JP7297380B2 - アクティブマトリクスバックプレーンと併用するための高誘電定数を有する層状構造 - Google Patents
アクティブマトリクスバックプレーンと併用するための高誘電定数を有する層状構造 Download PDFInfo
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- JP7297380B2 JP7297380B2 JP2021178644A JP2021178644A JP7297380B2 JP 7297380 B2 JP7297380 B2 JP 7297380B2 JP 2021178644 A JP2021178644 A JP 2021178644A JP 2021178644 A JP2021178644 A JP 2021178644A JP 7297380 B2 JP7297380 B2 JP 7297380B2
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Description
本発明は、例えば以下を提供する。
(項目1)
層状誘電体であって、
酸化アルミニウムまたは酸化ハフニウムを含む第1の層であって、9nm~80nmの厚さを有する、第1の層と、
酸化タンタルまたは酸化ハフニウムを含む第2の層であって、40nm~250nmの厚さを有する、第2の層と、
酸化タンタルまたは酸化ハフニウムを含む第3の層であって、5nm~60nmの厚さを有する、第3の層と
を備え、前記第2の層は、前記第1の層と前記第3の層との間に配置される、層状誘電体。
(項目2)
前記第1の層は、Al 2 O 3 を備え、前記第2の層は、HfO 2 を備え、前記第3の層は、Ta 2 O 5 を備える、項目1に記載の層状誘電体。
(項目3)
前記第1の層は、Al 2 O 3 を備え、前記第2の層は、Ta 2 O 5 を備え、前記第3の層は、HfO 2 を備える、項目1に記載の層状誘電体。
(項目4)
前記第1の層は、20~40nmの厚さである、項目1に記載の層状誘電体。
(項目5)
前記第2の層は、100~150nmの厚さである、項目1に記載の層状誘電体。
(項目6)
前記第3の層は、10~35nmの厚さである、項目1に記載の層状誘電体。
(項目7)
項目1に記載の層状誘電体を含む、基板。
(項目8)
前記基板と項目1に記載の層状誘電体との間に配置される複数の電極をさらに備える、項目7に記載の基板。
(項目9)
前記電極は、アレイ内に配置され、各電極は、薄膜トランジスタ(TFT)と関連付けられる、項目8に記載の基板。
(項目10)
前記第3の層上に堆積させられた疎水性層をさらに備える、項目9に記載の基板。
(項目11)
前記疎水性層は、10~50nmの厚さである、項目10に記載の基板。
(項目12)
前記層状誘電体の誘電強度は、6MV/cmを上回る、項目1に記載の層状誘電体。
(項目13)
層状誘電体を作成する方法であって、
基板を提供することと、
原子層堆積を使用して、酸化アルミニウムまたは酸化ハフニウムを含む第1の層を堆積させることであって、前記第1の層は、9nm~80nmの厚さを有する、ことと、
スパッタリングを使用して、酸化タンタルまたは酸化ハフニウムを含む第2の層を堆積させることであって、前記第2の層は、40nm~250nmの厚さを有する、ことと、
原子層堆積を使用して、酸化タンタルまたは酸化ハフニウムを含む第3の層を堆積させることであって、前記第3の層は、5nm~60nmの厚さを有する、ことと
を含む、方法。
(項目14)
電気泳動ディスプレイであって、
光透過性電極と、
誘電層と、
第1の光散乱粒子のセットと、粒子の2つの付加的なセットとを備え、前記粒子の2つの付加的なセットは、相互に、かつ前記第1の光散乱粒子のセットとも異なる光学特性を有する、電気泳動層と、
背面電極と、
を含む、電気泳動ディスプレイ。
(項目15)
前記誘電層は、10nmの厚さ~100nmの厚さである、項目14に記載の電気泳動ディスプレイ。
(項目16)
前記誘電層は、25nmの厚さ~75nmの厚さである、項目14に記載の電気泳動ディスプレイ。
(項目17)
前記誘電層は、酸化アルミニウム、酸化ハフニウム、酸化タンタル、または窒化ケイ素を備える、項目14に記載の電気泳動ディスプレイ。
(項目18)
前記電気泳動層は、荷電顔料粒子の4つのセットを含む、項目14に記載の電気泳動ディスプレイ。
(項目19)
DC非平衡波形を用いて電気泳動ディスプレイを駆動する方法であって、
電気泳動ディスプレイを提供することであって、前記電気泳動ディスプレイは、
光透過性電極と、
誘電層と、
電気泳動層と、
背面電極と
を含む、ことと、
電圧源を提供することと、
駆動部分および接地部分の両方を含む、DC非平衡波形を用いて、前記電気泳動層を駆動することと
を含む、方法。
(項目20)
前記駆動部分は、第1の期間の間行われ、前記接地部分は、第2の期間の間行われ、前記第2の期間は、前記第1の期間と同じ長さまたはより長い、項目19に記載の方法。
+VH>+VL>0>-VL>-VH
駆動方法は、(a)電極間に、+VHまたは-VHのいずれかであり第4の粒子を第1の電極に向かって駆動する極性の一連の第1のパルスを印加することによって、視認表面において、第4の粒子の色と、第4の粒子および第2の粒子の混合物の色とを交互に表示することであって、該一連の第1のパルスは、+VLまたは-VLであり第1のパルスと反対極性であるがより長い持続時間である第2のパルスと交互させる、ことと、(b)電極間に、+VHまたは-VHのいずれかであり第3の粒子を第1の電極に向かって駆動する極性の一連の第3のパルスを印加することによって、視認表面において、第3の粒子の色と、第3の粒子および第2の粒子の混合物の色とを交互に表示することであって、該一連の第3のパルスは、+VLまたは-VLであり第3のパルスと反対極性であるがより長い持続時間の第4のパルスと交互する、こととを含み得る。
高k誘電スタックが、図6に関して上記に説明される技法を使用して加工された。ITOコーティングされたガラス(Sigma-Aldrich)の初期基板が、約115分の総堆積時間および180℃の基板温度を伴って、Veeco/CNT Fiji F200を使用する酸素プラズマALDを使用して、25nmのAl2O3でコーティングされた。堆積させられたAl2O3を伴う基板が、反応器から除去され、Bruker Dimension Icon原子間力顕微鏡検査ツールを使用して撮像された。AFM器具によって捕捉された画像が、図7の右下に示される。AFM画像を横断した点線における例示的表面粗度測定は、図8の下のグラフに示される。予期されるように、第1のALDステップは、高さ変動性を殆ど伴わない表面を達成する。
モデル回路に図示されるように、誘電層への静電容量C5の追加は、若干、ディスプレイの結像層内の電圧を変化させ、達成され得る色の数に影響を及ぼすことが予期され得る。この電圧降下に起因して喪失される色の量は、ディスプレイの背面電極にわたって異なる厚さの窒化ケイ素層を含む4つの顔料(CMYW)試験セルを使用して、実験的に検証された。試験セルの詳細は、米国特許第9,921,451号(参照することによってその全体として本明細書に援用される)に見出されることができる。結果は、下記の表1に示される。
表1.試験セル内の4粒子(CMYW)電気泳動媒体の色域への窒化ケイ素誘電体の影響。
電気泳動媒体(上記)の応答を改良することに加え、試験ディスプレイの寿命への追加される誘電層の影響もまた、評価された。約8”対角線の2つの試験ディスプレイが、実施例2のCMYW4粒子電気泳動媒体を使用して調製された。制御は、商業用電子リーダに見出されるような標準的アクティブマトリクスTFTバックプレーンを使用した。他の試験ディスプレイでは、ピクセル電極は、30nmの酸化タンタルでコーティングされた。酸化タンタル層の連続性は、図12のグラフに示されるように、完璧ではなかった。酸化タンタルが、ピンホールまたは瑕疵がない場合、酸化タンタル「遮断」バックプレーンに関して、著しく少ない抵抗電流密度が存在し得ることが予期され得る。ディスプレイは、(a)3秒にわたって30V、その後、(b)20msにわたって接地され、次いで、(c)6秒にわたって浮動するシーケンスを使用する高度なDC非平衡の方法で駆動された。この試験サイクルは、数回繰り返された。酸化タンタルコーティングの欠点にもかかわらず、4時間の駆動後、ディスプレイが横並びで比較されたとき、試験パターンにおける白色状態の「黄化」に顕著な差異があった。黄化の量における差異は、さらに4時間の駆動後、より顕著であった。したがって、高度なDC非平衡の波形の存在下では、酸化タンタルコーティングされたバックプレーンを有するディスプレイは、より少ない電気化学的性質を受ける証拠を示した。
Claims (13)
- アレイに配置された電極を有するエレクトロウェッティングディスプレイのために使用されるエレクトロウェッティングオン誘電体(EWoD)デバイスであって、各電極は、薄膜トランジスタ(TFT)と関連付けられ、前記デバイスは、層状誘電体を有し、前記層状誘電体は、
酸化アルミニウムまたは酸化ハフニウムを含む第1の層であって、20nm~40nmの厚さを有する、第1の層と、
酸化タンタルまたは酸化ハフニウムを含む第2の層であって、40nm~250nmの厚さを有する、第2の層と、
酸化タンタルまたは酸化ハフニウムを含む第3の層であって、10nm~35nmの厚さを有する、第3の層と
を備え、前記第2の層は、前記第1の層と前記第3の層との間に配置される、エレクトロウェッティングオン誘電体(EWoD)デバイス。 - 前記第1の層は、Al2O3を備え、前記第2の層は、HfO2を備え、前記第3の層は、Ta2O5を備える、請求項1に記載のエレクトロウェッティングオン誘電体(EWoD)デバイス。
- 前記第1の層は、Al2O3を備え、前記第2の層は、Ta2O5を備え、前記第3の層は、HfO2を備える、請求項1に記載のエレクトロウェッティングオン誘電体(EWoD)デバイス。
- 前記層状誘電体は、150nmよりも大きい厚さである、請求項1に記載のエレクトロウェッティングオン誘電体(EWoD)デバイス。
- 前記第2の層は、100~150nmの厚さである、請求項1に記載のエレクトロウェッティングオン誘電体(EWoD)デバイス。
- 前記第3の層上に堆積させられた疎水性層をさらに備える、請求項1に記載のエレクトロウェッティングオン誘電体(EWoD)デバイス。
- 前記疎水性層は、10~50nmの厚さである、請求項6に記載のエレクトロウェッティングオン誘電体(EWoD)デバイス。
- 前記層状誘電体の誘電強度は、6MV/cmを上回る、請求項1に記載のエレクトロウェッティングオン誘電体(EWoD)デバイス。
- アレイに配置された電極を有するエレクトロウェッティングディスプレイのために使用されるエレクトロウェッティングオン誘電体(EWoD)デバイスを作成する方法であって、各電極は、薄膜トランジスタ(TFT)と関連付けられ、前記デバイスは、層状誘電体を有し、前記方法は、
基板を提供することと、
原子層堆積を使用して、酸化アルミニウムまたは酸化ハフニウムを含む第1の層を堆積させることであって、前記第1の層は、20nm~40nmの厚さを有する、ことと、
スパッタリングを使用して、酸化タンタルまたは酸化ハフニウムを含む第2の層を堆積させることであって、前記第2の層は、40nm~250nmの厚さを有する、ことと、
原子層堆積を使用して、酸化タンタルまたは酸化ハフニウムを含む第3の層を堆積させることであって、前記第3の層は、10nm~35nmの厚さを有する、ことと
を含む、方法。 - 前記第1の層は、Al 2 O 3 を備え、前記第2の層は、HfO 2 を備え、前記第3の層は、Ta 2 O 5 を備える、請求項9に記載の方法。
- 前記第1の層は、Al 2 O 3 を備え、前記第2の層は、Ta 2 O 5 を備え、前記第3の層は、HfO 2 を備える、請求項9に記載の方法。
- 前記第3の層上に疎水性層を堆積させることさらに含む、請求項9に記載の方法。
- 前記疎水層は、10~50nmの厚さである、請求項12に記載の方法。
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TW202132099A (zh) | 2021-09-01 |
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