JP7294590B2 - 偏光子ナノインプリントリソグラフィ - Google Patents
偏光子ナノインプリントリソグラフィ Download PDFInfo
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- JP7294590B2 JP7294590B2 JP2020539284A JP2020539284A JP7294590B2 JP 7294590 B2 JP7294590 B2 JP 7294590B2 JP 2020539284 A JP2020539284 A JP 2020539284A JP 2020539284 A JP2020539284 A JP 2020539284A JP 7294590 B2 JP7294590 B2 JP 7294590B2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
- G02B5/3041—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid comprising multiple thin layers, e.g. multilayer stacks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00634—Production of filters
- B29D11/00644—Production of filters polarizing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/0073—Optical laminates
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ophthalmology & Optometry (AREA)
- Mechanical Engineering (AREA)
- Polarising Elements (AREA)
Description
Claims (10)
- 偏光子の作成方法であって、
基板上に配置される偏光構造を提供する段階であって、前記偏光構造は偏光のためのパターンで配置される、段階と、
前記偏光構造の上に未硬化の充填層を設け、且つ、前記偏光構造間のチャネルに延在させる段階であって、前記未硬化の充填層は溶媒内の分子を含む溶液であり、前記溶媒は水及び有機液体を含み、前記分子は反応基に結合された金属原子を含み、前記未硬化の充填層の化合物及び前記偏光構造の表面の化合物は互いに誘引性である、段階と、
前記分子を反応させて、互いに相互接続された前記金属原子の固体を形成して、硬化充填層を画定する段階と、を備えており、
前記金属原子はアルミニウム、チタン、またはそれらの組み合わせを含む、方法。 - 各反応基は、独立に、-Cl、-OR2、-OCOR2、又は-N(R2)2であり、R2はアルキル基である、請求項1に記載の方法。
- 前記基板は第1基板であり、前記方法はさらに、前記未硬化の充填層を前記硬化充填層へと形成する前に、第2基板を前記未硬化の充填層上に配置する段階を備える、請求項1又は2に記載の方法。
- 前記硬化充填層は、1.3以下の屈折率を有する、請求項1から3のいずれか一項に記載の方法。
- 前記未硬化の充填層内の固体無機ナノ粒子の99%以上が、2nm以下の直径を有する、請求項1から4のいずれか一項に記載の方法。
- 前記偏光構造の表面の表面エネルギーは、前記未硬化の充填層の表面張力より大きい、請求項1から5のいずれか一項に記載の方法。
- 前記表面エネルギーは、前記未硬化の充填層の前記表面張力より5倍大きい、請求項6に記載の方法。
- 前記方法はさらに、前記分子を反応させて前記固体を形成する前に、前記未硬化の充填層に構造のパターンをインプリントする段階であって、前記構造は入射光の反射を減らす、前記偏光子からの熱伝導を増大させる、またはその両方を行うようにサイズ決めおよび形作られる、段階を備える、請求項1から7のいずれか一項に記載の方法。
- 前記未硬化の充填層を設ける段階及び前記分子を反応させて前記固体を形成する段階は、以下の段階を以下の順で含み、すなわち、
前記偏光構造上に前記未硬化の充填層の一部をスピンコーティングして第1スピンコーティングを画定する段階と、
前記偏光子をベーキングして第1ベーキングを画定する段階と、
前記偏光構造上に前記未硬化の充填層の一部をスピンコーティングして第2スピンコーティングを画定する段階と、次いで
前記偏光子をベーキングして第2ベーキングを画定する段階と、である、請求項1から8のいずれか一項に記載の方法。 - 前記第1スピンコーティングは1000rpm以上及び4000rpm以下のスピードで実行され、前記第1ベーキングは50oC以上及び300oC以下の温度で実行され、前記第2スピンコーティングは1000rpm以上及び4000rpm以下のスピードで実行され、前記第2ベーキングは50oC以上及び300oC以下の温度で実行される、請求項9に記載の方法。
Priority Applications (1)
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JP2023086744A JP2023106559A (ja) | 2018-04-12 | 2023-05-26 | 偏光子ナノインプリントリソグラフィ |
Applications Claiming Priority (5)
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US201862656759P | 2018-04-12 | 2018-04-12 | |
US62/656,759 | 2018-04-12 | ||
US16/366,932 | 2019-03-27 | ||
US16/366,932 US11079528B2 (en) | 2018-04-12 | 2019-03-27 | Polarizer nanoimprint lithography |
PCT/US2019/025637 WO2019199548A1 (en) | 2018-04-12 | 2019-04-03 | Polarizer nanoimprint lithography |
Related Child Applications (1)
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JP2023086744A Division JP2023106559A (ja) | 2018-04-12 | 2023-05-26 | 偏光子ナノインプリントリソグラフィ |
Publications (3)
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JP2021517980A JP2021517980A (ja) | 2021-07-29 |
JPWO2019199548A5 JPWO2019199548A5 (ja) | 2022-01-28 |
JP7294590B2 true JP7294590B2 (ja) | 2023-06-20 |
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JP2020539284A Active JP7294590B2 (ja) | 2018-04-12 | 2019-04-03 | 偏光子ナノインプリントリソグラフィ |
JP2023086744A Pending JP2023106559A (ja) | 2018-04-12 | 2023-05-26 | 偏光子ナノインプリントリソグラフィ |
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Country Status (4)
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US (3) | US11079528B2 (ja) |
JP (2) | JP7294590B2 (ja) |
CN (2) | CN112074761B (ja) |
WO (1) | WO2019199548A1 (ja) |
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US11079528B2 (en) * | 2018-04-12 | 2021-08-03 | Moxtek, Inc. | Polarizer nanoimprint lithography |
PH12020050238A1 (en) | 2019-08-27 | 2021-06-14 | Moxtek Inc | Wire grid polarizer with slanted support-ribs |
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2019
- 2019-03-27 US US16/366,932 patent/US11079528B2/en active Active
- 2019-04-03 WO PCT/US2019/025637 patent/WO2019199548A1/en active Application Filing
- 2019-04-03 CN CN201980019164.XA patent/CN112074761B/zh active Active
- 2019-04-03 CN CN202310144666.3A patent/CN116009351A/zh active Pending
- 2019-04-03 JP JP2020539284A patent/JP7294590B2/ja active Active
-
2021
- 2021-06-28 US US17/359,923 patent/US11754765B2/en active Active
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2023
- 2023-05-26 JP JP2023086744A patent/JP2023106559A/ja active Pending
- 2023-07-31 US US18/362,066 patent/US20230375766A1/en active Pending
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Publication number | Publication date |
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JP2021517980A (ja) | 2021-07-29 |
US11754765B2 (en) | 2023-09-12 |
US20210325589A1 (en) | 2021-10-21 |
WO2019199548A1 (en) | 2019-10-17 |
CN112074761A (zh) | 2020-12-11 |
CN116009351A (zh) | 2023-04-25 |
US20230375766A1 (en) | 2023-11-23 |
JP2023106559A (ja) | 2023-08-01 |
CN112074761B (zh) | 2023-02-03 |
US20190317260A1 (en) | 2019-10-17 |
US11079528B2 (en) | 2021-08-03 |
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