JP7281901B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

The grinding apparatus of Patent Document 1 includes holding means for holding a plate-like work, first grinding means for roughly grinding the plate-like work held by the holding means, and plate-like work held by the holding means. and second grinding means for performing finish grinding. The first grinding means performs rough grinding to a desired thickness while pressing the upper surface of the plate-shaped work with a whetstone. Similarly, the second grinding means roughly grinds the upper surface of the plate-like workpiece to a desired thickness while pressing the upper surface of the plate-like workpiece with a grindstone.

The thickness of the plate-like workpiece during rough grinding is measured with a contact-type thickness gauge. The thickness measuring gauge includes a first gauge for measuring the height position of the holding surface of the holding means and a second gauge for measuring the height of the upper surface of the plate-like work held by the holding means. The thickness measurement gauge obtains the difference between the measured value of the first gauge and the measured value of the second gauge as the thickness of the plate-shaped work.

The thickness of the plate-like workpiece during finish grinding is measured by a non-contact sensor. A non-contact type sensor irradiates a plate-shaped work with light, and the first reflected light reflected by the upper surface of the plate-shaped work and the second reflected light transmitted through the plate-shaped work and reflected by the lower surface of the plate-shaped work Receive reflected light. The non-contact sensor measures the thickness of the plate-like workpiece based on the difference between the timing of receiving the first reflected light and the timing of receiving the second reflected light.

JP 2014-172131 A

One aspect of the present disclosure provides a technique that can measure the thickness of a chip group during thinning of the chip group substrate.

A substrate processing apparatus according to an aspect of the present disclosure includes
a holding part for holding a substrate with a group of chips, which has a substrate and a chip group including a plurality of chips, the plurality of chips being spaced apart from each other and bonded to a bonding surface of the substrate;
a processing unit that thins the chip group held by the holding unit via the substrate;
During the thinning of the chip group, the exposed portion of the bonding surface of the substrate is irradiated with light and the light reflected by the exposed portion is received, and the processing of thinning the chip group is performed. a measuring unit that measures the thickness of the chip group by irradiating the surface with light and receiving the light reflected by the processing surface of the chip group;
a control unit that controls the processing unit based on the result of the measurement unit ;
The measuring unit measures a first distance from the exposed portion of the bonding surface of the substrate to the measuring unit at a plurality of points on the exposed portion during thinning of the chip group, and measures the first distance. A moving average of the second distance from the machining surface of the chip group to the measuring portion is measured at a plurality of points on the machining surface, a moving average of the second distances is calculated, and the first distance is calculated. A difference between the moving average of the distance and the moving average of the second distance is obtained as the thickness of the chip group .

According to one aspect of the present disclosure, the thickness of the chip group can be measured during thinning of the chip group on the substrate with the chip group.

FIG. 1 is a plan view showing a substrate processing apparatus according to one embodiment. FIG. 2 is a side view showing a processing portion according to one embodiment. FIG. 3 is a plan view showing the relationship between the chip group-attached substrate and the trajectory of the grindstone according to the embodiment. FIG. 4 is a side view showing a substrate with chip groups and a measuring section according to one embodiment. FIG. 5 is a plan view showing measurement points for measuring the thickness of the chip group according to one embodiment. FIG. 6 is a diagram showing temporal changes in the first distance L1 and the second distance L2 during the primary machining according to one embodiment. FIG. 7 is an enlarged view of region VII in FIG. FIG. 8 is a flowchart illustrating a substrate processing method according to one embodiment. FIG. 9 is a flowchart showing control of primary machining according to one embodiment. FIG. 10 is a diagram showing temporal changes in the first distance L1 and the second distance L2 during the primary machining according to the modification. FIG. 11 is a flowchart showing control of primary machining according to the modification.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, in each drawing, the same or corresponding configurations are denoted by the same or corresponding reference numerals, and description thereof may be omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other. The X-axis direction and Y-axis direction are horizontal directions, and the Z-axis direction is vertical direction.

FIG. 1 is a plan view showing a substrate processing apparatus according to one embodiment. The substrate processing apparatus 10 thins the substrate 100 with chip groups. The substrate 100 with chip groups is a so-called chip on wafer (COW: Chip On Wafer).

The substrate with chip group 100 has a substrate 110 and a chip group 120, as shown in FIG. Chip group 120 has a plurality of chips 121 . The plurality of chips 121 are bonded to the bonding surface 115 of the substrate 110 at intervals from each other. The bonding surface 115 of the substrate 110 has a covered portion 116 covered with the chip 121 and an exposed portion 117 not covered with the chip 121 .

The substrate processing apparatus 10 thins the chip groups 120 of the substrate 100 with chip groups without thinning the substrate 110 of the substrate 100 with chip groups. The chip group 120 has a working surface 125 with which the tool 4 for thinning the chip group 120 contacts. A groove 127 is formed in the machined surface 125 . A groove 127 is formed between the plurality of chips 121 . A plurality of chips 121 are arranged in a matrix on the bonding surface 115 of the substrate 110, for example.

The substrate processing apparatus 10 includes, for example, a rotary table 20, four substrate chucks 30A, 30B, 30C and 30D, and three processing units 40A, 40B and 40C, as shown in FIG. In addition, the number of the processed parts 40 should just be one or more, and is not limited to three. Moreover, the number of substrate chucks 30 is not limited to four as long as it is greater than the number of processing units 40 .

The rotary table 20 is rotated around a rotation center line 20Z. A rotation center line 20Z of the turntable 20 is arranged vertically, for example. Around the rotation center line 20Z of the rotary table 20, four substrate chucks 30A, 30B, 30C, and 30D are arranged at regular intervals. Each of the four substrate chucks 30A, 30B, 30C, and 30D rotates together with the rotary table 20, and operates at a loading/unloading position A0, a first processing position A1, a second processing position A2, and a third processing position A3. , and the loading/unloading position A0 in this order.

The loading/unloading position A0 serves both as a loading position where the substrate with chip groups 100 is loaded and an unloading position where the substrate with chip groups 100 is loaded. Loading of the substrate with chip groups 100 and unloading of the substrate with chip groups 100 are performed by the transfer robot 3 . In this embodiment, the carry-in position and the carry-out position are the same position, but the carry-in position and the carry-out position may be different positions.

The transport robot 3 places the chip group-attached substrate 100 on the substrate chuck 30, for example, with the processing surface 125 of the chip group 120 facing upward. The substrate chuck 30 holds the chip group 120 via the substrate 110 .

The first processing position A1 is a processing position where the chip group 120 is thinned. The chip group 120 is thinned by the first processing portion 40A at the first processing position A1. This thinning is the primary process. The primary processing is grinding, for example.

The second processing position A2 is a processing position where further thinning of the chip group 120 thinned at the first processing position A1 is performed. The chip group 120 is thinned by the second processing portion 40B at the second processing position A2. This thinning is a secondary process. Secondary processing is, for example, grinding. The grain size of the grindstone used in the secondary processing is smaller than the grain size of the grindstone used in the primary processing.

The third processing position A3 is a processing position where further thinning of the chip group 120 thinned at the second processing position A2 is performed. The chip group 120 is thinned by the third processing portion 40C at the third processing position A3. This thinning is a tertiary process. Tertiary processing may be either grinding or polishing. The grain size of the grindstone used in the tertiary processing is smaller than the grain size of the grindstone used in the secondary processing.

The four substrate chucks 30A, 30B, 30C, and 30D are attached to the rotary table 20 so as to be rotatable around their respective rotation centerlines 30Z (see FIG. 2).

FIG. 2 is a side view showing a processing portion according to one embodiment. The processing unit 40 thins the chip group 120 . The processing unit 40 includes a movable unit 41 to which the tool 4 is replaceably mounted, and a movement driving unit 50 that moves the movable unit 41 in a direction parallel to the rotation center line 20Z of the rotary table 20 (for example, the Z-axis direction). Prepare.

The tool 4 contacts the chip group 120 and thins the chip group 120 . For example, the tool 4 includes a disk-shaped wheel 5 and a grindstone 6 fixed to the surface of the wheel 5 facing the substrate chuck 30 (for example, the lower surface of the wheel 5). A plurality of grindstones 6 are arranged in a ring shape on the outer peripheral portion of the lower surface of the wheel 5 .

FIG. 3 is a plan view showing the relationship between the chip group-attached substrate and the trajectory of the grindstone according to the embodiment. As shown in FIG. 3 , the orbit 7 of the plurality of grindstones 6 arranged in a ring shape is set so as to pass through the center 126 of the machining surface 125 of the chip group 120 . Also, the chip group-attached substrate 100 is attracted to the substrate chuck 30 so that the center 126 of the processing surface 125 of the chip group 120 passes through the rotation center line 30 Z of the substrate chuck 30 . The entire processing surface 125 of the chip group 120 is processed by the grindstone 6 by rotating the substrate 100 with the chip group together with the substrate chuck 30 about the rotation center line 30Z of the substrate chuck 30 .

In addition, in the present embodiment, a plurality of grindstones 6 are arranged in a ring shape on the outer peripheral portion of the lower surface of the wheel 5, but the technology of the present disclosure is not limited to this. A grindstone 6 may be fixed to the entire lower surface of the wheel 5 .

For example, as shown in FIG. 2, the movable portion 41 includes a flange 42 to which the tool 4 is replaceably mounted, a spindle shaft 43 having the flange 42 at its end, and bearings for rotatably supporting the spindle shaft 43. 45 and a spindle motor 46 for rotating the spindle shaft 43 . The spindle motor 46 rotates the flange 42 and the tool 4 by rotating the spindle shaft 43 . The rotation centerline 43Z of the spindle shaft 43 is parallel to the rotation centerline 20Z of the turntable 20, and arranged vertically, for example.

The movement driving section 50 moves the movable section 41 in a direction parallel to the rotation center line 20Z of the rotary table 20 (for example, the Z-axis direction). The movement drive unit 50 has a guide 51 extending in the Z-axis direction, a slider 52 that moves along the guide 51, and a motor 53 that moves the slider 52. As shown in FIG. The movable portion 41 is fixed to the slider 52 . The motor 53 may be a rotary motion or a linear motion. When the motor 53 performs rotary motion, the movement drive unit 50 has a ball screw that converts the rotary motion of the motor 53 into linear motion of the slider 52 .

The movement driving section 50 lowers the tool 4 attached to the movable section 41 by lowering the movable section 41 . The tool 4 descends while rotating. While the tool 4 descends while rotating, the substrate chuck 30 is rotated, and the substrate 100 with chip groups is rotated together with the substrate chuck 30 . The tool 4 descends while rotating, contacts the chip group 120 and thins the chip group 120 . When the thickness of the chip group 120 reaches the set value, the movement driving section 50 stops lowering the movable section 41 and stops lowering the tool 4 . At this time, the rotation of the tool 4 continues without being stopped. After that, the movement driving section 50 separates the tool 4 from the chip group 120 by raising the movable section 41 .

FIG. 4 is a side view showing a substrate with chip groups and a measuring section according to one embodiment. The substrate processing apparatus 10 has a measuring section 60 that measures the thickness of the chip group 120 . The measurement unit 60 is, for example, a confocal laser displacement meter. A confocal laser displacement meter irradiates a measurement point P with white light having a plurality of wavelength components. The focal position of white light differs for each wavelength. Of the white light, wavelength components whose focal position matches the measurement point P are reflected more strongly at the measurement point P than other wavelength components. A confocal laser displacement meter measures the distance to the measurement point P by receiving reflected light reflected at the measurement point P. FIG.

Although the measurement unit 60 is a confocal laser displacement meter in the present embodiment, the technology of the present disclosure is not limited to this. The measurement method of the laser displacement meter may be, for example, a confocal method, a triangulation method, a time-of-flight method, or an interference method. Regardless of the measurement method of the laser displacement meter, the laser displacement meter measures the distance to the measurement point P by irradiating the measurement point P with a laser beam and receiving the light reflected by the measurement point P.

Chip group 120 includes a plurality of chips 121 . Chip group 120 includes one chip 121A and another chip 121B. The one chip 121A and the other one chip 121B are bonded to the bonding surface 115 of the substrate 110 with a space therebetween. One chip 121A and another chip 121B have different laminated structures.

One chip 121A has a substrate 122A such as a silicon wafer and a film 123A formed on the substrate 122A. Film 123A has at least one of an insulating film, a conductive film, and a semiconductor film. The film 123A may have a single-layer structure or a multi-layer structure. Substrate 122A is thinned without thinning film 123A. Membrane 123A and substrate 110 are bonded such that membrane 123A is positioned between substrate 122A and substrate 110 . These joint surfaces are subjected to surface activation treatment such as plasma treatment and hydrophilic treatment before joining. Note that the chip 121A may have bumps between the film 123A and the substrate 110, and the bumps and the substrate 110 may be bonded.

Another chip 121B has a substrate 122B such as a silicon wafer and a film 123B formed on the substrate 122B. Film 123B has at least one of an insulating film, a conductive film, and a semiconductor film. The film 123B may have a single-layer structure or a multi-layer structure. Substrate 122B is thinned without thinning film 123B. Membrane 123B and substrate 110 are bonded such that membrane 123B is positioned between substrate 122B and substrate 110 . These joint surfaces are subjected to surface activation treatment such as plasma treatment and hydrophilic treatment before joining. Note that the chip 121B may have bumps between the film 123B and the substrate 110, and the bumps and the substrate 110 may be bonded.

One chip 121A and another chip 121B have different laminated structures. For example, the thickness T1 of the one film 123A and the thickness T2 of the other film 123B are different. Also, the thickness T3 of the one substrate 122A after thinning differs from the thickness T4 of the other one substrate 122B after thinning. The thickness (T1+T3) of one chip 121A after thinning is the same as the thickness (T2+T4) of another chip 121B after thinning.

By the way, during the thinning of the chip group 120, the thicknesses T3 and T4 of the substrates 122A and 122B to be thinned are measured by the non-contact sensor described in Patent Document 1 above. Thickness cannot be measured. This is because these thicknesses T3 and T4 are different, so even if these thicknesses T3 and T4 are measured, the thickness of the chip group 120 is unknown.

Moreover, it is difficult to measure the thickness of the chip group 120 with the contact-type gauge described in Patent Document 1 while the chip group 120 is being thinned. This is because the contact-type gauge is pressed against the machining surface 125 of the chip group 120 , and thus gets stuck in the groove 127 of the machining surface 125 .

Therefore, during the thinning of the chip group 120, the measurement unit 60 irradiates the exposed portion 117 of the bonding surface 115 of the substrate 110 with light and receives the light reflected by the exposed portion 117. A first distance L1 to the bonding surface 115 of the substrate 110 is measured. The first distance L1 does not change with thinning.

In addition, while the chip group 120 is being thinned, the measurement unit 60 irradiates the processing surface 125 of the chip group 120 with light and receives the light reflected by the processing surface 125 of the chip group 120 . to the machining surface 125 of the chip group 120 is measured. The second distance L2 is smaller than the first distance L1 and gradually increases due to thinning.

Measurement unit 60 obtains the difference ΔL (ΔL=L1−L2) between first distance L1 and second distance L2 as the thickness of chip group 120 . When the machining surface 125 of the chip group 120 is displaced downward by the contact pressure with the tool 4, the bonding surface 115 of the substrate 110 is pushed by the chip group 120 and displaced downward. Both the first distance L1 and the second distance L2 vary to the same extent with the contact pressure between the tool 4 and the chip group 120 . Therefore, the measurement error of the thickness of the chip group 120 can be reduced compared to the case where only the second distance L2 is managed as a parameter representing the thickness of the chip group 120. FIG.

As described above, the measurement unit 60 irradiates the exposed portion 117 of the bonding surface 115 of the substrate 110 with light and receives the reflected light, and also irradiates the processed surface 125 of the chip group 120 with light and Since the reflected light is received, the thickness of the chip group 120 can be measured. Moreover, since the measuring unit 60 is of a non-contact type that does not come into contact with the processing surface 125 of the chip group 120 , it is possible to avoid fitting into the groove 127 of the processing surface 125 .

FIG. 5 is a plan view showing measurement points for measuring the thickness of the chip group according to one embodiment. Although the plurality of chips 121 shown in FIG. 5 have the same outer dimensions and the same outer shape, they may have different outer dimensions or different outer shapes. It is sufficient that one chip 121A and another chip 121B have different laminated structures. The outer shape of each chip 121 may not be rectangular in plan view, but may be circular in plan view, for example. Also, the plurality of chips 121 shown in FIG. 5 are arranged at regular intervals, but may be arranged at irregular intervals.

The measurement unit 60 measures the thickness of the chip group 120 while the chip group 120 is being thinned. During the thinning of chip group 120 , chip group 120 rotates with substrate chuck 30 . The measurement unit 60 is arranged at a constant distance from the rotation center line 30Z of the substrate chuck 30, as shown in FIG.

A plurality of measurement points P for measuring the thickness of the chip group 120 are arranged at intervals on the same circle centered on the rotation center line 30Z of the substrate chuck 30, as shown in FIG. The position of the measurement point P is determined according to the rotational speed of the substrate chuck 30, the arrangement of the plurality of chips 121, and the like. The position of the measurement point P is determined, for example, so that the first distance L1 and the second distance L2 are each measured once or more during one rotation of the substrate chuck 30 .

Although the number of measurement points P is 24 in FIG. 5, it is not limited to 24. Also, the pitch of the measurement points P is a uniform pitch in FIG. 5, but may be a non-uniform pitch. 5, the position of the measurement point P returns to the same position each time the substrate chuck 30 rotates 360°. good.

Also, although the number of measurement units 60 is one in the present embodiment, it may be plural. When the number of measurement units 60 is plural, one measurement unit 60 may measure only the first distance L1 and the other measurement unit 60 may measure only the second distance L2. When the number of measuring units 60 is plural, one measuring unit 60 and another measuring unit 60 may be arranged at the same distance from the rotation center line 30Z of the substrate chuck 30, or may be arranged at different distances. may be placed at a distance.

Furthermore, although the position of the measuring unit 60 is fixed at a constant distance from the rotation center line 30Z of the substrate chuck 30 in this embodiment, it can be moved so that the distance from the rotation center line 30Z of the substrate chuck 30 changes. good. The thickness of the chip group 120 can be measured at a plurality of measurement points P having different distances from the rotation center line 30Z of the substrate chuck 30, and the thickness distribution of the chip group 120 in the direction orthogonal to the rotation center line 30Z of the substrate chuck 30. can be measured. In order to measure this distribution, one measurement unit 60 and another measurement unit 60 may be arranged at different distances from the rotation centerline 30Z of the substrate chuck 30 .

FIG. 6 is a diagram showing temporal changes in the first distance L1 and the second distance L2 during the primary machining according to one embodiment. In FIG. 6, t0 is the start time of descent of the movable part 41, t1 is the start time of contact between the tool 4 and the chip group 120, and t2 is the end time of descent of the movable part 41. In FIG. FIG. 7 is an enlarged view of region VII in FIG. FIG. 6 shows changes over time between the first distance L1 and the second distance L2 during secondary machining, and changes over time between the first distance L1 and the second distance L2 during tertiary machining. The illustration is omitted because it is the same as the time change of the first distance L1 and the second distance L2 during the primary machining.

At time t0, the movement drive unit 50 starts lowering the movable unit 41 and starts lowering the tool 4 attached to the movable unit 41 . The tool 4 rotates while rotating. While the tool 4 descends while rotating, the substrate chuck 30 is rotated, and the substrate 100 with chip groups is rotated together with the substrate chuck 30 . The first distance L1 and the second distance L2 (L2<L1) are constant because the chip group 120 is not thinned until the tool 4 contacts the chip group 120 . Since the chip group 120 is not thinned until the tool 4 comes into contact with the chip group 120, the thickness ΔL (ΔL=L1−L2) of the chip group 120 is also constant.

The tool 4 descends while rotating, and contacts the chip group 120 at time t1. Subsequently, the tool 4 descends while rotating to thin the chip group 120 . During the thinning of the chip group 120, the first distance L1 slightly fluctuates due to changes in the contact pressure between the chip group 120 and the tool 4, mechanical vibration, or the like. Since the measurement unit 60 obtains the difference ΔL (ΔL=L1−L2) between the first distance L1 and the second distance L2 as the thickness of the chip group 120 while monitoring the variation of the first distance L1, The thickness of the chip group 120 can be accurately measured.

During thinning of the chip group 120, the first distance L1 varies slightly, while the second distance L2 gradually increases. The thickness ΔL (ΔL=L1−L2) of the chip group 120 gradually decreases. Thickness ΔL of chip group 120 reaches set value ΔL0 at time t2. At time t<b>2 , the movement driving section 50 stops lowering the movable section 41 and stops lowering the tool 4 . Note that the rotation of the tool 4 is not stopped at time t2. After that, the movement driving section 50 separates the tool 4 from the chip group 120 by raising the movable section 41 .

As shown in FIG. 1 , the substrate processing apparatus 10 has a control section 90 . The control unit 90 is configured by, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 10 . The control unit 90 controls the operation of the substrate processing apparatus 10 by causing the CPU 91 to execute programs stored in the storage medium 92 . The control unit 90 also includes an input interface 93 and an output interface 94 . The control unit 90 receives signals from the outside via an input interface 93 and transmits signals to the outside via an output interface 94 .

Such a program may have been stored in a computer-readable storage medium and installed in the storage medium 92 of the controller 90 from the storage medium. Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards. Note that the program may be downloaded from a server via the Internet and installed in the storage medium 92 of the control unit 90 .

The control section 90 controls the processing section 40 based on the measurement result of the measurement section 60 . A measuring unit 60 is provided for each processing unit 40 . The first measurement unit 60A measures the thickness ΔL at the first processing position A1. The second measuring section 60B measures the thickness ΔL at the second processing position A2. The third measurement unit 60C measures the thickness ΔL at the third processing position A3.

The control unit 90 controls the first processing unit 40A based on the measurement result of the first measurement unit 60A. Also, the control unit 90 controls the second processing unit 40B based on the measurement result of the second measurement unit 60B. Further, the control section 90 controls the third processing section 40C based on the measurement result of the third measuring section 60C.

Note that although the measurement unit 60 is provided for each processing unit 40 in the present embodiment, the technology of the present disclosure is not limited to this. For example, a common measurement unit 60 may be provided for a plurality of processing units 40 . A moving mechanism that moves the measuring unit 60 between the plurality of processing units 40 may be provided.

FIG. 8 is a flowchart illustrating a substrate processing method according to one embodiment. The process shown in FIG. 8 is a process for processing the substrate 100 with chip groups held by one substrate chuck 30A. Processing steps of the chip group-attached substrate 100 held by the other substrate chucks 30B, 30C, and 30D are the same as the steps shown in FIG. 8, so illustration thereof is omitted. Steps S101 to S105 shown in FIG. 8 are repeatedly performed under the control of the control unit 90 by replacing the substrate 100 with chip groups. The process of processing the substrate with chip groups 100 held by one substrate chuck 30A and the process of processing the substrate with chip groups 100 held by the other substrate chucks 30B, 30C, and 30D are performed in parallel.

The substrate processing method has a step S101 of loading the substrate 100 with the chip group into the substrate chuck 30A. The substrate chuck 30A receives the chip group-attached substrate 100 from the transfer robot 3 and sucks the chip group-attached substrate 100 at the loading/unloading position A0. Thereafter, the substrate chuck 30A rotates together with the rotary table 20 to move from the loading/unloading position A0 to the first processing position A1.

The substrate processing method has a step S102 of primarily processing the chip group 120 . The primary processing of the chip group 120 is performed by the first processing section 40A at the first processing position A1. At the first processing position A1, thinning of the chip group 120 is performed until the thickness ΔL of the chip group 120 reaches the first set value ΔL01. After that, the substrate chuck 30A rotates together with the rotary table 20 to move from the first processing position A1 to the second processing position A2.

The substrate processing method has step S103 of secondary processing of the chip group 120 . The secondary processing of the chip group 120 is performed by the second processing section 40B at the second processing position A2. At the second processing position A2, the chip group 120 is thinned until the thickness ΔL of the chip group 120 reaches the second set value ΔL02. The second set value ΔL02 is smaller than the first set value ΔL01. Thereafter, the substrate chuck 30A rotates together with the rotary table 20 to move from the second processing position A2 to the third processing position A3.

The substrate processing method has a step S104 of tertiary processing of the chip group 120 . The tertiary machining of the chip group 120 is performed by the third machining section 40C at the third machining position A3. At the third processing position A3, thinning of the chip group 120 is performed until the thickness ΔL of the chip group 120 reaches the third set value ΔL03. The third set value ΔL03 is smaller than the second set value ΔL02. After that, the substrate chuck 30A rotates together with the rotary table 20 to move from the third processing position A3 to the loading/unloading position A0.

The substrate processing method includes step S105 of unloading the substrate 100 with the chip groups from the substrate chuck 30A. The substrate chuck 30A releases the substrate 100 with chip groups at the loading/unloading position A0, and then transfers the substrate 100 with chip groups to the transport robot 3. As shown in FIG. The transport robot 3 carries out the received chip group-attached substrate 100 .

FIG. 9 is a flowchart showing control of primary machining according to one embodiment. Steps S201 to S203 shown in FIG. 9 are repeated under the control of the control unit 90 by replacing the substrate 100 with chip groups. Note that the control of the secondary machining and the control of the tertiary machining are the same as the control of the primary machining shown in FIG. 9, so illustration thereof is omitted.

The primary machining method includes, for example, a step S201 in which the tool 4 is rotated and lowered by the machining unit 40 until the thickness ΔL of the chip group 120 measured by the measuring unit 60 reaches the set value ΔL0. The tool 4 descends while rotating to contact the chip group 120 and thin the chip group 120 .

Here, the thickness ΔL of the chip group 120 is obtained as the difference ΔL (ΔL=L1−L2) between the first distance L1 and the second distance L2. The first distance L1 is obtained, for example, as a moving average of measured values measured at a plurality of measurement points P on the exposed portion 117 of the bonding surface 115 of the substrate 110 . Similarly, the second distance L2 is obtained as a moving average of measured values measured at a plurality of measurement points P on the machining surface 125 of the chip group 120 .

A moving average is an average value of a preset length of time period. The moving average may be a simple moving average, a weighted moving average, an exponential moving average, or the like. By adopting the moving average, it is possible to suppress fluctuations in ΔL due to measurement errors of L1 and L2, etc., compared to the case of adopting individual values.

The primary machining method has a step S202 of stopping the descent of the tool 4 when ΔL reaches ΔL01. In this step S202, the downward movement of the tool 4 is stopped and the rotation of the tool 4 is continued without stopping. This is because if the rotation of the tool 4 is stopped while the tool 4 is in contact with the chip group 120, the chip group 120 may be damaged.

The primary machining method has step S203 of raising the tool 4 . According to the present embodiment, the tool 4 is rotated and lowered by the processing unit 40 until the thickness ΔL of the chip group 120 measured by the measuring unit 60 reaches the set value ΔL0. can be thinned to the set value ΔL0.

FIG. 10 is a diagram showing temporal changes in the first distance L1 and the second distance L2 during the primary machining according to the modification. The time period shown in FIG. 10 is part of the time period from the contact start time t1 between the tool 4 and the tip group 120 to the descent end time t2 of the movable portion 41 . FIG. 11 is a flowchart showing control of primary machining according to the modification. Steps S301 and S302 shown in FIG. 11 are repeatedly performed under the control of the control unit 90 from the contact start time t1 between the tool 4 and the chip group 120 to the lowering end time t2 of the movable unit 41. Note that the control of the secondary machining and the control of the tertiary machining are the same as the control of the primary machining shown in FIG. 11, so illustration thereof is omitted.

The primary machining method includes, for example, a step S301 of measuring the displacement of the machining surface 125 of the chip group 120 by the measuring unit 60 . The displacement of the machining surface 125 of the chip group 120 is obtained as the time change of the second distance L2. As the thinning of the chip group 120 progresses, the processing surface 125 of the chip group 120 moves away from the measuring section 60, so the second distance L2 increases.

The primary machining method has a step S302 of determining whether or not the chip group 120 is damaged based on the displacement of the machining surface 125 of the chip group 120 . When the chip group 120 breaks due to contact with the tool 4, the machining surface 125 of the chip group 120 is separated from the measuring unit 60, so the second distance L2 increases instantaneously.

Whether or not the chip group 120 is damaged is determined, for example, based on whether the speed at which the second distance L2 increases is greater than a threshold. The threshold is set based on the lowering speed of the tool 4 and the like. For example, at time t3 shown in FIG. 10, the speed at which the second distance L2 increases is higher than the lowering speed of the tool 4 and higher than the threshold.

When the control unit 90 determines that the chip group 120 is not damaged, it continues the primary machining. On the other hand, when the controller 90 determines that the chip group 120 is damaged, it stops the primary machining and raises the tool 4 .

Note that, when the control unit 90 determines that the chip group 120 is damaged, the primary machining may be continued without stopping the primary machining. Even if some of the chips 121 are damaged, if most of the chips 121 are not damaged, the control unit 90 may continue the primary machining. In this case, the fact that some of the chips 121 are damaged is stored in the storage medium 92 .

Although the embodiments of the substrate processing apparatus and the substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also naturally belong to the technical scope of the present disclosure.

The substrates 110 and 122 are not limited to semiconductor substrates such as silicon wafers, and may be glass substrates or the like.

The thinning of the chip group 120 is realized by the grindstone 6, but may be realized by laser beam irradiation. The laser beam forms an altered layer inside the substrate 122 that constitutes the chip group 120 . A plurality of deteriorated layers are formed in parallel with the processing surface 125 of the chip group 120 at intervals. By dividing the substrate 122 along multiple altered layers, the chip group 120 can be thinned.

10 substrate processing apparatus 30 substrate chuck (holding unit)
40 processing unit 90 control unit 100 substrate with chip group 110 substrate 115 bonding surface 117 exposed portion 120 chip group 121 chip 122 substrate 123 film 125 processing surface

Claims (12)

a holding part for holding a substrate with a group of chips, which has a substrate and a chip group including a plurality of chips, the plurality of chips being spaced apart from each other and bonded to a bonding surface of the substrate;
a processing unit for thinning the chip group held by the holding unit via the substrate;
During the thinning of the chip group, the exposed portion of the bonding surface of the substrate is irradiated with light and the light reflected by the exposed portion is received, and the processing of thinning the chip group is performed. a measuring unit that measures the thickness of the chip group by irradiating the surface with light and receiving the light reflected by the processing surface of the chip group;
a control unit that controls the processing unit based on the result of the measurement unit ;
The measuring unit measures a first distance from the exposed portion of the bonding surface of the substrate to the measuring unit at a plurality of points on the exposed portion during thinning of the chip group, and measures the first distance. A moving average of the second distance from the machining surface of the chip group to the measuring portion is measured at a plurality of points on the machining surface, a moving average of the second distances is calculated, and the first distance is calculated. A substrate processing apparatus , wherein a difference between a moving average of distances and the second moving average of distances is obtained as the thickness of the chip group . The holding part is configured to be rotatable about a rotation center line,
2. The substrate processing apparatus according to claim 1, wherein said first distance measurement point and said second distance measurement point are determined according to the rotational speed of said holder and the arrangement of said plurality of chips. The measurement unit measures the difference between the moving average of the first distance and the moving average of the second distance while monitoring the variation of the first distance during the thinning of the chip group. 3. The substrate processing apparatus according to claim 1, wherein the thickness is determined as a thickness of . 4. The control unit according to any one of claims 1 to 3 , wherein the processing unit thins the chip group until the thickness of the chip group measured by the measuring unit reaches a set value. Substrate processing equipment. the measuring unit measures the displacement of the machining surface of the chip group by irradiating the machining surface of the chip group with light and receiving the light reflected by the machining surface of the chip group;
5. The substrate processing apparatus according to claim 1 , wherein said control unit determines whether said chip group is damaged based on the displacement of said machining surface of said chip group. 6. The substrate processing apparatus according to claim 1, wherein said one chip and said other chip have different laminated structures. a step of holding a substrate with a group of chips having a substrate and a group of chips including a plurality of chips, the plurality of chips being spaced apart from each other and bonded to a bonding surface of the substrate with a holding portion;
a step of thinning the chip group held by the holding portion via the substrate;
During the thinning of the chip group, the exposed portion of the bonding surface of the substrate is irradiated with light and the light reflected by the exposed portion is received, and the processing of thinning the chip group is performed. measuring the thickness of the chip group by irradiating the surface with light and receiving the light reflected by the processing surface of the chip group;
The step of thinning the chip group is performed based on the measurement result of the step of measuring the thickness of the chip group ,
A measuring unit for measuring the thickness of the chip group measures a first distance from the exposed portion of the bonding surface of the substrate to the measuring unit at a plurality of points on the exposed portion during thinning of the chip group. and obtaining a moving average of the first distance, measuring a second distance from the machining surface of the chip group to the measuring portion at a plurality of points on the machining surface, and moving the second distance A substrate processing method , wherein an average is obtained, and a difference between the moving average of the first distance and the moving average of the second distance is obtained as the thickness of the chip group. The holding part is configured to be rotatable about a rotation center line,
8. The substrate processing method according to claim 7, wherein the first distance measurement point and the second distance measurement point are determined according to the rotational speed of the holding part and the arrangement of the plurality of chips. The measurement unit measures the difference between the moving average of the first distance and the moving average of the second distance while monitoring the variation of the first distance during the thinning of the chip group. 9. The substrate processing method according to claim 7 or 8, wherein the thickness is determined as a thickness of . 10. The substrate processing method according to claim 7, wherein the step of thinning said chip group is performed until a measured thickness of said chip group reaches a set value. In the step of measuring the thickness of the chip group, by irradiating the processing surface of the chip group with light and receiving the light reflected by the processing surface of the chip group, the thickness of the processing surface of the chip group is measured. including the step of measuring the displacement;
11. The substrate processing method according to any one of claims 7 to 10 , further comprising the step of determining whether or not said chip group is damaged based on the displacement of said machined surface of said chip group. 12. The substrate processing method according to claim 7 , wherein said one chip and said other chip have different laminated structures.

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