CN114267606B - Wafer height detection method and device - Google Patents
Wafer height detection method and device Download PDFInfo
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- CN114267606B CN114267606B CN202210191894.1A CN202210191894A CN114267606B CN 114267606 B CN114267606 B CN 114267606B CN 202210191894 A CN202210191894 A CN 202210191894A CN 114267606 B CN114267606 B CN 114267606B
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Abstract
The invention discloses a wafer height detection method and a wafer height detection device. The method comprises the following steps: acquiring a wafer surface sampling point data set under a three-dimensional coordinate system; converting the sampling point data set into a picture under a two-dimensional coordinate system, wherein the picture comprises distance information from the sampling points to a reference plane; searching a target crystal grain on the picture according to the distance information from the sampling point to the reference plane, and taking a preset area around the target crystal grain as a crystal grain base corresponding to the target crystal grain; and calculating to obtain the height value of the target crystal grain according to the distance information from the sampling point corresponding to the target crystal grain to the reference plane and the distance information from the sampling point corresponding to the crystal grain base to the reference plane. The invention has the advantages of high detection speed and high detection precision.
Description
Technical Field
The invention belongs to the technical field of wafer detection, and particularly relates to a wafer height detection method and device.
Background
In wafer production, a microscope camera is used for detection, but the depth of field of the microscope lens is small, so that the distance from the lens to the surface of the wafer needs to be controlled accurately. But in practice the wafer is warped, i.e. the surfaces of the wafer at different positions are not in the same horizontal plane. This creates great difficulty in focusing the camera. Meanwhile, due to the timeliness, focusing operation cannot be performed on each camera position by using an automatic focusing method, so that the heights of all positions of the wafer need to be measured quickly. In the prior art, there are two main schemes for detecting the focusing height of a camera in wafer inspection.
The first scheme is as follows: and a laser ranging probe is added in the measurement process, and then the height of the camera is adjusted in real time according to the distance returned by the probe. However, this method has the following problems: 1) the camera needs a certain time to adjust the height, and when the laser probe scans the height data, the adjustment is often not in time, so that the image is not adjusted to the optimal position; 2) the measured value of the laser probe is inaccurate in the movement process, and the measurement time at the same position is not enough, so that the height deviation is very large; 3) the measurement precision of the laser probe is not enough, the height of the wafer is in a micron level, and the measurement data can be invalid due to one or two microns of deviation.
Scheme two is as follows: sampling some point locations on the wafer, moving the camera to the corresponding point locations, manually focusing, recording height data of the sampled point locations, fitting a wafer height plane, and adjusting the height of the camera. However, this method has the following problems: 1) the height of each die on the wafer is concerned, not the height of the wafer pedestal, and the point sampled by the method cannot represent the height of the die; 2) the warp data is different for different wafers, and this approach is directed to single wafer rather than global product categories; 3) it is not guaranteed that the height of the wafer can conform to the fitted curve.
Disclosure of Invention
In view of at least one of the defects or improvement requirements of the prior art, the invention provides a wafer height detection method and a wafer height detection device, which have the advantages of high detection speed and high detection precision.
To achieve the above object, according to a first aspect of the present invention, there is provided a wafer height detecting method comprising:
acquiring a wafer surface sampling point data set under a three-dimensional coordinate system;
converting the sampling point data set into a picture under a two-dimensional coordinate system, wherein the picture comprises distance information from the sampling points to a reference plane;
searching a target crystal grain on the picture according to the distance information from the sampling point to the reference plane, and taking a preset area around the target crystal grain as a crystal grain base corresponding to the target crystal grain;
and calculating to obtain the height value of the target crystal grain according to the distance information from the sampling point corresponding to the target crystal grain to the reference plane and the distance information from the sampling point corresponding to the crystal grain base to the reference plane.
Further, the converting the sample point data set into a picture in a two-dimensional coordinate system includes:
respectively acquiring a plurality of local sampling point data sets on the surface of the wafer, converting each local sampling point data set into a picture under a two-dimensional coordinate system, and splicing each local picture to obtain the picture of the whole surface of the wafer under the two-dimensional coordinate system.
Further, a three-dimensional camera utilizing a spectrum confocal principle is adopted to acquire a wafer surface sampling point data set.
Further, the finding the target grain includes:
traversing all sampling points in the picture, and if the distance value of a certain sampling point is greater than a first preset threshold value, marking the sampling point;
and taking the marked and gathered sampling points as candidate crystal grain clusters, traversing all the candidate crystal grain clusters, and if the area of a certain candidate crystal grain cluster is larger than a second preset threshold value, taking the candidate crystal grain cluster as a target crystal grain.
Further, the picture is divided into a plurality of blocks, a first preset threshold value of each block is set respectively, and the sampling point of each block is compared with the first preset threshold value of the block when the picture is marked.
Further, the setting the first preset threshold of each block respectively includes:
and obtaining the distance information statistical distribution of each sampling point to which each block belongs, if the statistical distribution comprises two distance peak values, taking the value in the middle range of the two peak values as a first preset threshold value of the block, and if only one distance peak value exists in the statistical distribution, taking the value lower than the peak value as the first preset threshold value of the block.
Further, the calculating to obtain the height value of the target crystal grain comprises:
calculating the distance from the target crystal grain to the reference plane according to the distance of the sampling point corresponding to the target crystal grain;
sampling the sampling points corresponding to the crystal grain base again, and taking the distance median of the sampling points again as the distance from the crystal grain base to the reference plane;
and taking the difference value of the distance from the target crystal grain to the reference plane and the distance from the crystal grain base to the reference plane as the height value of the crystal grain.
Further, the converting the sampling point data set into a picture under a two-dimensional coordinate system includes:
and (3) recording the coordinates of the sampling point in an xyz three-dimensional coordinate system as (x, y, z), determining the position of the sampling point in the picture according to the x value and the y value of the sampling point, and taking the z value as the distance value from the sampling point to the reference plane.
Further, the wafer height detection method further comprises the following steps: and reading the height value of the target crystal grain, and controlling the focal distance from the micro-camera to the surface of the wafer according to the height value of the target crystal grain.
According to a second aspect of the present invention, there is provided a wafer height detecting apparatus comprising:
the acquisition equipment is used for acquiring a wafer surface sampling point data set under a three-dimensional coordinate system;
and the data processing equipment is used for converting the sampling point data set into a picture under a two-dimensional coordinate system, the picture comprises distance information from the sampling point to a reference plane, a target crystal grain is searched on the picture according to the distance information from the sampling point to the reference plane, a preset area around the target crystal grain is used as a crystal grain base corresponding to the target crystal grain, and the height value of the target crystal grain is obtained through calculation according to the distance information from the sampling point corresponding to the target crystal grain to the reference plane and the distance information from the sampling point corresponding to the crystal grain base to the reference plane.
In general, compared with the prior art, the invention has the following beneficial effects:
(1) the wafer surface sampling point data set under the three-dimensional coordinate system is obtained and then converted into the picture comprising the distance information from each point to the reference plane under the two-dimensional coordinate system, the crystal grains and the crystal grain base are searched according to the distance information in the picture, and then the height of the crystal grains is calculated, so that the rapid detection of the heights of the crystal grains on the wafer can be realized, and the wafer surface sampling point data set has the advantages of high detection speed and high detection precision.
(2) The method has the advantages that the pictures of the whole wafer surface under the two-dimensional coordinate system are obtained through the local splicing, so that the whole information of the wafer surface can be obtained by adopting the sensor equipment with a small visual field, the detection accuracy can be further improved, the whole detection of the wafer surface is ensured, and the detection cost is also reduced.
(3) The three-dimensional camera adopting the spectrum confocal principle is used for acquiring the data set of the sampling point on the surface of the wafer, so that the interference of a reflective material on the surface of the wafer or a transparent material in the wafer can be avoided, and the detection precision is ensured.
Drawings
FIG. 1 is a flowchart of a wafer level inspection method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a wafer surface sampling point according to an embodiment of the present invention;
FIG. 3 is a partial schematic view of a wafer picture according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a die according to an embodiment of the present invention;
FIG. 5 is a block diagram of a wafer picture according to an embodiment of the invention;
FIG. 6 is a block diagram of a wafer picture according to an embodiment of the invention;
FIG. 7 is a sample distance histogram statistical representation of an embodiment of the present invention;
FIG. 8 is a sample distance histogram statistical representation of another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, a method for detecting a wafer height according to an embodiment of the present invention includes:
s101, acquiring a wafer surface sampling point data set in a three-dimensional coordinate system.
Fig. 2 is an example of a set of sampling point data on the wafer surface, wherein the black area represents the die area requiring the height detection. In the collected wafer surface sampling point data set, each sampling point data set comprises coordinates (x, y, z) of an xyz coordinate system. The xyz coordinate system may be a coordinate system defined by the acquisition device itself.
A three-dimensional camera (3D camera) using the principle of spectral confocal may be used to acquire a data set of wafer surface sampling points. The wafer has a mirror surface material or a transparent material, so that a light reflecting or light transmitting effect can be generated, a three-dimensional camera based on a spectrum confocal principle is used for acquiring a data set of sampling points on the surface of the wafer, the data set of the sampling points on the surface of the wafer can be accurately acquired, and the accurate detection of the height of the wafer can be ensured.
S102, converting the collected sampling point data set into a picture under a two-dimensional coordinate system, wherein the picture also comprises distance information from the sampling point to a reference plane.
Specifically, the position of each sampling point in the picture is determined according to the x value and the y value of the sampling point, that is, the position of each pixel point in the picture, and a single-channel diagram is adopted to represent the distance value from each sampling point to a reference plane, that is, each sampling point in the picture further includes z value information, and the reference plane may be a plane formed by an xy axis.
The transformation may be implemented using adaptive rasterization. The method specifically comprises the following steps: 1) first, a part of sampling point data is read, and then xy intervals between sampling points, namely sampling periods, are obtained. Then, sequentially reading all sampling point data points, dividing xy coordinates of the sampling point data points by intervals respectively to obtain which row and column each sampling point belongs to, and recording; 2) after reading all the sampling points, recording the maximum and minimum rows and columns, namely knowing the xy coordinate range of the point cloud, and generating a blank two-dimensional matrix, wherein the rows and columns are consistent with the range obtained previously; 3) and then filling the height of the z axis of the sampling point into the corresponding matrix point by point to obtain a picture under a two-dimensional coordinate system.
Furthermore, a plurality of local sampling point data sets on the surface of the wafer can be respectively obtained, each local sampling point data set is converted into a picture under a two-dimensional coordinate system, and then each local picture is spliced to obtain the picture of the whole surface of the wafer under the two-dimensional coordinate system. Alternative approaches are also possible, such as stitching the sample point data sets first and then converting, but this approach increases the amount of computational data relative to a first conversion and then stitching approach.
As shown in fig. 3, two rectangular boxes represent two locally corresponding single-channel pictures, and a circular box represents a wafer. And determining the overlapping area of the sampling points in the local picture of the wafer, and then aligning the positions according to the overlapping area, thereby synthesizing a large single-channel picture of the whole wafer.
In order to improve the measurement accuracy, the three-dimensional camera with a small field of view is preferably used, and the three-dimensional camera can only acquire a local sampling point data set on the surface of the wafer at one time, and then performs multiple acquisition to acquire a plurality of local sampling point data sets on the surface of the wafer. In one example, a local sample point dataset captured is only approximately 4mm wide, with a wafer diameter as high as around 150 mm. Each graph can only obtain local distance information, and cannot obtain global distance information. Therefore, a jigsaw puzzle mode is adopted to integrate the distance information of a plurality of local parts so as to prepare for the next step. By adopting the mode, the requirement on the sampling width of the 3D camera is reduced, and a large three-dimensional camera can be obtained by splicing small three-dimensional cameras.
S103, searching a target crystal grain on the picture according to the distance information from the sampling point to the reference plane, and taking a preset area around the target crystal grain as a crystal grain base corresponding to the target crystal grain.
Since the focus of the wafer inspection is on the die, and the height of the die needs to be focused, the position of each die must be found according to the picture in the two-dimensional coordinate system. The die tends to be taller than the wafer, based on which a lookup of the die can be made. As shown in fig. 4, the black circle is higher than other parts, i.e. the crystal grain. The position of the die can be found only by finding all the places higher than the surrounding height.
Further, finding the target die and the die pad includes steps S1031 to S1032.
And S1031, traversing all sampling points in the picture, and marking out a certain sampling point if the distance value of the sampling point is greater than a first preset threshold value.
By comparing the distance value of each sampling point with the first preset threshold, all sampling points with the distance values larger than the first preset threshold in the picture can be marked.
Further, the picture is divided into a plurality of blocks, a first preset threshold value of each block is set respectively, and the sampling point of each block is compared with the first preset threshold value of the block when marking.
Because the surface of the wafer may be inclined relative to the reference plane, in this case, the distance difference between the sampling points of different blocks in the converted picture and the reference plane is large, and the distance difference between the crystal grains of different blocks and the reference plane is large. If a uniform first predetermined threshold is used to mark the sampling point, the crystal grain search may be inaccurate. Therefore, the first preset threshold is adaptively set to divide the die and the die pad.
As shown in fig. 5, the whole picture is the whole picture in the converted two-dimensional coordinate system, and the internal frame of the picture is a plurality of blocks divided from the whole picture. And respectively setting a first preset threshold value for each block to divide the crystal grains and the crystal grain bases.
Further, the setting the first preset threshold of each block respectively includes: and obtaining the distance information statistical distribution of the sampling points contained in each block, if the statistical distribution comprises two distance peak values, taking the value in the middle range of the two peak values as a first preset threshold value of the block, if only one distance peak value exists in the statistical distribution, indicating that the block has no crystal grains, and taking the value lower than the peak value as the first preset threshold value of the block.
The blocks of fig. 6 are illustrated as an example. Obtaining the statistical distribution of the distance information of the sampling points included in the block, representing the distance value by the abscissa, and representing the frequency of occurrence of the distance value by the ordinate, if as shown in fig. 7, the statistical distribution includes two peak values of the distance, and taking the value in the middle range of the two peak values as the first preset threshold of the block. The median of the two peaks is preferably taken as the first preset threshold for the block. If there is only one distance peak in the statistical distribution, as shown in fig. 8, the lower value below the peak is taken as the first preset threshold of the block.
And S1032, taking the marked and gathered sampling points as candidate grain clusters, wherein the gathering refers to that the sampling points are adjacent on the graph, traversing all the candidate grain clusters, if the area of a certain candidate grain cluster is larger than a second preset threshold value, regarding the candidate grain cluster as a grain, and taking a preset area around each grain as a base corresponding to the grain. The peripheral predetermined area can be set as a circle of adjacent sampling points around the die.
The second preset threshold is selected according to the actual size of the crystal grain and the magnification of the camera.
And S104, calculating to obtain the height value of the target crystal grain according to the distance information from the sampling point corresponding to the target crystal grain to the reference plane and the distance information from the sampling point corresponding to the crystal grain base to the reference plane.
The difference between the distance from the die to the reference plane and the distance from the die base to the reference plane is the height of the die.
Further, S104 includes the steps of:
(1) calculating the distance from the crystal grain to the reference plane according to the distance of the sampling point corresponding to the crystal grain;
(2) and sampling the sampling points corresponding to the crystal grain base again, and taking the distance median of the sampling points again as the distance from the crystal grain base to the reference plane. As described above, the height of the wafer itself is not uniform in different places, and therefore, the height of the crystal grain cannot be directly obtained by subtracting a certain fixed value from the height of the crystal grain obtained by measurement. It is necessary to sample the pedestal height of the wafer at the periphery of the die and subtract this to obtain the die height value.
(3) And taking the difference of the distance between the crystal grain and the crystal grain base as the height value of the crystal grain.
In some detection scenarios, the die height itself is a detection item, and can be directly applied.
Further, the wafer height detection method further comprises the following steps: and reading the height value of the target crystal grain, and controlling the focal distance from the micro-camera to the surface of the wafer according to the height value of the target crystal grain.
The wafer height detection device of the embodiment of the invention comprises:
the acquisition equipment is used for acquiring a wafer surface sampling point data set under a three-dimensional coordinate system;
and the data processing equipment is used for converting the sampling point data set into a picture under a two-dimensional coordinate system, the picture comprises distance information from the sampling point to a reference plane, a target crystal grain is searched on the picture according to the distance information from the sampling point to the reference plane, a preset area around the target crystal grain is used as a crystal grain base corresponding to the target crystal grain, and the height value of the target crystal grain is obtained by calculation according to the distance information from the sampling point corresponding to the target crystal grain to the reference plane and the distance information from the sampling point corresponding to the crystal grain base to the reference plane.
The implementation principle and technical effect of the device are similar to those of the method, and are not described in detail herein.
It must be noted that in any of the above embodiments, the methods are not necessarily executed in order of sequence number, and as long as it cannot be assumed from the execution logic that they are necessarily executed in a certain order, it means that they can be executed in any other possible order.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. A wafer height detection method is characterized by comprising the following steps:
acquiring a wafer surface sampling point data set under a three-dimensional coordinate system;
converting the sampling point data set into a picture under a two-dimensional coordinate system, wherein the picture comprises distance information from a sampling point to a reference plane, and the reference plane is a plane formed by two coordinate axes of the two-dimensional coordinate system;
searching a target crystal grain on the picture according to the distance information from the sampling point to the reference plane, and taking a preset area around the target crystal grain as a crystal grain base corresponding to the target crystal grain;
calculating to obtain the height value of the target crystal grain according to the distance information from the sampling point corresponding to the target crystal grain to the reference plane and the distance information from the sampling point corresponding to the crystal grain base corresponding to the target crystal grain to the reference plane;
the searching for the target grain comprises:
dividing the picture into a plurality of blocks, respectively setting a first preset threshold value of each block, traversing all sampling points in the picture, respectively comparing the sampling point of each block with the first preset threshold value of the block, and marking out a sampling point if the distance value of the sampling point is greater than the first preset threshold value;
and taking the marked and gathered sampling points as candidate crystal grain clusters, traversing all the candidate crystal grain clusters, and if the area of a certain candidate crystal grain cluster is larger than a second preset threshold value, taking the candidate crystal grain cluster as a target crystal grain.
2. The wafer height detection method of claim 1, wherein said converting the set of sample point data into a picture in a two-dimensional coordinate system comprises:
respectively acquiring a plurality of local sampling point data sets on the surface of the wafer, converting each local sampling point data set into a picture under a two-dimensional coordinate system, and splicing each local picture to obtain the picture of the whole surface of the wafer under the two-dimensional coordinate system.
3. The method as claimed in claim 1, wherein the set of data of the sampling points on the surface of the wafer is obtained by a three-dimensional camera using the principle of confocal spectroscopy.
4. The wafer height detecting method as claimed in claim 1, wherein the setting the first preset threshold for each block respectively comprises:
and obtaining the distance information statistical distribution of the sampling points contained in each block, if the statistical distribution comprises two distance peak values, taking the value in the middle range of the two peak values as a first preset threshold value of the block, and if only one distance peak value exists in the statistical distribution, taking the value lower than the peak value as the first preset threshold value of the block.
5. The method as claimed in claim 1, wherein the calculating the height of the target die comprises:
calculating the distance from the target crystal grain to the reference plane according to the distance of the sampling point corresponding to the target crystal grain;
sampling the sampling points corresponding to the crystal grain base again, and taking the distance median of the sampling points again as the distance from the crystal grain base to the reference plane;
and taking the difference value of the distance from the target crystal grain to the reference plane and the distance from the crystal grain base to the reference plane as the height value of the crystal grain.
6. The wafer height detection method of claim 1, wherein said converting the set of sample point data into a picture in a two-dimensional coordinate system comprises:
and (3) recording the coordinates of the sampling point in an xyz three-dimensional coordinate system as (x, y, z), determining the position of the sampling point in the picture according to the x value and the y value of the sampling point, and taking the z value as the distance value from the sampling point to the reference plane.
7. The wafer height detecting method as claimed in claim 1, further comprising the steps of: and reading the height value of the target crystal grain, and controlling the focal distance from the micro-camera to the surface of the wafer according to the height value of the target crystal grain.
8. A wafer height detecting apparatus, comprising:
the acquisition equipment is used for acquiring a wafer surface sampling point data set under a three-dimensional coordinate system;
the data processing equipment is used for converting the sampling point data set into a picture under a two-dimensional coordinate system, the picture comprises distance information from the sampling point to a reference plane, the reference plane is a plane formed by two coordinate axes of the two-dimensional coordinate system, a target crystal grain is searched on the picture according to the distance information from the sampling point to the reference plane, a preset area around the target crystal grain is used as a crystal grain base corresponding to the target crystal grain, and the height value of the target crystal grain is calculated according to the distance information from the sampling point corresponding to the target crystal grain to the reference plane and the distance information from the sampling point corresponding to the crystal grain base corresponding to the target crystal grain to the reference plane;
the searching for the target grain comprises:
dividing the picture into a plurality of blocks, respectively setting a first preset threshold value of each block, traversing all sampling points in the picture, respectively comparing the sampling point of each block with the first preset threshold value of the block, and marking out a sampling point if the distance value of the sampling point is greater than the first preset threshold value;
and taking the marked and gathered sampling points as candidate crystal grain clusters, traversing all the candidate crystal grain clusters, and if the area of a certain candidate crystal grain cluster is greater than a second preset threshold value, taking the candidate crystal grain cluster as a target crystal grain.
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| CN114037659A (en) * | 2021-10-13 | 2022-02-11 | 武汉精创电子技术有限公司 | Method, device and equipment for detecting crystal grain array defects and readable storage medium |
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