JP7288336B2 - アライメントシステム、成膜装置、アライメント方法、成膜方法及び電子デバイスの製造方法 - Google Patents

アライメントシステム、成膜装置、アライメント方法、成膜方法及び電子デバイスの製造方法 Download PDF

Info

Publication number
JP7288336B2
JP7288336B2 JP2019075734A JP2019075734A JP7288336B2 JP 7288336 B2 JP7288336 B2 JP 7288336B2 JP 2019075734 A JP2019075734 A JP 2019075734A JP 2019075734 A JP2019075734 A JP 2019075734A JP 7288336 B2 JP7288336 B2 JP 7288336B2
Authority
JP
Japan
Prior art keywords
mask
substrate
electrostatic chuck
distance
adjusting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019075734A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020070493A (ja
Inventor
一史 柏倉
博 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
Original Assignee
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Publication of JP2020070493A publication Critical patent/JP2020070493A/ja
Application granted granted Critical
Publication of JP7288336B2 publication Critical patent/JP7288336B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2019075734A 2018-10-31 2019-04-11 アライメントシステム、成膜装置、アライメント方法、成膜方法及び電子デバイスの製造方法 Active JP7288336B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0131821 2018-10-31
KR1020180131821A KR20200049034A (ko) 2018-10-31 2018-10-31 얼라인먼트 시스템, 성막 장치, 얼라인먼트 방법, 성막 방법 및 전자 디바이스의 제조 방법

Publications (2)

Publication Number Publication Date
JP2020070493A JP2020070493A (ja) 2020-05-07
JP7288336B2 true JP7288336B2 (ja) 2023-06-07

Family

ID=70496011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019075734A Active JP7288336B2 (ja) 2018-10-31 2019-04-11 アライメントシステム、成膜装置、アライメント方法、成膜方法及び電子デバイスの製造方法

Country Status (3)

Country Link
JP (1) JP7288336B2 (zh)
KR (1) KR20200049034A (zh)
CN (1) CN111118466A (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7202329B2 (ja) * 2020-05-11 2023-01-11 キヤノントッキ株式会社 アライメント装置、成膜装置、アライメント方法、電子デバイスの製造方法、プログラム及び記憶媒体
JP7266555B2 (ja) * 2020-06-16 2023-04-28 キヤノン株式会社 アライメント方法および蒸着方法
JP7106608B2 (ja) * 2020-08-26 2022-07-26 キヤノントッキ株式会社 マーク検出装置、アライメント装置、成膜装置、マーク検出方法、および、成膜方法
JP7177128B2 (ja) * 2020-09-30 2022-11-22 キヤノントッキ株式会社 成膜装置、検知装置、検知方法、及び電子デバイスの製造方法
JP7299202B2 (ja) * 2020-09-30 2023-06-27 キヤノントッキ株式会社 成膜装置、基板吸着方法、及び電子デバイスの製造方法
JP7361671B2 (ja) * 2020-09-30 2023-10-16 キヤノントッキ株式会社 成膜装置、調整装置、調整方法、及び電子デバイスの製造方法
JP7419288B2 (ja) 2021-03-30 2024-01-22 キヤノントッキ株式会社 制御装置、成膜装置、制御方法、及び電子デバイスの製造方法
JP7390328B2 (ja) * 2021-03-30 2023-12-01 キヤノントッキ株式会社 制御装置、基板吸着方法及び電子デバイスの製造方法
CN115386843B (zh) * 2021-05-24 2024-03-01 广东聚华印刷显示技术有限公司 蒸镀装置及校正方法
CN115369358B (zh) * 2021-09-08 2023-12-05 广东聚华印刷显示技术有限公司 蒸镀装置以及蒸镀基板分离方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018110953A1 (en) 2016-12-12 2018-06-21 Applied Materials, Inc. Substrate processing apparatus and method using the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101289345B1 (ko) 2005-07-19 2013-07-29 주성엔지니어링(주) 섀도우 마스크와 이를 이용한 정렬장치
JP2008007857A (ja) * 2006-06-02 2008-01-17 Sony Corp アライメント装置、アライメント方法および表示装置の製造方法
JP2010086809A (ja) * 2008-09-30 2010-04-15 Canon Anelva Corp 保持装置、マスクのアライメント方法、基板処理装置、電子放出素子ディスプレイの生産方法及び有機ｅｌディスプレイの生産方法
JP6310704B2 (ja) * 2014-01-22 2018-04-11 株式会社アルバック 成膜装置および成膜方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018110953A1 (en) 2016-12-12 2018-06-21 Applied Materials, Inc. Substrate processing apparatus and method using the same

Also Published As

Publication number Publication date
KR20200049034A (ko) 2020-05-08
JP2020070493A (ja) 2020-05-07
CN111118466A (zh) 2020-05-08

Similar Documents

Publication Publication Date Title
JP7288336B2 (ja) アライメントシステム、成膜装置、アライメント方法、成膜方法及び電子デバイスの製造方法
JP7278541B2 (ja) 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
JP7190997B2 (ja) 吸着及びアライメント方法、吸着システム、成膜方法、成膜装置及び電子デバイスの製造方法
KR102505832B1 (ko) 흡착장치, 위치 조정 방법, 및 성막 방법
JP7336867B2 (ja) 吸着システム、成膜装置、吸着方法、成膜方法、及び電子デバイスの製造方法
KR102620156B1 (ko) 밀착도 확인 장치, 밀착도 확인 방법, 및 이를 이용한 성막 장치, 성막 방법, 전자 디바이스의 제조방법
JP2021098883A (ja) 成膜装置、これを用いた成膜方法及び電子デバイスの製造方法
CN112680696A (zh) 成膜装置、电子器件的制造装置、成膜方法及电子器件的制造方法
JP7288756B2 (ja) 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
JP2020070491A (ja) アライメント装置、成膜装置、アライメント方法、成膜方法、及び電子デバイスの製造方法
JP7069280B2 (ja) 成膜装置、成膜方法及び電子デバイスの製造方法
JP7262221B2 (ja) 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
JP7271242B2 (ja) 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
KR102430370B1 (ko) 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
JP2020050952A (ja) 静電チャックシステム、成膜装置、被吸着体分離方法、成膜方法及び電子デバイスの製造方法
JP2020070490A (ja) 吸着及びアライメント方法、吸着システム、成膜方法、成膜装置及び電子デバイスの製造方法
JP2020021927A (ja) 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
JP7224172B2 (ja) 静電チャックシステム、成膜装置、被吸着体分離方法、成膜方法及び電子デバイスの製造方法
JP7162845B2 (ja) 静電チャックシステム、成膜装置、吸着及び分離方法、成膜方法及び電子デバイスの製造方法
CN113088870B (zh) 成膜装置、成膜方法及电子器件的制造方法
CN113005403B (zh) 成膜装置、使用其的成膜方法及电子器件的制造方法
CN113005397B (zh) 成膜装置、成膜方法及电子器件的制造方法
JP7224167B2 (ja) 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
JP2020053662A (ja) 静電チャックシステム、成膜装置、被吸着体分離方法、成膜方法及び電子デバイスの製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220208

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230208

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230516

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230526

R150 Certificate of patent or registration of utility model

Ref document number: 7288336

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150