JP7293379B2 - 成膜装置 - Google Patents
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- JP7293379B2 JP7293379B2 JP2021550505A JP2021550505A JP7293379B2 JP 7293379 B2 JP7293379 B2 JP 7293379B2 JP 2021550505 A JP2021550505 A JP 2021550505A JP 2021550505 A JP2021550505 A JP 2021550505A JP 7293379 B2 JP7293379 B2 JP 7293379B2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
- H05H1/246—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube the plasma being activated using external electrodes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
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- H05H2245/00—Applications of plasma devices
- H05H2245/40—Surface treatments
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Description
以下、本開示の一実施形態に係る成膜装置について説明する。第1実施形態に係る成膜装置は、大気圧下において生成したプラズマにより原料ガスを分解して化学反応が促進させ、この化学反応により生じる生成物を基板表面に堆積させる大気圧プラズマ成膜装置である。
Si(OC2H5)4+12O2 → SiO2+8CO2+10H2O
次に、第2実施形態に係る成膜装置について説明する。図6及び図7において、第2実施形態に係る成膜装置10Aは、第1実施形態に係る成膜装置10と同様に、内管11と、外管12と、第1電極13と、第2電極14と、第1電源15とを有する。
次に、第1及び第2実施形態の変形例について説明する。上記第1及び第2実施形態では、成膜対象の基板を固設しているが、基板を搬送機構により移動させながら成膜を行ってもよい。
次に、第1及び第2実施形態の成膜装置を用いた成膜の各種実験例について説明する。各実験では、外管12の直径D1、内管11の直径D2、第2電極14の長さL1、内管11の突出量δ、基板バイアスを成膜条件とする。その他の成膜条件は、上記第1及び第2実施形態で示した通りである。なお、各実験では、基板として、平板状のアクリル板を用いる。
図9は、SiO2膜Fの膜質のL1/D1依存性に関する実験結果を示す。L1/D1は、第2電極14の長さL1を外管12の直径D1で割った値である。本実験では、基準としての基準成膜条件(No.1)と、基準成膜条件(No.1)に対して第2電極14の長さL1を変更した他の6つの成膜条件(No.2~7)に基づいて成膜を行った。なお、本実験では、基板を接地し、内管11の端部の突出量δを「0」としている。
1≦L1/D1 ・・・(1)
1≦L1/D1≦10 ・・・(2)
図11は、SiO2膜Fの膜質のL1/D1依存性に関する実験結果を示す。本実験では、基準としての基準成膜条件(No.1)と、基準成膜条件(No.1)に対して外管12の直径D1を変更した他の4つの成膜条件(No.2~5)に基づいて成膜を行った。なお、成膜条件(No.5)では、外管12の直径D1と第2電極14の長さL1とを変更した。
図13は、SiO2膜Fの膜質のD2/D1依存性に関する実験結果を示す。D2/D1は、内管11の直径D2を外管12の直径D1で割った値である。本実験では、基準としての基準成膜条件(No.1)と、基準成膜条件(No.1)に対して内管11の直径D2を変更した他の3つの成膜条件(No.2~4)に基づいて成膜を行った。
D2/D1≦0.7 ・・・(3)
図14は、SiO2膜Fの膜質のδ依存性に関する実験結果を示す。δは、図6に示す内管11の端部の突出量である。本実験では、「δ=0」とした場合(すなわち第1実施形態1)の基準成膜条件(No.1)と、「δ>0」とした場合(すなわち第2実施形態)の成膜条件(No.2)と、「δ<0」とした場合の成膜条件(No.3)に基づいて成膜を行った。
図15は、SiO2膜Fの膜質の基板バイアス依存性に関する実験結果を示す。GNDは、基板が接地されていることを示している。本実験では、基板を接地した場合の基準成膜条件(No.1)と、基板に-1000Vの直流電圧を印加した場合の成膜条件(No.2)と、基板に+1000Vの直流電圧を印加した場合の成膜条件(No.3)に基づいて成膜を行った。
図16は、実験例1~5の各実験結果から最適な条件を選択して成膜を行った場合における実験結果を示す。具体的には、図16に示す最適条件は、図1に示す基準成膜条件(No.1)から内管11の突出量δと基板バイアスとを変更したものである。このように、「δ=7mm」とし、基板バイアスを-1000Vとすることにより、SiO2膜F中の炭素濃度が低下し、膜質がさらに改善された。
Claims (9)
- 二重管の放出口から放出されたプラズマが原料ガスを分解することにより生じる生成物を基板に堆積させる成膜装置であって、
成膜原料を含有する原料ガスを流通させて下流側の前記放出口へ導く内管と、
前記内管が内部に挿通されており、プラズマ生成ガスを流通させて放電により生じたプラズマを下流側の前記放出口へ導く外管と、
前記外管の周囲に環状に形成され、かつ接地された第1電極と、
前記外管の周囲に環状に形成され、かつ交流電圧又はパルス状電圧が印加される第2電極と、
を備え、
前記第2電極は前記第1電極よりも下流側に配置され、かつ、前記第2電極の軸方向の長さをL1、前記外管の直径をD1とした場合に、1≦L1/D1≦10の関係を満たす成膜装置。 - 前記交流電圧又は前記パルス状電圧は、周波数が500kHz以下である請求項1に記載の成膜装置。
- 前記内管の直径をD2とした場合に、D2/D1≦0.7の関係を満たす請求項1又は2に記載の成膜装置。
- 前記放出口において、前記内管の端部の前記外管の端部に対する軸方向への突出量が0以上である請求項1から3いずれか1項に記載の成膜装置。
- 前記基板が絶縁体であって、前記基板の前記放出口に対向する面とは反対側の面に第3電極が形成されている請求項1から4いずれか1項に記載の成膜装置。
- 前記第3電極は接地されている請求項5に記載の成膜装置。
- 前記第3電極には負電圧が印加される請求項5に記載の成膜装置。
- 前記第3電極に印加される負電圧は、直流又は直流パルスである請求項7に記載の成膜装置。
- 前記放出口に対して前記基板を相対的に移動させる搬送部を備える請求項1から8いずれか1項に記載の成膜装置。
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PCT/JP2020/033691 WO2021065357A1 (ja) | 2019-09-30 | 2020-09-04 | 成膜装置 |
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JP2001006897A (ja) | 1999-04-23 | 2001-01-12 | Matsushita Electric Works Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2008098128A (ja) | 2006-10-11 | 2008-04-24 | Kunihide Tachibana | 大気圧プラズマ発生照射装置 |
WO2010082561A1 (ja) | 2009-01-13 | 2010-07-22 | リバーベル株式会社 | プラズマ生成装置及び方法 |
JP2011202232A (ja) | 2010-03-25 | 2011-10-13 | Panasonic Electric Works Co Ltd | 成膜装置 |
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JP2803017B2 (ja) * | 1993-06-07 | 1998-09-24 | 工業技術院長 | 抗血栓性医用材料及び医療用具並びにこれらの製造方法、製造装置及びプラズマ処理装置 |
JP4221847B2 (ja) * | 1999-10-25 | 2009-02-12 | パナソニック電工株式会社 | プラズマ処理装置及びプラズマ点灯方法 |
AU2003211351A1 (en) * | 2002-02-20 | 2003-09-09 | Haiden Laboratory Inc. | Plasma processing device and plasma processing method |
JP2004091837A (ja) | 2002-08-30 | 2004-03-25 | Konica Minolta Holdings Inc | 製膜処理装置 |
US20090014423A1 (en) * | 2007-07-10 | 2009-01-15 | Xuegeng Li | Concentric flow-through plasma reactor and methods therefor |
TWI381827B (zh) * | 2007-06-28 | 2013-01-11 | Ind Tech Res Inst | 表面處理裝置及方法 |
EP2312612B1 (en) * | 2009-10-16 | 2017-03-08 | Korea Institute Of Machinery & Materials | Plasma reactor for abating hazardous materials and driving method thereof |
JP5849218B2 (ja) | 2011-06-14 | 2016-01-27 | パナソニックIpマネジメント株式会社 | 成膜装置 |
KR102139391B1 (ko) * | 2012-05-18 | 2020-07-30 | 레이브 엔.피., 인크. | 오염 제거 장치 및 방법 |
US10008367B2 (en) * | 2013-06-26 | 2018-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gas diffuser unit, process chamber and wafer processing method |
ITPD20130310A1 (it) * | 2013-11-14 | 2015-05-15 | Nadir S R L | Metodo per la generazione di un getto o jet di plasma atmosferico e dispositivo minitorcia al plasma atmosferico |
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- 2020-09-04 JP JP2021550505A patent/JP7293379B2/ja active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001006897A (ja) | 1999-04-23 | 2001-01-12 | Matsushita Electric Works Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2008098128A (ja) | 2006-10-11 | 2008-04-24 | Kunihide Tachibana | 大気圧プラズマ発生照射装置 |
WO2010082561A1 (ja) | 2009-01-13 | 2010-07-22 | リバーベル株式会社 | プラズマ生成装置及び方法 |
JP2011202232A (ja) | 2010-03-25 | 2011-10-13 | Panasonic Electric Works Co Ltd | 成膜装置 |
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EP4039849B1 (en) | 2023-08-23 |
EP4039849A1 (en) | 2022-08-10 |
JPWO2021065357A1 (ja) | 2021-04-08 |
EP4039849A4 (en) | 2022-11-02 |
US20220170158A1 (en) | 2022-06-02 |
WO2021065357A1 (ja) | 2021-04-08 |
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