating the layers described above so as to have corresponding positional relationships. The method for forming each layer is as described above.

For example, the embedding layer is laminated by coating the embedding layer forming composition on the release-treated surface of the release film and drying it as necessary. The first pressure-sensitive adhesive layer is laminated by coating the above-described first pressure-sensitive adhesive composition on the release-treated surface of another release film and drying it as necessary. By bonding the embedding layer on the release film to the first adhesive layer on another release film, a terminal protection tape in which the release film, the embedding layer, the first adhesive layer, and the release film are laminated in this order is produced. obtain. The release film may be removed when the terminal protection tape is used.

A terminal protection tape in which an embedding layer and a first pressure-sensitive adhesive layer are laminated in this order on a base material in the thickness direction can be produced by the following method.
For example, by peeling off the release film on the embedding layer side of the terminal protection tape in which the release film, the embedding layer, the first adhesive layer, and the release film are laminated in this order, and bonding this to the substrate. , the embedding layer, the first pressure-sensitive adhesive layer and the release film are laminated in this order on the base material to obtain a terminal protection tape. The release film may be removed when the terminal protection tape is used.

Alternatively, for example, the embedding layer is laminated on the substrate by extruding the embedding layer forming composition onto the substrate. The first pressure-sensitive adhesive layer is laminated by applying the above-described first pressure-sensitive adhesive composition onto the release-treated surface of the release film and drying it as necessary. The terminal protection tape in which the embedding layer, the first adhesive layer and the release film are laminated in this order on the substrate can also be obtained by laminating the first adhesive layer on the release film to the embedding layer on the substrate. can be obtained. The release film may be removed when the terminal protection tape is used.

Moreover, the terminal protection tape in the form of a double-sided tape in which the second pressure-sensitive adhesive layer, the base material, the embedding layer and the first pressure-sensitive adhesive layer are laminated in this order in the thickness direction can be produced by the method shown below. .
For example, the above terminal protection tape is prepared in which the embedding layer, the first pressure-sensitive adhesive layer and the release film are laminated in this order on the substrate. The second pressure-sensitive adhesive layer is laminated by applying the above-described second pressure-sensitive adhesive composition onto the release-treated surface of another release film and drying it as necessary. Then, by bonding the second adhesive layer on the release film to the base material of the terminal protection tape, the release film, the second adhesive layer, the base material, the embedding layer, the first adhesive layer and the release film are obtained. are laminated in this order to obtain a terminal protection tape. The release film may be removed when the terminal protection tape is used.

A terminal protection tape having layers other than the above-described layers is obtained by performing the steps of forming and laminating the other layers in the above-described manufacturing method so that the lamination positions of the other layers are appropriate. It can be produced by adding either one or both as appropriate.

<Method for Manufacturing Semiconductor Device with Electromagnetic Shield Film> The terminal protection tape of the present embodiment can be used, for example, in the following method for manufacturing a semiconductor device with an electromagnetic wave shield film.
FIG. 5 shows a method for manufacturing a semiconductor device with an electromagnetic wave shielding film according to the present embodiment, in which a terminal protection tape 3 having an adhesive layer 14, an embedding layer 13, and a base material 11 in this order is shown in FIG. 4 is a cross-sectional view schematically showing one embodiment of a method of manufacturing a semiconductor device with an electromagnetic wave shielding film, which is performed by fixing to a support 30 as shown in FIG.

First, as shown in FIGS. 5A and 5B, the semiconductor device 65 with terminals is placed on the viscoelastic layer 12 of the terminal protection tape with the terminal 91 side, that is, the terminal forming surface 63a of the circuit board 63 facing downward. The terminal 91 is embedded in the viscoelastic layer 12 by pressing the terminal 91 into the viscoelastic layer 12 .
At this time, the viscoelastic layer 12 is brought into contact with the terminals 91 of the semiconductor device 65 with terminals, and the semiconductor device 65 with terminals is pressed against the terminal protection tape. As a result, the outermost surface of the viscoelastic layer 12 on the side of the adhesive layer 14 is pressed against the surface of the terminal 91 and the terminal forming surface 63 a of the circuit board 63 in order. At this time, by heating the viscoelastic layer 12, the viscoelastic layer 12 is softened, spreads between the terminals 91 so as to cover the terminals 91, adheres to the terminal forming surface 63a, and the surfaces of the terminals 91, particularly the terminals, are softened. The terminal 91 is buried by covering the surface of the portion near the forming surface 63a.

As a method for crimping the terminal-equipped semiconductor device 65 to the terminal protection tape, a known method of crimping and attaching various sheets to an object can be applied, and examples thereof include a method using a lamination roller or a vacuum laminator.

The pressure when the terminal-equipped semiconductor device 65 is pressure-bonded to the terminal protection tape is not particularly limited, but is preferably 0.1 to 1.5 MPa, more preferably 0.3 to 1.3 MPa. . The heating temperature is preferably 30 to 70°C, more preferably 35 to 65°C, and particularly preferably 40 to 60°C. Moreover, it is preferable to bond the first adhesive layer 14 of the viscoelastic layer 12 to the terminal forming surface 63a.

A conductive resin 101 is applied to the exposed surface of the semiconductor device 65 with terminals (FIG. 5(c)), and further thermally cured to form an electromagnetic wave shielding film 10 made of a conductive material (FIG. 5(d)). . As a method of forming the electromagnetic wave shielding film 10 by coating with a conductive material, methods such as sputtering, ion plating, and spray coating can be used.

In the terminal protection tape, since the relaxation elastic modulus variation value X2 of the viscoelastic layer 12 is within the range of the predetermined value represented by the formula (2), the terminals of the terminal-equipped semiconductor device are embedded in the viscoelastic layer 12. Even terminal electrodes that have irregularities such as solder balls and are likely to float when being soldered can be embedded without floating, and the terminal forming surface 63 a of the circuit board 63 can be placed on the viscoelastic layer 12 . can be adhered. Furthermore, since the terminal is held buried, it is possible to prevent an electrical short between the terminal 91, which is a terminal electrode, and the electromagnetic wave shielding film 10, and it is necessary to provide a complicated masking part in the process. Nor.

By picking up the semiconductor device 66 with the electromagnetic shielding film from the terminal protection tape 3 having the viscoelastic layer 12, the semiconductor device 65 with the terminal covered with the electromagnetic shielding film 10 can be taken out (FIG. 5E). ).

In the method for manufacturing a semiconductor device with an electromagnetic wave shielding film shown in FIG. 5, the semiconductor device 65 with terminals to be electromagnetically shielded may be an individually manufactured semiconductor device 65 with terminals, which is singulated by a dicing method. It may be a semiconductor device 65 with a terminal.

In the method of manufacturing a semiconductor device with an electromagnetic wave shielding film shown in FIG. , a method for electromagnetic wave shielding has been shown, but the terminal protecting tape 2 is used to electromagnetically shield the semiconductor device 65 with terminals from the semiconductor device assembly 6 with terminals before singulation as follows. can also

FIG. 6 shows a method of manufacturing a semiconductor device with an electromagnetic wave shielding film according to the present embodiment, using a terminal protection tape 2 having an adhesive layer 14, an embedding layer 13, and a base material 11 in this order. 4 is a cross-sectional view schematically showing another embodiment of a method for shielding a semiconductor device 65 with terminals from electromagnetic waves; FIG.

First, as shown in FIGS. 6A and 6B, the terminal-equipped semiconductor device assembly 6 connected by the circuit board 63 is placed on the viscoelastic layer 12 of the terminal protection tape on the side of the terminal 91, that is, the circuit. The terminal formation surface 63a of the substrate 63 is pressed downward to embed the terminals 91 in the viscoelastic layer 12 in the same manner as in FIGS. 5(a) and 5(b).

At this time, the terminals 91 are embedded in the viscoelastic layer 12 of the terminal protection tape while applying pressure to the terminal-equipped semiconductor device assembly 6 from above as in the case of FIGS. .

Further, by bonding the viscoelastic layer 12 while heating it, the viscoelastic layer 12 is softened, and the viscoelastic layer 12 can be brought into close contact with the terminal formation surface 63 a of the circuit board 63 . The pressure when the terminal-equipped semiconductor device assembly 6 is pressure-bonded to the terminal protection tape is not particularly limited, but is preferably 0.1 to 1.5 MPa, more preferably 0.3 to 1.3 MPa. more preferred. The heating temperature is preferably 30 to 70°C, more preferably 35 to 65°C, and particularly preferably 40 to 60°C. Moreover, it is preferable to bond the first adhesive layer 14 of the viscoelastic layer 12 to the terminal forming surface 63a.

Next, the semiconductor device assembly 6 with terminals is diced to obtain semiconductor devices 65 with terminals (FIG. 6(c)). The terminal protection tape of the present embodiment used in the step of forming the electromagnetic shielding film also serves as the dicing tape for the semiconductor device assembly 6 with terminals. In the method of manufacturing a semiconductor device with an electromagnetic wave shielding film shown in FIG. It is necessary to pick up the upper terminal-equipped semiconductor device and replace it with terminal protection tape (FIG. 5(a)). On the other hand, in the method of manufacturing a semiconductor device with an electromagnetic wave shielding film shown in FIG. 6, it is possible to omit the work of replacing the semiconductor device 65 with terminals on the dicing tape with the terminal protection tape.

A conductive resin 101 is applied to the exposed surface of the semiconductor device 65 with terminals (FIG. 6(d)). At this time, if the separation of the conductive resin 101 is insufficient at the boundaries of the semiconductor devices 65 with terminals of the semiconductor device assembly 6 with terminals, the terminal protection tape may be stretched using an expanding device or the like. good. In a state in which the conductive resin 101 is applied to each side surface of the separated semiconductor devices 65 with terminals, the individual semiconductor devices 65 with terminals can be singulated. Furthermore, the conductive resin 101 applied to the top surface and the side surface of the individualized semiconductor device 65 with terminals is heated and cured to form an electromagnetic wave shielding film 10 made of a conductive material on the exposed surface of the semiconductor device 65 with terminals. is formed (FIG. 6(e)). The electromagnetic wave shielding film 10 may be formed by sputtering a conductive material directly on the semiconductor device 65 with terminals (FIG. 6(c)) (FIG. 6(e)).

Since the relaxation elastic modulus fluctuation value X2 of the viscoelastic layer 12 is within the range of the predetermined value shown by the above formula (2), solder Even a terminal electrode, such as a ball, which tends to float, can be buried without floating, and the terminal forming surface 63 a of the circuit board 63 can be brought into close contact with the viscoelastic layer 12 . As a result, it is possible to prevent the terminal 91, which is a terminal electrode, from being electrically short-circuited with the electromagnetic wave shielding film 10, eliminating the need to provide a complicated masking portion or the like in the process.

By picking up the semiconductor device 66 with the electromagnetic wave shielding film from the terminal protection tape having the viscoelastic layer 12, the semiconductor device 65 with terminals coated with the electromagnetic wave shielding film 10 can be taken out (FIG. 6(f)). .

In the terminal protection tape of this embodiment, the height h0 of the terminal 91 is preferably smaller than the thickness d1 of the viscoelastic layer 12, and preferably 1.2≤d1/h0≤5.0. Specifically, it is preferably 50 to 300 μm, more preferably 60 to 270 μm, particularly preferably 80 to 240 μm. Since the height of the terminal 91 is equal to or higher than the lower limit, the function of the terminal 91 can be further improved. In addition, since the height of the terminal 91 is equal to or less than the upper limit, the effect of suppressing the viscoelastic layer 12 remaining on the upper portion of the terminal 91 is further enhanced.
In this specification, the term "height of a terminal" means the height of a portion of the terminal that is located at the highest position from the terminal forming surface. If the terminal-equipped semiconductor device assembly 6 and the terminal-equipped semiconductor device semiconductor device 65 have a plurality of terminals 91, the height h0 of the terminals 91 can be the average thereof. The height of the terminal can be measured by, for example, a non-contact three-dimensional optical interference surface roughness meter (manufactured by Veeco Japan, trade name: Wyko NT1100).

Although the width of the terminal 91 is not particularly limited, it is preferably 170 to 350 μm, more preferably 200 to 320 μm, particularly preferably 230 to 290 μm. Since the width of the terminal 91 is equal to or greater than the lower limit, the function of the terminal 91 can be further improved. In addition, since the height of the terminal 91 is equal to or less than the upper limit, the effect of suppressing the viscoelastic layer 12 remaining on the upper portion of the terminal 91 is further enhanced.
In this specification, the "width of the terminal" is obtained by connecting two different points on the surface of the terminal with a straight line when the terminal is viewed from above in a direction perpendicular to the terminal forming surface. Means the maximum value of a line segment. When the terminal is spherical or hemispherical, the "width of the terminal" means the maximum diameter (terminal diameter) of the terminal when viewed from above.

The distance between adjacent terminals 91 (that is, the pitch between terminals) is not particularly limited, but is preferably 250 to 800 μm, more preferably 300 to 600 μm, and particularly preferably 350 to 500 μm. When the distance is equal to or greater than the lower limit, the embeddability of the terminal 91 can be further improved. Further, when the distance is equal to or less than the upper limit, the effect of suppressing the viscoelastic layer 12 from remaining above the terminal 91 is further enhanced.
In this specification, "distance between adjacent terminals" means the minimum distance between surfaces of adjacent terminals.

The present invention will be described in more detail below with reference to specific examples. However, the present invention is by no means limited to the examples shown below.

<Monomer>
Full names for abbreviated monomers are shown below.
HEA: 2-hydroxyethyl acrylate BA: n-butyl acrylate MMA: methyl methacrylate AAc: acrylic acid

(Production of Composition A for Forming Bonded Pressure-sensitive Adhesive Layer)
33.6 parts by mass of an acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 91 parts by mass of BA and 9 parts by mass of AAc, 66.4 parts by mass of ethyl methyl ketone as a solvent, and a polyvalent epoxy as a cross-linking agent 0.2 parts by mass of a compound (Mitsubishi Gas Chemical Co., Ltd., product name “TETRAD-C”, concentration of 5% N,N′-(cyclohexane-1,3-diylbismethylene)bis(diglycidylamine)) It added and stirred for 30 minutes, and the composition A for lamination adhesive layer formation was prepared.

(Production of lamination pressure-sensitive adhesive layer A)
The adhesive layer-forming composition A is applied to the release-treated surface of a release film (“SP-PET381031” manufactured by Lintec Co., Ltd., thickness 38 μm) in which one side of a polyethylene terephthalate film is release-treated by silicone treatment. and dried by heating at 100° C. for 1 minute to produce a laminated pressure-sensitive adhesive layer A having a thickness of 20 μm.

(Production of composition B for forming pressure-sensitive adhesive layer)
2-Methacryloyloxyethyl isocyanate (hereinafter abbreviated as "MOI") (about 50 mol% relative to HEA) is added to an acrylic copolymer consisting of 74 parts by mass of BA, 20 parts by mass of MMA and 6 parts by mass of HEA. A solution of the obtained resin (based adhesive, solid content 35% by mass) was prepared. To 100 parts by mass of this adhesive main agent, 0.5 parts by mass of tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solid content concentration: 37.5%) is added as a cross-linking agent. The mixture was stirred for 1 minute to prepare a composition B for forming an adhesive layer.

(Production of adhesive layer 14)
The pressure-sensitive adhesive layer-forming composition B is applied to the release-treated surface of a release film ("SP-PET381031" manufactured by Lintec Co., Ltd., thickness 38 μm) in which one side of a polyethylene terephthalate film is release-treated by silicone treatment, A pressure-sensitive adhesive layer 14 having a thickness of 10 μm was produced by drying by heating at 100° C. for 1 minute.

(Production of embedded layer forming composition A)
100 parts by weight of solution (solid content 33.6% by weight) of acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 91 parts by weight of BA and 9 parts by weight of AAc, 62 parts by weight of BA, 10 parts by weight of MMA and 28 parts by weight of HEA A solution (solid content 45% by mass) 93.5 parts by mass, and tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solid content concentration: 37.5%) 2.5 parts by mass as a cross-linking agent, polyvalent epoxy compound Add 2.5 parts by mass of (Mitsubishi Gas Chemical Co., Ltd., product name “TETRAD-C”, concentration of 5% N,N′-(cyclohexane-1,3-diylbismethylene)bis(diglycidylamine)) and stirred for 30 minutes to prepare a buried layer forming composition A.

(Production of embedded layer forming composition B)
100 parts by weight of solution (solid content 33.6% by weight) of acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 91 parts by weight of BA and 9 parts by weight of AAc, 62 parts by weight of BA, 10 parts by weight of MMA and 28 parts by weight of HEA A solution (solid content 45% by mass) and 15 parts by mass of tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solid content concentration: 37.5%) as a cross-linking agent, and stirred for 30 minutes. A composition B for forming a buried layer was prepared.

(Production of embedded layer forming composition C)
100 parts by weight of solution (solid content 33.6% by weight) of acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 91 parts by weight of BA and 9 parts by weight of AAc, 62 parts by weight of BA, 10 parts by weight of MMA and 28 parts by weight of HEA A solution (solid content 45% by mass) and 2.5 parts by mass of tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solid concentration: 37.5%) as a cross-linking agent, and stirred for 30 minutes. was performed to prepare a composition C for forming a buried layer.

(Production of embedded layer forming composition D)
100 parts by weight of solution (solid content 33.6% by weight) of acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 91 parts by weight of BA and 9 parts by weight of AAc, 62 parts by weight of BA, 10 parts by weight of MMA and 28 parts by weight of HEA A solution (solid content 45% by mass) 75 parts by mass, tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solid content concentration: 37.5%) 8.75 parts by mass as a cross-linking agent, polyepoxy compound (Mitsubishi 2.5 parts by mass of N,N'-(cyclohexane-1,3-diylbismethylene)bis(diglycidylamine) with a concentration of 5%, product name "TETRAD-C" manufactured by Gas Kagaku Co., Ltd. is added, A buried layer forming composition D was prepared by stirring for 30 minutes.

(Production of embedded layer forming composition E)
100 parts by weight of solution (solid content 33.6% by weight) of acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 91 parts by weight of BA and 9 parts by weight of AAc, 62 parts by weight of BA, 10 parts by weight of MMA and 28 parts by weight of HEA A solution (solid content 45% by mass) 75 parts by mass, tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name "BHS-8515", solid content concentration: 37.5%) 15 parts by mass as a cross-linking agent, polyepoxy compound (Mitsubishi Gas Chemical 5.0 parts by mass of N,N'-(cyclohexane-1,3-diylbismethylene)bis(diglycidylamine) having a concentration of 5%, product name "TETRAD-C" manufactured by Co., Ltd. was added, and the mixture was stirred for 30 minutes. A buried layer forming composition E was prepared by stirring.

(Production of embedded layer forming composition F)
100 parts by weight of solution (solid content 33.6% by weight) of acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 91 parts by weight of BA and 9 parts by weight of AAc, 62 parts by weight of BA, 10 parts by weight of MMA and 28 parts by weight of HEA A solution (solid content 45% by mass) 75 parts by mass, and 2.5 parts by mass of tolylene diisocyanate (manufactured by Toyochem Co., Ltd., product name “BHS-8515”, solid content concentration: 37.5%) as a cross-linking agent, polyepoxy compound (Mitsubishi Gas Chemical Co., Ltd., product name "TETRAD-C", N,N'-(cyclohexane-1,3-diylbismethylene)bis(diglycidylamine) with a concentration of 5%) 5.0 parts by mass is added, The mixture was stirred for 30 minutes to prepare a buried layer forming composition E.

(Base material)
A polyethylene terephthalate (PET) film (product name “Cosmo Shine A4100”, thickness 50 μm, manufactured by Toyobo Co., Ltd.) was used as the base material 11 .

(Preparation of semiconductor devices with terminals)
In evaluating the embedding properties of the terminal protection tapes of Examples and Comparative Examples, the following semiconductor devices with terminals were prepared.
・Semiconductor device with terminals (1)
Size of semiconductor device: 10mm x 10mm
Terminal height: 200 μm
Terminal diameter: 250 μm
Pitch between terminals: 400 μm
Number of terminals: 10 x 10 = 100

<Dynamic viscoelasticity (shear storage modulus) measurement method>
For the viscoelastic layer, using a dynamic mechanical analyzer (manufactured by TA Instruments, product name "DMA Q800"), the temperature was raised to 150 ° C. at a temperature increase rate of 10 ° C./min, and the storage elastic modulus G' and loss were measured. The elastic modulus G″ was measured, and the value of tan δ, which is the ratio (G″/G′) at 50° C., was obtained.

<Method for measuring stress relaxation>
A viscoelastic layer having a thickness of about 1 mm was formed by laminating a plurality of viscoelastic layers 12 after peeling off both release films of the terminal protection tape 1 having the configuration shown in FIG. A cylindrical evaluation sample having a diameter of 8 mm and a thickness of about 1 mm was prepared from this.
For the above sample, referring to JIS K7244-7, using a viscoelasticity measuring device (manufactured by Anton paar, product name "MCR302") at 50 ° C., rotating the jig and twisting the evaluation sample, 10 % (ie, 36°) constant torsional strain was continuously applied by device control, and the relaxation modulus G(t) (MPa) was measured. From the measurement results, the maximum relaxation modulus G (t) _max (MPa) is derived, and the minimum relaxation modulus G measured within 1 second after the maximum relaxation modulus G (t) _max is measured (t) _min (MPa) was derived.
Measurement temperature: 50°C
From the obtained maximum relaxation modulus G(t) _max (MPa) and minimum relaxation modulus G(t) _min (MPa), based on the following formula (1), the relaxation modulus fluctuation value X2 = ΔlogG(t) was calculated.
X2=logG(t) _max -logG(t) _min (1)

<Method for evaluating embeddability immediately after pressing>
The release film 22 on the adhesive layer 15 side of the terminal protection tape 3 in the form of FIG. , the release film 20 on the adhesive layer 14 side was peeled off, and the SUS plate 30 side was placed on a hot plate whose temperature was adjusted to 50°C. Next, as shown in FIG. 5A, the terminal side of the semiconductor device with terminals is placed downward, and a vacuum laminator is used to press pressure (load 1.1 MPa) on the viscoelastic layer 12. The pressing time was 40 s and the heating time was 50°C. This embeddability evaluation was performed on nine semiconductor devices with terminals.

Immediate after pressing, the embeddability was confirmed by observing from the side. All semiconductor devices with terminals had their lower surfaces adhered to the terminal protection tape, and the terminals were hidden by the terminal protection tape and could not be observed. was evaluated as good embeddability (5) immediately after pressing. If some terminals were found to be floating inside the semiconductor device, but the outer periphery of the semiconductor device was hidden by the terminal protection tape and the terminals could not be observed, the embedding property immediately after pressing was evaluated as good (4). When a portion of the peripheral portion of the semiconductor device was peeled off from the terminal protection tape and the terminal was observable in 50% or less, the embedding property immediately after pressing was evaluated as normal (3). When a portion of the peripheral portion of the semiconductor device was peeled off from the terminal protection tape and the terminal was observable at a rate of 50% or more, the embedding property immediately after pressing was evaluated as (2). The lower surface of at least one terminal-equipped semiconductor device was floating from the terminal protection tape, and all the terminals were observed between the terminal protection tape and the semiconductor device main body. ).

<Method for evaluating floating after one day of pressing>
After that, the semiconductor devices with terminals were allowed to cool to room temperature for one day, and the semiconductor devices with terminals were observed from the side to confirm floating. Those that were hidden by the terminal protection tape and could not be observed were evaluated as good float (5). Good floating (4) was evaluated when some terminals inside the semiconductor device were partially floated, but the terminal could not be observed because the outer peripheral portion of the semiconductor device was hidden by the terminal protection tape. When a part of the peripheral portion of the semiconductor device was peeled off from the terminal protection tape and the percentage of the terminal being observable was 50% or less, it was evaluated as floating normal (3). When a portion of the peripheral portion of the semiconductor device was peeled off from the terminal protection tape and the percentage of the terminal being observable was 50% or more, it was evaluated as somewhat poor (2). When the lower surface of the semiconductor device with terminals was lifted from the terminal protection tape and all the terminals were observed between the terminal protection tape and the semiconductor device main body, it was evaluated as floating failure (1).

[Example 1]
<Production of terminal protection tape>
The embedding layer forming composition A was applied to the release-treated surface of a release film ("SP-PET381031" manufactured by Lintec Co., Ltd., thickness 38 μm) in which one side of a polyethylene terephthalate film was subjected to a release treatment by silicone treatment, and then heated at 100°C. After drying by heating for 1 minute, a release film (“SP-PET382150” manufactured by Lintec Corporation, thickness 38 μm) in which one side of a polyethylene terephthalate film was release-treated with silicone was peeled off from the composition A for forming an embedded layer. The treated side was laminated to produce a buried layer with a thickness of 50 μm.
A 100 μm-thick burying layer was produced by bonding the surfaces of the burying layer from which the laminated release film was peeled off. In the same manner, the embedding layers were adhered and laminated to prepare an embedding layer A having a thickness of 300 μm.
A 300 μm thick embedding layer A was attached to a 10 μm thick pressure-sensitive adhesive layer 14 to produce a terminal protection tape 1 of Example 1 having a 310 μm thick viscoelastic layer 12 in the form shown in FIG. .

<Measurement of stress relaxation>
For the terminal protection tape 1 of Example 1, the relaxation modulus fluctuation value X2=ΔlogG(t) was calculated. Table 1 shows the results.

<Measurement of shear storage modulus of viscoelastic layer>
The tan δ (loss elastic modulus G″/storage elastic modulus G′) at 50° C. was determined for the terminal protection tape 1 of Example 1. Table 1 shows the results.

<Evaluation of embeddability>
The release film on the embedding layer A side of the terminal protection tape 1 of Example 1 was peeled off, and the polyethylene terephthalate (PET) film (product name “Cosmo Shine A4100”, thickness 50 μm, manufactured by Toyobo Co., Ltd.) serving as the base material was removed. A terminal protection tape 2 of Example 1 having a viscoelastic layer 12 in the form of substrate 11/embedding layer 13/adhesive layer 14 shown in FIG.

Further, an example having a viscoelastic layer 12 having the form shown in FIG. No. 1 terminal protection tape 3 was manufactured.

The embedability of the terminal protection tape 3 of Example 1 immediately after pressing was evaluated. Table 1 shows the results.

<Evaluation of float>
After that, the semiconductor device with terminals was allowed to cool to room temperature for one day, and floating was evaluated. Table 1 shows the results.

[Example 2]
<Production of terminal protection tape>
A viscoelastic layer 12 having a thickness of 310 μm and having the shape shown in FIG. A terminal protection tape 1 of Example 1 having was manufactured.

In the same manner as in Example 1, tan δ (loss elastic modulus G″/storage elastic modulus G′) at 50° C. was determined for the viscoelastic layer 12 of the terminal protection tape 1 of Example 2. Table 1 shows the relaxation modulus fluctuation value X2=ΔlogG(t).

In the same manner as in Example 1, using the terminal protection tape 1 of Example 2, the terminal protection tape 2 of Example 2 having the viscoelastic layer 12 of the form shown in FIG. 2 and the form shown in FIG. A terminal protection tape 3 of Example 2 having a viscoelastic layer 12 of was manufactured.

Regarding the terminal protection tape 3 of Example 2, similarly to Example 1, the embedding property immediately after pressing and the floating were evaluated. Table 1 shows the results.

[Example 3]
<Production of terminal protection tape>
In Example 1, the viscoelastic layer 12 having a thickness of 310 μm and having the form shown in FIG. A terminal protection tape 1 of Example 3 having

In the same manner as in Example 1, tan δ (loss elastic modulus G″/storage elastic modulus G′) at 50° C. was determined for the viscoelastic layer 12 of the terminal protection tape 1 of Example 3. Table 1 shows the relaxation modulus fluctuation value X2=ΔlogG(t).

In the same manner as in Example 1, using the terminal protection tape 1 of Example 3, the terminal protection tape 2 of Example 3 having the viscoelastic layer 12 of the form shown in FIG. 2 and the form shown in FIG. A terminal protection tape 3 of Example 3 having a viscoelastic layer 12 of was manufactured.

As in Example 1, the terminal protection tape 3 of Example 3 was evaluated for embeddability and float immediately after pressing. Table 1 shows the results.

[Comparative Example 1]
<Production of terminal protection tape>
In Example 1, the viscoelastic layer 12 having a thickness of 310 μm and having the shape shown in FIG. A terminal protection tape 1 of Comparative Example 1 having

In the same manner as in Example 1, tan δ (loss elastic modulus G″/storage elastic modulus G′) at 50° C. was determined for the viscoelastic layer 12 of the terminal protection tape 1 of Comparative Example 1. Table 1 shows the relaxation modulus fluctuation value X2=ΔlogG(t).

In the same manner as in Example 1, using the terminal protection tape 1 of Comparative Example 1, the terminal protection tape 2 of Comparative Example 1 having the viscoelastic layer 12 of the form shown in FIG. 2 and the form shown in FIG. A terminal protection tape 3 of Comparative Example 1 having a viscoelastic layer 12 of

As in Example 1, the terminal protection tape 3 of Comparative Example 1 was evaluated for embedding properties and lift immediately after pressing. Table 1 shows the results.

[Comparative Example 2]
<Production of terminal protection tape>
In Example 1, the viscoelastic layer 12 having a thickness of 310 μm and having the shape shown in FIG. A terminal protection tape 1 of Comparative Example 2 having

In the same manner as in Example 1, tan δ (loss elastic modulus G″/storage elastic modulus G′) at 50° C. was determined for the viscoelastic layer 12 of the terminal protection tape 1 of Comparative Example 2. Table 1 shows the relaxation modulus fluctuation value X2=ΔlogG(t).

In the same manner as in Example 1, using the terminal protection tape 1 of Comparative Example 2, the terminal protection tape 2 of Comparative Example 2 having the viscoelastic layer 12 of the form shown in FIG. 2 and the form shown in FIG. A terminal protection tape 3 of Comparative Example 2 having a viscoelastic layer 12 of

As in Example 1, the terminal protection tape 3 of Comparative Example 2 was evaluated for embedding properties immediately after pressing and floating. Table 1 shows the results.

[Comparative Example 3]
<Production of terminal protection tape>
In Example 1, the viscoelastic layer 12 having a thickness of 310 μm and having the form shown in FIG. A terminal protection tape 1 of Comparative Example 3 having

In the same manner as in Example 1, tan δ (loss elastic modulus G″/storage elastic modulus G′) at 50° C. was determined for the viscoelastic layer 12 of the terminal protection tape 1 of Comparative Example 3. Table 1 shows the relaxation modulus fluctuation value X2=ΔlogG(t).

In the same manner as in Example 1, using the terminal protection tape 1 of Comparative Example 3, the terminal protection tape 2 of Comparative Example 3 having the viscoelastic layer 12 of the form shown in FIG. 2 and the form shown in FIG. A terminal protection tape 3 of Comparative Example 3 having a viscoelastic layer 12 of

As in Example 1, the terminal protection tape 3 of Comparative Example 3 was evaluated for embeddability and lift immediately after pressing. Table 1 shows the results.

As shown by the results shown in Table 1, the terminal protection tape according to the comparative example had poor embedding properties (Comparative Example 2), or floated after one day of pressing (Fig. 7 (c) )), there is a risk of electrical short-circuiting between the terminal electrode and the electromagnetic wave shielding film when the electromagnetic wave shielding film is formed in shielding the semiconductor device with terminals from electromagnetic waves (FIG. 7(f)).

With the terminal protection tape according to the example of the present embodiment, bumps that tend to float can be embedded in the viscoelastic layer 12, and the terminal forming surface of the semiconductor device can be brought into close contact with the viscoelastic layer. No floating occurs even after a day. Therefore, when the terminal protection tape of the present embodiment is used to shield a semiconductor device with terminals from electromagnetic waves, when the electromagnetic wave shielding film is formed, the bumps, which are terminal electrodes, and the electromagnetic wave shielding film are electrically short-circuited. can be prevented, and there is no need to provide a complicated masking part or the like in the process.

INDUSTRIAL APPLICABILITY The terminal protection tape of the present invention can be used for protecting the terminals of a semiconductor device with terminals when shielding the semiconductor device with terminals from electromagnetic waves. Using the terminal protection tape of the present invention, a semiconductor device with terminals can be electromagnetically shielded, and a semiconductor device with an electromagnetic shielding film can be manufactured.

DESCRIPTION OF SYMBOLS 1,2,3... Terminal protection tape, 10... Electromagnetic shielding film, 11... Base material, 12... Viscoelastic layer, 13... Embedding layer, 14... Adhesive layer , 15... Second adhesive layer (bonded adhesive layer), 30... Support, 6... Semiconductor device assembly with terminal, 60... Semiconductor device assembly, 60a... Terminal Formation surface 61, 62 Electronic component 63 Circuit board 63a Terminal formation surface 64 Sealing resin layer 65 Semiconductor device with terminal 66 Electromagnetic wave Semiconductor device with shield film 91 Terminal 101 Conductive resin 20, 21, 22 Release film

Claims (6)

A terminal protection tape used in a process of forming an electromagnetic wave shielding film on a semiconductor device with terminals,
having a viscoelastic layer,
In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50°C is 0.2 or more,
Regarding the viscoelastic layer, a cylindrical evaluation sample with a diameter of 8 mm and a thickness of about 1 mm is subjected to a constant torsional strain of 10% (36 °) at 50 ° C., and the maximum relaxation modulus is measured. _{The following} formula ₍ 1) A terminal protection tape in which the relaxation elastic modulus fluctuation value X2 obtained based on 1) satisfies the following formula (2).
X2=logG(t) _max -logG(t) _min (1)
0.12≦X2 (2) The terminal protection tape according to claim 1, wherein the viscoelastic layer has an embedding layer and an adhesive layer. 3. The terminal protection tape according to claim 2, comprising said adhesive layer, said embedding layer, and a substrate in this order. 4. The terminal protection tape according to claim 3, which is a double-sided tape having said adhesive layer, said embedded layer, said base material, and a second adhesive layer in this order. a step of embedding the terminals of the terminal-equipped semiconductor device in the viscoelastic layer of the terminal protection tape according to any one of claims 1 to 4;
forming an electromagnetic wave shielding film on the exposed surface of the semiconductor device with terminals not embedded in the viscoelastic layer of the terminal protection tape;
A method of manufacturing a semiconductor device with an electromagnetic wave shielding film comprising: a step of embedding terminals of a semiconductor device assembly with terminals in the viscoelastic layer of the terminal protection tape according to any one of claims 1 to 4;
a step of dicing the semiconductor device assembly with terminals to obtain semiconductor devices with terminals in which the terminals are embedded in the viscoelastic layer of the terminal protection tape;
forming an electromagnetic wave shielding film on the exposed surface of the semiconductor device with terminals not embedded in the viscoelastic layer of the terminal protection tape;
A method of manufacturing a semiconductor device with an electromagnetic wave shielding film comprising:

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