CN101202236A - Method for measuring chip step height adopting OCD - Google Patents
Method for measuring chip step height adopting OCD Download PDFInfo
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- CN101202236A CN101202236A CNA2006101473953A CN200610147395A CN101202236A CN 101202236 A CN101202236 A CN 101202236A CN A2006101473953 A CNA2006101473953 A CN A2006101473953A CN 200610147395 A CN200610147395 A CN 200610147395A CN 101202236 A CN101202236 A CN 101202236A
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- measuring chip
- shoulder height
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Abstract
The invention provides a method for measuring the heights of chip steps by adopting OCD (measurement of optical character sizes) and comprises the following steps: a. height parameters of filling dielectrics and chip basements are obtained from spectral lines b. the heights of the steps are obtained by calculating the difference values of the height parameters of the filling dielectrics and the chip basements. Compared with the prior art, by adopting the OCD, the invention measures the steps with higher efficiency and less cost; two different dielectrics are measured at the same time and the difference values are output without causing damage to the chip surfaces.
Description
Technical field
The present invention relates to semiconductor fabrication process, be specifically related to measure the method for shoulder height.
Background technology
Shoulder height (Step height) is the height difference between chip base and the filled media.Along with the size of electronic equipment reduces day by day, shoulder height is important further for process control.AFM (atomic force microscope) at present commonly used measures shoulder height.AFM need scan the state of many lines with the bright dark color showing of difference.The color of analyzing STI (shallow trench isolation from) and monocrystalline silicon then is to obtain shoulder height.If shoulder height is too little, can causes color contrast not obvious, thereby cause analyzing failure.So analyzing, AFM must need the most enough height of shoulder height.In addition, AFM need use the interface shape (Topography) of probe scanning chip, and the cost of probe is very high, and AFM analyzes a chip and roughly need 30 minutes, and operating efficiency is lower.
Summary of the invention
The object of the present invention is to provide a kind of method that measures shoulder height, it can effectively be saved cost and improve and measure success rate.
For achieving the above object, the invention provides a kind of method of the OCD of employing measuring chip shoulder height, this method comprises the steps: that a. obtains the height parameter of filled media and the height parameter of chip base from spectrum line; B. the difference of height parameter of calculating the height parameter of filled media and chip base is to obtain shoulder height.
Described spectrum line is that OCD shines reverberation on chip, the one group of spectrum line that obtains according to reverberation.Filled media is STI (shallow trench isolation from).Described chip base is a monocrystalline silicon.Described OCD is the optical signature dimensional measurement.
Compared with prior art, adopt the more effective and measurement shoulder height of OCD among the present invention with cutting down expenses.Measure two different mediums at one time, and the difference of output height, and can not cause damage to chip surface.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is for needing the structural representation of measuring chip among the present invention.
Embodiment
In preferred embodiment of the present invention, the present invention adopts the shoulder height of OCD (optical signature dimensional measurement) measuring chip.OCD can shine reverberation on the chip that needs measure, obtain one group of spectrum line from reverberation, comprises the information that measures part in this spectrum line.
Fig. 1 is the structural representation that needs measuring chip.This chip comprises filled media 21 and chip base 22.In embodiments of the present invention, chip base 22 is a monocrystalline silicon, and filled media 21 is the STI (shallow trench isolation from) in the middle of the monocrystalline silicon.
At first obtain the height parameter of filled media 21 and the height parameter of chip base 22 in the spectrum line of receiving by OCD, the difference of the height parameter of height parameter by calculating filled media and chip base 22 is to obtain shoulder height d then.
OCD measures and to compare AFM and measure more effectively, and it can simulate the live width that measures object, at interval and parameter such as gully.Experiment shows that OCD only need spend 5 minutes and just can analyze 3 chips, has effectively improved operating efficiency, and need not have physics to contact with chip.Method for measurement provided by the invention also goes for the following manufacture of semiconductor of 65nm.In other embodiments of the invention, method for measurement of the present invention also goes for the measurement of the height difference of two kinds of different mediums on the chip.
Claims (5)
1. a method that adopts OCD measuring chip shoulder height is characterized in that, this method comprises the steps:
A. from spectrum line, obtain the height parameter of filled media and the height parameter of chip base;
B. the difference of height parameter of calculating the height parameter of filled media and chip base is to obtain shoulder height.
2. the method for employing as claimed in claim 1 OCD measuring chip shoulder height, it is characterized in that: described spectrum line is that OCD shines reverberation on chip, the one group of spectrum line that obtains according to reverberation.
3. the method for employing as claimed in claim 1 OCD measuring chip shoulder height is characterized in that: filled media is STI (shallow trench isolation from).
4. the method for employing OCD measuring chip shoulder height as claimed in claim 1, it is characterized in that: described chip base is a monocrystalline silicon.
5. the method for employing OCD measuring chip shoulder height as claimed in claim 1, it is characterized in that: described OCD is the optical signature dimensional measurement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101473953A CN101202236A (en) | 2006-12-15 | 2006-12-15 | Method for measuring chip step height adopting OCD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101473953A CN101202236A (en) | 2006-12-15 | 2006-12-15 | Method for measuring chip step height adopting OCD |
Publications (1)
| Publication Number | Publication Date |
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| CN101202236A true CN101202236A (en) | 2008-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2006101473953A Pending CN101202236A (en) | 2006-12-15 | 2006-12-15 | Method for measuring chip step height adopting OCD |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024726B (en) * | 2009-09-23 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | Detection method and manufacturing method of MOS device |
| CN102136438B (en) * | 2010-01-21 | 2012-08-01 | 上海华虹Nec电子有限公司 | Method for quickly detecting segment difference height between stacked frames of chip |
| CN106289095A (en) * | 2015-06-12 | 2017-01-04 | 睿励科学仪器（上海）有限公司 | Critical size measuring method based on front value and equipment |
| CN110767572A (en) * | 2018-07-27 | 2020-02-07 | 无锡华润上华科技有限公司 | Method for monitoring step height of junction region of active region and isolation structure |
| CN114267606A (en) * | 2022-03-01 | 2022-04-01 | 武汉精立电子技术有限公司 | Wafer height detection method and device |
-
2006
- 2006-12-15 CN CNA2006101473953A patent/CN101202236A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024726B (en) * | 2009-09-23 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | Detection method and manufacturing method of MOS device |
| CN102136438B (en) * | 2010-01-21 | 2012-08-01 | 上海华虹Nec电子有限公司 | Method for quickly detecting segment difference height between stacked frames of chip |
| CN106289095A (en) * | 2015-06-12 | 2017-01-04 | 睿励科学仪器（上海）有限公司 | Critical size measuring method based on front value and equipment |
| CN106289095B (en) * | 2015-06-12 | 2019-02-19 | 睿励科学仪器（上海）有限公司 | Critical size measurement method and equipment based on preceding value |
| CN110767572A (en) * | 2018-07-27 | 2020-02-07 | 无锡华润上华科技有限公司 | Method for monitoring step height of junction region of active region and isolation structure |
| CN110767572B (en) * | 2018-07-27 | 2021-11-05 | 无锡华润上华科技有限公司 | Method for monitoring step height of junction region of active region and isolation structure |
| CN114267606A (en) * | 2022-03-01 | 2022-04-01 | 武汉精立电子技术有限公司 | Wafer height detection method and device |
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Open date: 20080618 |